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31. 发明申请

US20120080697A1 LIGHT-EMITTING ELEMENT HAVING A PLURALITY OF CONTACT PARTS 有权
标题翻译：具有多个接触部件的发光元件
公开(公告)号：US20120080697A1
公开(公告)日：2012-04-05
申请号：US13175698
申请日：2011-07-01
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
IPC分类号： H01L33/46 , H01L33/08
CPC分类号： H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.
摘要翻译：发光元件包括支撑基板; 形成在所述支撑基板上的反射层; 形成在反射层上的透明层; 形成在透明层上的发光层叠层; 形成在所述透明层和所述反射层之间的蚀刻停止层; 以及形成在发光层叠层和透明层之间的多个接触部。

32. 发明授权

US5579962A Decanter structure 失效
标题翻译：滗析器结构
公开(公告)号：US5579962A
公开(公告)日：1996-12-03
申请号：US534617
申请日：1995-09-27
申请人： Chao-Hsing Chen
发明人： Chao-Hsing Chen
IPC分类号： B65D23/00 , B65D5/72
CPC分类号： B65D23/00
摘要： An improved decanter structure, which comprises a neck passage, an inner chamber and a partition plate; both sides of the partition plate are thicker than the rest part of the decanter; two symmetrical shoulder passages extend from both sides of the neck passage; the shoulder passages can limit the flow of a liquor upon decanting the liquor, i.e., to provide a buffer effect for controlling the decanting.
摘要翻译：一种改进的滗析器结构，其包括颈部通道，内室和隔板; 隔板的两侧比滗水器的其余部分厚; 两个对称的肩部通道从颈部通道的两侧延伸; 在倾析液体时，肩部通道可以限制液体的流动，即提供用于控制倾析的缓冲效果。

33. 发明授权

US09455242B2 Semiconductor optoelectronic device 有权
标题翻译：半导体光电器件
公开(公告)号：US09455242B2
公开(公告)日：2016-09-27
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/042 , H01L33/00 , H01L25/075 , H01L31/18 , H01L23/00 , H01L33/44 , H01L33/62
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

34. 发明授权

US08598614B2 Light-emitting devices 有权
公开(公告)号：US08598614B2
公开(公告)日：2013-12-03
申请号：US13221369
申请日：2011-08-30
申请人： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
发明人： Chao-Hsing Chen , Yu-Chen Yang , Li-Ping Jou , Hui-Chun Yeh , Yi-Wen Ku
IPC分类号： H01L33/60
CPC分类号： H01L33/08 , H01L33/0012 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/382 , H01L33/44 , H01L33/46 , H01L33/60 , H01L33/62
摘要： A light-emitting device of an embodiment of the present application comprises a semiconductor layer sequence provided with a first main side, a second main side, and an active layer; a beveled trench formed in the semiconductor layer sequence, having a top end close to the second main side, a bottom end, and an inner sidewall connecting the top end and the bottom end. In the embodiment, the inner sidewall is an inclined surface. The light-emitting device further comprises a dielectric layer disposed on the inner sidewall of the beveled trench and the second main side; a first metal layer formed on the dielectric layer; a carrier substrate; and a first connection layer connecting the carrier substrate and the semiconductor layer sequence.

35. 发明授权

US08294174B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08294174B2
公开(公告)日：2012-10-23
申请号：US12870407
申请日：2010-08-27
申请人： Chao-Hsing Chen , Yu-Pin Hsu
发明人： Chao-Hsing Chen , Yu-Pin Hsu
IPC分类号： H01L33/00 , H01L29/417 , H01L29/86 , H01L29/861
CPC分类号： H01L27/156 , H01L33/62 , H01L2224/48091 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
摘要： This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.
摘要翻译：本公开公开了一种包括基板的发光装置; 以及多个整流单元，包括形成在所述基板上的第一整流单元和第二整流单元，用于接收和调节交流信号为直流信号。每个整流单元包括接触层和肖特基金属层。发光装置还包括接收直流信号的多个发光二极管; 以及设置在基板上并覆盖第一整流单元的接触层和第二整流单元的肖特基金属层的第一端子。

36. 发明申请

US20120055532A1 SEMICONDUCTOR OPTOELECTRONIC DEVICE 有权
标题翻译：半导体光电器件
公开(公告)号：US20120055532A1
公开(公告)日：2012-03-08
申请号：US13226095
申请日：2011-09-06
申请人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
发明人： Hsin-Ying Wang , Yi-Ming Chen , Tzu-Chieh Hsu , Chi-Hsing Chen , Chien-Kai Chung , Min-Hsun Hsieh , Chia-Liang Hsu , Chao-Hsing Chen , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Hsiang-Ling Chang
IPC分类号： H01L31/0224 , H01L33/08 , H01L33/42
CPC分类号： H01L25/0753 , H01L24/24 , H01L24/82 , H01L31/1892 , H01L33/0079 , H01L33/44 , H01L33/62 , H01L2924/01029 , H01L2924/12041 , Y02E10/50 , H01L2924/00
摘要： A semiconductor optoelectronic device comprises a growth substrate; a semiconductor epitaxial stack formed on the growth substrate comprising a sacrificial layer with electrical conductivity formed on the growth substrate; a first semiconductor material layer having a first electrical conductivity formed on the sacrificial layer, and a second semiconductor material layer having a second electrical conductivity formed on the first semiconductor material layer; and a first electrode directly formed on the growth substrate and electrically connected to the semiconductor epitaxial stack via the growth substrate.
摘要翻译：半导体光电器件包括生长衬底; 形成在生长衬底上的半导体外延堆叠，包括在生长衬底上形成的具有导电性的牺牲层; 在牺牲层上形成具有第一导电性的第一半导体材料层，以及形成在第一半导体材料层上的具有第二导电性的第二半导体材料层; 以及直接形成在生长衬底上并经由生长衬底电连接到半导体外延堆叠的第一电极。

