专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US06519020B1 Liquid crystal display module, using a flexible printed circuit board with enhanced thermocompression characteristics 有权
标题翻译：液晶显示模块，采用柔性印刷电路板，具有增强的热压特性
公开(公告)号：US06519020B1
公开(公告)日：2003-02-11
申请号：US09357884
申请日：1999-07-21
申请人： Ki-Seok Cha , Myung-Chul Kim , Won-Seok Lee
发明人： Ki-Seok Cha , Myung-Chul Kim , Won-Seok Lee
IPC分类号： G02F11345
CPC分类号： G02F1/13452 , H05K1/147
摘要： An LCD module uses a flexible printed circuit (FPC) instead of a gate or a source drive printed circuit board (PCB) so that size of area by which a tape carrier package (TCP) is thermocompression molded can be substantially decreased and thus reducing a difference in the degree of thermal expansion between PCB and TCP. As a result, a slim and lightweight LCD module can be obtained, and a misalignment or a warpage of TCP can be prevented.
摘要翻译： LCD模块使用柔性印刷电路（FPC）来代替栅极或源极驱动印刷电路板（PCB），从而能够大大减少带状载体封装（TCP）被热压成型的区域尺寸，从而减少 PCB和TCP之间的热膨胀程度的差异。结果，可以获得纤细和轻便的LCD模块，并且可以防止TCP的未对准或翘曲。

32. 发明申请

US20130274416A1 GRAFT MONOMER COMPOSITION FOR THERMOPLASTIC TRANSPARENT RESIN, COMPOSITION FOR THERMOPLASTIC TRANSPARENT RESIN USING THE SAME, AND THERMOPLASTIC TRANSPARENT RESIN HAVING GOOD TRANSPARENCY AND COLOR 有权
标题翻译：用于热塑性透明树脂的热成型单体组合物，使用该热塑性透明树脂的热塑性透明树脂的组合物和具有良好透明度和颜色的热塑性透明树脂
公开(公告)号：US20130274416A1
公开(公告)日：2013-10-17
申请号：US13996462
申请日：2011-12-23
申请人： Jeong-Su Choi , Keun-Hoon Yoo , Hyong-Min Bahn , Won-Seok Lee , Seok-Goo Jang
发明人： Jeong-Su Choi , Keun-Hoon Yoo , Hyong-Min Bahn , Won-Seok Lee , Seok-Goo Jang
IPC分类号： C08F279/02 , C08L51/04
CPC分类号： C08F279/02 , C08L51/04 , C08L53/02 , C08L55/02 , C08L33/10 , C08F212/10 , C08F220/18 , C08F220/06 , C08F2220/286
摘要： Disclosed is a graft monomer composition for thermoplastic transparent resins, a composition for thermoplastic transparent resins using the same and a thermoplastic transparent resin that exhibits superior transparency and color at low rubber contents. According to the graft monomer composition, the composition for thermoplastic transparent resins and the thermoplastic transparent resin, although the content of rubber in final products increases or the content of rubber in graft copolymers in the preparation of final products increases, the copolymer surrounds the surface of rubber well, thus reducing haze, considerably improving transparency and exhibiting excellent natural color.
摘要翻译：公开了用于热塑性透明树脂的接枝单体组合物，使用该树脂的热塑性透明树脂的组合物和在低橡胶含量下表现出优异的透明度和颜色的热塑性透明树脂。根据接枝单体组合物，用于热塑性透明树脂的组合物和热塑性透明树脂，尽管最终产品中橡胶的含量增加或接枝共聚物中的橡胶含量在最终产物的制备中增加，但共聚物包围表面橡胶井，从而减少雾度，显着提高透明度并表现出优异的自然色。

33. 发明授权

US07889546B2 Phase-change random access memory device, system having the same, and associated methods 有权
标题翻译：相变随机存取存储器件，具有相同的系统和相关方法
公开(公告)号：US07889546B2
公开(公告)日：2011-02-15
申请号：US12285656
申请日：2008-10-10
申请人： Joon-min Park , Young-kug Moon , Won-seok Lee
发明人： Joon-min Park , Young-kug Moon , Won-seok Lee
IPC分类号： G11C11/00
CPC分类号： G11C7/08 , G11C7/18 , G11C13/0004 , G11C2213/72
摘要： A phase-change random access memory (PRAM) device includes a PRAM cell array including a first sector and a second sector, a first global bit line coupled to a first local bit line of the first sector and a first local bit line of the second sector, and a first plurality of global bit line discharge units coupled to the first global bit line, the first plurality of global bit line discharge units configured to discharge the first global bit line in response to a first global discharge signal.
摘要翻译：相变随机存取存储器（PRAM）装置包括包括第一扇区和第二扇区的PRAM单元阵列，耦合到第一扇区的第一局部位线的第一全局位线和第二扇区的第一局部位线扇区和耦合到第一全局位线的第一多个全局位线放电单元，第一多个全局位线放电单元被配置为响应于第一全局放电信号而放电第一全局位线。

