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31. 发明授权

US08278679B2 LED device with embedded top electrode 有权
标题翻译：带嵌入式顶部电极的LED器件
公开(公告)号：US08278679B2
公开(公告)日：2012-10-02
申请号：US12235269
申请日：2008-09-22
申请人： Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/005 , H01L33/20 , H01L33/382 , H01L33/405
摘要： An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.
摘要翻译：提出了一种LED器件及其制造方法，包括嵌入式顶部电极。 LED装置包括LED结构和顶部电极。 LED结构包括设置在基板上的层，包括有源发光区域。 LED结构的顶层是顶部接触层。顶部电极嵌入到顶部接触层中，其中顶部电极电接触顶部接触层。

32. 发明申请

US20100059779A1 Light-Emitting Diode with Embedded Elements 有权
标题翻译：具有嵌入元件的发光二极管
公开(公告)号：US20100059779A1
公开(公告)日：2010-03-11
申请号：US12547428
申请日：2009-08-25
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/08 , H01L33/20
摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate and an LED structure overlying the substrate. Embedded elements are embedded within one or more layers of the LED structure. In an embodiment, the embedded elements include a dielectric material extending through the LED structure such that the embedded elements are surrounded by the LED structure. In another embodiment, the embedded elements only extend through an upper layer of the LED structure, or alternatively, partially through the upper layer of the LED structure. Another conductive layer may be formed over the upper layer of the LED structure and the embedded elements.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件具有衬底和覆盖衬底的LED结构。嵌入式元件嵌入LED结构的一层或多层内。在一个实施例中，嵌入元件包括延伸穿过LED结构的电介质材料，使得嵌入元件被LED结构包围。在另一个实施例中，嵌入式元件仅延伸穿过LED结构的上层，或者部分地穿过LED结构的上层。另外的导电层可以形成在LED结构的上层和嵌入元件上。

33. 发明申请

US20100038661A1 Light-Emitting Diode With Non-Metallic Reflector 有权
标题翻译：具有非金属反射器的发光二极管
公开(公告)号：US20100038661A1
公开(公告)日：2010-02-18
申请号：US12269497
申请日：2008-11-12
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/16 , H01L33/0079 , H01L33/10
摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件具有衬底，衬底上的反射结构以及反射结构上的LED结构。反射结构由非金属材料形成。在一个实施例中，反射结构由具有不同折射率的不同非金属材料的交替层形成。在另一个实施例中，反射结构由高孔隙率硅和低孔隙率硅的交替层形成。在另一个实施例中，反射结构由二氧化硅形成，其可以允许使用更少的层。反射结构可以直接形成在与LED结构相同的基板上，或者形成在单独的基板上，然后结合到LED结构。

34. 发明申请

US20090267105A1 LED Device with Embedded Top Electrode 有权
标题翻译：带嵌入式顶部电极的LED装置
公开(公告)号：US20090267105A1
公开(公告)日：2009-10-29
申请号：US12235269
申请日：2008-09-22
申请人： Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
发明人： Chen-Hua Yu , Ding-Yuan Chen , Wen-Chih Chiou
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/005 , H01L33/20 , H01L33/382 , H01L33/405
摘要： An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.
摘要翻译：提出了一种LED器件及其制造方法，包括嵌入式顶部电极。 LED装置包括LED结构和顶部电极。 LED结构包括设置在基板上的层，包括有源发光区域。 LED结构的顶层是顶部接触层。顶部电极嵌入到顶部接触层中，其中顶部电极电接触顶部接触层。

35. 发明授权

US08525200B2 Light-emitting diode with non-metallic reflector 有权
标题翻译：具有非金属反射器的发光二极管
公开(公告)号：US08525200B2
公开(公告)日：2013-09-03
申请号：US12269497
申请日：2008-11-12
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/16 , H01L33/0079 , H01L33/10
摘要： A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件具有衬底，衬底上的反射结构以及反射结构上的LED结构。反射结构由非金属材料形成。在一个实施例中，反射结构由具有不同折射率的不同非金属材料的交替层形成。在另一个实施例中，反射结构由高孔隙率硅和低孔隙率硅的交替层形成。在另一个实施例中，反射结构由二氧化硅形成，其可以允许使用更少的层。反射结构可以直接形成在与LED结构相同的基板上，或者形成在单独的基板上，然后结合到LED结构。

