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    • 32. 发明授权
    • Liquid crystal display panel and method for manufacturing the same
    • 液晶显示面板及其制造方法
    • US07782435B2
    • 2010-08-24
    • US12005632
    • 2007-12-28
    • Byoung Ho Lim
    • Byoung Ho Lim
    • G02F1/1343
    • G02F1/134363G02F1/133345G02F1/1368G02F2001/134372
    • A fringe field switching liquid crystal display panel capable of increasing throughput by forming a gate electrode together with a pixel electrode at the lowermost layer to reduce the deposition height of a passivation film to a thickness of a gate insulation film such that particles generated during the deposition of the passivation film may be reduced, and a method for manufacturing the fringe field switching liquid crystal display panel are disclosed. The panel includes a gate line formed on a substrate; a pixel electrode formed on the same layer as the gate line; a gate insulation film for covering the gate line and pixel electrode; a data line formed to intersect with the gate line and having the gate insulation film arranged between the data line and gate line; a passivation film formed on the gate insulation film to cover a thin film transistor; and a common electrode formed to overlap the pixel electrode with the gate insulation film and passivation film arranged between the common electrode and the pixel electrode.
    • 一种边缘场切换液晶显示面板,其能够通过在最下层与像素电极一起形成栅极电极而提高吞吐量,以将钝化膜的沉积高度减小到栅极绝缘膜的厚度,使得在沉积期间产生的颗粒 可以减少钝化膜的制造,并且公开了一种用于制造边缘场切换液晶显示面板的方法。 面板包括形成在基板上的栅极线; 形成在与栅极线相同的层上的像素电极; 栅极绝缘膜,用于覆盖栅极线和像素电极; 形成为与栅极线相交并且具有布置在数据线和栅极线之间的栅极绝缘膜的数据线; 形成在栅极绝缘膜上以覆盖薄膜晶体管的钝化膜; 以及形成为与栅极绝缘膜重叠的公共电极和配置在公共电极和像素电极之间的钝化膜。
    • 33. 发明授权
    • Liquid crystal display panel
    • 液晶显示面板
    • US07687835B2
    • 2010-03-30
    • US11640981
    • 2006-12-19
    • Dong Yeung KwakByoung Ho Lim
    • Dong Yeung KwakByoung Ho Lim
    • H01L29/04
    • G02F1/1368
    • An LCD panel includes a plurality of gate lines and gate electrodes formed on a substrate and a gate insulating film formed on the substrate including the gate lines and the gate electrodes. A semiconductor film is formed in a region on the gate insulating film and an ohmic contact film formed on the semiconductor film. A plurality of data lines cross the gate lines; a source electrode is formed on the ohmic contact film; and a pixel electrode is formed in a pixel region defined by the gate and data lines. A drain electrode is formed on the ohmic contact film, and has an uneven width. Since a portion of drain electrode that overlaps with the gate electrode has a smaller width than a width of other portions of the drain electrode, variation in an area of the drain electrode overlapped with the gate electrode is small, so that variation of the parasitic capacitance can be reduced, thereby improving picture quality.
    • LCD面板包括形成在基板上的多个栅极线和栅电极以及形成在包括栅极线和栅电极的基板上的栅极绝缘膜。 半导体膜形成在栅绝缘膜上的区域和形成在半导体膜上的欧姆接触膜。 多条数据线与栅极线交叉; 源电极形成在欧姆接触膜上; 并且像素电极形成在由栅极和数据线限定的像素区域中。 在欧姆接触膜上形成漏电极,其宽度不均匀。 由于与栅电极重叠的漏电极的一部分的宽度小于漏电极的其他部分的宽度,所以与栅电极重叠的漏电极的面积的变化小,使得寄生电容的变化 可以减少,从而提高图像质量。
    • 34. 发明授权
    • Liquid crystal display device and fabricating method thereof
    • 液晶显示装置及其制造方法
    • US07679699B2
    • 2010-03-16
    • US11168554
    • 2005-06-29
    • Byung Chul AhnByoung Ho LimJae Jun Ahn
    • Byung Chul AhnByoung Ho LimJae Jun Ahn
    • G02F1/1335
    • G02F1/134363G02F1/1368G02F2001/136231
    • A liquid crystal display device, including: first and second substrates; a gate line on the first substrate; a data line crossing the gate line defining a pixel area with a gate insulating film therebetween; a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer with a channel between the source electrode and the drain electrode; a common line in parallel to the gate line on the first substrate; a common electrode extending from the common line into the pixel area; and a pixel electrode on the gate insulating film in the pixel area, wherein the drain electrode overlaps with the pixel electrode to connect to the pixel electrode; and wherein the semiconductor layer is removed from an area where it overlaps a transparent conductive film.
