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    • 31. 发明授权
    • Method of manufacturing a vacuum device
    • 制造真空装置的方法
    • US5953580A
    • 1999-09-14
    • US925197
    • 1997-09-08
    • Sung Weon KangJin Ho LeeKyoung Ik ChoHyung Joun Yoo
    • Sung Weon KangJin Ho LeeKyoung Ik ChoHyung Joun Yoo
    • H01L21/205H01J9/02H01L20/100
    • H01J9/025
    • A method of manufacturing a vacuum device utilizing a sputtering process is disclosed. According to the present invention, the vacuum device includes a silicon substrate. An emission electrode having a sharp ended tip is formed by etching the silicon substrate. An insulating layer is formed on the silicon substrate so as to make the entire structure of the emission electrode to be exposed, with the emission electrode being surrounded by the insulating layer. A gate electrode is then formed adjacent to the sharp ended tip of the emission electrode. According to the present invention, it has advantages that the emission electrode is manufactured by forming the silicon pillar using the isotropic etching and anisotropic etching and the gate electrode can be easily formed adjacent to the emission electrode by using the sputtering method after the gate insulating layer is formed. Further, the distance between the emission electrode and the gate electrode may be easily adjusted, and the vacuum device may be operated with the desired voltage by controlling the distance between the emission electrode and the gate electrode of the vacuum device.
    • 公开了一种使用溅射工艺制造真空装置的方法。 根据本发明,真空装置包括硅基板。 通过蚀刻硅衬底形成具有尖端的尖端的发射电极。 在硅衬底上形成绝缘层,以使发射电极的整个结构被暴露,发射电极被绝缘层包围。 然后在发射电极的尖端处形成栅电极。 根据本发明,具有通过使用各向同性蚀刻和各向异性蚀刻形成硅柱来制造发射电极的优点,并且通过在栅绝缘层之后使用溅射法容易地在栅极电极附近形成栅电极 形成了。 此外,可以容易地调节发射电极和栅电极之间的距离,并且可以通过控制发射电极和真空装置的栅电极之间的距离,以期望的电压来操作真空装置。