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31. 发明申请

US20120222807A1 BUFFER ASSEMBLY AND APPLICATION METHOD THEREOF 有权
标题翻译：缓冲器组装及其应用方法
公开(公告)号：US20120222807A1
公开(公告)日：2012-09-06
申请号：US13309569
申请日：2011-12-02
申请人： QUN HUANG , CHE-YU CHOU , TAI-SHAN ZHU , JI-PING WU
发明人： QUN HUANG , CHE-YU CHOU , TAI-SHAN ZHU , JI-PING WU
IPC分类号： B32B38/10 , B65D65/28
CPC分类号： B65D81/05 , B65D85/48 , G02F1/133308 , G02F2001/133322 , G02F2201/503 , G02F2202/28 , Y10T156/1052 , Y10T428/15
摘要： A buffer assembly includes a buffer body and an adhesive layer on the buffer body. The buffer body includes a buffer portion and a mounting portion surrounding the buffer portion. The adhesive layer includes a first adhesive portion and a second adhesive portion surrounding the first adhesive portion. The first adhesive portion and the second adhesive portion respectively correspond to the buffer portion and the mounting portion. A first cutting line is disposed between the buffer portion and the mounting portion such that the mounting portion is separable from the buffer portion along the first cutting line. A second cutting line is disposed between the first adhesive portion and the second adhesive portion such that the second adhesive portion is separable from the first adhesive portion along the second cutting line. The second cutting line superposes the first cutting line.
摘要翻译：缓冲组件包括缓冲体和缓冲体上的粘合剂层。缓冲体包括缓冲部分和围绕缓冲部分的安装部分。粘合剂层包括第一粘合剂部分和围绕第一粘合剂部分的第二粘合剂部分。第一粘合部分和第二粘合剂部分分别对应于缓冲部分和安装部分。第一切割线设置在缓冲部分和安装部分之间，使得安装部分沿着第一切割线与缓冲部分分离。第二切割线设置在第一粘合部分和第二粘合部分之间，使得第二粘合部分沿着第二切割线与第一粘合部分分离。第二条切割线叠加第一条切割线。

32. 发明申请

US20120127048A1 ANTENNA MODULE 有权
标题翻译：天线模块
公开(公告)号：US20120127048A1
公开(公告)日：2012-05-24
申请号：US13052206
申请日：2011-03-21
申请人： MING-YU CHOU
发明人： MING-YU CHOU
IPC分类号： H01Q1/36 , H01Q9/30
CPC分类号： H01Q1/243 , H01Q5/364 , H01Q9/0421
摘要： An antenna includes a first antenna portion, a second antenna portion, a third antenna portion, a feed portion, and a ground portion. The first antenna portion perpendicularly connects to the feed portion and the ground portion. The second antenna portion connects to the first antenna portion. The third antenna portion connects to the feed portion. The first antenna portion and the second antenna portion are both located on a plane perpendicular to the feed portion. The feed portion, the ground portion, and the third antenna portion are coplanar.
摘要翻译：天线包括第一天线部分，第二天线部分，第三天线部分，馈电部分和接地部分。第一天线部分垂直地连接到馈电部分和接地部分。第二天线部分连接到第一天线部分。第三天线部分连接到馈送部分。第一天线部分和第二天线部分都位于垂直于馈电部分的平面上。馈电部分，接地部分和第三天线部分是共面的。

33. 发明授权

US08168374B2 Method of forming a contact hole 有权
标题翻译：形成接触孔的方法
公开(公告)号：US08168374B2
公开(公告)日：2012-05-01
申请号：US12854913
申请日：2010-08-12
申请人： Pei-Yu Chou , Jiunn-Hsiung Liao
发明人： Pei-Yu Chou , Jiunn-Hsiung Liao
IPC分类号： G03F7/26
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338
摘要： A method of forming a contact hole is provided. A pattern is formed in a photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a first opening. Another pattern is formed in another photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a second opening. The pattern having the first, and second openings is exchanged into the interlayer dielectric layer, and etching stop layer to form the contact hole. The present invention has twice exposure processes and twice etching processes to form the contact hole having small distance.
摘要翻译：提供一种形成接触孔的方法。在光致抗蚀剂层中形成图案。将图案交换成硅光致抗蚀剂层以形成第一开口。在另一光致抗蚀剂层中形成另一图案。将图案交换为硅光致抗蚀剂层以形成第二开口。将具有第一和第二开口的图案交换到层间电介质层和蚀刻停止层以形成接触孔。本发明具有两次曝光工艺和两次蚀刻工艺以形成具有小距离的接触孔。

