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31. 发明授权

US08168451B2 Optical inspection methods 有权
标题翻译：光学检测方法
公开(公告)号：US08168451B2
公开(公告)日：2012-05-01
申请号：US12649391
申请日：2009-12-30
申请人： Colin J. Brodsky , Mary Jane Brodsky , Sean Burns , Habib Hichri
发明人： Colin J. Brodsky , Mary Jane Brodsky , Sean Burns , Habib Hichri
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： G01N21/956 , H01L22/20
摘要： Inspection methods. A method includes adhering an optical blocking layer directly onto and in direct mechanical contact with a semiconductor process wafer, the blocking layer being substantially opaque to a range of wavelengths of light; applying at least one layer over the blocking layer; and inspecting optically at least one wavelength at least one inspection area, the blocking layer extending substantially throughout the inspection area. An inspection method including adhering an optical absorbing layer to a semiconductor process wafer, where the absorbing layer is configured to substantially absorb a range of wavelengths of light; applying at least one layer over the absorbing layer; and inspecting optically at least one wavelength at least one inspection area of the process wafer. A manufacturing method including ascertaining if a defect is present within a photoresist layer, and changing a semiconductor manufacturing process to prevent the defect, if the defect is present.
摘要翻译：检验方法一种方法包括将光学阻挡层直接粘附到半导体工艺晶片上并与半导体工艺晶片直接机械接触，所述阻挡层对于一定波长的光的范围基本上是不透明的; 在阻挡层上施加至少一层; 并且在光学上至少检测至少一个波长的至少一个检查区域，所述阻挡层基本上延伸遍及所述检查区域。一种检查方法，包括将光吸收层粘附到半导体处理晶片，其中吸收层被配置为基本上吸收一定范围的光的波长; 在吸收层上施加至少一层; 并且在光学上检查至少一个波长的处理晶片的至少一个检查区域。如果存在缺陷，则包括确定光致抗蚀剂层内是否存在缺陷以及改变半导体制造工艺以防止缺陷的制造方法。

32. 发明申请

US20110205509A1 TEST METHOD FOR DETERMINING RETICLE TRANSMISSION STABILITY 失效
标题翻译：用于确定传输稳定性的测试方法
公开(公告)号：US20110205509A1
公开(公告)日：2011-08-25
申请号：US13098723
申请日：2011-05-02
申请人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
发明人： Timothy A. Brunner , Colin J. Brodsky , Michael B. Pike
IPC分类号： G03B27/68
CPC分类号： G03B27/52 , G01N21/956 , G01N2021/95676 , G03F1/84
摘要： Methods, systems and apparatus for monitoring the state of a reticle by providing a reticle having a device exposure region in an imaging tool, defining one or more image fields across the device exposure region, and transmitting energy through the device exposure region. A detector detects the energy in the image field(s) at one or more testing intervals and a system control generates a transmission profile of average energy transmissions for each image field. Using this transmission profile, the state of the reticle is then determined at each testing interval followed by taking action based on the reticle state. The state of the reticle identifies whether the device exposure region has been deleteriously degraded, and as such, the reticle is no longer suitable for use. This is accomplished by determining if any average energy transmission of any image field across the reticle exceeds an allowable energy transmission threshold.
摘要翻译：通过在成像工具中提供具有装置曝光区域的掩模版来限定掩模版的状态的方法，系统和装置，其限定穿过装置曝光区域的一个或多个图像场，以及通过装置曝光区域传输能量。检测器以一个或多个测试间隔检测图像场中的能量，并且系统控制为每个图像场生成平均能量传输的传输轮廓。使用该传输配置文件，然后在每个测试间隔确定掩模版的状态，随后基于掩模版状态采取动作。掩模版的状态识别设备曝光区域是否被有害降解，因此，掩模版不再适合使用。这是通过确定跨越掩模版的任何图像场的任何平均能量传输是否超过允许的能量传输阈值来实现的。

33. 发明授权

US07824846B2 Tapered edge bead removal process for immersion lithography 失效
标题翻译：用于浸没式光刻的锥形边缘珠去除工艺
公开(公告)号：US07824846B2
公开(公告)日：2010-11-02
申请号：US11857764
申请日：2007-09-19
申请人： Colin J. Brodsky
发明人： Colin J. Brodsky
IPC分类号： G03F7/26
CPC分类号： G03F7/2028 , G03F7/70341
摘要： A method and apparatus for forming a tapered photoresist edge. The method includes: forming a photoresist layer on a substrate; exposing a first annular region of the photoresist layer adjacent to a perimeter of the substrate to actinic radiation, the first annular region having a first outer perimeter proximate to a perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate, the actinic radiation gradually decreasing in intensity from the first outer perimeter to the first inner perimeter; and developing the exposed first annular region of the photoresist layer to form a tapered profile in a second annular region of the photoresist layer, the second annular region having a second perimeter proximate to the perimeter of the substrate and a second inner perimeter away from the substrate perimeter, the profile gradually increasing in thickness from the second outer perimeter to the second inner perimeter.
摘要翻译：一种用于形成锥形光致抗蚀剂边缘的方法和装置。该方法包括：在基板上形成光致抗蚀剂层; 将光致抗蚀剂层的与衬底的周边相邻的第一环形区域暴露于光化辐射，第一环形区域具有靠近衬底的周边的第一外周边和远离衬底的周边的第一内周边，光化辐射从第一外围到第一内周的强度逐渐降低; 以及显影所述光致抗蚀剂层的暴露的第一环形区域以在所述光致抗蚀剂层的第二环形区域中形成锥形轮廓，所述第二环形区域具有邻近所述基底的周边的第二周边和离开所述基底的第二内周边轮廓，轮廓的厚度从第二外周边逐渐增加到第二内周。