    • 一种液晶显示装置,包括:第一和第二基板; 第一基板上的栅极线; 与栅极线交叉的数据线,其限定了其间具有栅极绝缘膜的像素区域; 包括栅电极,源极,漏电极和半导体层的薄膜晶体管,在源电极和漏电极之间具有沟道; 与第一衬底上的栅极线并联的公共线; 从公共线延伸到像素区域中的公共电极; 以及像素区域中的栅极绝缘膜上的像素电极,其中所述漏电极与所述像素电极重叠以连接到所述像素电极; 并且其中半导体层从与透明导电膜重叠的区域去除。
    • 36. 发明授权
    • Liquid crystal display device and fabricating method thereof
    • 液晶显示装置及其制造方法
    • US07580106B2
    • 2009-08-25
    • US11167097
    • 2005-06-28
    • Byung Chul AhnByoung Ho LimJae Jun Ahn
    • Byung Chul AhnByoung Ho LimJae Jun Ahn
    • G02F1/13G02F1/136
    • G02F1/136227G02F2001/136231H01L27/124H01L27/1288
    • A liquid crystal display device and a fabricating method thereof for simplifying a process are disclosed. A liquid crystal display device comprising first and second substrates; a gate line on the first substrate; a gate insulating film on the first substrate; a data line crossing the gate line to define a pixel area; a pixel hole in the pixel area; a pixel electrode formed of a transparent conductive layer on the gate insulating film in the pixel hole in the pixel area; and a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, wherein the semiconductor layer overlaps with a source/drain metal pattern including the data line, the source electrode, and the drain electrode; wherein the drain electrode protrudes from the semiconductor layer toward an upper portion of the pixel electrode, and the drain electrode connects to the pixel electrode; and wherein the semiconductor layer is removed from where it overlaps the transparent conductive layer.
    • 公开了一种用于简化处理的液晶显示装置及其制造方法。 一种液晶显示装置,包括第一和第二基板; 第一基板上的栅极线; 第一基板上的栅极绝缘膜; 穿过所述栅极线以限定像素区域的数据线; 像素区域中的像素孔; 在像素区域中的像素孔中的栅极绝缘膜上由透明导电层形成的像素电极; 以及包括栅电极,源电极,漏电极和半导体层的薄膜晶体管,其中所述半导体层与包括所述数据线,所述源电极和所述漏电极的源极/漏极金属图案重叠; 其中,所述漏电极从所述半导体层向所述像素电极的上部突出,所述漏电极与所述像素电极连接; 并且其中所述半导体层从其与所述透明导电层重叠的位置移除。
    • 38. 发明申请
    • Thin film transistor array substrate and manufacturing method thereof
    • 薄膜晶体管阵列基板及其制造方法
    • US20070152219A1
    • 2007-07-05
    • US11638513
    • 2006-12-14
    • Byoung Ho Lim
    • Byoung Ho Lim
    • H01L29/04
    • H01L27/124G02F1/136286H01L29/78633
    • A thin film transistor array substrate includes a gate line and a data line intersecting each other on a substrate with a gate insulating film therebetween, a thin film transistor at an intersection of the gate line and the data line, the thin film transistor including a gate electrode electrically connected to the gate line, a semiconductor pattern overlapping the gate electrode with the gate insulating film therebetween, and a source electrode and a drain electrode above the semiconductor pattern, and a pixel electrode contacting the drain electrode of the thin film transistor, the drain electrode substantially completely overlapping at least one of the gate electrode and the gate line.
    • 薄膜晶体管阵列基板包括在其上具有栅极绝缘膜的基板上彼此相交的栅极线和数据线,在栅极线和数据线的交点处的薄膜晶体管,所述薄膜晶体管包括栅极 电连接到栅极线的半导体图案,与栅电极重叠的栅极绝缘膜和半导体图案之上的源电极和漏电极的半导体图案,以及与薄膜晶体管的漏电极接触的像素电极, 漏电极基本上完全重叠栅电极和栅极线中的至少一个。