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    • 31. 发明授权
    • Imaging apparatus with autofocus function, imaging method, storage medium, and integrated circuit
    • 具有自动对焦功能的成像设备,成像方法,存储介质和集成电路
    • US07619189B2
    • 2009-11-17
    • US12326511
    • 2008-12-02
    • Atsushi Yamaguchi
    • Atsushi Yamaguchi
    • G02B27/40
    • G02B27/145G02B7/38G02B27/1013G02B27/144G02B27/16H04N5/23212H04N9/045H04N9/09
    • An imaging apparatus executes AF control without affecting a video signal and prevents video signal qualities in an in-focus state from decreasing. An optical path separation unit 2 separates light from a subject into first and second light beams. A first imaging unit 3 generates a first signal using the first beam. A second imaging unit 7 generates a second signal using the second beam. A control unit 14 generates a contrast evaluation value based on the second signal while changing an optical-path length of the second light beam by back-or-fourth moving the AF-purpose imaging unit 7 and detects a maximum contrast evaluation value, and executes focus control over an optical system 1 based on the optical-path length corresponding to the detected value. An imaging-purpose signal generation unit 15 generates an imaging-purpose video signal using only the first signal in an out-of-focus state, and using the first and second signals in an in-focus state.
    • 成像装置执行AF控制而不影响视频信号,并防止处于对焦状态的视频信号质量降低。 光路分离单元2将来自被摄体的光分离为第一和第二光束。 第一成像单元3使用第一光束产生第一信号。 第二成像单元7使用第二光束产生第二信号。 控制单元14基于第二信号产生对比度评估值,同时通过四分之一移动AF目的成像单元7来改变第二光束的光路长度,并检测最大对比度评估值,并且执行 基于对应于检测值的光路长度对光学系统1进行聚焦控制。 成像用信号生成单元15仅使用处于离焦状态的第一信号,并且使用处于对焦状态的第一信号和第二信号来生成成像用视频信号。
    • 33. 发明授权
    • Detection device for detecting conditions at a target position
    • 用于检测目标位置的状况的检测装置
    • US07605909B2
    • 2009-10-20
    • US11405450
    • 2006-04-18
    • Atsushi YamaguchiYoshihisa SuzukiMasato YamadaShuichi Ichiura
    • Atsushi YamaguchiYoshihisa SuzukiMasato YamadaShuichi Ichiura
    • G01C3/08
    • G01S7/481G01S7/497G01S17/936
    • An object of the present invention is to provide a detection device which does not cause the false detection by receiving laser light from an oncoming car.The pulse laser light modulated with a modulation pattern set every target position is irradiated at the target position from a laser irradiation portion. DSP (Digital Signal Processor) decides that there is an obstacle at the target position only when the modulation pattern of the pulse laser light emitted from the laser emitting portion matches with the modulation pattern of the pulse laser light received by the laser receiving portion. It is suppressed that the detection device misdetects the conditions of the target position when receiving laser light from an oncoming car or the like because modulation pattern of laser light from own does not match with modulation pattern of laser light from the oncoming car or the like.
    • 本发明的目的是提供一种通过接收来自迎面而来的轿厢的激光不会引起错误检测的检测装置。 以每个目标位置设定的调制图案调制的脉冲激光在激光照射部分的目标位置被照射。 只有当从激光发射部分发射的脉冲激光的调制图案与由激光接收部分接收的脉冲激光的调制图案匹配时,DSP(数字信号处理器)才确定目标位置处存在障碍物。 抑制了当从迎面而来的轿厢等接收激光时检测装置误检目标位置的状况,因为来自其的激光的调制图案与迎面而来的轿厢等的激光的调制图案不匹配。
    • 35. 发明申请
    • Double Wavelength Semiconductor Light Emitting Device and Method of Manufacturing the Same
    • 双波长半导体发光器件及其制造方法
    • US20090127570A1
    • 2009-05-21
    • US12224287
    • 2007-02-23
    • Shinichi TamaiKen NakaharaAtsushi Yamaguchi
    • Shinichi TamaiKen NakaharaAtsushi Yamaguchi
    • H01L21/20H01L33/00
    • H01S5/4031B82Y20/00H01S5/0425H01S5/20H01S5/22H01S5/2214H01S5/305H01S5/3063H01S5/3211H01S5/34333H01S5/4087H01S2304/04
    • Provided are a double wavelength semiconductor light emitting device, having an n electrode and p electrode disposed on the same surface side, in which the area of a chip is reduced to increase the number of chips taken from one single wafer, in which light focusing performance of double wavelength optical beams are improved, and in which an active layer of a light emitting element having a longer wavelength can be prevented from deteriorating in a process of manufacturing; and a method of manufacturing the same.Semiconductor lasers D1 and D2 as two light emitting elements having different wavelengths are integrally formed on a common substrate 1. A semiconductor laminate A is deposited on an n-type contact layer 21 in a semiconductor laser D1, and a semiconductor laminate B is deposited in a semiconductor laser D2. The semiconductor laminate A and semiconductor laminate B are configured to have different layer structures. An n electrode 12 formed between the semiconductor lasers D1 and D2 is shared by the semiconductor lasers D1 and D2, and serves as a common electrode on an n side. Additionally, the semiconductor laminate having a shorter wavelength is crystal-grown firstly.
    • 提供了一种双波长半导体发光器件,其具有设置在同一表面侧的n电极和p电极,其中芯片的面积减小以增加从单个晶片获取的芯片的数量,其中光聚焦性能 双波长光束的改善,其中可以防止在制造过程中具有较长波长的发光元件的有源层劣化; 及其制造方法。 作为具有不同波长的两个发光元件的半导体激光器D1和D2一体地形成在公共基板1上。半导体层叠体A沉积在半导体激光器D1中的n型接触层21上,并且半导体层叠体B沉积在 半导体激光器D2。 半导体层叠体A和半导体层叠体B具有不同的层结构。 形成在半导体激光器D1和D2之间的n电极12由半导体激光器D1和D2共享,并且用作n侧的公共电极。 此外,首先将具有较短波长的半导体层叠体晶体生长。
    • 36. 发明申请
    • Semiconductor Light Emitting Device and Method for Manufacturing the Same
    • 半导体发光器件及其制造方法
    • US20090026475A1
    • 2009-01-29
    • US12087173
    • 2006-12-28
    • Atsushi YamaguchiKen Nakahara
    • Atsushi YamaguchiKen Nakahara
    • H01L33/00
    • H01L33/42H01L33/20H01L33/44H01L2933/0083
    • Concaves and convexes are formed in a light transmitting conductive layer provided on a surface of a light emitting device made of nitride semiconductor, thereby light emitted from a light emitting layer is totally reflected repeatedly in a semiconductor lamination portion and a substrate and can be effectively taken out without attenuation, and external quantum efficiency can be improved. A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion.
    • 凹凸形成在由氮化物半导体制成的发光元件的表面上的透光性导电层中,从发光层发出的光在半导体层叠部和基板中反复全反射,能够有效地取出 没有衰减,可以提高外部量子效率。 通过在衬底(1)的一侧层叠包括n型层(3)和p型层(5)的氮化物半导体层以形成发光层,形成半导体层叠部(6) 并且在半导体层叠部的表面侧设置有透光性导电层(7)。 在透光导电层的表面上设置凹凸图案,即凹部(7a)。 p侧电极(8)设置在透光导电层上,n侧电极(9)与通过蚀刻半导体层叠部分的一部分露出的n型层电连接。