34. 发明申请

US20120099382A1 READING MEMORY DATA 有权
标题翻译：读取存储器数据
公开(公告)号：US20120099382A1
公开(公告)日：2012-04-26
申请号：US12908670
申请日：2010-10-20
申请人： Jui-Jen WU , Shao-Yu CHOU
发明人： Jui-Jen WU , Shao-Yu CHOU
IPC分类号： G11C7/10 , G11C7/00
CPC分类号： G11C5/147 , G11C7/00 , G11C7/04 , G11C7/12 , G11C7/14 , G11C11/412 , G11C11/413
摘要： A circuit includes a reference data line configured to receive a reference voltage value, a memory cell, a data line coupled to the memory cell and configured to have a data logic value associated with data stored in the memory cell, a first circuit coupled to the reference data line and to the data line, and an output node configured to selectively receive the data logic value from the data line or receive the data logic value through the first circuit, based on the reference voltage value and a trip point used to trigger the first circuit to provide the data logic value through the first circuit.
摘要翻译：电路包括被配置为接收参考电压值的参考数据线，存储器单元，耦合到存储器单元的数据线，并被配置为具有与存储在存储单元中的数据相关联的数据逻辑值，第一电路耦合到参考数据线和数据线，以及输出节点，被配置为基于参考电压值和用于触发数据逻辑值的触发点，从数据线选择性地接收数据逻辑值或通过第一电路接收数据逻辑值第一电路通过第一电路提供数据逻辑值。

35. 发明授权

US08164141B2 Opening structure with sidewall of an opening covered with a dielectric thin film 有权
标题翻译：具有覆盖有介电薄膜的开口的侧壁的开口结构
公开(公告)号：US08164141B2
公开(公告)日：2012-04-24
申请号：US12884198
申请日：2010-09-17
申请人： Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
发明人： Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen , Feng-Yi Chang , Pei-Yu Chou , Jiunn-Hsiung Liao , Chih-Wen Feng , Ying-Chih Lin
IPC分类号： H01L29/78
CPC分类号： H01L21/31144 , H01L21/76802 , H01L21/76831 , H01L23/485
摘要： An opening structure includes a semiconductor substrate, at least one dielectric layer disposed on the semiconductor substrate, wherein the dielectric layer has a plurality of openings exposing the semiconductor substrate, and each of the openings has a sidewall, a dielectric thin film covering at least a portion of the sidewall of each of the openings, and a metal layer filled in the openings.
摘要翻译：开口结构包括半导体衬底，设置在半导体衬底上的至少一个电介质层，其中所述电介质层具有暴露所述半导体衬底的多个开口，并且每个所述开口具有侧壁，至少覆盖至少一个的电介质薄膜每个开口的侧壁的一部分，以及填充在开口中的金属层。

