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31. 发明授权

US07973367B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07973367B2
公开(公告)日：2011-07-05
申请号：US12650009
申请日：2009-12-30
申请人： Kenshi Kanegae , Akihiko Tsuzumitani , Atsushi Ikeda
发明人： Kenshi Kanegae , Akihiko Tsuzumitani , Atsushi Ikeda
IPC分类号： H01L27/092 , H01L27/095
CPC分类号： H01L21/32139 , H01L21/28052 , H01L21/28114 , H01L21/321 , H01L21/32132 , H01L21/32134 , H01L21/32137 , H01L29/665
摘要： In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness.
摘要翻译：为了使栅电极的上表面不具有尖锐部分，在沉积难熔金属以进行硅化处理之前，栅极顶表面的端部是圆形的。这减少了在热处理中产生的膜应力的集约应用，使得能够形成具有均匀的足够厚度的硅化物层。

32. 发明申请

US20100311851A1 ELASTOMER POROUS MATERIAL AND METHOD OF PRODUCING THE SAME 有权
标题翻译：弹性体多孔材料及其制造方法
公开(公告)号：US20100311851A1
公开(公告)日：2010-12-09
申请号：US12745576
申请日：2008-12-01
申请人： Wataru Nemoto , Kazuya Takato , Asuka Koyanagi , Jun Ogawa , Atsushi Ikeda
发明人： Wataru Nemoto , Kazuya Takato , Asuka Koyanagi , Jun Ogawa , Atsushi Ikeda
IPC分类号： C08J9/00
CPC分类号： C08L83/04 , C08J9/283 , C08J2383/04 , G03G15/0808 , G03G15/0818 , G03G15/2057 , G03G21/0058 , G03G2215/1614
摘要： In the elastomer porous material of the invention, when cells in a first observation region of a first cross section are observed at a certain magnification, cells having an aspect ratio a/b, wherein a represents the maximum diameter of each cell and b represents the length of the minor axis of that cell as measured in a direction orthogonal thereto, of 1.3 or less account for 70% or more of all cells in the first observation region, and, when cells in a second observation region of a second cross section orthogonal to the first cross section are observed at a certain magnification, cells having an aspect ratio a/b, wherein a represents the maximum diameter of each cell and b represents the length of the minor axis of that cell as measured in a direction orthogonal thereto, of 1.3 or less account for 70% or more of all cells in the second observation region.
摘要翻译：在本发明的弹性体多孔体中，当以一定的倍率观察第一截面的第一观察区域中的细胞时，具有纵横比a / b的细胞，其中a表示每个细胞的最大直径，b表示在与其正交的方向上测量的该单元的短轴的长度为1.3以下，占第一观察区域中的全部细胞的70％以上，并且当第二截面的第二观察区域中的细胞正交以一定的倍率观察到第一横截面，具有纵横比a / b的单元，其中a表示每个单元的最大直径，b表示在与其正交的方向上测量的该单元的短轴的长度，为1.3以下，占第二观察区域的全部细胞的70％以上。

33. 发明申请

US20100305225A1 ELASTOMER POROUS MATERIAL AND METHOD OF PRODUCING THE SAME 有权
标题翻译：弹性体多孔材料及其制造方法
公开(公告)号：US20100305225A1
公开(公告)日：2010-12-02
申请号：US12745669
申请日：2008-12-01
申请人： Wataru Nemoto , Kazuya Takato , Asuka Koyanaki , Jun Ogawa , Atsushi Ikeda
发明人： Wataru Nemoto , Kazuya Takato , Asuka Koyanaki , Jun Ogawa , Atsushi Ikeda
IPC分类号： C08J9/00
CPC分类号： C08J9/28 , B29C44/3403 , B29C67/202 , C08J2201/0504 , C08J2383/04 , Y10T428/26
摘要： In the elastomer porous material of the invention, when cells in a first observation region of a first cross section are observed at a certain magnification, cells having a shape factor SF2, which indicates the remoteness from complete roundness and is represented by the following formula: SF   2 = P 2 4  π   A × 100 (wherein A represents the area of each cell, and P represents the perimeter length thereof), of 130 or less account for 80% or more of all cells in the first observation region, and, when cells in a second observation region of a second cross section orthogonal to the first cross section are observed at a certain magnification, cells having a shape factor SF2, which indicates the remoteness from complete roundness and is represented by the same formula (wherein A represents the area of each cell, and P represents the perimeter length thereof), of 130 or less account for 80% or more of all cells in the second observation region.
摘要翻译：在本发明的弹性体多孔材料中，当以一定的倍率观察第一截面的第一观察区域的细胞时，具有形状因子SF2的细胞，其表示从完全圆度偏离并由下式表示： SF÷2 = P 2 4＆pgr A×100（其中A表示每个细胞的面积，P表示其周长）为130以下，占第一观察区域的全部细胞的80％以上，并且当第二观察区域中的细胞在一定的放大倍数下观察与第一截面正交的第二截面的观察区域，具有形状因子SF2的单元，其表示从完全圆度偏离并由相同的式（其中A表示每个单元的面积，P表示其周长）为130以下，占第二观察区域的全部细胞的80％以上。

