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31. 发明申请

US20060221613A1 Virtual point light source 审中-公开
标题翻译：虚拟点光源
公开(公告)号：US20060221613A1
公开(公告)日：2006-10-05
申请号：US11099076
申请日：2005-04-05
申请人： Charles Coushaine , Michael Tucker , Thomas Tessnow , Ralph Johnson , Steven Sidwell
发明人： Charles Coushaine , Michael Tucker , Thomas Tessnow , Ralph Johnson , Steven Sidwell
IPC分类号： F21V21/00
CPC分类号： G02B19/0028 , F21K9/00 , F21S41/141 , F21S41/143 , F21S41/147 , F21S41/19 , F21S41/24 , F21V5/04 , F21V7/0091 , F21V13/02 , F21Y2107/50 , F21Y2115/10 , G02B19/0066 , H01L33/58 , H01L33/60
摘要： A virtual point light source (10) has a support (12) having an axis (14), a plurality of individual light emitting diodes (16) positioned on the support (12); and an individual optic (18) associated with each of the light emitting diodes (16), each of the individual optics (18) focusing the light from its associated light emitting diode (16) to a virtual point (20) on the axis (14) at a distance (D) from said support.
摘要翻译：虚拟点光源（10）具有支撑件（12），其具有轴线（14），多个独立的发光二极管（16）位于支撑件（12）上; 以及与每个发光二极管（16）相关联的单个光学器件（18），每个单独光学器件（18）将来自其相关联的发光二极管（16）的光聚焦到轴上的虚拟点（20） 14）与所述支撑件距离（D）。

32. 发明申请

US20060072640A1 Vertical cavity surface emitting laser having multiple top-side contacts 有权
标题翻译：具有多个顶侧触点的垂直腔面发射激光器
公开(公告)号：US20060072640A1
公开(公告)日：2006-04-06
申请号：US11224615
申请日：2005-09-12
申请人： Ralph Johnson , R. Penner , James Biard , Colby Fitzgerald
发明人： Ralph Johnson , R. Penner , James Biard , Colby Fitzgerald
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305
摘要： A VCSEL with undoped mirrors. An essentially undoped bottom DBR mirror is formed on a substrate. A periodically doped first conduction layer region is formed on the bottom DBR mirror. The first conduction layer region is heavily doped at a location where the optical electric field is at about a minimum. An active layer, including quantum wells, is on the first conduction layer region. A periodically doped second conduction layer region is connected to the active layer. The second conduction layer region is heavily doped where the optical electric field is at a minimum. An aperture is formed in the epitaxial structure above the quantum wells. A top mirror coupled to the periodically doped second conduction layer region. The top mirror is essentially undoped and formed in a mesa structure. An oxide is formed around the mesa structure to protect the top mirror during wet oxidation processes.
摘要翻译：具有未掺杂镜像的VCSEL。在基板上形成基本上未掺杂的底部DBR反射镜。在底部DBR反射镜上形成周期性掺杂的第一导电层区域。第一导电层区域在光电场处于最小值的位置处被重掺杂。包括量子阱的有源层在第一导电层区域上。周期性掺杂的第二导电层区域连接到有源层。第二导电层区域是重掺杂的，其中光电场处于最小。在量子阱上方的外延结构中形成孔径。耦合到周期性掺杂的第二导电层区域的上反射镜。顶部镜子基本上是未掺杂的并且形成在台面结构中。在台面结构周围形成氧化物，以在湿式氧化过程中保护顶镜。

33. 发明申请

US20060072639A1 Vertical cavity surface emitting laser with undoped top mirror 有权
标题翻译：垂直腔表面发射激光器与无顶顶镜
公开(公告)号：US20060072639A1
公开(公告)日：2006-04-06
申请号：US11222433
申请日：2005-09-08
申请人： Ralph Johnson , R. Penner , James Biard
发明人： Ralph Johnson , R. Penner , James Biard
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/18313 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2086 , H01S5/3095 , H01S5/3211
摘要： A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
摘要翻译：具有未掺杂顶镜的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。在衬底上形成掺杂的底镜。在底部反射镜上形成包括量子阱的有源层。在有源层上形成周期性掺杂的导电层。周期性掺杂的导电层在VCSEL工作时光能量最小的位置被重掺杂。在导电层和有源区之间使用电流孔。在重掺杂导电层上形成未掺杂的顶部反射镜。

