专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20050066264A1 Manual preparation support method, program and storage medium 审中-公开
标题翻译：手动准备支持方式，程序和存储介质
公开(公告)号：US20050066264A1
公开(公告)日：2005-03-24
申请号：US10911628
申请日：2004-08-05
申请人： Tadashi Ohashi , Yukiharu Hashiguchi
发明人： Tadashi Ohashi , Yukiharu Hashiguchi
IPC分类号： G06Q10/00 , G06F17/00
CPC分类号： G06Q10/06 , G06Q10/10
摘要： A process simulation step supports manual artwork development planning for manual artwork development through simulation of processes from manual preparation request to delivery based on information entered by the requesting side. A preparation request step transmits a manual preparation request prepared by the requesting side to the developing side. A process management step accepts the preparation request, acquires an assigned number, and provides the progress status of processes from draft forwarding to artwork development and bookbinding in a visible manner on the developing side. An artwork development step prepares artwork by way of receipt of draft from the requesting side, and editing, proofreading and technical check on the developing and requesting sides. A bookbinding/distribution step handles manual bookbinding and/or recording to an electronified medium based on the prepared artwork.
摘要翻译：过程模拟步骤通过从根据请求方输入的信息的手动准备请求到交付的过程的仿真来支持手动图稿开发的手动图稿开发计划。准备请求步骤将请求方准备的手动准备请求发送到开发方。过程管理步骤接受准备请求，获取分配的号码，并且在开发方面以可见的方式将进程的进度状态从草稿转发到艺术品开发和装订。艺术品发展步骤通过从请求方接收草稿，以及对开发和请求方的编辑，校对和技术检查来准备艺术作品。装订/分发步骤基于准备的图稿处理手动装订和/或记录到电子化介质。

32. 发明授权

US06796486B2 Document review apparatus, a document review system, and a computer product 失效
标题翻译：文件审查装置，文件审查制度和计算机产品
公开(公告)号：US06796486B2
公开(公告)日：2004-09-28
申请号：US09782084
申请日：2001-02-14
申请人： Tadashi Ohashi
发明人： Tadashi Ohashi
IPC分类号： G06F1700
CPC分类号： G06F17/277 , G06Q10/10
摘要： Disclosed is a document review apparatus which efficiently carries out document review by using a network. A document review apparatus comprises a memory unit which stores a reviewed form comprising a written document, contents thereof to be reviewed by a plurality of reviewers. The document review apparatus receives a response, comprising information holding a review result of the reviewed form from another apparatus, and stores it in the memory unit; when a predetermined number of responses have been stored, the document review apparatus creates statistical data relating to the contents of the responses, and displays the created statistical data in order to assist a user (the creator of the reviewed form) in revising the reviewed form.
摘要翻译：公开了一种通过使用网络有效地执行文件审查的文件审查装置。文件审查装置包括存储单元，该存储单元存储包括书面文件的审查表单，其内容将被多个审阅者审查。文件审查装置接收响应，其包括保存来自另一装置的审阅表单的审阅结果的信息，并将其存储在存储单元中; 当已经存储了预定数量的响应时，文档审查装置创建与响应的内容相关的统计数据，并且显示所创建的统计数据，以帮助用户（经审查的表单的创建者）修改所审查的表单。