34. 发明授权

US07817489B2 Power supplying circuit and phase-change random access memory including the same 有权
标题翻译：供电电路和包括相同的相变随机存取存储器
公开(公告)号：US07817489B2
公开(公告)日：2010-10-19
申请号：US12251761
申请日：2008-10-15
申请人： Beak-hyung Cho , Kwang-ho Kim , Won-seok Lee
发明人： Beak-hyung Cho , Kwang-ho Kim , Won-seok Lee
IPC分类号： G11C5/14
CPC分类号： G11C5/145 , G11C13/0004 , G11C13/0038
摘要： A power supplying circuit (PSC) and a phase-change random access memory (PRAM) including the PSC. According to an aspect of the invention, the PSC includes: a first voltage generator configured to output a first voltage to a first terminal; and a second voltage generator configured to output a second voltage to a second terminal, the second voltage generator including: a voltage pump unit configured to output the second voltage based on a clock signal and a pump control signal; a pump output detector coupled to the voltage pump unit, the pump output detector configured to output a pump output detection signal; and a discharging unit coupled to the voltage pump unit, the discharging unit configured to discharge a level of the second voltage to a predetermined level in response to a discharge signal. Embodiments of the invention may prevent write and/or read malfunctions that can occur due to changes in the level of a voltage supplied to PRAM cell blocks.
摘要翻译：供电电路（PSC）和包括PSC的相变随机存取存储器（PRAM）。根据本发明的一个方面，PSC包括：第一电压发生器，被配置为将第一电压输出到第一端子; 以及第二电压发生器，被配置为向第二端子输出第二电压，所述第二电压发生器包括：电压泵单元，被配置为基于时钟信号和泵控制信号输出所述第二电压; 耦合到所述电压泵单元的泵输出检测器，所述泵输出检测器被配置为输出泵输出检测信号; 以及耦合到所述电压泵单元的放电单元，所述放电单元被配置为响应于放电信号将所述第二电压的电平放电到预定电平。本发明的实施例可以防止由于提供给PRAM单元块的电压的电平的变化而可能发生的写入和/或读取故障。

35. 发明申请

US20090262015A1 MOBILE COMMUNICATION DEVICE POSITIONING SYSTEM AND METHOD FOR ENHANCING POSITION MEASUREMENT BY SELF LEARNING ALGORITHM 审中-公开
标题翻译：移动通信设备定位系统和通过自学习算法增强位置测量的方法
公开(公告)号：US20090262015A1
公开(公告)日：2009-10-22
申请号：US12089661
申请日：2006-09-15
申请人： Tae Il Kim , Tae Joon Ha , Hyuk Jin Sohn , Hyun Ok Park , Won Seok Lee
发明人： Tae Il Kim , Tae Joon Ha , Hyuk Jin Sohn , Hyun Ok Park , Won Seok Lee
IPC分类号： G01S1/00
CPC分类号： H04W64/00 , G01S5/0252
摘要： A method and system for determining a location of a mobile communication device for an improvement of a positioning through a self-learning processing algorithm. In the method and system for determining a location of a mobile communication device, a self-learning processing unit batch processes GPS-based positioning results accumulated in a first self-learning database, and generates a sector direction value. Also, the self-learning processing unit generates optimized environment parameters, which is necessary for wireless network-based positioning, and basic data for a pattern matching, and updates the optimized environment parameters and basic data in a second self-learning database. Accordingly, the system for determining a location of a mobile communication device performs a positioning through a pattern matching method by using results accumulated in the second self-learning database.
摘要翻译：一种用于通过自学习处理算法确定移动通信设备的位置以改善定位的方法和系统。在用于确定移动通信设备的位置的方法和系统中，自学习处理单元批量处理累积在第一自学习数据库中的基于GPS的定位结果，并且生成扇区方向值。此外，自学习处理单元生成对于无线网络定位所必需的优化环境参数和用于模式匹配的基本数据，并且在第二自学习数据库中更新优化的环境参数和基本数据。因此，用于确定移动通信设备的位置的系统通过使用累积在第二自学习数据库中的结果通过模式匹配方法执行定位。