34. 发明申请

US20060061988A1 LED lamp bulb assembly and reflector system 有权
标题翻译： LED灯泡组件和反射器系统
公开(公告)号：US20060061988A1
公开(公告)日：2006-03-23
申请号：US10948055
申请日：2004-09-23
申请人： Ralph Johnson , Paul Lyman
发明人： Ralph Johnson , Paul Lyman
IPC分类号： B60Q1/26
CPC分类号： F21K9/68 , F21S41/147 , F21Y2115/10 , Y10S362/80
摘要： A reflector lamp assembly may be formed with a reflector housing having a reflector with a prescribed reflective surface; the reflector formed with a wall defining a through passage. A lamp bulb assembly having an axially extending stem supports a head extending transverse to the axis, the head having a first generally linearly extending region, a first set of LEDs mounted generally in a row along the region oriented to face in one plane towards a reflector. Electrical connections for the LEDs extend through the head, and stem to the exterior of the assembly for electrical connection. A base extends in the through passage and is mechanically mounted to the optical housing with the LED assembly oriented to face the reflective surface.
摘要翻译：反射器灯组件可以形成有具有反射器的反射器壳体，该反射器具有规定的反射表面; 反射器形成有限定穿过通道的壁。具有轴向延伸的杆的灯泡组件支撑横向于轴线延伸的头部，头部具有第一大致线性延伸的区域，第一组LED沿着朝向朝向反射器的一个平面中面向的区域大体上一排地安装。 LED的电气连接通过头部延伸，并且杆件连接到组件的外部用于电连接。基座在通道中延伸并且机械地安装到光学壳体，LED组件被定向成面向反射表面。

35. 发明申请

US20060054902A1 Band offset in AlInGaP based light emitters to improve temperature performance 有权
标题翻译：基于AlInGaP的光发射器的带偏移以提高温度性能
公开(公告)号：US20060054902A1
公开(公告)日：2006-03-16
申请号：US10940697
申请日：2004-09-14
申请人： Ralph Johnson
发明人： Ralph Johnson
IPC分类号： H01L33/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01S5/2004 , H01S5/34326 , H01S5/3436
摘要： Systems and methods for improving the temperature performance of AlInGaP based light emitters. Nitrogen is added to the quantum wells in small quantities. Nitrogen is added in a range of about 0.5 percent to 2 percent. The addition of nitrogen increases the conduction band offset and increases the separation of the indirect conduction band. To keep the emission wavelength in a particular range, the concentration of In in the quantum wells may be decreased or the concentration of Al in the quantum wells may be increased. Because the depth of the quantum wells in the valence band is more than is required although the addition of nitrogen reduces the depth of the quantum wells in the valence band. The net result is an increase in the conduction band offset and an increase in the separation of the indirect conduction band.
摘要翻译：用于改善AlInGaP基发光体的温度性能的系统和方法。将少量氮气加入到量子阱中。氮在约0.5％至2％的范围内加入。氮的添加会增加导带偏移并增加间接导带的分离。为了将发射波长保持在特定范围内，量子阱中的In的浓度可能会降低，或者可能增加量子阱中的Al的浓度。因为量子阱在价带中的深度要大于所需的量子阱的深度，尽管加入氮降低了价带中量子阱的深度。最终的结果是导带偏移的增加和间接导带的分离增加。