36. 发明授权

US08163267B1 Method of synthesizing magnesium-cobalt pentahydride 有权
标题翻译：合成五钴酸钴的方法
公开(公告)号：US08163267B1
公开(公告)日：2012-04-24
申请号：US13187517
申请日：2011-07-21
申请人： Sheng-Long Lee , Rong-Ruey Jeng , Che-Wei Hsu , Yu-Chou Tsai
发明人： Sheng-Long Lee , Rong-Ruey Jeng , Che-Wei Hsu , Yu-Chou Tsai
IPC分类号： C01B6/24 , C22C23/00 , C22C19/07
CPC分类号： C01B6/24 , C22C1/02 , C22C19/07 , C22C23/00 , Y10S420/90
摘要： In a method of synthesizing magnesium-cobalt pentahydride, a MgCo2 alloy is synthesized by completely reacting cobalt (Co) metal and excess magnesium (Mg) metal, followed by an isothermal evaporation casting process (IECP) for removing the residual magnesium metal. Then, the magnesium-cobalt alloy and another magnesium metal are ball-milled and hydrogenated to synthesize the magnesium-cobalt pentahydride (Mg2CoH5).
摘要翻译：在合成五 - 五硼酸镁的方法中，通过使钴（Co）金属和过量的镁（Mg）金属完全反应，然后通过等温蒸发铸造工艺（IECP）来除去残余的镁金属来合成MgCo 2合金。然后，将镁 - 钴合金和另一种镁金属进行球磨和氢化，合成五钴酸镁（Mg2CoH5）。

37. 发明申请

US20120092944A1 MEMORY DEVICE HAVING A CLOCK SKEW GENERATOR 有权
标题翻译：具有时钟发条器的存储器件
公开(公告)号：US20120092944A1
公开(公告)日：2012-04-19
申请号：US12968582
申请日：2010-12-15
申请人： Tzu-Kuei LIN , Hung-Jen LIAO , Shao-Yu CHOU , Ching-Wei WU
发明人： Tzu-Kuei LIN , Hung-Jen LIAO , Shao-Yu CHOU , Ching-Wei WU
IPC分类号： G11C7/22
CPC分类号： G11C7/222
摘要： A memory device is provided with memory components and a clock skew generator, supporting at least two read and write operations that can occur coincidentally in read-read, read-write and write-write modes of operation of the memory device. The clock skew generator produces at least two stable and balanced clock channels carrying the at least two clock signals and varies relative timing of the clock signal edges so as to displace the edges in time, in those modes of operation wherein simultaneous edges would lead to detrimental loading.
摘要翻译：存储器件具有存储器组件和时钟偏斜发生器，支持在存储器件的读取，读写和写入 - 写入操作模式中可能巧合地发生的至少两个读和写操作。时钟偏移发生器产生至少两个稳定和平衡的时钟通道，其承载至少两个时钟信号，并且改变时钟信号边沿的相对定时，从而在这些操作模式中随时移动边缘，其中同时的边缘将导致有害的加载。

38. 发明申请

US20120081776A1 2D/3D IMAGE SWITCHING DISPLAY DEVICE 失效
标题翻译： 2D / 3D图像切换显示设备
公开(公告)号：US20120081776A1
公开(公告)日：2012-04-05
申请号：US12962843
申请日：2010-12-08
申请人： YU-CHOU YEH , CHAO-YI WANG , TSUNG-HER YEH
发明人： YU-CHOU YEH , CHAO-YI WANG , TSUNG-HER YEH
IPC分类号： G02F1/153
CPC分类号： G02F1/13471 , G02B27/2214 , G02F1/1508 , G02F2201/44 , H04N13/302 , H04N13/324 , H04N13/356
摘要： A 2D/3D image switching display device includes an image display unit and an image switching unit coupled to a surface of the image display unit, and the image switching unit includes a first substrate, a second substrate, first and second conducting elements corresponding to the first and second substrates respectively, and an electrochromic unit installed between the first and second substrates, and the electrochromic unit includes a first electrochromic layer and a second electrochromic layer combined with each other, such that when the image display unit switches its display from the display of planar images to stereo images, the electrochromic layers turn to a dark light-shading condition for a better light-shielding effect, and moire patterns will not be produced after naked eyes receive left and right eye images of a stereo image, and the display device can display stereo images directly without requiring an additional parallax barrier device.
摘要翻译： 2D / 3D图像切换显示装置包括图像显示单元和耦合到图像显示单元的表面的图像切换单元，并且图像切换单元包括第一基板，第二基板，对应于图像显示单元的第一和第二导电元件第一和第二基板，以及安装在第一和第二基板之间的电致变色单元，并且电致变色单元包括彼此结合的第一电致变色层和第二电致变色层，使得当图像显示单元从显示器切换其显示时的平面图像到立体图像，电致变色层变成暗的遮光状态以获得更好的遮光效果，并且在裸眼接收立体图像的左眼和右眼图像之后不会产生莫尔图案，并且显示器设备可以直接显示立体图像，而不需要额外的视差屏障设备。

