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31. 发明申请

US20180085787A1 RBAR DEVICE INCLUDING AT LEAST ONE AIR-RING 审中-公开
公开(公告)号：US20180085787A1
公开(公告)日：2018-03-29
申请号：US15280866
申请日：2016-09-29
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Stefan Bader , Kevin J. Grannen
IPC分类号： B06B1/06
CPC分类号： B06B1/0644 , B06B1/0611
摘要： A reversed c-axis bulk acoustic resonator (RBAR) device includes a bottom electrode disposed over a substrate and at least a portion of a cavity formed in the substrate; a first piezoelectric layer disposed over the bottom electrode, the first piezoelectric layer having a first polarity; a middle electrode disposed over the first piezoelectric layer; a second piezoelectric layer disposed over the bottom electrode, the second piezoelectric layer having a second polarity that is substantially opposite to the first polarity of the first piezoelectric layer; and a top electrode disposed over the second piezoelectric layer. The RBAR device further includes at least one air-ring formed between the top electrode and the second piezoelectric layer, between the second piezoelectric layer and the middle electrode, between the middle electrode and the first piezoelectric layer, or between the first piezoelectric layer and the bottom electrode.

32. 发明授权

US09853626B2 Acoustic resonator comprising acoustic redistribution layers and lateral features 有权
公开(公告)号：US09853626B2
公开(公告)日：2017-12-26
申请号：US14526259
申请日：2014-10-28
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Stefan Bader , John Choy
IPC分类号： H03H9/17 , H03H9/13
CPC分类号： H03H9/132 , H03H9/173 , H03H9/175
摘要： An acoustic resonator device including a piezoelectric layer, a first electrode disposed adjacent to a first surface of the piezoelectric layer, and a second electrode disposed adjacent to a second surface of the piezoelectric layer. At least one of the first electrode and the second electrode includes a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance. The acoustic resonator device further includes at least one lateral feature for increasing quality factor Q of the acoustic resonator structure. The at least one lateral feature includes at least one of an air-ring between the piezoelectric layer and the second electrode, and a frame on at least one of the first electrode and the piezoelectric layer.

33. 发明申请

US20170310304A1 COMPOSITE SURFACE ACOUSTIC WAVE (SAW) DEVICE WITH ABSORBING LAYER FOR SUPPRESSION OF SPURIOUS RESPONSES 审中-公开
公开(公告)号：US20170310304A1
公开(公告)日：2017-10-26
申请号：US15136866
申请日：2016-04-22
申请人： Avago Technologies General IP (Singapore) Pte. Ltd
发明人： Dariusz Burak , Suresh Sridaran , Stephen Roy Gilbert , Richard C. Ruby
IPC分类号： H03H9/64 , H03H9/02 , H01L41/047 , H01L41/107 , H03H9/25
摘要： A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

34. 发明授权

US09748918B2 Acoustic resonator comprising integrated structures for improved performance 有权
公开(公告)号：US09748918B2
公开(公告)日：2017-08-29
申请号：US14092793
申请日：2013-11-27
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , John Choy , Phil Nikkel , Kevin J. Grannen
IPC分类号： H03H9/15 , H03H9/02 , H03H9/17 , H03H9/13
CPC分类号： H03H9/02102 , H03H9/02118 , H03H9/132 , H03H9/173
摘要： An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and an air cavity disposed in the substrate below at least a portion of a main membrane region defined by an overlap between the first electrode. The acoustic resonator structure may further comprise various integrated structures at or around the main membrane region to improve its electrical performance.

35. 发明授权

US09698753B2 Laterally coupled resonator filter having apodized shape 有权
公开(公告)号：US09698753B2
公开(公告)日：2017-07-04
申请号：US14219866
申请日：2014-03-19
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak
IPC分类号： H03H9/02 , H03H9/145 , H03H9/54 , H03H9/58 , H03H9/64
CPC分类号： H03H9/02228 , H03H9/02992 , H03H9/14558 , H03H9/547 , H03H9/584 , H03H9/6426
摘要： A laterally coupled resonator filter device includes a bottom electrode, a piezoelectric layer disposed on the bottom electrode, and a top contour electrode disposed on the piezoelectric layer. The top contour electrode includes first and second top comb electrodes. The first top comb electrode include a first top bus bar and multiple first top fingers extending in a first direction from the first top bus bar. The second top comb electrode includes a second top bus bar and multiple second top fingers extending in a second direction from the second top bus bar, the second direction being substantially opposite to the first direction such that the first and second top fingers form a top interleaving pattern providing an acoustic filter having an apodized shape.

36. 发明授权

US09621126B2 Bulk acoustic resonator device including temperature compensation structure comprising low acoustic impedance layer 有权
公开(公告)号：US09621126B2
公开(公告)日：2017-04-11
申请号：US14521406
申请日：2014-10-22
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Qiang Zou , Genichi Tsuzuki
IPC分类号： H03H9/02 , H01L41/047 , H03H3/007 , H03H9/17 , H03H3/04
CPC分类号： H03H9/02102 , H01L41/0471 , H03H3/0076 , H03H9/173 , H03H9/175 , H03H2003/0407
摘要： An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate.

