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31. 发明授权

US08211724B2 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same 有权
标题翻译：具有多个非极性发光单元的发光器件及其制造方法
公开(公告)号：US08211724B2
公开(公告)日：2012-07-03
申请号：US12623990
申请日：2009-11-23
申请人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

32. 发明授权

US08188489B2 Light emitting diode for AC operation 有权
公开(公告)号：US08188489B2
公开(公告)日：2012-05-29
申请号：US12607506
申请日：2009-10-28
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

33. 发明申请

US20120074441A1 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：水平发光二极管封装及其制造方法
公开(公告)号：US20120074441A1
公开(公告)日：2012-03-29
申请号：US13194317
申请日：2011-07-29
申请人： Won Cheol SEO , Dae Sung KAL
发明人： Won Cheol SEO , Dae Sung KAL
IPC分类号： H01L33/50 , H01L27/15 , H01L33/38 , H01L33/58
CPC分类号： H01L33/56 , H01L27/15 , H01L27/153 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/58 , H01L33/62 , H01L33/642 , H01L33/647 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0075 , H01L2924/00
摘要： Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
摘要翻译：本发明的示例性实施例提供一种晶片级发光二极管（LED）封装及其制造方法。 LED封装包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的半导体堆叠; 布置在所述第二导电类型半导体层和所述有源层中的多个接触孔，所述接触孔暴露所述第一导电类型半导体层; 布置在所述半导体堆叠的第一侧上的第一凸块，所述第一凸块经由所述多个接触孔电连接到所述第一导电类型半导体层; 布置在所述半导体堆叠的第一侧上的第二凸块，所述第二凸块电连接到所述第二导电型半导体层; 以及覆盖半导体叠层的侧壁的保护绝缘层。

34. 发明申请

US20110180820A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
公开(公告)号：US20110180820A1
公开(公告)日：2011-07-28
申请号：US13077395
申请日：2011-03-31
申请人： Won Cheol SEO , Sum Geun LEE
发明人： Won Cheol SEO , Sum Geun LEE
IPC分类号： H01L33/08 , H01L33/46
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2224/73265 , H01L2224/92247
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

35. 发明申请

US20110175131A1 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110175131A1
公开(公告)日：2011-07-21
申请号：US13076330
申请日：2011-03-30
申请人： Won Cheol SEO , Yun Goo KIM , Chang Youn KIM
发明人： Won Cheol SEO , Yun Goo KIM , Chang Youn KIM
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.
摘要翻译：提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

36. 发明申请

US20110169040A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110169040A1
公开(公告)日：2011-07-14
申请号：US13073794
申请日：2011-03-28
申请人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
发明人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

37. 发明申请

US20110156064A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110156064A1
公开(公告)日：2011-06-30
申请号：US12950676
申请日：2010-11-19
申请人： Won Cheol SEO , Sum Geun LEE
发明人： Won Cheol SEO , Sum Geun LEE
IPC分类号： H01L33/46
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2224/73265 , H01L2224/92247
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.
摘要翻译：公开了发光器件及其制造方法。发光装置包括：基板; 第一和第二发光单元，每个包括第一半导体层，有源层和第二半导体层; 以及位于第一和第二发光单元和基板之间的连接器，以将第一和第二发光单元彼此电连接。连接器从第一发光单元的第二半导体层延伸穿过衬底，并且穿过第二半导体层的中心区域和第二发光单元的有源层，以与第二发光单元的第一半导体层接触。

38. 发明申请

US20100289040A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20100289040A1
公开(公告)日：2010-11-18
申请号：US12811047
申请日：2008-12-24
申请人： Won Cheol Seo , Chang Youn Kim , Yeo Jin Yoon
发明人： Won Cheol Seo , Chang Youn Kim , Yeo Jin Yoon
IPC分类号： H01L33/10 , H01L33/60 , H01L33/48 , H01L33/62 , H01L21/78
CPC分类号： H01L33/0079 , H01L25/0753 , H01L27/153 , H01L33/46 , H01L33/641 , H01L2224/49107
摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.
摘要翻译：这里公开了一种发光二极管。发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

39. 发明申请

US20100244727A1 LIGHT-EMITTING DIODE DRIVER 有权
标题翻译：发光二极管驱动器
公开(公告)号：US20100244727A1
公开(公告)日：2010-09-30
申请号：US12704881
申请日：2010-02-12
申请人： Kyung Hee YE , Hyun Gu Kang , Dae Sung Kal , Won Cheol Seo
发明人： Kyung Hee YE , Hyun Gu Kang , Dae Sung Kal , Won Cheol Seo
IPC分类号： H05B37/02
CPC分类号： H05B33/0809
摘要： A light-emitting diode (LED) driver used to power at least one LED with an alternating current (AC) voltage source is provided. The LED driver includes a rectifying unit applying N-fold higher voltage than the voltage from the AC voltage source to the LED. The rectifying unit includes a first charging unit to charge a first voltage, and a second charging unit to charge a second voltage. The first voltage includes the voltage at the AC voltage source during a first half-cycle of one AC voltage cycle, and the second voltage includes the first voltage and the voltage at the AC voltage source during the second half-cycle of the AC voltage cycle. Accordingly, the LED driver may improve light-emitting efficiency and reduce flicker of LEDs.
摘要翻译：提供了用于为交流（AC）电压源至少一个LED供电的发光二极管（LED）驱动器。 LED驱动器包括整流单元，其施加比来自AC电压源的电压高出N倍的电压。整流单元包括对第一电压充电的第一充电单元和用于对第二电压充电的第二充电单元。第一电压包括在一个交流电压周期的第一个半周期期间的交流电压源处的电压，并且第二电压在交流电压周期的第二个半周期期间包括第一电压和交流电压源处的电压。因此，LED驱动器可以提高发光效率并减少LED的闪烁。

40. 发明申请

US20100163887A1 LIGHT EMITTING DEVICE HAVING A PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND A METHOD OF FABRICATING THE SAME 有权
标题翻译：具有多个非极性发光电池的发光装置及其制造方法
公开(公告)号：US20100163887A1
公开(公告)日：2010-07-01
申请号：US12623990
申请日：2009-11-23
申请人： Kwang Choong KIM , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Kwang Choong KIM , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

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