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31. 发明授权

US06184052B2 Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom 有权
标题翻译：用于制造高灵敏度电容和谐振集成传感器，特别是加速度计和陀螺仪以及由其制造的传感器的方法
公开(公告)号：US06184052B2
公开(公告)日：2001-02-06
申请号：US09428863
申请日：1999-10-26
申请人： Benedetto Vigna , Paolo Ferrari , Marco Ferrera , Pietro Montanini
发明人： Benedetto Vigna , Paolo Ferrari , Marco Ferrera , Pietro Montanini
IPC分类号： H01L2100
CPC分类号： H01L21/764 , B81B2201/0235 , B81B2201/0242 , B81B2203/0136 , B81B2203/0307 , B81C1/00246 , B81C2201/0109 , B81C2201/014 , B81C2203/0735 , G01C19/56 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/76202
摘要： A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.
摘要翻译：使用具有高密度钨芯的悬置结构形成具有高灵敏度的传感器。为了制造它，将氧化硅牺牲层，多晶硅层，钨层和碳化硅层相继沉积在单晶硅体上。通过选择性地去除碳化硅，钨和多晶硅层来限定悬浮结构。然后形成覆盖钨层的未覆盖端的碳化硅间隔物，然后除去牺牲层。

32. 发明授权

US06134088A Electromagnetic head with magnetoresistive means connected to a magnetic core 失效
标题翻译：具有连接到磁芯的磁阻装置的电磁头
公开(公告)号：US06134088A
公开(公告)日：2000-10-17
申请号：US109117
申请日：1998-07-02
申请人： Bruno Murari , Benedetto Vigna , Paolo Ferrari
发明人： Bruno Murari , Benedetto Vigna , Paolo Ferrari
IPC分类号： G11B5/31 , G11B5/39 , G11B5/33
CPC分类号： G11B5/3925 , G11B5/3183
摘要： An electromagnetic head for a storage device comprises a magnetic core forming a magnetic circuit, and a magnetoresistive means. The magnetic core is interrupted by an air-gap, thereby separating a first pole and second pole of the magnetic core. The magnetoresistive means is disposed in the region of the air-gap, and is connected to the magnetic core so as to be connected in the magnetic circuit.
摘要翻译：用于存储装置的电磁头包括形成磁路的磁芯和磁阻装置。磁芯被气隙中断，从而分离磁芯的第一极和第二极。磁阻装置设置在气隙的区域中，并且与磁芯连接以便连接在磁路中。

33. 发明授权

US6104073A Semiconductor integrated capacitive acceleration sensor and relative fabrication method 失效
标题翻译：半导体集成电容式加速度传感器及相关制造方法
公开(公告)号：US6104073A
公开(公告)日：2000-08-15
申请号：US903511
申请日：1997-07-30
申请人： Paolo Ferrari , Mario Foroni , Benedetto Vigna , Flavio Villa
发明人： Paolo Ferrari , Mario Foroni , Benedetto Vigna , Flavio Villa
IPC分类号： G01P15/02 , B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L29/84 , H01L29/82 , H01L21/00 , H01L27/01 , H01L27/20
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： The acceleration sensor is formed in a monocrystalline silicon wafer forming part of a dedicated SOI substrate presenting a first and second monocrystalline silicon wafer separated by an insulting layer having an air gap. A well is formed in the second wafer over the air gap and is subsequently trenched up to the air gap to release the monocrystalline silicon mass forming the movable mass of the sensor; the movable mass has two numbers of movable electrodes facing respective pluralities of fixed electrodes. In the idle condition, each movable electrode is separated by different distances from the two fixed electrodes facing the movable electrode.
摘要翻译：加速度传感器形成在形成由具有气隙的绝缘层分离的第一和第二单晶硅晶片的专用SOI衬底的一部分的单晶硅晶片中。在空气间隙中的第二晶片中形成一个阱，然后将其向上延伸到气隙以释放形成传感器的可移动质量块的单晶硅质量块; 可移动物体具有面对多个固定电极的两个可动电极数。在空闲状态下，每个可移动电极与面对可动电极的两个固定电极分开不同的距离。

34. 发明授权

US08173513B2 Method for manufacturing a semiconductor pressure sensor 有权
标题翻译：半导体压力传感器的制造方法
公开(公告)号：US08173513B2
公开(公告)日：2012-05-08
申请号：US12163110
申请日：2008-06-27
申请人： Flavio Francesco Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
发明人： Flavio Francesco Villa , Gabriele Barlocchi , Pietro Corona , Benedetto Vigna , Lorenzo Baldo
IPC分类号： H01L21/76
CPC分类号： G01L9/0073 , G01L9/0045
摘要： Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.
摘要翻译：制造半导体压力传感器的方法，其中在硅衬底中，挖沟和界定壁; 闭合层外延生长，封闭顶部的沟槽并形成悬浮膜; 进行热处理以使壁的硅迁移并在悬浮膜下方形成封闭空腔; 并且形成用于将悬浮膜的偏转转换成电信号的结构。