36. 发明申请

US20050129078A1 Multicomponent barrier layers in quantum well active regions to enhance confinement and speed 有权
标题翻译：量子阱活性区域中的多组分势垒层，以增强约束和速度
公开(公告)号：US20050129078A1
公开(公告)日：2005-06-16
申请号：US10956798
申请日：2004-10-01
申请人： Ralph Johnson
发明人： Ralph Johnson
IPC分类号： H01L21/203 , H01L33/00 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/18308 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00
摘要： Multi-component barrier layers include formation of a GaAs layer and at least one adjacent GaAsN layer. The resulting multi-component barrier layer shape can provide enhanced (extended) offset for capture of holes and enhanced electrons. Other benefits include: a small amount of strain compensation; poorer spatial overlap of higher confined states reducing parasitics at high bias, with some small effect on the lowest confined states. Quantum wells and associated barriers layers can be grown with combinations of gallium, (Ga), arsenic, (As), nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., with wavelengths over 1200 nm. Layers of strained quantum well material can also be supported by mechanical stabilizers.
摘要翻译：多组分阻挡层包括形成GaAs层和至少一个相邻的GaAsN层。所得的多组分阻挡层形状可以提供用于捕获空穴和增强电子的增强（扩展）偏移。其他好处包括：少量应变补偿; 较高限制状态较差的空间重叠减少了高偏倚的寄生效应，对最低限制状态影响较小。量子阱和相关势垒层可以通过放置在其中的镓（Ga），砷（As），氮（N），铝（Al），锑（Sb），磷（P）和/或铟（In）或关于典型的GaAs衬底，以实现长波长VCSEL性能，例如，波长超过1200nm。应变量子阱材料层也可以由机械稳定器支撑。

37. 发明申请

US20050123015A1 Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers 有权
标题翻译：在包含氮和AlGaAs限制层的有源区之间使用GaAs延伸势垒层
公开(公告)号：US20050123015A1
公开(公告)日：2005-06-09
申请号：US10956985
申请日：2004-10-01
申请人： Ralph Johnson
发明人： Ralph Johnson
IPC分类号： H01L21/203 , H01L33/00 , H01S5/183 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01L33/007 , H01S5/18308 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00
摘要： Incorporation of a GaAs “Extended lower barrier” in between quantum wells using nitrogen and confining layers using aluminum. Not to be confused with barrier layers used in quantum wells, the extended lower barrier is formed between the active region and the outer/confining layers where N and Al are respectively used. N and Al can be separated in the case where, for example, AlGaAs is being used in the confining layers and any nitrogen containing material is being used in the active region. Aluminum and Nitrogen when allowed to combine can cause deep traps and resultant non-radiative recombination, therefore N and Al pairing should be prevented. The GaAs extended barrier layer can provide a protective measure against such combination.
摘要翻译：使用铝在氮和限制层之间在量子阱之间并入GaAs“扩展的下阻挡层”。不要与在量子阱中使用的阻挡层混淆，在有源区和分配使用N和Al的外/限制层之间形成扩展的下势垒。在例如在限制层中使用AlGaAs并且在活性区域中使用任何含氮材料的情况下，可以分离N和Al。当合并铝和氮时，可能导致深陷阱和非辐射复合，因此应防止N和Al配对。 GaAs延伸的阻挡层可以提供抵抗这种组合的保护措施。

38. 发明授权

US08281163B2 System and method for providing power control fault masking 有权
标题翻译：提供电源控制故障屏蔽的系统和方法
公开(公告)号：US08281163B2
公开(公告)日：2012-10-02
申请号：US12724709
申请日：2010-03-16
申请人： Timothy M. Lambert , Ralph Johnson
发明人： Timothy M. Lambert , Ralph Johnson
IPC分类号： G06F1/00 , G06F1/26 , B23K11/24
CPC分类号： G06F1/3203 , G06F11/004
摘要： Systems and methods for reducing problems and disadvantages associated with traditional approaches to masking false faults generated by voltage regulators are provided. A method may include receiving, at a voltage regulator configured to be enabled by a power controller communicatively coupled to the voltage regulator via an enable line, a first indication from a device other than the power controller indicating that the voltage regulator is to be disabled, wherein the enable line is configured to communicate a second indication from the power controller to the voltage regulator indicating whether the voltage regulator is to be enabled. In response to receipt of the first signal, the voltage regulator may communicate to the power controller via the enable line, a third indication indicating that the voltage regulator has been disabled by a device other than the power controller.
摘要翻译：提供了用于减少与由电压调节器产生的伪故障的传统方法相关联的问题和缺点的系统和方法。一种方法可包括在电压调节器处经由经由使能线通信地耦合到电压调节器的功率控制器被配置为使得能够从功率控制器之外的设备指示电压调节器被禁用的第一指示，其中所述使能线被配置为将来自所述功率控制器的第二指示传送到所述电压调节器，以指示是否启用所述电压调节器。响应于接收到第一信号，电压调节器可以经由使能线路与功率控制器通信，指示电压调节器已被功率控制器以外的设备禁用的第三指示。

