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    • 31. 发明授权
    • Controlled output impedance buffer using CMOS technology
    • 使用CMOS技术的受控输出阻抗缓冲器
    • US6087853A
    • 2000-07-11
    • US100939
    • 1998-06-22
    • Carol A. HuberBernard L. MorrisBijit T. Patel
    • Carol A. HuberBernard L. MorrisBijit T. Patel
    • H03K19/00H03K19/0175
    • H03K19/0005
    • CMOS technology is used to create a controlled output impedance output buffer circuit. An output buffer driver uses buffer circuits having impedance elements with linear characteristics. A control circuit uses a known impedance load to control the impedance of the buffer circuits. The control circuit monitors a known current flowing through the known impedance load to determine whether the output buffer circuit's output impedance needs to be adjusted to match a transmission line's impedance. Adjustments occur when the control circuit generates control signals to turn on or off various buffer circuits (and their impedance elements) contained within the output driver. In doing so, the output buffer circuit ensures that its output impedance will match the impedance of a transmission line over the entire range of output voltages regardless of the variations caused by the manufacturing process, operation temperature and power supply voltage.
    • CMOS技术用于创建受控输出阻抗输出缓冲电路。 输出缓冲器驱动器使用具有线性特性的阻抗元件的缓冲电路。 控制电路使用已知的阻抗负载来控制缓冲电路的阻抗。 控制电路监测流过已知阻抗负载的已知电流,以确定输出缓冲电路的输出阻抗是否需要调整以匹配传输线的阻抗。 当控制电路产生控制信号以导通或关闭包含在输出驱动器内的各种缓冲电路(及其阻抗元件)时,发生调整。 在这样做时,输出缓冲电路确保其输出阻抗将与输出电压的整个范围内的传输线的阻抗匹配,而不管制造过程,操作温度和电源电压引起的变化如何。
    • 32. 发明授权
    • Multi-voltage compatible bidirectional buffer
    • 多电压兼容双向缓冲器
    • US5381062A
    • 1995-01-10
    • US144594
    • 1993-10-28
    • Bernard L. Morris
    • Bernard L. Morris
    • H03K19/003H03K19/0175H03K19/094H03K19/0948H03K19/0185
    • H03K19/00315H03K19/09429H03K19/0948
    • An integrated circuit is disclosed comprising a first field effect transistor having a source connected to a first node and a gate connected to a second node, and a second field effect transistor for protecting the first transistor from voltages applied to the first node and greater than a predetermined nominal voltage. The second transistor includes a drain connected to the second node, a source connected to the first node, and a gate connected to a third node. A constant voltage source is coupled to the third node and supplies a gate voltage to the gate of the second transistor such that a drain-source path of the second transistor does not conduct while voltage applied to the first node is generally less than the gate voltage plus a threshold voltage of the second transistor. The constant voltage source comprises a third field effect transistor having a drain and a gate connected to the third node, and a source coupled to a first power supply voltage, such that the gate voltage is substantially equal to the first power supply voltage minus a threshold voltage of the third transistor.
    • 公开了一种集成电路,其包括具有连接到第一节点的源极和连接到第二节点的栅极的第一场效应晶体管,以及用于保护第一晶体管免受施加到第一节点的电压的第二场效应晶体管, 预定额定电压。 第二晶体管包括连接到第二节点的漏极,连接到第一节点的源极和连接到第三节点的栅极。 恒定电压源耦合到第三节点并且将栅极电压提供给第二晶体管的栅极,使得第二晶体管的漏极 - 源极路径不导通,而施加到第一节点的电压通常小于栅极电压 加上第二晶体管的阈值电压。 恒压源包括第三场效应晶体管,其具有连接到第三节点的漏极和栅极,以及耦合到第一电源电压的源极,使得栅极电压基本上等于第一电源电压减去阈值 第三晶体管的电压。
    • 34. 发明授权
    • High-voltage-tolerant output buffers in low-voltage technology
    • 高电压技术中的高耐压输出缓冲器
    • US5933027A
    • 1999-08-03
    • US879212
    • 1997-06-19
    • Bernard L. MorrisBijit T. Patel
    • Bernard L. MorrisBijit T. Patel
    • H01L27/04H01L21/822H03K19/003H03K19/0175H03K19/0185
    • H03K19/00315
    • An integrated circuit is implemented in a low-voltage technology and has an output driver. The output driver has circuitry adapted to generate an output voltage at an output node (e.g., PAD in FIG. 1) based on an input voltage (e.g., A). Within the output driver, a transistor is configured to limit the drain-to-source voltage drop across another transistor to enable the integrated circuit to tolerate, at its output node, voltages of magnitude up to two times the operating voltage of the integrated circuit. The invention enables low-voltage integrated circuits to be interfaced with other circuitry implemented in a relatively high-voltage technology, without suffering the adverse effects that can otherwise result in the low-voltage circuitry from such interfacing.