35. 发明授权

US08049287B2 Substrate-level assembly for an integrated device, manufacturing process thereof and related integrated device 有权
标题翻译：集成器件的基板级组装，其制造工艺和相关的集成器件
公开(公告)号：US08049287B2
公开(公告)日：2011-11-01
申请号：US12102709
申请日：2008-04-14
申请人： Chantal Combi , Benedetto Vigna , Federico Giovanni Ziglioli , Lorenzo Baldo , Manuela Magugliani , Ernesto Lasalandra , Caterina Riva
发明人： Chantal Combi , Benedetto Vigna , Federico Giovanni Ziglioli , Lorenzo Baldo , Manuela Magugliani , Ernesto Lasalandra , Caterina Riva
IPC分类号： H01L29/84
CPC分类号： B81B7/0061 , B81B7/02 , B81B2201/0235 , B81B2201/0264 , B81C1/0023 , H01L2224/48091 , H01L2224/73265 , H01L2924/1461 , H01L2924/3025 , H04R1/04 , H04R19/005 , H01L2924/00014 , H01L2924/00
摘要： A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.
摘要翻译：一种基板级组件，其具有具有顶面的半导体材料的器件基板并且容纳第一集成器件，所述第一集成器件包括形成在所述器件衬底内的掩埋腔，以及悬挂在所述顶面附近的所述掩埋腔上的膜。封盖衬底在顶面上方连接到器件衬底，以便以这样的方式覆盖第一集成器件，使得在膜上方设置第一空白空间。电接触元件将集成器件与衬底级组件的外部电连接。在一个实施例中，器件衬底集成了至少一个设置有相应膜的集成器件，并且在另一个集成器件的相应膜上提供了与第一空白空间流体隔离的另外的空白空间。

36. 再颁专利

USRE41889E1 Process for manufacturing high-sensitivity accelerometric and gyroscopic integrated sensors, and sensor thus produced 有权
标题翻译：用于制造高灵敏度加速度和陀螺仪集成传感器的过程以及由此产生的传感器
公开(公告)号：USRE41889E1
公开(公告)日：2010-10-26
申请号：US10360367
申请日：2003-02-05
申请人： Paolo Ferrari , Benedetto Vigna , Pietro Montanini , Marco Ferrera
发明人： Paolo Ferrari , Benedetto Vigna , Pietro Montanini , Marco Ferrera
IPC分类号： H01L21/00
CPC分类号： H01L21/764 , B81B2201/0235 , B81B2201/0242 , B81C1/00246 , B81C2201/0109 , B81C2201/0177 , B81C2203/0735 , B81C2203/0778 , G01P15/0802 , G01P15/125 , G01P2015/0814 , H01L21/76202
摘要： A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.
摘要翻译：从外延层开始形成形成地震质量块的移动体，并且由具有高密度的钨的加权区域覆盖。为了制造质量，在衬底中形成掩埋的导电区域。然后，同时，在要形成可移动物体的区域中形成牺牲区域，并且在掩埋的导电区域上形成氧化物绝缘区域，以便部分地覆盖它们。然后使用核区域生长外延层。沉积和限定钨层，并且使用碳化硅层作为掩模，限定悬浮结构。最后，去除牺牲区域，形成气隙。