39. 发明申请

US20120081773A1 ELECTROCHROMIC UNIT AND STEREO IMAGE DISPLAY DEVICE HAVING THE SAME 审中-公开
标题翻译：电致发光单元和具有该电子单元的立体图像显示装置
公开(公告)号：US20120081773A1
公开(公告)日：2012-04-05
申请号：US12968504
申请日：2010-12-15
申请人： YU-CHOU YEH , CHAO-YI WANG , WEN-CHIH LO , CHI-HSIEN SUNG , TSUNG-HER YEH
发明人： YU-CHOU YEH , CHAO-YI WANG , WEN-CHIH LO , CHI-HSIEN SUNG , TSUNG-HER YEH
IPC分类号： G02F1/153
CPC分类号： G02F1/1525 , G02F2001/164
摘要： In an electrochromic module and a stereo image display device having the electrochromic module, the electrochromic module includes a first substrate, a second substrate, at least one electrochromic layer and at least one ion layer. The first substrate upper surface includes at least one first electrically conductive element disposed between the first substrate and the second substrate. The ion layer is formed on a surface of the electrochromic layer and prepared by mixing and dissolving at least one organic material and at least one inorganic material in a solvent. The ion layer not only serves as an ion provider, but also acts as an electrochromic material of an accessory color change layer for improving the difference of the optical transmittance. By the shifting and transmission of electrons between the organic and inorganic materials, the electrochromic module has the advantages of fast and uniform color change and smaller driving voltage.
摘要翻译：在具有电致变色模块的电致变色模块和立体图像显示装置中，电致变色组件包括第一衬底，第二衬底，至少一个电致变色层和至少一个离子层。第一衬底上表面包括设置在第一衬底和第二衬底之间的至少一个第一导电元件。离子层形成在电致变色层的表面上，并通过将至少一种有机材料和至少一种无机材料混合并溶解在溶剂中来制备。离子层不仅用作离子供体，而且还用作辅助颜色变化层的电致变色材料，以改善光透射率的差异。通过有机和无机材料之间电子的移动和传输，电致变色模块具有快速均匀的颜色变化和较小的驱动电压的优点。

40. 发明申请

US20120080752A1 HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR WITH STABLE THRESHOLD VOLTAGE AND RELATED MANUFACTURING METHOD 有权
标题翻译：具有稳定阈值电压的高压金属氧化物半导体晶体管及相关制造方法
公开(公告)号：US20120080752A1
公开(公告)日：2012-04-05
申请号：US12898668
申请日：2010-10-05
申请人： Chun-Yu Chou , Chien-Liang Tung , Chi-Wei Lin
发明人： Chun-Yu Chou , Chien-Liang Tung , Chi-Wei Lin
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/26586 , H01L29/6659 , H01L29/7833
摘要： A high voltage metal-oxide-semiconductor (HVMOS) transistor includes a gate poly, wherein a channel is formed in an area projected from the gate poly in a thickness direction when the HVMOS is activated; two carrier drain drift regions, adjacent to the area projected from the gate poly, wherein at least one of the carrier drain drift regions has a gradient doping concentration; and two carrier plus regions, respectively locate within the two carrier drain drift regions, wherein the two carrier plus regions and the two carrier drain drift regions are communicating with each other through the channel when the HVMOS is activated.
摘要翻译：高压金属氧化物半导体（HVMOS）晶体管包括栅极聚合物，其中当HVMOS被激活时，在厚度方向上从栅极poly突出的区域中形成沟道; 两个载波漏极漂移区，邻近从栅极poly投影的区域，其中至少一个载流子漂移区具有梯度掺杂浓度; 和两个载波加区域分别位于两个载波漏极漂移区域内，其中当HVMOS被激活时，两个载波加区域和两个载波漏极漂移区域通过信道彼此通信。

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