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31. 发明授权

US06303438B1 Method for manufacturing a nonvolatile semiconductor memory device having increased hot electron injection efficiency 失效
标题翻译：制造具有增加的热电子注入效率的非易失性半导体存储器件的方法
公开(公告)号：US06303438B1
公开(公告)日：2001-10-16
申请号：US09017216
申请日：1998-02-02
申请人： Atsushi Hori , Junichi Kato , Shinji Odanaka , Seiki Ogura
发明人： Atsushi Hori , Junichi Kato , Shinji Odanaka , Seiki Ogura
IPC分类号： H01L21336
CPC分类号： H01L29/66825 , H01L21/28273 , H01L29/42336 , H01L29/7885
摘要： The nonvolatile semiconductor memory device of the present invention includes: a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together; a channel region formed in the first surface region of the semiconductor substrate; a source region and a drain region which are formed in the surface of the semiconductor substrate so as to interpose the channel region therebetween; a first insulating film formed on the surface of the semiconductor substrate; a floating gate formed on the first insulating film; and a control gate which is capacitively coupled to the floating gate via a second insulating film. The first insulating film includes a first gate insulating film portion formed in the first surface region, and, a second gate insulating film portion formed in the step side region and the second surface region. The control gate is formed on the first gate insulating film portion. A part of the floating gate faces the step side region via the second gate insulating film portion, and another part of the floating gate is adjacent to the control gate via the second insulating film.
摘要翻译：本发明的非易失性半导体存储器件包括：半导体衬底，具有包括第一层的第一表面区域，低于第一层次的第二层的第二表面区域和将第一表面区域和第二表面区域在一起; 形成在所述半导体衬底的所述第一表面区域中的沟道区; 源极区域和漏极区域，其形成在半导体衬底的表面中，以便在其间插入沟道区域; 形成在所述半导体衬底的表面上的第一绝缘膜; 形成在第一绝缘膜上的浮栅; 以及通过第二绝缘膜电容耦合到浮置栅极的控制栅极。第一绝缘膜包括形成在第一表面区域中的第一栅极绝缘膜部分和形成在台阶侧区域和第二表面区域中的第二栅极绝缘膜部分。控制栅极形成在第一栅极绝缘膜部分上。浮栅的一部分经由第二栅极绝缘膜部分面对台阶侧区域，浮栅的另一部分经由第二绝缘膜与控制栅极相邻。

32. 发明授权

US6121655A Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit 失效
标题翻译：非易失性半导体存储器件及其制造方法和半导体集成电路
公开(公告)号：US6121655A
公开(公告)日：2000-09-19
申请号：US848
申请日：1997-12-30
申请人： Shinji Odanaka , Kaori Akamatsu , Junichi Kato , Atsushi Hori , Seiki Ogura
发明人： Shinji Odanaka , Kaori Akamatsu , Junichi Kato , Atsushi Hori , Seiki Ogura
IPC分类号： G11C16/04 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L29/76
CPC分类号： H01L29/66825 , H01L29/42324 , H01L29/7885
摘要： The nonvolatile semiconductor memory device of the present invention includes: a semiconductor substrate having a surface including a first surface region at a first level, a second surface region at a second level lower than the first level, and a step side region linking the first surface region and the second surface region together; a channel region formed in the first surface region of the semiconductor substrate; a source region and a drain region which are formed in the surface of the semiconductor substrate so as to interpose the channel region therebetween; a first insulating film formed on the surface of the semiconductor substrate; a floating gate formed on the first insulating film; a second insulating film formed on the floating gate; and a control gate which is capacitively coupled to the floating gate via the second insulating film. The drain region includes a low-concentration impurity layer which is formed in the second surface region and which has one end extending toward the step side region, and a high-concentration impurity layer which is connected to the low-concentration impurity layer and which is formed in a region distant from the channel region. As impurity concentration of the low-concentration impurity layer is lower than an impurity concentration of the high-concentration impurity layer. The floating gate covers the step side region and at least a part of the low-concentration impurity layer via the first insulating film.
摘要翻译：本发明的非易失性半导体存储器件包括：半导体衬底，具有包括第一层的第一表面区域，低于第一层次的第二层的第二表面区域和将第一表面区域和第二表面区域在一起; 形成在所述半导体衬底的所述第一表面区域中的沟道区; 源极区域和漏极区域，其形成在半导体衬底的表面中，以便在其间插入沟道区域; 形成在所述半导体衬底的表面上的第一绝缘膜; 形成在第一绝缘膜上的浮栅; 形成在浮动栅极上的第二绝缘膜; 以及通过第二绝缘膜电容耦合到浮动栅极的控制栅极。漏区包括形成在第二表面区域中并且具有朝向台阶侧区域延伸的一端的低浓度杂质层和连接到低浓度杂质层的高浓度杂质层，形成在远离通道区域的区域中。由于低浓度杂质层的杂质浓度低于高浓度杂质层的杂质浓度。浮置栅极经由第一绝缘膜覆盖台阶侧区域和至少一部分低浓度杂质层。