33. 发明授权

US06485573B2 Apparatus for reduced-pressure epitaxial growth and method of controlling the apparatus 有权
标题翻译：减压外延生长装置及其控制方法
公开(公告)号：US06485573B2
公开(公告)日：2002-11-26
申请号：US09855654
申请日：2001-05-16
申请人： Katsuyuki Iwata , Tadashi Ohashi , Shyuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
发明人： Katsuyuki Iwata , Tadashi Ohashi , Shyuji Tobashi , Shinichi Mitani , Hideki Arai , Hideki Ito
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/45557 , C23C16/4584 , C23C16/52 , C30B25/12 , C30B25/14
摘要： An apparatus for reduced-pressure gaseous phase epitaxial growth by suppressing contamination upon the machine parts constituting the rotary mechanical portion and suppressing contamination upon the semiconductor wafer by maintaining the pressure in the rotary mechanical portion to lie within a particular range, and a method of controlling the above apparatus. The apparatus comprises a purging gas introduction pipe 6 for purging the interior of the rotary mechanical portion, a purging gas exhaust pipe 7 for exhausting the gas introduced through the purging gas introduction pipe, a pressure adjusting valve 41 provided in the purging gas exhaust pipe, a pressure gauge 21 for detecting the pressure in the rotary mechanical portion, and an arithmetic/control unit 31 for executing an arithmetic operation based upon the detected pressure and for controlling the opening degree of the pressure adjusting valve 41 provided in the purging gas exhaust pipe, so that the pressure in the rotary mechanical portion assumes a proper value.
摘要翻译：一种通过抑制构成旋转机械部分的机器部件上的污染并通过将旋转机械部分中的压力维持在特定范围内来抑制半导体晶片上的污染物的减压气相外延生长装置，以及控制方法上述装置。该装置包括用于清洗旋转机械部分内部的净化气体引入管6，用于排出通过吹扫气体导入管引入的气体的净化气体排出管7，设置在净化气体排出管中的压力调节阀41，用于检测旋转机械部分中的压力的压力计21以及用于基于检测到的压力执行算术运算并且用于控制设置在净化气体排出管中的压力调节阀41的开度的运算/控制单元31 ，使得旋转机械部分中的压力呈现适当的值。

34. 发明授权

US6113705A High-speed rotational vapor deposition apparatus and high-speed rotational vapor deposition thin film method 有权
标题翻译：高速旋转蒸镀装置和高速旋转蒸镀薄膜法
公开(公告)号：US6113705A
公开(公告)日：2000-09-05
申请号：US137298
申请日：1998-08-20
申请人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda , Yuusuke Sato
发明人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda , Yuusuke Sato
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/455 , C23C16/4584
摘要： There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.
摘要翻译：提供了一种用于形成薄膜的气相沉积装置，该薄膜在中空反应器的顶部包括多个反应气体供给口，反应器底部的排气口，设置在反应器内部的旋转基板保持器，衬底安装。在反应器的上部设置有形成有多个气孔的矫直叶片。反应器被分隔成具有不同内径的上部和下部，上部的内径小于下部的内径。上部的下端和下部的上端通过具有预定形状的连接部连接以使反应器的中空内部连续。通过将反应气体供应到反应器中，在放置在旋转基板保持器上的晶片基板的表面上形成薄膜。

35. 发明授权

US6059885A Vapor deposition apparatus and method for forming thin film 失效
标题翻译：蒸镀装置及薄膜形成方法
公开(公告)号：US6059885A
公开(公告)日：2000-05-09
申请号：US991407
申请日：1997-12-16
申请人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda
发明人： Tadashi Ohashi , Katuhiro Chaki , Ping Xin , Tatsuo Fujii , Katsuyuki Iwata , Shinichi Mitani , Takaaki Honda
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/4401 , C23C16/4412 , C23C16/45502 , C23C16/45519 , C23C16/45565 , C23C16/45576 , C23C16/4584 , C30B25/14
摘要： A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion. A link portion connects the lower end of the upper portion and the upper end of the lower portion. The link portion is provided with straightening gas flow-out holes. The rotational substrate holder is positioned below the lower end of the upper portion of the reactor by a predetermined height difference.
摘要翻译：蒸镀装置包括：圆筒状中空反应器，其上部具有气体供给口，底部具有排气口。旋转衬底保持器，其位于晶片衬底上，同心地放置在反应器内。反应器具有矫直叶片，其具有同心地位于其上部的气孔。将反应气体供给到反应器中，通过气相沉积在旋转基板保持器上的晶片基板的表面上形成薄膜。在一个实施例中，矫直叶片被构造成使得覆盖晶片基板的区域的中心部分中的反应气体的流量和中心部分的外部中的反应气体的气体流量各自不同其他。在另一个实施方案中，反应器被分成上部和下部。上部的内径小于下部的内径。连接部分连接上部的下端和下部的上端。连杆部设有矫直气体流出孔。旋转衬底保持器定位在反应器的上部的下端下方预定的高度差。

