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31. 发明申请

US20070296843A1 Solid-state imaging device and camera 审中-公开
标题翻译：固态成像装置和相机
公开(公告)号：US20070296843A1
公开(公告)日：2007-12-27
申请号：US11808297
申请日：2007-06-08
申请人： Shigetaka Kasuga , Katsumi Takeda , Takumi Yamaguchi , Yoshiyuki Matsunaga , Takahiko Murata , Takayoshi Yamada
发明人： Shigetaka Kasuga , Katsumi Takeda , Takumi Yamaguchi , Yoshiyuki Matsunaga , Takahiko Murata , Takayoshi Yamada
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14603 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627
摘要： A solid-state imaging device includes a plurality of pixels arranged two-dimensionally. Each pixel includes a photoelectric converter (2) for converting incident light to a charge, and a gray filter (6a, 6b, 6c) having a visible light transmittance that is different depending on the photoelectric converter (2). According to this construction, the plurality of pixels have different sensitivities to incident light. By combining pixel signals obtained from three pixels having different sensitivities, a wider dynamic range can be achieved.
摘要翻译：固态成像装置包括二维排列的多个像素。每个像素包括用于将入射光转换成电荷的光电转换器（2）和具有根据光电转换器（2）不同的可见光透射率的灰色滤光器（6a，6b，6c）。根据该结构，多个像素对入射光具有不同的灵敏度。通过组合从具有不同灵敏度的三个像素获得的像素信号，可以实现更宽的动态范围。

32. 发明申请

US20070109433A1 SOLID-STATE IMAGING DEVICE FOR HIGH-SPEED PHOTOGRAPHY 有权
标题翻译：用于高速摄影的固态成像装置
公开(公告)号：US20070109433A1
公开(公告)日：2007-05-17
申请号：US11558670
申请日：2006-11-10
申请人： Takayoshi Yamada , Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
发明人： Takayoshi Yamada , Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H04N5/232 , H04N5/374 , H04N5/37452
摘要： A solid-state imaging device for high-speed photography includes an imaging element area in which a plurality of pixel portions having photodetectors for photography are disposed in a matrix form. The solid-state imaging device generates image data by capturing pixel information obtained from the photodetectors for photography. The solid-state imaging device for high-speed photography further includes: a change detection element that detects a change in an amount of incident light, which is disposed in the imaging element area or at a predetermined position surrounding the imaging element area; and a controller that controls starting or stopping of capturing of pixel information obtained from the photodetectors for photography in accordance with a trigger signal based on a detection signal output from the change detection element. Since the photographing can be started in accordance with the generation of a phenomenon, the phenomenon can be recorded with reliability, and an excellent power-saving capability also can be provided.
摘要翻译：用于高速摄影的固态成像装置包括其中具有用于摄影的光电检测器的多个像素部分以矩阵形式布置的成像元件区域。固态成像装置通过捕获从用于摄影的光电检测器获得的像素信息来生成图像数据。用于高速摄影的固态成像装置还包括：变化检测元件，其检测设置在成像元件区域或围绕成像元件区域的预定位置处的入射光量的变化; 以及控制器，其基于从变化检测元件输出的检测信号，根据触发信号，控制从用于摄影的光电检测器获得的像素信息的拍摄的开始或停止。由于可以根据现象的产生开始拍摄，因此可以可靠地记录现象，并且还可以提供优异的节电能力。

33. 发明申请

US20070012968A1 Solid-state imaging device and camera 审中-公开
公开(公告)号：US20070012968A1
公开(公告)日：2007-01-18
申请号：US11523578
申请日：2006-09-20
申请人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
发明人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： A solid-state imaging device is formed on a silicon substrate for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device includes, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of a first conductivity type, a transistor and a device isolation region whose depth is less than a depth of the charge accumulation region of the first conductivity type, at which an impurity density is at maximum.