33. 发明授权

US5929727A Dielectric resonator, method for manufacturing the same, filter and communication apparatus 失效
标题翻译：介质谐振器及其制造方法，滤波器及通信装置
公开(公告)号：US5929727A
公开(公告)日：1999-07-27
申请号：US947739
申请日：1997-10-10
申请人： Hiroshi Kagata , Tatsuya Inoue , Junichi Kato , Hiroshi Sogo
发明人： Hiroshi Kagata , Tatsuya Inoue , Junichi Kato , Hiroshi Sogo
IPC分类号： H01P7/04
CPC分类号： H01P7/04
摘要： A coaxial dielectric resonator which is prismatic and has a through hole in a vertical direction, has such feature that each base side of said prism being no more than 1.6 mm, a diameter of said through hole being no more than 0.8 mm, said coaxial dielectric resonator having an electrode portion on a surface thereof and on an inner surface of said through hole.
摘要翻译：所述同轴电介质谐振器是棱柱形的并且在垂直方向上具有通孔，其特征在于，所述棱镜的每个基极侧不大于1.6mm，所述通孔的直径不大于0.8mm，所述同轴电介质谐振器，其表面上具有电极部分，并且在所述通孔的内表面上。

34. 发明授权

US5543899A Charging member having a foamed layer of a material with specified density and pore properties, charging device, process cartridge and image forming apparatus featuring the charging member 失效
标题翻译：具有具有特定密度和孔性质的材料的发泡层的充电构件，充电装置，处理盒和成像装置，其特征在于充电构件
公开(公告)号：US5543899A
公开(公告)日：1996-08-06
申请号：US233950
申请日：1994-04-28
申请人： Satoru Inami , Masaharu Ohkubo , Junichi Kato
发明人： Satoru Inami , Masaharu Ohkubo , Junichi Kato
IPC分类号： F16C13/00 , G03G15/02 , G03G21/18
CPC分类号： G03G15/0233
摘要： A charging member for charging a member to be charged includes a foamed layer; a supporting member for supporting the foamed layer, and for being supplied with a voltage; a resistance layer closer to the member to be charged than the foamed layer; wherein the foamed layer has a specific gravity not less than 0.1 (g/cm.sup.3) and not more than 0.6 (g/cm.sup.3), and wherein an average outer diameter of pores in a cross-section of said foamed layer is not less than 50 microns and not more than 1 mm.
摘要翻译：用于对要充电的构件充电的充电构件包括发泡层; 用于支撑发泡层并被供应电压的支撑构件; 比发泡层更靠近被充电部件的电阻层; 其中所述发泡层的比重不小于0.1（g / cm 3）且不大于0.6（g / cm 3），并且其中所述发泡层的横截面中的孔的平均外径不小于50 微米且不大于1mm。