36. 发明授权

US5868850A Vapor phase growth apparatus 失效
标题翻译：气相生长装置
公开(公告)号：US5868850A
公开(公告)日：1999-02-09
申请号：US659498
申请日：1996-06-06
申请人： Masahiko Ichishima , Eiichi Toya , Tadashi Ohashi , Masaki Shimada , Shinichi Mitani , Takaaki Honda
发明人： Masahiko Ichishima , Eiichi Toya , Tadashi Ohashi , Masaki Shimada , Shinichi Mitani , Takaaki Honda
IPC分类号： C23C16/46 , C30B23/06 , C30B25/10 , C23C16/00
CPC分类号： C23C16/46 , C30B23/063 , C30B25/10
摘要： A vapor phase growth unit for vapor phase growing on the surface of a wafer under a heated condition, which supports the wafer with a wafer supporter within a reaction chamber and has a heater under the wafer supported by said wafer supporter, wherein a reflection plate for reflecting at least downward heat from said heater is provided, an insulation cylinder is provided surrounding the side periphery of the heater, and the reflection plate consists of vitreous carbon.
摘要翻译：一种汽相生长装置，用于在加热状态下在晶片表面上生长的气相生长装置，其在反应室内将晶片支撑在晶片支撑件上，并且在由所述晶片支撑件支撑的晶片下方具有加热器，其中，提供了来自所述加热器的至少向下的热量的反射，围绕加热器的侧边缘设置绝缘筒，并且反射板由玻璃碳组成。

37. 发明授权

US5544201A Signal suppressing apparatus 失效
标题翻译：信号抑制装置
公开(公告)号：US5544201A
公开(公告)日：1996-08-06
申请号：US272330
申请日：1994-07-08
申请人： Tsutomu Hoshino , Atsushi Yamaguchi , Tadashi Ohashi , Juro Ohga , Hiroyuki Furuya
发明人： Tsutomu Hoshino , Atsushi Yamaguchi , Tadashi Ohashi , Juro Ohga , Hiroyuki Furuya
IPC分类号： G06F17/00 , G06F19/00 , G06Q50/00 , G06Q50/04 , G10K11/178 , H03H21/00 , H04B1/10
CPC分类号： H03H21/00 , G10K11/1784 , G10K2210/112 , G10K2210/3031 , G10K2210/3042 , G10K2210/3045 , G10K2210/3053 , G10K2210/3214
摘要： A signal suppressing apparatus for suppressing undesired signal components, in which a first filter electrically simulating a propagation system A of a physical phenomena such as a sound, vibration, electricity, etc. is mounted; a signal having a correlation to the signal to be input to the propagation system A is input to this first filter; and the output of the first filter exerts an influence upon the signal passing the propagation system A to make the passed signal approximate the intended value, wherein the first filter is split into a plurality of filters, each of which is composed by a discrete DSP, outputs are individually calculated in the split individual filters, and the individual calculation results are tabulated, whereby a value the same as the value obtained where the calculation is made without splitting of the first filter is obtained. This enables high speed signal processing even if a high speed DSP is not used.
摘要翻译：一种用于抑制不期望的信号分量的信号抑制装置，其中安装了用于模拟诸如声音，振动，电力等物理现象的传播系统A的第一滤波器; 将与要输入到传播系统A的信号相关的信号输入到该第一滤波器; 并且第一滤波器的输出对通过传播系统A的信号产生影响，使通过的信号接近预期值，其中第一滤波器被分成多个滤波器，每个滤波器由离散DSP组成，分离单独滤波器中的输出被单独计算，并且单独计算结果被列表，从而获得与在不分割第一滤波器的情况下进行计算而获得的值相同的值。即使不使用高速DSP，也能实现高速信号处理。