34. 发明授权

US07494919B2 Method for post lithographic critical dimension shrinking using thermal reflow process 失效
标题翻译：使用热回流工艺的后平版印刷临界尺寸收缩的方法
公开(公告)号：US07494919B2
公开(公告)日：2009-02-24
申请号：US10905579
申请日：2005-01-12
申请人： Colin J. Brodsky , Scott D. Allen
发明人： Colin J. Brodsky , Scott D. Allen
IPC分类号： H01L21/4763
CPC分类号： H01L21/0273 , G03F7/091 , G03F7/40 , H01L21/0276
摘要： A method for reducing the size of a patterned semiconductor feature includes forming a first layer over a substrate to be patterned, and forming a photoresist layer over the first layer. The photoresist layer is patterned so as to expose portions of the first layer, and the exposed portions of the first layer are removed in a manner so as to create an undercut region beneath the patterned photoresist layer. The patterned photoresist layer is reflowed so as to cause reflowed portions of the patterned photoresist layer to occupy at least a portion of the undercut region.
摘要翻译：用于减小图案化半导体特征的尺寸的方法包括在待图案化的衬底上形成第一层，以及在第一层上形成光致抗蚀剂层。图案化光致抗蚀剂层以暴露第一层的部分，并且以使得在图案化的光致抗蚀剂层下面形成底切区域的方式去除第一层的暴露部分。图案化的光致抗蚀剂层被回流以使图案化的光致抗蚀剂层的回流部分占据底切区域的至少一部分。

35. 发明授权

US07473461B2 Film stack having under layer for preventing pinhole defects 失效
标题翻译：薄膜叠层具有防止针孔缺陷的底层
公开(公告)号：US07473461B2
公开(公告)日：2009-01-06
申请号：US11827014
申请日：2007-07-10
申请人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
发明人： Colin J. Brodsky , Wai-Kin Li , Steven A. Scheer
IPC分类号： B32B9/00 , B32B33/00
CPC分类号： B32B27/00 , Y10T428/24942 , Y10T428/2495 , Y10T428/265 , Y10T428/31504 , Y10T428/3154 , Y10T428/31544 , Y10T428/31855
摘要： A film stack is provided in which a first film including a first polymer directly contacts a surface of a substrate at which a given material is exposed. A second film, which can include a second polymer other than the first polymer, is formed to have an inner surface contacting the first film. The second film can have a thickness at which a free energy of the second film would be negative if the second film were disposed directly on the substrate. Desirably, the resulting second film is substantially free of dewetting defects.
摘要翻译：提供了一种膜叠层，其中包括第一聚合物的第一膜直接接触暴露给定材料的基板的表面。可以包括第一聚合物以外的第二聚合物的第二膜被形成为具有与第一膜接触的内表面。如果第二膜直接设置在基板上，则第二膜可以具有第二膜的自由能为负的厚度。理想地，所得到的第二膜基本上没有脱湿缺陷。

36. 发明申请

US20070178404A1 METHODS OF PREVENTING DEFECTS IN ANTIREFLECTIVE COATINGS 审中-公开
标题翻译：防止抗反射涂层缺陷的方法
公开(公告)号：US20070178404A1
公开(公告)日：2007-08-02
申请号：US11307268
申请日：2006-01-30
申请人： Colin J. Brodsky , Mary Jane Brodsky , Wai-Kin Li , Steven A. Scheer
发明人： Colin J. Brodsky , Mary Jane Brodsky , Wai-Kin Li , Steven A. Scheer
IPC分类号： G03C1/00
CPC分类号： G03F7/091
摘要： A method of forming a relief image on a substrate including: applying over a substrate a layer of an antireflective coating; and vacuum processing the antireflective coating. This method reduces the number of pinhole defects present in the antireflective coating.
摘要翻译：一种在衬底上形成凸版图像的方法，包括：在衬底上涂覆抗反射涂层; 并对抗反射涂层进行真空处理。该方法减少了抗反射涂层中存在的针孔缺陷的数量。

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