35. 发明授权

US5412480A Image forming apparatus with fixer temperature control 失效
标题翻译：具有定影温度控制的图像形成装置
公开(公告)号：US5412480A
公开(公告)日：1995-05-02
申请号：US191548
申请日：1994-02-04
申请人： Yoji Serizawa , Akio Noguchi , Yukihide Ushio , Shimpei Matsuo , Kazuro Yamada , Seiji Uchiyama , Makoto Takeuchi , Koichi Suwa , Koichi Hiroshima , Shinichi Tsukida , Manabu Takano , Masahiro Goto , Takahiro Inoue , Hiromichi Yamada , Junichi Kato , Masaki Ojima
发明人： Yoji Serizawa , Akio Noguchi , Yukihide Ushio , Shimpei Matsuo , Kazuro Yamada , Seiji Uchiyama , Makoto Takeuchi , Koichi Suwa , Koichi Hiroshima , Shinichi Tsukida , Manabu Takano , Masahiro Goto , Takahiro Inoue , Hiromichi Yamada , Junichi Kato , Masaki Ojima
IPC分类号： G03G15/00 , G03G15/20 , G06K15/16 , H04N1/23 , G01D15/06 , G03G21/00
CPC分类号： G03G15/50 , G03G15/2003 , G03G15/6564 , G06K15/16 , G03G2215/00599
摘要： An image forming apparatus comprises includes a feeder means and recorder. The feeder feeds a sheet of recording paper to a predetermined position in response to a spare paper feed signal instructing the feeding of the sheet of recording paper to the predetermined position preliminarily, and then feeds the sheet of recording paper being stopped at the predetermined position again in response to a record request signal. The recorder records an image on the sheet of recording paper fed by the feeder means through an electrophotographic process. The recorder means starts preparation to execute the electrophotographic process upon receiving the spare paper feed signal. As a result, throughput is increased without causing other problems.
摘要翻译：图像形成装置包括馈送装置，记录器。响应于指示将记录纸张预先进给到预定位置的备用供纸信号，馈送器将一张记录纸馈送到预定位置，然后再次将停止在该预定位置的记录纸张送入响应于记录请求信号。记录器通过电子照相处理将图像记录在由馈送装置馈送的记录纸上。记录器装置在接收到备用供纸信号时开始准备执行电子照相处理。结果，吞吐量增加而不引起其他问题。

36. 发明授权

US5353104A Defining member for defining thickness of one-component developer and developing device equipped with it 失效
标题翻译：定义用于定义单组分显影剂和配备其的显影装置的厚度的构件
公开(公告)号：US5353104A
公开(公告)日：1994-10-04
申请号：US18715
申请日：1993-02-17
申请人： Junichi Kato , Masaharu Ohkubo , Masahiro Watabe , Noriyuki Yanai , Masaki Ojima , Hiroshi Sato
发明人： Junichi Kato , Masaharu Ohkubo , Masahiro Watabe , Noriyuki Yanai , Masaki Ojima , Hiroshi Sato
IPC分类号： G03G15/08 , G03G15/09 , G03G15/06
CPC分类号： G03G15/0812 , G03G15/09
摘要： An elastic blade which is maintained in contact with the developing sleeve for defining the thickness of one-component developer to be transported by the developing sleeve to a developing area, is composed of an elastic base member, and a surface layer coated thereon and giving friction on the one-component developer, and the surface layer contains a substance chargeable frictionally to a polarity opposite to the triboelectric polarity of the one-component developer and another substance chargeable frictionally to a polarity the same as the triboelectric polarity of the one-component developer, and is charged frictionally, in total, to a polarity opposite to the polarity of the one-component developer.
摘要翻译：保持与显影套筒保持接触的弹性刮刀由用于限定由显影套筒传送到显影区域的单组分显影剂的厚度由弹性基底构件和涂覆在其上的表面层组成，并产生摩擦在单组分显影剂上，并且表面层含有可摩擦地带电至与单组分显影剂的摩擦电极性相反的极性的物质，以及可摩擦地进行充电的极性与单组分显影剂的摩擦电极性相同的物质并且总体上摩擦地被充电到与单组分显影剂的极性相反的极性。