    • 集成电路采用低压技术实现,并具有输出驱动器。 输出驱动器具有适于基于输入电压(例如,A)在输出节点(例如,图1中的PAD)产生输出电压的电路。 在输出驱动器内,晶体管被配置为限制跨另一晶体管的漏极 - 源极电压降,以使得集成电路在其输出节点容忍高达集成电路的工作电压的两倍的电压。 本发明使得低电压集成电路能够与在相对高压技术中实现的其它电路接口,而不会产生不利影响,否则可能导致低压电路不受这种接口的影响。
    • 35. 发明授权
    • Differential comparator with fixed and controllable hysteresis
    • 具有固定和可控迟滞的差分比较器
    • US5894234A
    • 1999-04-13
    • US846390
    • 1997-04-30
    • Bernard L. Morris
    • Bernard L. Morris
    • H03K3/3565H03K5/24H03F3/45H03F3/16
    • H03K5/2481H03K3/3565
    • A differential comparator having a low-offset comparator and two processing paths, each of which receives one of the two primary inputs to the differential comparator and generates one of the two inputs to the low-offset comparator. The output of the low-offset comparator is the output of the differential comparator. Each processing path is capable of (1) generating an offset voltage and (2) turning on and off the generation of that offset voltage. In a preferred embodiment, each processing path has a passive resistor that generates the offset voltage and a pair of shunt transistors that selectively shorts out the passive resistor. The output of the low-offset comparator is connected (either directly or indirectly through an inverter) to the gates of the shunt transistors. The shunt transistors are therefore controlled by the output of the low-offset comparator. In each of two modes of operation, a different one of the passive resistors is "on" while the other passive resistor is "off." The result is a differential comparator that operates with hysteresis. The currents passing through the passive resistors to generate the offset voltages are mirrored from a current source that is controlled by a reference voltage. As such, the offset voltages can be controlled by adjusting the reference voltage. The differential comparator is capable therefore of operating with fixed and controllable hysteresis.
    • 具有低偏移比较器和两个处理路径的差分比较器,每个处理路径接收到差分比较器的两个主要输入中的一个,并产生两个输入中的一个到低偏移比较器。 低偏移比较器的输出是差分比较器的输出。 每个处理路径能够(1)产生偏移电压和(2)打开和关闭该偏移电压的产生。 在优选实施例中,每个处理路径具有产生偏移电压的无源电阻器和选择性地使无源电阻器短路的一对分流晶体管。 低偏移比较器的输出端(直接或间接通过反相器)连接到分流晶体管的栅极。 因此,分流晶体管由低偏移比较器的输出控制。 在两种工作模式中,不同的一种无源电阻为“开”,而另一种无源电阻为“关闭”。 结果是一个差分比较器以滞后运行。 通过无源电阻产生偏移电压的电流与由参考电压控制的电流源相反。 因此,可以通过调整参考电压来控制偏移电压。 差分比较器因此能够以固定和可控的滞后运行。
    • 36. 发明授权
    • Automatic control of buffer speed
    • 自动控制缓冲区速度
    • US5334885A
    • 1994-08-02
    • US3751
    • 1993-01-13
    • Bernard L. Morris
    • Bernard L. Morris
    • H03M1/36H03K19/003H03K17/16H03K19/092
    • H03K19/00384
    • The number of active switching elements in a buffer is automatically varied to compensate for variations in the manufacturing process, operating temperature, and power supply voltage. For this purpose, a reference voltage which is proportional to the speed of a switching transistor is applied to an analog-to-digital (A/D) converter. The A/D converter may be implemented with a simple resistor divider and comparators, all of which can be made on-chip. The resistor dividers are chosen such that at worst-case slow conditions all the comparators have high outputs. As the process/temperature/voltage changes, the reference voltage also increases. This successively turns off sections of the switching transistor, thereby slowing down the response of the buffer. Since the control leads are digital, they are not susceptible to noise as they are routed around a chip full of noisy signals. The digital control signals may be latched, and the control circuitry powered down to zero for powersensitive applications.