39. 发明授权

US08020167B2 System and method for automatic throttling of resources in an information handling system chassis 有权
标题翻译：在信息处理系统机箱中自动调节资源的系统和方法
公开(公告)号：US08020167B2
公开(公告)日：2011-09-13
申请号：US12115271
申请日：2008-05-05
申请人： Shawn Joel Dube , Timothy Lambert , Ralph Johnson , Bruce Wagner
发明人： Shawn Joel Dube , Timothy Lambert , Ralph Johnson , Bruce Wagner
IPC分类号： G06F1/32
CPC分类号： G06F1/206 , Y02D10/16
摘要： Systems and methods for automatic throttling of resources in an information handling system are disclosed. A method may include determining whether a first throttling condition exists, the first throttling condition existing when a chassis management controller fails to communicate a clock or synchronization signal to one or more devices in an information handling system chassis for a particular duration of time. The method may also include determining whether a second throttling condition exists, the second throttling condition existing when the chassis management controller fails to communicate data to one or more devices in the information system handling chassis. The method may further include throttling a resource in the information handling system chassis if at least one of the first throttling condition and the second throttling condition exists.
摘要翻译：公开了一种在信息处理系统中自动调节资源的系统和方法。一种方法可以包括确定第一节流条件是否存在，当机箱管理控制器在特定持续时间内无法向信息处理系统机箱中的一个或多个设备通信时钟或同步信号时，存在第一节流条件。该方法还可以包括确定是否存在第二节流条件，当机箱管理控制器无法将数据传送到信息系统处理机箱中的一个或多个设备时，存在第二节流条件。如果存在第一节流条件和第二节流条件中的至少一个，则该方法还可以包括限制信息处理系统机箱中的资源。

40. 发明授权

US07795632B2 Light emitting diode with direct view optic 有权
标题翻译：具有直视光源的发光二极管
公开(公告)号：US07795632B2
公开(公告)日：2010-09-14
申请号：US11474553
申请日：2006-06-26
申请人： Charles M. Coushaine , Ralph Johnson , Thomas Tessnow
发明人： Charles M. Coushaine , Ralph Johnson , Thomas Tessnow
IPC分类号： H01L23/31
CPC分类号： H01L33/54 , G02B6/4204 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00
摘要： An LED and light guide assembly has an LED with an output surface; a first power input lead electrically coupled to a first pole and having a first surface and a second surface; and a second power input lead electrically coupled to a second pole and having a first surface and a second surface. A unitary, molded light guide has an axially extending, light transmissive body with a light output window. An input window is formed with the unitary, molded light guide being aligned in a zero-gap relationship to capture substantially all the light emitted by the LED. A support is formed integral with the light guide and envelopes a portion of the first surface and the second surface of the first power input lead and the first surface and the second surface of the second power input lead to anchor the guide with respect to the power inputs.
摘要翻译： LED和导光组件具有带有输出表面的LED; 电耦合到第一极并具有第一表面和第二表面的第一电力输入引线; 以及电耦合到第二极并具有第一表面和第二表面的第二电力输入引线。单一的模制光导件具有带有光输出窗口的轴向延伸的透光体。形成一个输入窗口，该单一模制光导件以零间隙关系对准，以基本上捕获由LED发射的所有光。支撑件与光导成一体，并且包围第一电源输入引线的第一表面和第二表面的一部分以及第二电源输入引线的第一表面和第二表面，以相对于电源锚定引导件输入。

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