34. 发明申请

US20100102396A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100102396A1
公开(公告)日：2010-04-29
申请号：US12650009
申请日：2009-12-30
申请人： Kenshi Kanegae , Akihiko Tsuzumitani , Atsushi Ikeda
发明人： Kenshi Kanegae , Akihiko Tsuzumitani , Atsushi Ikeda
IPC分类号： H01L27/088 , H01L29/78
CPC分类号： H01L21/32139 , H01L21/28052 , H01L21/28114 , H01L21/321 , H01L21/32132 , H01L21/32134 , H01L21/32137 , H01L29/665
摘要： In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness.
摘要翻译：为了使栅电极的上表面不具有尖锐部分，在沉积难熔金属以进行硅化处理之前，栅极顶表面的端部是圆形的。这减少了在热处理中产生的膜应力的集约应用，使得能够形成具有均匀的足够厚度的硅化物层。

35. 发明申请

US20080083989A1 Semiconductor Device and Method for Fabricating the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080083989A1
公开(公告)日：2008-04-10
申请号：US10578351
申请日：2005-05-20
申请人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
发明人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： A semiconductor device includes insulation films (6 and 8) formed over a silicon substrate (1), a buried wire (14) formed in the insulation films (6 and 8), and a barrier metal film (A1) formed between each of the insulation films (6 and 8) and the buried wire (14). The barrier metal film (A1) is formed of a metal oxide film (11), a transition layer (12a) and a metal film (13) stacked in this order in the direction from a side of the barrier metal film (A1) at which the insulation films (6 and 8) exists to a side thereof at which the buried wire (14) exists. The transition layer (12a) is formed of a single atomic layer having substantially an intermediate composition between respective compositions of the metal oxide film (11) and the metal film (13).
摘要翻译：半导体器件包括形成在硅衬底（1）上的绝缘膜（6和8），形成在绝缘膜（6和8）中的掩埋线（14）和形成在绝缘膜（6和8）之间的阻挡金属膜绝缘膜（6和8）和掩埋线（14）。阻挡金属膜（A 1）由金属氧化物膜（11），过渡层（12a）和金属膜（13）沿着从阻挡金属膜（A 1），其中绝缘膜（6和8）存在于存在埋地线（14）的一侧。过渡层（12a）由在金属氧化物膜（11）和金属膜（13）的各组成之间基本上具有中间组成的单一原子层形成。

36. 发明申请

US20070145787A1 Sunroof device 有权
标题翻译：天窗装置
公开(公告)号：US20070145787A1
公开(公告)日：2007-06-28
申请号：US11315240
申请日：2005-12-23
申请人： Atsushi Ikeda , Takashi Kikuta , Kentaro Hirose , Nobuyasu Bessho , Kinju Uchida , Samson Asfaw , Kenji Hori , Robert Gore , Hiroshi Makino
发明人： Atsushi Ikeda , Takashi Kikuta , Kentaro Hirose , Nobuyasu Bessho , Kinju Uchida , Samson Asfaw , Kenji Hori , Robert Gore , Hiroshi Makino
IPC分类号： B60J7/057
CPC分类号： B60J7/05
摘要： A sunroof device includes a roof panel having a first opening portion, a ceiling member having a second opening portion so as to face the first opening portion, a movable panel moved between a full-closed position and an open position, the movable panel passing through a half-closed position, a motor for driving the movable panel, a controlling means for controlling an operation of the motor, an operating member to be operated or released by a passenger in the vehicle, and a switch for inputting an operation signal for operating the motor, and inputting a stop signal for stopping the motor. The controlling means drives the motor until the movable panel reaches the full-closed position while moving towards the full-closed position by the operating member being operated even if the operating member is released after the movable panel reaches the half-closed position.
摘要翻译：天窗装置包括具有第一开口部分的顶板，具有与第一开口部分相对的第二开口部分的顶板部件，在全闭合位置和打开位置之间移动的可移动板，可移动板通过半闭合位置，用于驱动可动面板的电动机，用于控制电动机的操作的控制装置，由乘客在车辆中操作或释放的操作构件，以及用于输入操作信号的开关电机，并输入停止信号，停止电机。即使在可动面板到达半闭合位置之后操作构件被释放，控制装置驱动马达，直到可移动面板到达全闭合位置，同时由操作构件操作而向全闭合位置移动。