37. 发明申请

US20080011080A1 MICROELECTROMECHANICAL INERTIAL SENSOR, IN PARTICULAR FOR FREE-FALL DETECTION APPLICATIONS 有权
标题翻译：微电子实时传感器，特别适用于自由落体检测应用
公开(公告)号：US20080011080A1
公开(公告)日：2008-01-17
申请号：US11777702
申请日：2007-07-13
申请人： Angelo Merassi , Sarah Zerbini , Ernesto Lasalandra , Benedetto Vigna
发明人： Angelo Merassi , Sarah Zerbini , Ernesto Lasalandra , Benedetto Vigna
IPC分类号： G01P15/18 , G01P15/125
CPC分类号： G11B19/04 , G01P15/0891 , G01P15/125 , G01P15/18 , G01P2015/082
摘要： An inertial sensor provided with a detection structure sensitive to a first, a second and a third component of acceleration along respective directions of detection, and generating respective electrical quantities as a function of said components of acceleration. The detection structure supplies at output a resultant electrical quantity obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration acting on the inertial sensor, given by a vector sum of the components of acceleration. In particular, the detection structure is of a microelectromechanical type, and comprises a mobile portion made of semiconductor material forming with a fixed portion a first, a second and a third detection capacitor, and an electrical-interconnection portion, connecting the detection capacitors in parallel; the resultant electrical quantity being the capacitance obtained from said connection in parallel.
摘要翻译：一种惯性传感器，其具有对沿着检测方向的加速度的第一，第二和第三分量敏感的检测结构，并且产生作为所述加速度分量的函数的相应的电量。检测结构在输出时提供作为所述电量的组合获得的合成电量，并且与由加速度分量的矢量和给出的作用在惯性传感器上的合成加速度的值相关联。特别地，检测结构是微机电型的，并且包括由半导体材料制成的可移动部分，该半导体材料形成有固定部分，第一，第二和第三检测电容器以及并联连接检测电容器的电互连部分 ; 所得到的电量是从所述连接并联获得的电容。

38. 发明授权

US07009799B2 Tiltable device, in particular hard disk actuator device, with roll and pitch angle active control 有权
公开(公告)号：US07009799B2
公开(公告)日：2006-03-07
申请号：US10161054
申请日：2002-05-30
申请人： Simone Sassolini , Benedetto Vigna
发明人： Simone Sassolini , Benedetto Vigna
IPC分类号： G11B5/60 , G11B21/12
CPC分类号： G11B5/6005 , G11B5/5552 , G11B5/5582
摘要： In an actuator device for hard disks a suspension element carries a slider that is subject to undesired vibrations which give rise to rotations of the slider with respect to a nominal position. An electrostatically controlled position-control structure is arranged between the suspension and the slider and is controlled in an active way so as to generate torsions of the platform that counter the undesired rotations. The position-control structure comprises a platform of conductive material and control electrodes arranged underneath the platform. The platform is connected to a load-bearing structure by spring elements that enable movements of roll and pitch. Four control electrodes are arranged according to the quadrants of a square and can be selectively biased for generating electrical forces acting on the platform.

39. 发明申请

US20050274184A1 Planar inertial sensor, in particular for portable devices having a stand-by function 有权
标题翻译：平面惯性传感器，特别是具有待机功能的便携式设备
公开(公告)号：US20050274184A1
公开(公告)日：2005-12-15
申请号：US10948095
申请日：2004-09-23
申请人： Sarah Zerbini , Angelo Merassi , Ernesto Lasalandra , Benedetto Vigna
发明人： Sarah Zerbini , Angelo Merassi , Ernesto Lasalandra , Benedetto Vigna
IPC分类号： G01P15/08 , G01P15/125 , G01P15/00
CPC分类号： G01P15/0891 , G01P15/125 , G01P2015/0857 , H04M2250/12
摘要： A planar inertial sensor includes a first region and a second region of semiconductor material. The second region is capacitively coupled, and mobile with respect to the first region. The second region extends in a plane and has second portions, which face respective first portions of the first region. Movement of the second region, relative to the first region, in any direction belonging to the plane modifies the distance between the second portions and the first portions, which in turn modifies a value of the capacitive coupling.
摘要翻译：平面惯性传感器包括第一区域和第二半导体材料区域。第二区域电容耦合，并相对于第一区域移动。第二区域在平面中延伸并且具有面对第一区域的相应第一部分的第二部分。第二区域相对于第一区域在属于该平面的任何方向上的运动修改了第二部分和第一部分之间的距离，从而改变了电容耦合的值。

40. 发明授权

US06784522B2 Electronic semiconductor device having a thermal spreader 有权
标题翻译：具有散热器的电子半导体器件
公开(公告)号：US06784522B2
公开(公告)日：2004-08-31
申请号：US09874381
申请日：2001-06-04
申请人： Bruno Murari , Ubaldo Mastromatteo , Benedetto Vigna
发明人： Bruno Murari , Ubaldo Mastromatteo , Benedetto Vigna
IPC分类号： H01L2972
CPC分类号： H01L24/01 , H01L23/3157 , H01L23/36 , H01L23/3735 , H01L23/4827 , H01L2224/274 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082
摘要： The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.
摘要翻译：电子器件形成在包括半导体材料体的模具中，该半导体材料体具有被覆盖结构覆盖的第一面和第二面。在切割成骰子之前，在制造晶片期间，金属的整体散热器在第二面上电镀生长。覆盖结构包括钝化区域和不透明聚酰亚胺的保护区域; 保护区域和钝化区域在接触焊盘上方打开以引导引线通过。

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