    • 缓冲器中的有源开关元件的数量自动变化以补偿制造工艺,工作温度和电源电压的变化。 为此,将与开关晶体管的速度成比例的参考电压施加到模数(A / D)转换器。 A / D转换器可以用简单的电阻分压器和比较器来实现,所有这些都可以在片上制造。 选择电阻分压器,使得在最差情况下,所有比较器都具有较高的输出。 随着过程/温度/电压的变化,参考电压也会增加。 这继续关闭开关晶体管的部分,从而减慢缓冲器的响应。 由于控制引线是数字的,它们不会受到噪声的影响,因为它们绕着充满噪声信号的芯片布线。 数字控制信号可能被锁存,并且控制电路对于功率敏感应用而降低到零。
    • 39. 发明授权
    • High-voltage tolerant input buffer in low-voltage technology
    • 低电压技术中的高耐压输入缓冲器
    • US5952848A
    • 1999-09-14
    • US818844
    • 1997-03-14
    • Bernard L. Morris
    • Bernard L. Morris
    • H01L27/04H01L21/822H03K19/003H03K19/0175H03K19/0185H03K19/017
    • H03K19/00315
    • The input buffer of a low-voltage technology integrated circuit (IC) has a buffer transistor adapted to receive an input signal at the gate of the input buffer. The channel nodes of the input buffer are connected to other circuitry (e.g., the low-voltage bias voltage and a current source). With such an input buffer, the low-voltage circuit can safely receive a relatively high input voltage. As such, the low-voltage circuit can be interfaced to and safely operated in conjunction with relatively high-voltage technology circuitry. In one implementation, IC circuitry of existing 5V technology can be safely used with IC circuitry of a new 2.5V technology having an input buffer of the present invention.
    • 低压技术集成电路(IC)的输入缓冲器具有适于在输入缓冲器的栅极处接收输入信号的缓冲晶体管。 输入缓冲器的通道节点连接到其它电路(例如,低压偏置电压和电流源)。 使用这样的输入缓冲器,低压电路可以安全地接收相对较高的输入电压。 因此,低电压电路可以与相对高压技术电路结合并安全地操作。 在一个实现中,现有5V技术的IC电路可以安全地用于具有本发明的输入缓冲器的新的2.5V技术的IC电路。
    • 40. 发明授权
    • CMOS input buffer with high speed and low power
    • CMOS输入缓冲器具有高速和低功耗
    • US5304867A
    • 1994-04-19
    • US806890
    • 1991-12-12
    • Bernard L. Morris
    • Bernard L. Morris
    • H01L21/8238H01L27/092H03K19/00H03K19/0185H03K17/16
    • H03K19/0013H03K19/018521
    • Prior-art high speed TTL-to-CMOS input buffers consume a large amount of power supply current through the input transistors when the input voltage is held at a mid-range level between V.sub.DD and V.sub.SS (e.g., 2.0 volts). The inventive input buffer includes a resistance in series with the p-channel pull-up transistor on the input inverter, in order to limit this current. In addition, to retain high operating speed, a p-channel shunt transistor is placed in parallel with the resistance, and controlled by the buffer output signal. This shunt transistor effectively bypasses the resistance from the circuit when the buffer output goes low, thereby providing high operating speed.
    • 当输入电压保持在VDD和VSS之间的中间电平(例如2.0伏特)时,现有技术的高速TTL至CMOS输入缓冲器通过输入晶体管消耗大量的电源电流。 本发明的输入缓冲器包括与输入反相器上的p沟道上拉晶体管串联的电阻,以限制该电流。 此外,为了保持高的工作速度,p沟道并联晶体管与电阻并联放置,并由缓冲器输出信号控制。 当缓冲器输出为低电平时,该并联晶体管有效绕过电路的电阻,从而提供高的运行速度。