36. 发明申请

US20090164723A1 Memory card 失效
标题翻译：存储卡
公开(公告)号：US20090164723A1
公开(公告)日：2009-06-25
申请号：US12314600
申请日：2008-12-12
申请人： Won-Seok Lee
发明人： Won-Seok Lee
IPC分类号： G06F12/02 , G06K19/00 , G06F12/00
CPC分类号： H01L25/18 , H01L23/49855 , H01L25/0655 , H01L2224/16 , H01L2224/16145 , H05K1/111 , H05K1/181 , H05K2201/10159 , H05K2201/10515 , Y02P70/611
摘要： The memory card includes a memory controller covered by a main body, a first non-volatile memory, a memory interface configured to transfer a signal between the memory controller and the first non-volatile memory, and a cover coupled to the main body and removeably covering the first memory and the memory interface. Here, the memory interface includes a connection detector configured to generate a connection detector signal when sensing that a package including a second non-volatile memory is added.
摘要翻译：存储卡包括由主体覆盖的存储器控制器，第一非易失性存储器，被配置为在存储器控制器和第一非易失性存储器之间传送信号的存储器接口以及耦合到主体并可移除的盖子涵盖了第一个内存和内存接口。这里，存储器接口包括连接检测器，其被配置为当感测到包括第二非易失性存储器的包装被添加时产生连接检测器信号。

37. 发明申请

US20090164722A1 Memory card and memory storage device using the same 失效
标题翻译：存储卡和存储设备使用相同
公开(公告)号：US20090164722A1
公开(公告)日：2009-06-25
申请号：US12314320
申请日：2008-12-08
申请人： Won-Seok Lee , Jong-Keun Ahn
发明人： Won-Seok Lee , Jong-Keun Ahn
IPC分类号： G06F12/00 , G06F13/00
CPC分类号： G06F13/387 , G06F12/06 , Y02D10/13 , Y02D10/14 , Y02D10/151
摘要： A memory card and a memory storage device using the memory card may be provided. The memory card may include a host connector, a memory controller connected to the host connector and enabled or disabled in response to a capacity expansion signal, a non-volatile memory connected to the memory controller, a memory connector configured to connect to the memory controller and the non-volatile memory, and a capacity expansion switch configured to generate the capacity expansion signal. Accordingly, when the memory cards are connected to increase storage capacity, only a memory controller of one memory card may operate, thereby reducing power consumption.
摘要翻译：可以提供使用存储卡的存储卡和存储器存储装置。存储卡可以包括主机连接器，连接到主机连接器并且响应于容量扩展信号而被启用或禁用的存储器控制器，连接到存储器控制器的非易失性存储器，被配置为连接到存储器控制器的存储器连接器和非易失性存储器，以及容量扩展开关，其被配置为生成容量扩展信号。因此，当存储卡被连接以增加存储容量时，只有一个存储卡的存储器控制器可以操作，从而降低功耗。

38. 发明申请

US20090122601A1 POWER SUPPLYING CIRCUIT AND PHASE-CHANGE RANDOM ACCESS MEMORY INCLUDING THE SAME 有权
标题翻译：电源电路和相位变化随机存取存储器
公开(公告)号：US20090122601A1
公开(公告)日：2009-05-14
申请号：US12251761
申请日：2008-10-15
申请人： Beak-hyung CHO , Kwang-ho KIM , Won-seok LEE
发明人： Beak-hyung CHO , Kwang-ho KIM , Won-seok LEE
IPC分类号： G11C11/00 , G11C7/00 , G11C8/00 , G11C5/14
CPC分类号： G11C5/145 , G11C13/0004 , G11C13/0038
摘要： Embodiments of the invention provide a power supplying circuit (PSC) and a phase-change random access memory (PRAM) including the PSC. According to an aspect of the invention, the PSC includes: a first voltage generator configured to output a first voltage to a first terminal; and a second voltage generator configured to output a second voltage to a second terminal, the second voltage generator including: a voltage pump unit configured to output the second voltage based on a clock signal and a pump control signal; a pump output detector coupled to the voltage pump unit, the pump output detector configured to output a pump output detection signal; and a discharging unit coupled to the voltage pump unit, the discharging unit configured to discharge a level of the second voltage to a predetermined level in response to a discharge signal. Embodiments of the invention may prevent write and/or read malfunctions that can occur due to changes in the level of a voltage supplied to PRAM cell blocks.
摘要翻译：本发明的实施例提供了一种包括PSC的供电电路（PSC）和相变随机存取存储器（PRAM）。根据本发明的一个方面，PSC包括：第一电压发生器，被配置为将第一电压输出到第一端子; 以及第二电压发生器，被配置为向第二端子输出第二电压，所述第二电压发生器包括：电压泵单元，被配置为基于时钟信号和泵控制信号输出所述第二电压; 耦合到所述电压泵单元的泵输出检测器，所述泵输出检测器被配置为输出泵输出检测信号; 以及耦合到所述电压泵单元的放电单元，所述放电单元被配置为响应于放电信号将所述第二电压的电平放电到预定电平。本发明的实施例可以防止由于提供给PRAM单元块的电压的电平的变化而可能发生的写入和/或读取故障。