34. 发明申请

US20060291056A1 Solid-state imaging device 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20060291056A1
公开(公告)日：2006-12-28
申请号：US11471705
申请日：2006-06-21
申请人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga
发明人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga
IPC分类号： G02B5/30
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14641
摘要： By making an aperture 13a to which light of an R (Red) component enters larger than other apertures (apertures 12a, 14a, and 15a), an attenuation ratio of light of the R component can be reduced when compared with the case where each aperture has a same size. Therefore, deterioration in sensitivity to the light of the R component can be suppressed, and deterioration in image quality can be reduced.
摘要翻译：通过制造R（红色）分量的光进入其它孔径（孔径12a，14a和15a）的光圈13a，当与R（红色）成分相比，R成分的光的衰减比可以减小每个孔径具有相同尺寸的情况。因此，可以抑制对R成分的光的敏感性的降低，并且可以降低图像质量的劣化。

35. 发明申请

US20060102827A1 Solid-state imaging device 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20060102827A1
公开(公告)日：2006-05-18
申请号：US11272895
申请日：2005-11-15
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata
IPC分类号： H01L27/00
CPC分类号： H04N5/374 , H01L27/14609 , H01L27/14643 , H04N5/35509 , H04N5/35554 , H04N5/3575
摘要： Provided is a solid-state imaging device which can obtain an output characteristic without preventing linearity even in a high light-intensity range, and at the same time achieve a much wider dynamic range. The solid-state imaging device 1 includes: a photo-detecting element (a photoelectric transducer PD) for transducing incident light to electric charges and accumulate the electric charges; an accumulation element (a floating de-fusion FD) for accumulating the electric charges; and a transfer circuit (a MOS transistor Q11 and a pulse generating circuit 50a) for transferring the electric charges accumulated in the photo-detecting element to the accumulation element, wherein the transfer circuit has two operation modes as follows: a whole transfer for transferring almost all of the accumulated electric charges to the accumulation element; and a partial transfer for transferring only a part of the accumulated electric charges which exceeds a predetermined amount to the accumulation element.
摘要翻译：提供了即使在高的光强度范围也可以获得输出特性而不防止线性，同时实现更宽的动态范围的固态成像装置。固态成像装置1包括：用于将入射光转换成电荷并积累电荷的光检测元件（光电变换器PD）用于累积电荷的累积元件（浮动解耦FD）; 以及用于将累积在光检测元件中的电荷转移到累积元件的转移电路（MOS晶体管Q 11和脉冲发生电路50a），其中传输电路具有如下两种操作模式：将几乎所有累积的电荷转移到积聚元件; 以及仅将一部分超过预定量的累积电荷传送到累积元件的部分传送。

36. 发明授权

US06870401B1 Signal transmission circuit 失效
标题翻译：信号传输电路
公开(公告)号：US06870401B1
公开(公告)日：2005-03-22
申请号：US10902095
申请日：2004-07-30
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata
IPC分类号： G09G3/36 , G11C19/18 , G11C19/28 , H04N5/335 , H03K19/094
CPC分类号： G09G3/3677 , G09G2310/0286 , G11C19/184 , G11C19/28
摘要： The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.
摘要翻译：提供信号传输电路，所述信号传输电路即使具有低电压和快速操作的源功率也能够稳定地工作。信号传输电路包括多个电路，其中根据驱动脉冲的脉冲电压被依次输出。每级的电路包括：输出晶体管T12，用于根据驱动脉冲将脉冲电压输出到源; 所述自举电容器C1连接在所述输出晶体管的栅极和源极之间; 用于对自举电容器充电的第一充电晶体管T11; 用于放电自举电容器的电荷的第一和第二放电晶体管T13和T14; 和逻辑电路（i）根据其他级的每个电路的驱动脉冲导通第一和第二放电晶体管，以及（ii）根据栅极信号关断第一和第二放电晶体管的充电晶体管。