37. 发明授权

US08110420B2 Light emitting element array 有权
标题翻译：发光元件阵列
公开(公告)号：US08110420B2
公开(公告)日：2012-02-07
申请号：US12961859
申请日：2010-12-07
申请人： Chao-Hsing Chen
发明人： Chao-Hsing Chen
IPC分类号： H01L21/00
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/44 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.
摘要翻译：一种制造发光二极管阵列的方法，包括：提供临时衬底; 在所述临时衬底上形成第一发光层和第二发光层; 形成覆盖所述第一发光叠层的部分的第一绝缘层; 在所述第一绝缘层上形成电线并电连接到所述第一发光堆叠和所述第二发光堆叠; 形成完全覆盖第一发光层的第二绝缘层，第二发光层的导线和部分; 在所述第二绝缘层上形成金属连接层，并电连接到所述第二发光堆叠; 在所述金属连接层上形成导电基板; 去除临时衬底; 以及形成连接到第一发光叠层的第一电极。

38. 发明申请

US20110133219A1 LIGHT EMITTING ELEMENT ARRAY 有权
标题翻译：发光元件阵列
公开(公告)号：US20110133219A1
公开(公告)日：2011-06-09
申请号：US12961859
申请日：2010-12-07
申请人： Chao-Hsing Chen
发明人： Chao-Hsing Chen
IPC分类号： H01L33/08 , H01L33/00
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/44 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.
摘要翻译：一种制造发光二极管阵列的方法，包括：提供临时衬底; 在所述临时衬底上形成第一发光层和第二发光层; 形成覆盖所述第一发光叠层的部分的第一绝缘层; 在所述第一绝缘层上形成电线并电连接到所述第一发光堆叠和所述第二发光堆叠; 形成完全覆盖第一发光层的第二绝缘层，第二发光层的导线和部分; 在所述第二绝缘层上形成金属连接层，并电连接到所述第二发光堆叠; 在所述金属连接层上形成导电基板; 去除临时衬底; 以及形成连接到第一发光叠层的第一电极。

39. 发明授权

US09034672B2 Method for manufacturing light-emitting devices 有权
标题翻译：制造发光装置的方法
公开(公告)号：US09034672B2
公开(公告)日：2015-05-19
申请号：US13527139
申请日：2012-06-19
申请人： Chao-Hsing Chen
发明人： Chao-Hsing Chen
IPC分类号： H01L21/00 , H01L33/48 , H01L33/58 , H01L33/62
CPC分类号： H01L33/486 , H01L33/48 , H01L33/483 , H01L33/501 , H01L33/505 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/12044 , H01L2933/0058 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second optical element on the light-emitting element; forming a second carrier on the first optical element and the second optical element; removing the first carrier after forming the second carrier on the first optical element and the second optical element; and forming two separated conductive structures under the first optical element.
摘要翻译：一种制造发光器件的方法包括在第一载体上形成第一光学元件，其中第一光学元件包括开口; 在开口中形成发光元件; 在所述发光元件上形成第二光学元件; 在所述第一光学元件和所述第二光学元件上形成第二载体; 在第一光学元件和第二光学元件上形成第二载体之后移除第一载体; 以及在所述第一光学元件下形成两个分开的导电结构。

40. 发明申请

US20110157884A1 OPTOELECTRONIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20110157884A1
公开(公告)日：2011-06-30
申请号：US12981788
申请日：2010-12-30
申请人： Chao-Hsing Chen , Alexander Chan Wang , Chia-Ling Hsu
发明人： Chao-Hsing Chen , Alexander Chan Wang , Chia-Ling Hsu
IPC分类号： F21V9/00 , F21S4/00
CPC分类号： H05B33/0821 , H01L24/04 , H01L24/48 , H01L25/0753 , H01L27/15 , H01L33/0066 , H01L33/0079 , H01L33/62 , H01L2224/04042 , H01L2224/48139 , H01L2224/48157 , H01L2224/48465 , H01L2224/4848 , H01L2924/00014 , H01L2224/45099
摘要： A light-emitting device includes an insulating carrier; a light-emitting array formed on the insulating carrier including a first light-emitting circuit having a first light-emitting unit, wherein the first light-emitting circuit is a one-way circuit, a second light-emitting circuit having a second light-emitting unit, wherein the second light-emitting circuit is a one-way circuit, a first conductive layer, a second conductive layer, and a third conductive layer, wherein the first light-emitting circuit is formed between the first conductive layer and the second conductive layer and connects with them electrically, the second light-emitting circuit is formed between the second conductive layer and the third conductive layer and connects with them electrically, wherein an area of the second conductive layer is greater or equal to 1.9×103 μm2.
摘要翻译：发光装置包括绝缘载体; 形成在绝缘载体上的发光阵列，包括具有第一发光单元的第一发光电路，其中所述第一发光电路是单向电路，第二发光电路具有第二发光单元，发光单元，其中第二发光电路是单向电路，第一导电层，第二导电层和第三导电层，其中第一发光电路形成在第一导电层和第二导电层之间导电层并与它们电连接，第二发光电路形成在第二导电层和第三导电层之间并与它们电连接，其中第二导电层的面积大于或等于1.9×10 3μm2。

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