37. 发明授权

US5153154A Dielectric ceramic composition 失效
标题翻译：介电陶瓷组合物
公开(公告)号：US5153154A
公开(公告)日：1992-10-06
申请号：US724884
申请日：1991-07-02
申请人： Junichi Kato , Hiroshi Kagata
发明人： Junichi Kato , Hiroshi Kagata
IPC分类号： C01G33/00 , C04B35/497
CPC分类号： C04B35/497 , C01G33/006 , C01P2006/40 , C01P2006/80
摘要： A dielectric ceramic composition possessing a high relative dielectric constant, a high unloaded Q value, and an excellent temperature characteristic is expressed as xPbO-.sub.y (Mg.sub.1/3 Nb.sub.2/3)O.sub.2 -zCaO, where x+y+z=1, and x, y, z are in the following ranges, 0.05.ltoreq.x.ltoreq.0.45, 0.4.ltoreq.y.ltoreq.0.55, 0.15.ltoreq.z.ltoreq.0.4, or expressed as xPbO-y(Ni.sub.1/3 Nb.sub.2/3) O.sub.2 -zCaO, where x+y+z=1, and x,y, z are in a quadrangular region with vertexes at A (x=0.25 y=0.7 z=0.05), B (x=0.2 y=0.7 z=0.1), C (x=0.2 y=0.45 z=0.35), and D (x=0.35 y=0.45 z=0.2), which are composition points of a ternary system with vertexes at PbO, (Ni.sub.1/3 Nb.sub.2/3)O.sub.2, and CaO.
摘要翻译：具有高相对介电常数，高无载Q值和优异温度特性的介电陶瓷组合物表示为xPbO-y（Mg1 / 3Nb2 / 3）O2-zCaO，其中x + y + z = 1，x ，y，z在以下范围内，0.05≤x≤0.45,0.4≤y≤0.55,0.15≤z≤0.4，或表示为xPbO-y（Ni1 / 3Nb2 / 3）O2-zCaO，其中x + y + z = 1，x，y，z处于A（x = 0.25y = 0.7z = 0.05）的顶点的四边形区域，B（x = 0.2 y = 0.7 z = 0.1），C（x = 0.2 y = 0.45 z = 0.35）和D（x = 0.35 y = 0.45 z = 0.2），它们是具有PbO顶点的三元体系的组成点（Ni1 / 3Nb2 / 3）O2和CaO。

38. 发明授权

US4885661A Multi-layer ceramic capacitor 失效
标题翻译：多层陶瓷电容
公开(公告)号：US4885661A
公开(公告)日：1989-12-05
申请号：US262501
申请日：1988-10-18
申请人： Yoichiro Yokotani , Hiroshi Kagata , Hiroshi Niwa , Junichi Kato , Toshihiro Mihara
发明人： Yoichiro Yokotani , Hiroshi Kagata , Hiroshi Niwa , Junichi Kato , Toshihiro Mihara
IPC分类号： H01G4/12 , H01B3/12 , H01G4/30
CPC分类号： H01G4/1209
摘要： A mutli-layer ceramic capacitor principally made up of (a) internal electrode layers containing at least copper and (b) ceramic dielectric layers extending between the internal electrode layers. The materials which form the ceramic include copper oxide and an oxide component A and B, which component A is selected from group I of lead, calcium, strontium, and barium, and component B is selected from group II of magnesia, nickel, titanium, zirconium, zinc, niobium, tantalum, and tungsten. The component A includes at least lead and component B includes at least two of the substances in group II, and wherein a ratio between values a and b are chosen so that 0.985
摘要翻译：主要由（a）至少含有铜的内部电极层和（b）在内部电极层之间延伸的陶瓷电介质层构成的多层陶瓷电容器。形成陶瓷的材料包括氧化铜和氧化物组分A和B，组分A选自铅，钙，锶和钡的组I，组分B选自氧化镁，镍，钛，锆，锌，铌，钽和钨。组分A至少包含铅，组分B包括组II中的至少两种物质，并且其中选择值a和b之间的比率使得0.985