37. 发明申请

US20050046445A1 SIGNAL TRANSMISSION CIRCUIT 失效
标题翻译：信号传输电路
公开(公告)号：US20050046445A1
公开(公告)日：2005-03-03
申请号：US10902095
申请日：2004-07-30
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata
IPC分类号： G09G3/36 , G11C19/18 , G11C19/28 , H04N5/335 , H03K19/094
CPC分类号： G09G3/3677 , G09G2310/0286 , G11C19/184 , G11C19/28
摘要： The signal transmission circuit is provided, said signal transmission circuit being capable of stable operations even with a source power of low voltage and a fast operation. The signal transmission circuit comprises plural stages of circuit in each of which the pulse voltage according to the driving pulse is sequentially outputted. The circuit of each stage includes: the output transistor T12 for outputting the pulse voltage to the source, according to the driving pulse; the bootstrap capacitor C1 connected between the gate and the source of the output transistor; the first charging transistor T11 for charging the bootstrap capacitor; the first and the second discharging transistor T13 and T14 for discharging the electric charge of the bootstrap capacitor; and the logical circuit which (i) turns on the first and the second discharging transistor, according to the driving pulse for each circuit of the other stages, and (ii) turns off the first and the second discharging transistor, according to the gate signal of the charging transistor.
摘要翻译：提供信号传输电路，所述信号传输电路即使具有低电压和快速操作的源功率也能够稳定地工作。信号传输电路包括多个电路，其中根据驱动脉冲的脉冲电压被依次输出。每级的电路包括：输出晶体管T12，用于根据驱动脉冲将脉冲电压输出到源; 所述自举电容器C1连接在所述输出晶体管的栅极和源极之间; 用于对自举电容器充电的第一充电晶体管T11; 用于放电自举电容器的电荷的第一和第二放电晶体管T13和T14; 和逻辑电路（i）根据其他级的每个电路的驱动脉冲导通第一和第二放电晶体管，以及（ii）根据栅极信号关断第一和第二放电晶体管的充电晶体管。

38. 发明申请

US20050045925A1 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US20050045925A1
公开(公告)日：2005-03-03
申请号：US10930814
申请日：2004-09-01
申请人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
发明人： Shinji Yoshida , Mitsuyoshi Mori , Takumi Yamaguchi
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L21/8238 , H01L27/148
CPC分类号： H01L27/14601 , H01L27/14609 , H01L27/1463
摘要： The present invention is a solid-state imaging device formed on a silicon substrate 1 for providing a MOS type solid-state imaging device which has a device isolation structure and causes a small amount of leak current. The solid-state imaging device comprises, for each pixel, an imaging region which includes a photodiode having a charge accumulation region of the first conductivity type, a transistor and a device isolation region whose depth is less than the depth of the charge accumulation region of the first conductivity type, at which the impurity density is at maximum.
摘要翻译：本发明是形成在硅基板1上的固态成像装置，用于提供具有器件隔离结构并导致少量泄漏电流的MOS型固态成像器件。该固态成像装置包括针对每个像素的成像区域，该成像区域包括具有第一导电类型的电荷累积区域的光电二极管，晶体管和器件隔离区域，其深度小于电荷累积区域的深度杂质密度最大的第一导电类型。

39. 发明授权

US06548879B2 Semiconductor device having heat detecting element and insulating cavity and method of manufacturing the same 有权
标题翻译：具有热检测元件和绝缘腔的半导体器件及其制造方法
公开(公告)号：US06548879B2
公开(公告)日：2003-04-15
申请号：US09896810
申请日：2001-06-29
申请人： Hiroyoshi Komobuchi , Yoshikazu Chatani , Takahiro Yamada , Rieko Nishio , Hiroaki Uozumi , Masayuki Masuyama , Takumi Yamaguchi
发明人： Hiroyoshi Komobuchi , Yoshikazu Chatani , Takahiro Yamada , Rieko Nishio , Hiroaki Uozumi , Masayuki Masuyama , Takumi Yamaguchi
IPC分类号： H01L2714
CPC分类号： G01J5/10 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.
摘要翻译：本发明提供一种包括硅衬底的半导体器件; 包括氧化硅膜的绝热层; 以及热检测部，其中所述绝热层包括封闭空腔和/或孔，所述孔的内部具有比所述孔的开口大的直径，并且所述封闭空腔或所述孔的至少一部分形成在氧化硅膜内。本发明还提供一种制造该半导体器件的方法。

40. 发明授权

US08134191B2 Solid-state imaging device, signal processing method, and camera 有权
标题翻译：固态成像装置，信号处理方法和相机
公开(公告)号：US08134191B2
公开(公告)日：2012-03-13
申请号：US12160291
申请日：2006-07-11
申请人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
发明人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
IPC分类号： H01L31/09
CPC分类号： H04N9/045 , H04N5/33 , H04N5/332
摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.
摘要翻译：一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的，交替地排列在行方向和列方向上。此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光，蓝光和红外灯。

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