36. 发明授权

US08486730B2 Method of separating light-emitting diode from a growth substrate 有权
标题翻译：从生长衬底分离发光二极管的方法
公开(公告)号：US08486730B2
公开(公告)日：2013-07-16
申请号：US13567734
申请日：2012-08-06
申请人： Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Hung-Ta Lin , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L21/00 , H01L29/06 , H01L31/00
CPC分类号： H01L33/007 , C23C14/048 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L25/167 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
摘要翻译：提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。该方法包括在生长衬底上形成和图案化掩模层。在图案化掩模层之上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。第一接触层可以是LED结构的接触层。在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

37. 发明申请

US20120025222A1 Light-Emitting Diode Integration Scheme 有权
标题翻译：发光二极管集成方案
公开(公告)号：US20120025222A1
公开(公告)日：2012-02-02
申请号：US13269968
申请日：2011-10-10
申请人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
发明人： Ding-Yuan Chen , Wen-Chih Chiou , Chen-Hua Yu
IPC分类号： H01L33/62
CPC分类号： H01L25/0753 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2224/48227 , H05K1/0206 , H05K1/113 , H05K2201/10106 , H01L2924/00014 , H01L2924/00
摘要： A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.
摘要翻译：电路结构包括载体基板，其包括第一通孔和第二通孔。第一通孔和第二通孔中的每一个从载体衬底的第一表面延伸到与第一表面相对的载体衬底的第二表面。电路结构还包括结合到载体基板的第一表面上的发光二极管（LED）芯片。 LED芯片包括分别连接到第一通孔和第二通孔的第一电极和第二电极。

38. 发明申请

US20100038659A1 Omnidirectional Reflector 有权
标题翻译：全向反射器
公开(公告)号：US20100038659A1
公开(公告)日：2010-02-18
申请号：US12202167
申请日：2008-08-29
申请人： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/10 , H01L33/46 , H01L2933/0083
摘要： A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.
摘要翻译：提供了一种用于制造LED的系统和方法。优选的实施例包括在衬底上形成分布式布拉格反射器的衬底。在分布式布拉格反射器上形成光子晶体层，使入射到分布式布拉格反射器上的光准直，从而提高分布式布拉格反射器的效率。优选地，在光子晶体层上形成第一接触层，有源层和第二接触层，或者替代地附着到光子晶体层。

39. 发明申请

US20100015782A1 Wafer Dicing Methods 审中-公开
标题翻译：晶圆切片方法
公开(公告)号：US20100015782A1
公开(公告)日：2010-01-21
申请号：US12175818
申请日：2008-07-18
申请人： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen
发明人： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , H01L33/0095
摘要： Semiconductor wafer dicing methods are disclosed. These methods include forming etch patterns between adjacent semiconductor dice to be separated. Various etch processes can be used to form the etch patterns. The etch patterns generally reach a pre-determined depth into the wafer substrate significantly beyond the wafer top layer where pre-fabricated semiconductor dice are embedded. Semiconductor dice may be separated from a post-etch, large-sized, frangible wafer through wafer grinding, mechanical cleaving, and laser dicing approaches. Preferred embodiments result in reduced wafer-dicing related device damage and improved product yield.
摘要翻译：公开了半导体晶片切割方法。这些方法包括在相邻半导体晶片之间形成待分离的蚀刻图案。可以使用各种蚀刻工艺来形成蚀刻图案。蚀刻图案通常达到晶片衬底的预定深度，显着超过嵌入预制半导体晶片的晶片顶层。半导体晶片可以通过晶片研磨，机械切割和激光切割方法与后蚀刻，大尺寸的易碎晶片分离。优选的实施例导致晶片切割相关装置损坏减少和产品产量提高。

40. 发明授权

US08815618B2 Light-emitting diode on a conductive substrate 有权
标题翻译：导电基板上的发光二极管
公开(公告)号：US08815618B2
公开(公告)日：2014-08-26
申请号：US12541787
申请日：2009-08-14
申请人： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
发明人： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC分类号： H01L33/00 , H01L21/78
CPC分类号： H01L33/0062 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L2924/01078 , H01S5/1231 , H01S5/2275
摘要： A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件通过在第一衬底上形成LED结构而形成。将第一衬底的一部分转换成多孔层，并且在与第一衬底相对的表面上的LED结构上形成导电衬底。第一衬底沿着多孔层与LED结构分离，并且从LED结构中去除任何剩余的材料。

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