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31. 发明申请

US20170243943A1 THIN FILM TRANSISTOR FABRICATION UTLIZING AN INTERFACE LAYER ON A METAL ELECTRODE LAYER 审中-公开
公开(公告)号：US20170243943A1
公开(公告)日：2017-08-24
申请号：US15049903
申请日：2016-02-22
申请人： Applied Materials, Inc.
发明人： Tae Kyung WON , Dong-kil YIM
IPC分类号： H01L29/40 , H01L29/49 , H01L29/45 , H01L29/786
CPC分类号： H01L29/408 , H01L29/45 , H01L29/4908 , H01L29/786 , H01L29/78675 , H01L29/7869
摘要： Embodiments of the disclosure generally provide methods of forming thin film transistor (TFT) device structure with good interface management between a metal electrode layer and a nearby insulating material so as to provide high electrical performance devices, or for other suitable display applications. In one embodiment, a thin film transistor structure includes a metal electrode layer disposed on a barrier layer formed above a gate insulating material layer, an interface layer disposed on the metal electrode layer, wherein the interface layer is an oxygen free dielectric material layer sized to be formed predominately on the metal electrode layer, and an insulating material layer disposed on the interface layer, wherein the insulating material layer is an oxygen containing dielectric layer.

32. 发明申请

US20170207327A1 OXYGEN VACANCY OF IGZO PASSIVATION BY FLUORINE TREATMENT 审中-公开
公开(公告)号：US20170207327A1
公开(公告)日：2017-07-20
申请号：US15359325
申请日：2016-11-22
申请人： Applied Materials, Inc.
发明人： Hao-Chien HSU , Dong-kil YIM , Tae Kyung WON , Xuena ZHANG , Won Ho SUNG , Rodney Shunleong LIM
IPC分类号： H01L29/66 , H01L21/02 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02631 , H01L21/02664 , H01L29/7869
摘要： Embodiments of the present disclosure generally relate to methods for forming a TFT having a metal oxide layer. The method may include forming a metal oxide layer and treating the metal oxide layer with a fluorine containing gas or plasma. The fluorine treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.

33. 发明申请

US20170162678A1 MULTILAYER PASSIVATION OR ETCH STOP TFT 有权
公开(公告)号：US20170162678A1
公开(公告)日：2017-06-08
申请号：US15412545
申请日：2017-01-23
申请人： Applied Materials, Inc.
发明人： Dong-Kil YIM , Tae Kyung WON , Seon-Mee CHO , John M. WHITE
IPC分类号： H01L29/66 , H01L21/467 , H01L29/24 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/467 , H01L29/24 , H01L29/78603 , H01L29/78606 , H01L29/7869
摘要： The present invention generally relates to TFTs and methods for fabricating TFTs. For either back channel etch TFTs or for etch stop TFTs, multiple layers for the passivation layer or the etch stop layers permits a very dense capping layer to be formed over a less dense back channel protection layer. The capping layer can be sufficiently dense so that few pin holes are present and thus, hydrogen may not pass through to the semiconductor layer. As such, hydrogen containing precursors may be used for the capping layer deposition.

34. 发明申请

US20140273342A1 VTH CONTROL METHOD OF MULTIPLE ACTIVE LAYER METAL OXIDE SEMICONDUCTOR TFT 审中-公开
标题翻译：多层活性层金属氧化物半导体TFT的VTH控制方法
公开(公告)号：US20140273342A1
公开(公告)日：2014-09-18
申请号：US14201532
申请日：2014-03-07
申请人： Applied Materials, Inc.
发明人： Dong-Kil YIM , Rodney Shunleong LIM , Evelyn SCHEER , Tae Kyung WON , Soo Young CHOI , Harvey YOU
IPC分类号： H01L29/66
CPC分类号： H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： The present invention generally relates to TFTs and methods for fabricating TFTs. When multiple layers are used for the semiconductor material in a TFT, a negative Vth shift may result. By exposing the semiconductor layer to an oxygen containing plasma and/or forming an etch stop layer thereover, the negative Vth shift may be negated.
摘要翻译：本发明一般涉及TFT和TFT的制造方法。当TFT中的半导体材料使用多层时，可能产生负的Vth偏移。通过将半导体层暴露于含氧等离子体和/或在其上形成蚀刻停止层，可以否定负的Vth偏移。

35. 发明申请

US20140272187A1 ADHESION IMPROVEMENT BETWEEN CVD DIELECTRIC FILM AND CU SUBSTRATE 审中-公开
标题翻译： CVD介质膜与铜基板之间的粘合改进
公开(公告)号：US20140272187A1
公开(公告)日：2014-09-18
申请号：US14180339
申请日：2014-02-13
申请人： Applied Materials, Inc.
发明人： Tae Kyung WON , Yi CUI , Beom Soo PARK , Soo Young CHOI
IPC分类号： C23C16/02 , C23C16/34
CPC分类号： C23C16/345 , C23C16/0245
摘要： Methods of forming dielectric layers on a copper substrate are disclosed herein. In one embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, forming and delivering the cleaning plasma to the substrate to form a cleaned surface on the substrate, forming and delivering the adhesion plasma to the surface of the substrate to form a copper compound thereon and depositing a dielectric layer over the copper compound. In another embodiment, a method of depositing a dielectric layer can include positioning a copper substrate in a process chamber, delivering an adhesion plasma to the copper substrate to form a copper compound and flowing a deposition gas into the process chamber to deposit a dielectric layer over the copper compound, wherein the flow between the adhesion plasma and the deposition gas is continuous.
摘要翻译：本文公开了在铜基底上形成电介质层的方法。在一个实施例中，沉积电介质层的方法可以包括将铜衬底定位在处理室中，形成并将清洁等离子体输送到衬底，以在衬底上形成清洁表面，形成并将粘合等离子体输送到所述基板在其上形成铜化合物并在所述铜化合物上沉积介电层。在另一个实施例中，沉积电介质层的方法可以包括将铜衬底定位在处理室中，将粘合等离子体输送到铜衬底以形成铜化合物并将沉积气体流入处理室以沉积介电层铜化合物，其中粘附等离子体和沉积气体之间的流动是连续的。

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