37. 发明授权

US09548438B2 Acoustic resonator comprising acoustic redistribution layers 有权
标题翻译：包括声学再分布层的声谐振器
公开(公告)号：US09548438B2
公开(公告)日：2017-01-17
申请号：US14231325
申请日：2014-03-31
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Stefan Bader , Alexandre Shirakawa , Kevin J. Grannen
IPC分类号： H03H9/02 , H01L41/047 , H03H9/17 , H03H9/13 , H03H9/58
CPC分类号： H01L41/0477 , H03H9/02086 , H03H9/132 , H03H9/171 , H03H9/584
摘要： An acoustic resonator structure comprises a piezoelectric layer having a first surface and a second surface, a first electrode disposed adjacent to the first surface, and a second electrode disposed adjacent to the second surface. The first electrode comprises a first conductive layer disposed adjacent to the piezoelectric layer and having a first acoustic impedance, and a second conductive layer disposed on a side of the first conductive layer opposite the piezoelectric layer and having a second acoustic impedance greater than the first acoustic impedance. The second electrode may be disposed between a substrate and the piezoelectric layer, and it may comprise a third conductive layer disposed adjacent to the piezoelectric layer and having a third acoustic impedance, and a fourth conductive layer disposed on a side of the third conductive layer opposite the piezoelectric layer and having a fourth acoustic impedance greater than the third acoustic impedance.
摘要翻译：声谐振器结构包括具有第一表面和第二表面的压电层，邻近第一表面设置的第一电极和邻近第二表面设置的第二电极。第一电极包括邻近压电层设置并具有第一声阻抗的第一导电层和设置在与压电层相对的第一导电层的一侧上并具有大于第一声学阻抗的第二声阻抗的第二导电层阻抗。第二电极可以设置在基板和压电层之间，并且其可以包括邻近压电层设置并具有第三声阻抗的第三导电层，以及布置在第三导电层的相反侧的第四导电层并且具有大于第三声阻抗的第四声阻抗。

38. 发明授权

US09490770B2 Acoustic resonator comprising temperature compensating layer and perimeter distributed bragg reflector 有权
标题翻译：声谐振器包括温度补偿层和周边分布布拉格反射器
公开(公告)号：US09490770B2
公开(公告)日：2016-11-08
申请号：US14092026
申请日：2013-11-27
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , John Choy , Kevin J. Grannen , Phil Nikkel
IPC分类号： H03H9/08 , H03H9/15 , H03H9/02 , H03H9/17 , H03H9/58
CPC分类号： H03H9/02102 , H03H9/173 , H03H9/175 , H03H9/585
摘要： An acoustic resonator structure includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed on the bottom electrode, a top electrode disposed on the piezoelectric layer, a cavity disposed beneath the bottom electrode, and a temperature compensating feature. The temperature compensating feature has a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric and electrode layers. The acoustic resonator structure further includes an acoustic reflector disposed over the substrate around a perimeter of the cavity. The acoustic reflector includes a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material.
摘要翻译：声谐振器结构包括设置在基板上的底部电极，设置在底部电极上的压电层，设置在压电层上的顶部电极，设置在底部电极下方的空腔和温度补偿特征。温度补偿特征具有用于抵消压电层和电极层的负温度系数的至少一部分的正温度系数。声谐振器结构还包括设置在围绕空腔的周边的衬底上的声反射器。声反射器包括层叠在高声阻抗材料层上的低声阻抗材料层。

39. 发明授权

US09490418B2 Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer 有权
标题翻译：声谐振器包括具有温度补偿层的套环和声反射器
公开(公告)号：US09490418B2
公开(公告)日：2016-11-08
申请号：US14092077
申请日：2013-11-27
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , John Choy , Kevin J. Grannen , Qiang Zou
IPC分类号： H03H9/15 , H01L41/053 , H03H9/02 , H03H9/17
CPC分类号： H01L41/053 , H03H9/02118 , H03H9/173
摘要： An acoustic resonator structure includes an acoustic reflector over a cavity formed in a substrate, the acoustic reflector including a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material. The acoustic resonator further includes a bottom electrode on the layer of low acoustic impedance material, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and a collar formed outside a main membrane region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode. The collar has an inner edge substantially aligned with a boundary of or overlapping the main membrane region. The layer of the low acoustic impedance material includes a temperature compensating material having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the bottom electrode and the top electrode.
摘要翻译：声谐振器结构包括在衬底中形成的空腔上的声反射器，声反射器包括层叠在高声阻抗材料层上的低声阻抗材料层。声谐振器还包括在低声阻抗材料层上的底部电极，底部电极上的压电层，压电层上的顶部电极和形成在主膜区域外侧的套环，该主体膜区域由顶部电极，压电层和底电极。套环具有基本上与主膜区域的边界或与主膜区域重叠的内边缘。低声阻抗材料层包括具有正温度系数的温度补偿材料，用于抵消压电层，底电极和顶电极的负温度系数的至少一部分。

40. 发明授权

US09425764B2 Accoustic resonator having composite electrodes with integrated lateral features 有权
标题翻译：声谐振器具有集成横向特征的复合电极
公开(公告)号：US09425764B2
公开(公告)日：2016-08-23
申请号：US13660941
申请日：2012-10-25
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Phil Nikkel , Chris Feng , John Choy
IPC分类号： H03H9/13 , H03H9/15 , H03H9/02 , H03H9/17
CPC分类号： H03H9/02118 , H03H9/131 , H03H9/173 , H03H9/175
摘要： A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic reflector, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer. At one of the bottom electrode and the top electrode is a composite electrode having an integrated lateral feature, arranged between planar top and bottom surfaces of the composite electrode and configured to create a cut-off frequency mismatch.
摘要翻译：体声波（BAW）谐振器装置包括在空腔和声反射器之一上的衬底上的底电极，底电极上的压电层和压电层上的顶电极。在底部电极和顶部电极中的一个是具有集成的横向特征的复合电极，其布置在复合电极的平面顶部和底部表面之间，并且被配置为产生截止频率失配。

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