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31. 发明授权

US08088297B2 Combined etching and doping media for silicon dioxide layers and underlying silicon 失效
标题翻译：用于二氧化硅层和下层硅的组合蚀刻和掺杂介质
公开(公告)号：US08088297B2
公开(公告)日：2012-01-03
申请号：US11995449
申请日：2006-06-13
申请人： Armin Kuebelbeck , Werner Stockum
发明人： Armin Kuebelbeck , Werner Stockum
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： C09K13/04 , C03C17/23 , C03C17/3411 , C03C2218/33 , C09K13/06 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both for the etching of silicon dioxide layers and also for the doping of underlying silicon layers. The present invention also relates secondly to a process in which these media are employed.
摘要翻译：本发明首先涉及适用于蚀刻二氧化硅层以及掺杂下层硅层的HF /无氟化物蚀刻和掺杂介质。本发明还涉及使用这些介质的方法。

32. 发明申请

US20110021037A1 COMPOSITION FOR MANUFACTURING SIO2 RESIST LAYERS AND METHOD OF ITS USE 有权
标题翻译：用于制造SIO2电阻层的组合物及其使用方法
公开(公告)号：US20110021037A1
公开(公告)日：2011-01-27
申请号：US12934365
申请日：2009-03-02
申请人： Werner Stockum , Ingo Koehler , Arjan Meijer , Paul Craig Brookes , Katie Patterson , Mark James
发明人： Werner Stockum , Ingo Koehler , Arjan Meijer , Paul Craig Brookes , Katie Patterson , Mark James
IPC分类号： H01L21/314 , H01B1/12
CPC分类号： C23C18/12
摘要： The present invention relates to compositions, which are useful for the generation of patterned or structured SiO2-layers or of SiO2-lines during the manufacturing process of semiconductor devices, and which are suitable for the application in inkjet operations. The present invention also relates to a modified process of manufacturing semiconductor devices taking advantage of these new compositions.
摘要翻译：本发明涉及组合物，其可用于在半导体器件的制造过程中产生图案化或结构化的SiO 2层或SiO 2线，并且适用于在喷墨操作中的应用。本发明还涉及利用这些新组合物制造半导体器件的改进方法。

33. 发明授权

US07824563B2 Etching media for oxidic, transparent, conductive layers 有权
标题翻译：蚀刻介质用于氧化，透明，导电层
公开(公告)号：US07824563B2
公开(公告)日：2010-11-02
申请号：US11996620
申请日：2006-07-03
申请人： Werner Stockum , Armin Kuebelbeck
发明人： Werner Stockum , Armin Kuebelbeck
IPC分类号： C03C25/68
CPC分类号： C09K13/04 , C03C15/00 , C09K13/06 , G03F7/40 , H01L31/1884 , H01L51/5206 , Y02E10/50
摘要： The present invention relates to a novel etching medium for the structuring of transparent, conductive layers, as are used, for example, in the production of liquid-crystal displays (LCDS) using flat-panel screens or of organic light-emitting displays (OLEDs) or in thin-film solar cells. Specifically, it relates to particle-free compositions by means of which fine structures can be etched selectively in oxidic, transparent and conductive layers without damaging or attacking adjacent areas. The novel liquid etching medium can advantageously be applied by means of printing processes to the oxidic, transparent, conductive layers to be structured. Subsequent heat treatment accelerates or initiates the etching process.
摘要翻译：本发明涉及一种用于结构化透明导电层的新型蚀刻介质，例如用于使用平板屏幕或有机发光显示器（OLEDs）制造液晶显示器（LCDS））或薄膜太阳能电池。具体地说，本发明涉及无氧化物组合物，通过该组合物可以在氧化，透明和导电层中选择性地蚀刻细小的结构，而不损坏或攻击邻近区域。新颖的液体蚀刻介质可以有利地通过印刷方法施加到待构造的氧化物，透明导电层上。随后的热处理加速或启动蚀刻工艺。

34. 发明申请

US20080217576A1 Etching Media for Oxidic, Transparent, Conductive Layers 有权
标题翻译：蚀刻介质用于氧化，透明，导电层
公开(公告)号：US20080217576A1
公开(公告)日：2008-09-11
申请号：US11996620
申请日：2006-07-03
申请人： Werner Stockum , Armin Kuebelbeck
发明人： Werner Stockum , Armin Kuebelbeck
IPC分类号： C09K13/04 , H01L21/306
CPC分类号： C09K13/04 , C03C15/00 , C09K13/06 , G03F7/40 , H01L31/1884 , H01L51/5206 , Y02E10/50
摘要： The present invention relates to a novel etching medium for the structuring of transparent, conductive layers, as are used, for example, in the production of liquid-crystal displays (LCDS) using flat-panel screens or of organic light-emitting displays (OLEDs) or in thin-film solar cells. Specifically, it relates to particle-free compositions by means of which fine structures can be etched selectively in oxidic, transparent and conductive layers without damaging or attacking adjacent areas. The novel liquid etching medium can advantageously be applied by means of printing processes to the oxidic, transparent, conductive layers to be structured. Subsequent heat treatment accelerates or initiates the etching process.
摘要翻译：本发明涉及一种用于结构化透明导电层的新型蚀刻介质，例如用于使用平板屏幕或有机发光显示器（OLEDs）制造液晶显示器（LCDS））或薄膜太阳能电池。具体地说，本发明涉及无氧化物组合物，通过该组合物可以在氧化，透明和导电层中选择性地蚀刻细小的结构，而不损坏或攻击邻近区域。新颖的液体蚀刻介质可以有利地通过印刷方法施加到待构造的氧化物，透明导电层上。随后的热处理加速或启动蚀刻工艺。

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