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31. 发明申请

US20120220113A1 Method of Manufacturing Semiconductor Device Having Metal Gate 有权
标题翻译：具有金属栅极的半导体器件的制造方法
公开(公告)号：US20120220113A1
公开(公告)日：2012-08-30
申请号：US13033616
申请日：2011-02-24
申请人： Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Shui-Yen Lu , Pei-Yu Chou , Shin-Chi Chen , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chan-Lon Yang , Teng-Chun Tsai , Chun-Hsien Lin
发明人： Po-Jui Liao , Tsung-Lung Tsai , Chien-Ting Lin , Shao-Hua Hsu , Shui-Yen Lu , Pei-Yu Chou , Shin-Chi Chen , Jiunn-Hsiung Liao , Shang-Yuan Tsai , Chan-Lon Yang , Teng-Chun Tsai , Chun-Hsien Lin
IPC分类号： H01L21/28
CPC分类号： H01L29/66545 , H01L21/82345 , H01L21/823842 , H01L29/4966
摘要： The present invention provides a method of manufacturing semiconductor device having metal gate. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench and then a first metal layer and a first material layer are formed in the first trench. Next, the first metal layer and the first material layer are flattened. The second sacrifice gate is removed to form a second trench and then a second metal layer and a second material layer are formed in the second trench. Lastly, the second metal layer and the second material layer are flattened.
摘要翻译：本发明提供一种制造具有金属栅极的半导体器件的方法。首先，提供基板。具有第一牺牲栅极的第一导电型晶体管和具有第二牺牲栅极的第二导电型晶体管设置在衬底上。去除第一牺牲栅极以形成第一沟槽，然后在第一沟槽中形成第一金属层和第一材料层。接下来，第一金属层和第一材料层变平。去除第二牺牲栅极以形成第二沟槽，然后在第二沟槽中形成第二金属层和第二材料层。最后，第二金属层和第二材料层变平。

32. 发明授权

US11424782B2 Slide type mobile phone holder 有权
公开(公告)号：US11424782B2
公开(公告)日：2022-08-23
申请号：US17220243
申请日：2021-04-01
申请人： Chien-Ting Lin
发明人： Chien-Ting Lin
IPC分类号： F16M11/04 , H04B1/3877 , H04M1/04
摘要： A slide type mobile phone holder includes: a first coupling portion having a first clamp portion and provided with first coupling and outer accommodation portions at first coupling and outer surfaces thereof, respectively, a first coupling wall and a first sliding groove provided between the first coupling and outer accommodation portions, the first coupling accommodation portion having a first coupling protrusion and a first hook; a second coupling portion having a second clamp portion and provided with second coupling and outer accommodation portions at second coupling and outer surfaces thereof, respectively, a second coupling wall and a second sliding groove provided between the second coupling and outer accommodation portions, the second coupling accommodation portion having a second coupling protrusion and a second hook; and a spring member abutting against the first and second coupling protrusions. The first and second coupling portions are assembled together for clamping a mobile phone.

33. 发明授权

US11360524B2 Electronic device 有权
公开(公告)号：US11360524B2
公开(公告)日：2022-06-14
申请号：US17168136
申请日：2021-02-04
申请人： Ming-Chung Peng , Ko-Fan Chen , Chun-Yi Ho , Chien-Ting Lin , Yu-Jung Liu , Hsin-Jung Lee , Hsin-Yu Huang , Jih-Houng Lee , Ming-Feng Liu , Kuo-Jung Wu , Kuo-Pin Chen , Chia-Ling Lee , Jing-Jie Lin
发明人： Ming-Chung Peng , Ko-Fan Chen , Chun-Yi Ho , Chien-Ting Lin , Yu-Jung Liu , Hsin-Jung Lee , Hsin-Yu Huang , Jih-Houng Lee , Ming-Feng Liu , Kuo-Jung Wu , Kuo-Pin Chen , Chia-Ling Lee , Jing-Jie Lin
IPC分类号： G06F1/16 , H05K1/18
摘要： An electronic device includes a first body, a second body, two hinges, and at least one electronic assembly. The two hinges are connected between the first body and the second body, and the first body and the second body are adapted to rotate relatively through the two hinges. The electronic assembly is connected to the second body and is located between the two hinges.