39. 发明授权

US4752858A Multi-layer ceramic capacitor 失效
标题翻译：多层陶瓷电容
公开(公告)号：US4752858A
公开(公告)日：1988-06-21
申请号：US24778
申请日：1987-03-11
申请人： Yoichiro Yokotani , Junichi Kato , Toshihiro Mihara
发明人： Yoichiro Yokotani , Junichi Kato , Toshihiro Mihara
IPC分类号： H01G4/30 , C04B35/499 , H01G4/12 , H01B3/12 , H01G4/10
CPC分类号： C04B35/499 , H01G4/1209
摘要： Material forming dielectric ceramics includes an oxide containing a component A and a component B. The component A is selected from a group I of lead, calcium, strontium, and barium. The component B is selected from a group II of magnesium, nickel, titanium, zinc, niobium, and tungsten. The component A includes lead and at least one of the other substances in the group I. The component B includes at least two of the substances in the group II. A ratio between values a and b is chosen so that a/b>1.00, where the value a denotes a total mol value of the substances in the component A and the value b denotes a total mol value of the substances in the component B. Electrode layers are made of copper or an alloy principally containing copper. Since the firing temperature of the dielectric ceramics is low, excellent characteristics of a capacitor are enabled in spite of the fact that electrodes contain copper.
摘要翻译：材料形成介电陶瓷包括含有组分A和组分B的氧化物。组分A选自铅，钙，锶和钡的组I。组分B选自镁，镍，钛，锌，铌和钨的组II。组分A包括铅和组I中的至少一种其它物质。组分B包括组II中的至少两种物质。选择值a和b之间的比率使得a / b> 1.00，其中a表示组分A中物质的总摩尔值，值b表示组分B中物质的总摩尔值。电极层由铜或主要含有铜的合金制成。由于电介质陶瓷的烧制温度低，所以尽管电极含有铜，但电容器的特性也是优异的。

40. 发明授权

US4586972A Method for making multilayer ceramic body 失效
标题翻译：制作多层陶瓷体的方法
公开(公告)号：US4586972A
公开(公告)日：1986-05-06
申请号：US596591
申请日：1984-04-04
申请人： Yoichirou Yokotani , Junichi Kato , Masamitsu Nishida , Hiromu Ouchi , Tsuneharu Nitta
发明人： Yoichirou Yokotani , Junichi Kato , Masamitsu Nishida , Hiromu Ouchi , Tsuneharu Nitta
IPC分类号： B32B18/00 , H01G4/20 , H01G4/30 , B32B31/26 , C04B37/00
CPC分类号： H01G4/30 , B32B18/00 , C04B35/645 , H01G4/206 , C04B2235/48 , C04B2235/6562 , C04B2235/6567 , C04B2237/346 , C04B2237/68 , C04B2237/704 , C04B2237/708 , Y10T29/43 , Y10T29/435
摘要： Plural number of thermo-plastic organic films having ceramic green layer(s) and a layer to become electrode thereon are laminated, thereby to form laminated body, which is hot-pressed to impregnate the organic film substance into the ceramic green layers and into layers to become electrodes, and then is fired; thereby, the ceramic layers are formed very thin, thereby producing a capacitor of large capacitance per volume.
摘要翻译：将多个具有陶瓷绿色层和成为其上的电极的热塑性有机膜层压，形成层压体，将其热压以将有机膜物质浸渍到陶瓷生坯层中，形成层成为电极，然后被烧; 由此，陶瓷层形成得非常薄，从而制造出容积大的电容器。

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