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    • 32. 发明授权
    • Light emitting devices for light conversion and semiconductor chips for fabricating the same
    • 用于光转换的发光器件和用于制造它的半导体芯片
    • US08941125B2
    • 2015-01-27
    • US12173393
    • 2008-07-15
    • Peter S. Andrews
    • Peter S. Andrews
    • H01L27/15H01L31/12H01L33/00H01L33/50H01L33/20
    • H01L33/508H01L33/20
    • Broad spectrum light emitting devices and methods and semiconductor chips for fabricating such devices include a light emitting element, such as a diode or laser, which emits light in a predefined range of frequencies. The light emitting element includes a shaped substrate suitable for light extraction through the substrate and a cavity in the substrate proximate the light emitting element. For example, a trench adjacent the light emitting element may be provided. The cavity/trench is configured to contain light conversion material such that light extracted from sidewalls of the cavity/trench passes through the light conversion material contained in the cavity/trench. Methods of fabricating such devices and/or chips are also provided.
    • 用于制造这种器件的广谱发光器件和方法以及半导体芯片包括发射预定频率范围内的光的诸如二极管或激光器的发光元件。 发光元件包括适合于通过基板的光提取的成形基板和靠近发光元件的基板中的空腔。 例如,可以提供与发光元件相邻的沟槽。 空腔/沟槽被配置为容纳光转换材料,使得从空腔/沟槽的侧壁提取的光通过包含在空腔/沟槽中的光转换材料。 还提供了制造这种装置和/或芯片的方法。
    • 38. 发明授权
    • Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same
    • 用于光转换的发光器件及其制造方法和半导体芯片
    • US07405094B2
    • 2008-07-29
    • US11011545
    • 2004-12-14
    • Peter S. Andrews
    • Peter S. Andrews
    • H01L21/00
    • H01L33/508H01L33/20
    • Broad spectrum light emitting devices and methods and semiconductor chips for fabricating such devices include a light emitting element, such as a diode or laser, which emits light in a predefined range of frequencies. The light emitting element includes a shaped substrate suitable for light extraction through the substrate and a cavity in the substrate proximate the light emitting element. For example, a trench adjacent at least a portion of the periphery of the light emitting element may be provided. The cavity/trench is configured to contain light conversion material such that light extracted from sidewalls of the cavity/trench passes through the light conversion material contained in the cavity/trench. Methods of fabricating such devices and/or chips are also provided.
    • 用于制造这种器件的广谱发光器件和方法以及半导体芯片包括发射预定频率范围内的光的诸如二极管或激光器的发光元件。 发光元件包括适合于通过基板的光提取的成形基板和靠近发光元件的基板中的空腔。 例如,可以提供与发光元件的周边的至少一部分相邻的沟槽。 空腔/沟槽被配置为容纳光转换材料,使得从空腔/沟槽的侧壁提取的光通过包含在空腔/沟槽中的光转换材料。 还提供了制造这种装置和/或芯片的方法。