34. 外观设计

USD896301S1 3-way tripod head 有权
公开(公告)号：USD896301S1
公开(公告)日：2020-09-15
申请号：US29676422
申请日：2019-01-10
申请人： Chien-Ting Lin
设计人： Chien-Ting Lin

35. 发明授权

US10288102B2 Fastening device having a tubular sleeve member for mounting on a tube or immobilizing two telescopically connected tubes 有权
公开(公告)号：US10288102B2
公开(公告)日：2019-05-14
申请号：US15007250
申请日：2016-01-27
申请人： Chien-Ting Lin
发明人： Chien-Ting Lin
IPC分类号： F16B7/14
摘要： A fastening device includes a tubular sleeve member adapted to be sleeved around a tube. The sleeve member defines a space for receiving the tube therein and a notch. The sleeve member further has first and second through holes aligned with the notch and a nut reception space defined in the first through hole. A fixing element includes a fixing nut disposed within the nut reception space, a fixing bolt extending through the through holes to fasten the fixing nut threadedly and a tightening-enforcing element disposed exterior of the nut reception space and mounted on the fixing bolt such that tightening of the fixing element relative to the fixing nut in a first section and further tightening of the tightening-enforcing element relative to the fixing bolt in a second section results in pressing of the sleeve member against the tube, thereby immobilizing the sleeve member and the tube relative to each other.

36. 发明授权

US09640095B2 Photography light panel reflector clamp 有权
公开(公告)号：US09640095B2
公开(公告)日：2017-05-02
申请号：US15173618
申请日：2016-06-04
申请人： Chien-Ting Lin
发明人： Chien-Ting Lin
IPC分类号： G09F7/18 , G03B15/06 , F16B2/06 , G09F15/00 , F21V21/088 , F21V7/18 , F16M11/00
CPC分类号： G09F7/18 , F16B2/065 , F16M11/00 , F21V7/18 , F21V21/088 , G03B15/06 , G09F15/0025 , G09F15/0037 , G09F2007/1804 , G09F2007/1813 , G09F2007/1817 , G09F2007/183
摘要： The present invention provides a photography light panel reflector clamp for mounting a photography light panel reflector with a rod member. The photography light panel reflector clamp of the present invention includes a central member, a groove and a turning clamp set. A rod member clamping seat is disposed on the central member, and a mounting portion is disposed at an opening of the rod member clamping seat. The groove is formed across a mounting face on a side of the central member, and the turning clamp set is disposed on the central member next to the groove. A flange of the photography light panel reflector has a segment fitted in the groove, and the turning clamp set is utilized to fix the segment of the flange of the photography light panel reflector in the groove with the photography light panel reflector clamp.

37. 发明授权

US09523904B2 Light cover with x-shaped structure 有权
标题翻译：带X形结构的灯罩
公开(公告)号：US09523904B2
公开(公告)日：2016-12-20
申请号：US14870382
申请日：2015-09-30
申请人： Chien-Ting Lin
发明人： Chien-Ting Lin
IPC分类号： G03B15/06 , F21V1/06 , A45B19/00
CPC分类号： G03B15/06 , A45B2019/001 , F21V1/06
摘要： A lighting assembly used in photographing or video recording has a light cover with X-shaped structure, which includes a main body and two elastic supporting rods. The main body has a light holder fitting opening at a center thereof. The two elastic supporting rods are fixed along four edges of the main body in such a way that they cross each other at the center thereof at the light holder fitting opening. The light cover can be folded from a tent-like form to an easy-to-carry flattened form.
摘要翻译：用于拍摄或录像的照明组件具有X形结构的遮光罩，其包括主体和两个弹性支撑杆。主体在其中心具有灯座配件开口。两个弹性支撑杆沿着主体的四个边缘固定，使得它们在灯架配件开口处的中心彼此交叉。灯罩可以从帐篷状折叠成易于携带的扁平形式。