37. 发明申请

US20070132100A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070132100A1
公开(公告)日：2007-06-14
申请号：US10578004
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagwa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagwa , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76843 , C23C14/027 , C23C14/16 , H01L21/76846
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried interconnect 10 formed in the insulation film 6, and a barrier metal film A1 formed between the insulation film 6 and the buried interconnect 10. The barrier metal film A1 is formed of a lamination layer of a metal compound film 7 and a metal film 9 which does not loose its conductivity when being oxidized. In the vicinity of an interface between the metal compound film 7 and the metal film 9, a fusion layer 8 obtained through fusion of the metal compound film 7 and the metal film 9 is provided.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋互连10，以及形成在绝缘膜6和掩埋互连10之间的阻挡金属膜A 1。阻挡金属膜A 1由金属化合物膜7和金属膜9的层叠层形成，金属膜9在被氧化时不会导致其导电性松动。在金属化合物膜7和金属膜9之间的界面附近，提供通过熔融金属化合物膜7和金属膜9获得的熔融层8。

38. 发明申请

US20070108616A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070108616A1
公开(公告)日：2007-05-17
申请号：US10578003
申请日：2005-05-20
申请人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
发明人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋金属互连8和形成在绝缘膜6和金属互连8之间的阻挡金属膜7。阻挡金属膜7是金属化合物膜。金属化合物膜的特征在于包括形成绝缘膜的元素中的至少一种。

39. 发明申请

US20060205578A1 Fixing roller 有权
标题翻译：固定辊
公开(公告)号：US20060205578A1
公开(公告)日：2006-09-14
申请号：US11370887
申请日：2006-03-09
申请人： Jun Ogawa , Atsushi Ikeda
发明人： Jun Ogawa , Atsushi Ikeda
IPC分类号： F16C13/00 , B21B1/40 , A01B29/00
CPC分类号： G03G15/2053 , G03G15/2057 , G03G2215/2051 , Y10T29/4956 , Y10T29/49563
摘要： Disclosed is a fixing roller which comprises a core 16, a porous material layer 22 disposed in surrounding relation to an outer peripheral surface of the core 16, and a thin-walled metal sleeve 26 covering an outer peripheral surface of the porous material layer 22. The porous material layer 22 comprises a closed cell-type silicone elastomer. The present invention provides a fixing roller capable of ensuring enhanced durability and maintaining a usable state over long periods under the condition of being actually driven and rotated.
摘要翻译：公开了一种定影辊，其包括芯16，围绕芯16的外周表面设置的多孔材料层22和覆盖多孔材料层22的外周表面的薄壁金属套筒26。多孔材料层22包括闭孔型硅氧烷弹性体。本发明提供一种定影辊，其能够在实际驱动旋转的条件下，确保长时间地提高耐久性和保持使用状态。

40. 发明申请

US20060152143A1 White-emitting compounds, process for the production thereof, and white-emitting devices 审中-公开
标题翻译：白色发光化合物，其制备方法和白色发光装置
公开(公告)号：US20060152143A1
公开(公告)日：2006-07-13
申请号：US10562933
申请日：2004-06-24
申请人： Tadao Nakaya , Atsushi Ikeda , Mitukura Sato , Tomoyuki Saikawa
发明人： Tadao Nakaya , Atsushi Ikeda , Mitukura Sato , Tomoyuki Saikawa
IPC分类号： C07D471/02 , H01J1/62
CPC分类号： C07D471/04 , C09K11/06 , C09K2211/1014 , C09K2211/1029 , H05B33/14 , Y02B20/181
摘要： The objective of the present invention is to provide a novel white light-emitting compound, which is a single substance, capable of emitting white light by itself, a simple process of preparing the white light-emitting compound, and a white light-emitting element including the white light-emitting compound. The white light-emitting compound according to the present invention is characterized by its structure represented by formula (1): wherein R1 denotes a hydrogen atom, an alkyl group with 1 to 10 carbon atoms, or a specified aryl group, wherein there are no cases where both R1s are hydrogen atoms.
摘要翻译：本发明的目的是提供一种能够自己发出白光的单一物质的白色发光性化合物，制备白色发光性化合物的简单方法和白色发光元件包括白色发光性化合物。根据本发明的白色发光性化合物的特征在于其由式（1）表示的结构：其中R 1表示氢原子，具有1至10个碳原子的烷基或指定的芳基，其中不存在两个R 1是氢原子的情况。

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