38. 发明授权

US5178727A Ceramic membrane device and a method of producing the same 失效
标题翻译：陶瓷膜装置及其制造方法
公开(公告)号：US5178727A
公开(公告)日：1993-01-12
申请号：US831752
申请日：1992-02-10
申请人： Eiichi Toya , Yukio Itoh , Tadashi Ohashi , Masayuki Sumiya
发明人： Eiichi Toya , Yukio Itoh , Tadashi Ohashi , Masayuki Sumiya
IPC分类号： G03F1/22
CPC分类号： G03F1/22 , Y10T428/24322
摘要： A ceramic membrane device for a photomask is a ring-shaped base plate constituting a circumferential frame and having a flat front surface, an outer side surface and a rear surface, a front CVD coating supported on the front surface of the base plate and defining a flat surface on which a masking pattern is to be formed, and a rear CVD coating formed on the rear surface of the base plate. The front and rear CVD coatings are made of a silicon compound. The ceramic membrane device is made by providing a plate having a flat front surface, a side surface and a rear surface, forming a front CVD coating made of a silicon compound on the side surface and the front surface of the plate, forming a rear CVD coating made of a silicon compound on a partial area of the rear surface of the plate so that an uncoated area remains, removing the portion of the plate corresponding to the uncoated area by means of etching so that the remaining portion of the plate can function as a circumferential frame for the ceramic membrane formed by the front coating.
摘要翻译：一种用于光掩模的陶瓷膜装置是构成圆周框架并具有平坦的前表面，外侧表面和后表面的环形基板，支撑在基板的前表面上的前CVD涂层，要形成掩模图案的平坦表面和形成在基板的后表面上的后CVD涂层。前后CVD涂层由硅化合物制成。陶瓷膜装置通过提供具有平坦的前表面，侧表面和后表面的板制成，在板的侧表面和前表面上形成由硅化合物制成的前CVD涂层，形成后CVD 由硅化合物制成的涂层在板的后表面的局部区域上，使得未涂覆区域残留，通过蚀刻去除对应于未涂覆区域的板的部分，使得板的剩余部分可以作为由前涂层形成的用于陶瓷膜的圆周框架。

39. 发明授权

US5074017A Susceptor 失效
标题翻译： SUSCEPTOR
公开(公告)号：US5074017A
公开(公告)日：1991-12-24
申请号：US454782
申请日：1989-12-26
申请人： Eiichi Toya , Yukio Itoh , Tadashi Ohashi , Masayuki Sumiya , Yasumi Sasaki
发明人： Eiichi Toya , Yukio Itoh , Tadashi Ohashi , Masayuki Sumiya , Yasumi Sasaki
IPC分类号： C30B25/12 , C23C16/44 , C23C16/458 , H01L21/205 , H01L21/31
CPC分类号： C23C16/4584 , Y10T29/41
摘要： A susceptor for use in a vertical vapor growth apparatus includes a susceptor body (12) having an upper surface, a plurality of wafer receiving portions (17) formed in the upper surface of the susceptor body (12), and plates (16) fixed in the upper surface of the susceptor body (12) near the wafer setting portions (17). The plates (16) have an upper surface such that, when wafers (5) are mounted in the wafer setting portions (17), the upper surfaces of the plates (16) and the wafers (5) are positioned substantially in the same plane. The plates (16) are made of quartz glass or fused silica.
摘要翻译：用于垂直气相生长装置的基座包括具有上表面的基座体（12），形成在基座体（12）的上表面中的多个晶片接收部分（17），以及固定在靠近晶片设置部分（17）的基座主体（12）的上表面中。板（16）具有上表面，使得当晶片（5）安装在晶片设置部分（17）中时，板（16）和晶片（5）的上表面基本上位于同一平面。板（16）由石英玻璃或熔融石英制成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式