38. 发明申请

US20130126972A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130126972A1
公开(公告)日：2013-05-23
申请号：US13304086
申请日：2011-11-23
申请人： Chang-Tzu Wang , Mei-Ling Chao , Chien-Ting Lin
发明人： Chang-Tzu Wang , Mei-Ling Chao , Chien-Ting Lin
IPC分类号： H01L27/12 , H01L21/336
CPC分类号： H01L29/66795 , H01L21/26513 , H01L21/823821 , H01L27/0924
摘要： A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate of a first conductivity type, a fin, a gate, source and drain regions of a second conductivity type, and a first doped region of the second conductivity type. A plurality of isolation structures is formed on the substrate. The fin is disposed on the substrate between two adjacent isolation structures. The gate is disposed on the isolation structures and covers a portion of the fin, wherein the portion of the fin covered by the gate is of the first conductivity type. The source and drain regions is configured in the fin at respective sides of the gate. The first doped region is configured in the fin underlying the source and drain regions and adjoining the substrate. The first doped region has an impurity concentration lower than that of the source and drain regions.
摘要翻译：提供了一种半导体器件及其制造方法。半导体器件包括具有第二导电类型的第一导电类型，鳍状物，栅极，源极和漏极区域以及第二导电类型的第一掺杂区域的衬底。在基板上形成多个隔离结构。翅片设置在两个相邻隔离结构之间的基板上。栅极设置在隔离结构上并覆盖翅片的一部分，其中由栅极覆盖的鳍的部分是第一导电类型。源极和漏极区域在栅极的相应侧配置在鳍片中。第一掺杂区域配置在源极和漏极区域下方的鳍片中，并与衬底相邻。第一掺杂区的杂质浓度低于源区和漏区。

39. 发明授权

US08198151B2 Method for fabricating a metal gate structure 有权
标题翻译：金属栅极结构的制造方法
公开(公告)号：US08198151B2
公开(公告)日：2012-06-12
申请号：US12890725
申请日：2010-09-27
申请人： Chien-Ting Lin , Che-Hua Hsu , Li-Wei Cheng
发明人： Chien-Ting Lin , Che-Hua Hsu , Li-Wei Cheng
IPC分类号： H01L21/8238
CPC分类号： H01L21/28123 , H01L21/823437 , H01L21/823475 , H01L21/823481 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545
摘要： A method of fabricating a metal gate structure is provided. The method includes providing a semiconductor substrate with a planarized polysilicon material; patterned the planarized polysilicon material to form at least a first gate and a second gate, wherein the first gate is located on the active region and the second gate at least partially overlaps with the isolation region; forming an inter-layer dielectric material covering the gates; planarizing the inter-layer dielectric material until exposing the gates and forming an inter layer-dielectric layer; performing an etching process to remove the gates to form a first recess and a second recess within the inter-layer dielectric layer; forming a gate dielectric material on a surface of each of the recesses; forming at least a metal material within the recesses; and performing a planarization process.
摘要翻译：提供一种制造金属栅极结构的方法。该方法包括：提供具有平坦化多晶硅材料的半导体衬底; 将平坦化的多晶硅材料图案化以形成至少第一栅极和第二栅极，其中第一栅极位于有源区上，而第二栅极至少部分地与隔离区重叠; 形成覆盖所述栅极的层间电介质材料; 平面化层间电介质材料，直到露出栅极并形成层间介电层; 执行蚀刻工艺以移除所述栅极以在所述层间电介质层内形成第一凹部和第二凹槽; 在每个所述凹部的表面上形成栅极电介质材料; 在所述凹部内形成至少一种金属材料; 并执行平面化处理。

40. 发明授权

US08084824B2 Metal gate transistor and method for fabricating the same 有权
标题翻译：金属栅极晶体管及其制造方法
公开(公告)号：US08084824B2
公开(公告)日：2011-12-27
申请号：US12208352
申请日：2008-09-11
申请人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Cheng-Hsien Chou , Tian-Fu Chiang , Chien-Ming Lai , Yi-Wen Chen , Jung-Tsung Tseng , Chien-Ting Lin , Guang-Hwa Ma
发明人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Cheng-Hsien Chou , Tian-Fu Chiang , Chien-Ming Lai , Yi-Wen Chen , Jung-Tsung Tseng , Chien-Ting Lin , Guang-Hwa Ma
IPC分类号： H01L29/423
CPC分类号： H01L29/6656 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L29/165 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545 , H01L29/66636 , H01L29/7848
摘要： A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.
摘要翻译：公开了一种用于制造金属栅极晶体管的方法。首先，提供具有第一晶体管区域和第二晶体管区域的衬底。接下来，在基板上形成层叠膜，其中层叠膜包括至少一个高k电介质层和第一金属层。图案化层叠的膜以在第一晶体管区域和第二晶体管区域中形成多个栅极，在栅极上形成电介质层，并且介电层的一部分被平坦化，直到到达每个栅极的顶部。第一金属层从第二晶体管区域的栅极去除，并且第二金属层形成在电介质层的表面上，每个栅极用于在第一晶体管区域和第二晶体管区域中形成多个金属栅极。

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