39. 发明申请

US20090097306A1 Phase-change random access memory device, system having the same, and associated methods 有权
标题翻译：相变随机存取存储器件，具有相同的系统和相关方法
公开(公告)号：US20090097306A1
公开(公告)日：2009-04-16
申请号：US12285656
申请日：2008-10-10
申请人： Joon-min Park , Young-kug Moon , Won-seok Lee
发明人： Joon-min Park , Young-kug Moon , Won-seok Lee
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C7/08 , G11C7/18 , G11C13/0004 , G11C2213/72
摘要： A phase-change random access memory (PRAM) device includes a PRAM cell array including a first sector and a second sector, a first global bit line coupled to a first local bit line of the first sector and a first local bit line of the second sector, and a first plurality of global bit line discharge units coupled to the first global bit line, the first plurality of global bit line discharge units configured to discharge the first global bit line in response to a first global discharge signal.
摘要翻译：相变随机存取存储器（PRAM）装置包括包括第一扇区和第二扇区的PRAM单元阵列，耦合到第一扇区的第一局部位线的第一全局位线和第二扇区的第一局部位线扇区和耦合到第一全局位线的第一多个全局位线放电单元，第一多个全局位线放电单元被配置为响应于第一全局放电信号而放电第一全局位线。

40. 发明申请

US20080109700A1 SEMICONDUCTOR MEMORY DEVICE AND DATA ERROR DETECTION AND CORRECTION METHOD OF THE SAME 失效
标题翻译：半导体存储器件及其数据错误检测及校正方法
公开(公告)号：US20080109700A1
公开(公告)日：2008-05-08
申请号：US11773214
申请日：2007-07-03
申请人： Kwang-Jin Lee , Won-Seok Lee , Du-Eung Kim
发明人： Kwang-Jin Lee , Won-Seok Lee , Du-Eung Kim
IPC分类号： G06F11/10
CPC分类号： G06F11/1008 , G06F11/1076 , G11C8/04 , G11C8/12
摘要： A semiconductor memory device includes a memory cell array, a mode setting circuit, a parity data generation unit, and a data error detection and correction unit. The memory cell array has a plurality of first memory banks for storing normal data, and a predetermined number of second memory banks less than the number of the first memory banks for storing parity data according to control of a first flag signal. The mode setting circuit sets the first flag signal and a second flag signal controlling based on whether a separate memory bank is used to store the parity data in the second memory banks. The parity data generation unit receives normal write data during a write operation, generates parity data with respect to the normal write data in response to the second flag signal, and outputs the normal data and the parity data. The data error detection and correction unit receives normal read data and parity read data read from the memory cell array during a read operation, detects errors of the normal read data in response to the second flag signal, corrects the normal read data when the errors are detected, and outputs the corrected read data.
摘要翻译：半导体存储器件包括存储单元阵列，模式设置电路，奇偶校验数据生成单元和数据错误检测和校正单元。存储单元阵列具有用于存储正常数据的多个第一存储体和小于根据第一标志信号的控制存储奇偶校验数据的第一存储体的数量的预定数量的第二存储体。模式设置电路基于是否使用单独的存储体来存储第二存储体中的奇偶校验数据来设置第一标志信号和第二标志信号。奇偶校验数据生成单元在写入操作期间接收正常写入数据，响应于第二标志信号生成相对于正常写入数据的奇偶校验数据，并输出正常数据和奇偶校验数据。数据错误检测和校正单元在读取操作期间接收从存储单元阵列读取的正常读取数据和奇偶校验读取数据，响应于第二标志信号检测正常读取数据的错误，当错误为检测并输出校正的读取数据。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式