专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US07581863B2 Laser light source adapted for LCD back-lit displays 有权
标题翻译：适用于LCD背光显示的激光光源
公开(公告)号：US07581863B2
公开(公告)日：2009-09-01
申请号：US11198474
申请日：2005-08-04
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： G02B6/04
CPC分类号： G02F1/133615 , G02F1/133603 , G02F1/133621 , G02F2201/02
摘要： A light source and a display utilizing the same are disclosed. The light source includes a laser, a light pipe, and an optical fiber. The light pipe includes a layer of transparent material having a top surface, a bottom surface, and a first edge. The first optical fiber couples light from the laser to the first edge at a first location. The light is injected into the light pipe such that the light is reflected from the top surface and the light pipe includes a plurality of scattering centers that scatter the light through the top surface. The laser can be in thermal contact with a heat sink placed at a location that is adapted for dissipating heat. The light source can include a plurality of lasers in a color display. The light from the various lasers can be mixed before it reaches the light pipe or in the light pipe.
摘要翻译：公开了一种光源和使用该光源的显示器。光源包括激光器，光管和光纤。光管包括具有顶表面，底表面和第一边缘的透明材料层。第一光纤在第一位置将来自激光器的光耦合到第一边缘。光被注入到光管中，使得光从顶表面反射，并且光管包括使光通过顶表面散射的多个散射中心。激光器可以与放置在适于散热的位置处的散热器热接触。光源可以包括彩色显示器中的多个激光器。来自各种激光器的光可以在到达光管或光管之前混合。

32. 发明申请

US20090146165A1 LED Structure 有权
标题翻译： LED结构
公开(公告)号：US20090146165A1
公开(公告)日：2009-06-11
申请号：US11952048
申请日：2007-12-06
申请人： Ghulam Hasnain , Steven D. Lester
发明人： Ghulam Hasnain , Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44
摘要： A light emitting device, a wafer for making the same, and method for fabricating the same are disclosed. The device and wafer include a first layer of a first conductivity type, an active layer, and a layer of a second conductivity type. The active layer overlies the first layer, the active layer generating light. The second layer overlies the active layer, the second layer having a first surface in contact adjacent to the active layer and a second surface having a surface that includes features that scatter light striking the second surface. A layer of transparent electrically conducing material is adjacent to the second surface and covered by a first layer of a dielectric material that is transparent to the light generated by the active layer. A mirror layer that has a reflectivity greater than 90 percent is deposited on the first layer of dielectric material.
摘要翻译：公开了一种发光器件，用于制造它的晶片及其制造方法。器件和晶片包括第一导电类型的第一层，有源层和第二导电类型的层。有源层覆盖第一层，有源层产生光。第二层覆盖有源层，第二层具有邻近有源层的接触的第一表面和具有散射射入第二表面的光的表面的第二表面。透明导电材料层与第二表面相邻并被由对活性层产生的光透明的电介质材料的第一层覆盖。反射率大于90％的镜面层沉积在第一层电介质材料上。

33. 发明授权

US07495314B2 Ohmic contact on p-type GaN 失效
标题翻译： p型GaN上的欧姆接触
公开(公告)号：US07495314B2
公开(公告)日：2009-02-24
申请号：US11234993
申请日：2005-09-26
申请人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , David P. Bour , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01L29/22
CPC分类号： H01L21/28575 , H01L33/14 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.
摘要翻译：根据本发明的欧姆接触包括一层p型GaN基材料。 II-VI族化合物半导体的第一层位于邻近p型GaN基材料层的位置。欧姆接触还包括提供金属接触的金属层。不同的II-VI化合物半导体的第二层位于金属层附近。

34. 发明申请

US20080303053A1 GaN Based LED Having Reduced Thickness and Method for Making the Same 有权
标题翻译：具有降低厚度的GaN基LED及其制造方法
公开(公告)号：US20080303053A1
公开(公告)日：2008-12-11
申请号：US11761223
申请日：2007-06-11
申请人： Steven D. Lester , Frank T. Shum
发明人： Steven D. Lester , Frank T. Shum
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/22
摘要： A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.
摘要翻译：公开了一种具有载体，发光结构以及第一和第二电极的装置。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当来自n型GaN层的电子和空穴以及有源层发射预定波长的光的有源层和 p型GaN层分别结合在一起。第一和第二电极结合到不与有源层相邻的p型和n型GaN层的表面。 n型GaN层的厚度小于1.25μm。在n型GaN层的薄化期间，载体与发光结构结合。减薄的发光结构可以转移到第二载体以提供类似于在LED的顶表面上具有接触的常规LED的装置。

35. 发明授权

US07095052B2 Method and structure for improved LED light output 有权
公开(公告)号：US07095052B2
公开(公告)日：2006-08-22
申请号：US10971380
申请日：2004-10-22
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L27/15
CPC分类号： H01L33/08
摘要： The efficiency of LEDs is increased by incorporating multiple active in series separated by tunnel junction diodes. This also allows the LEDs to operate at longer wavelengths.

36. 发明授权

US5376229A Method of fabrication of adjacent coplanar semiconductor devices 失效
标题翻译：相邻共面半导体器件的制造方法
公开(公告)号：US5376229A
公开(公告)日：1994-12-27
申请号：US131835
申请日：1993-10-05
申请人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
发明人： Jeffrey N. Miller , Steven D. Lester , Danny E. Mars
IPC分类号： H01L21/033 , H01L21/20 , H01L21/306 , B44C1/22
CPC分类号： H01L21/0331 , H01L21/02395 , H01L21/02546
摘要： A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.
摘要翻译：一种用于处理提供的不同类型的共面半导体器件的方法。该方法包括以下步骤：形成用于在衬底上形成第一器件区域的第一层，在第一器件区域上形成外延半导体剥离层，去除第一器件区域的一部分以打开形成区域的第二器件区域，外延地沉积第二器件区域，以及去除剥离层以使剩余在衬底上的第一和第二器件区域。

37. 发明申请

US20130313519A1 Series Connected Segmented LED 有权
标题翻译：串联连接分段LED
公开(公告)号：US20130313519A1
公开(公告)日：2013-11-28
申请号：US13959313
申请日：2013-08-05
申请人： Steven D. Lester , CHIH-WEI CHUANG
发明人： Steven D. Lester , CHIH-WEI CHUANG
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L27/153 , H01L33/0079 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/24
摘要： A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment.
摘要翻译：公开了一种光源及其制造方法。光源包括导电衬底和被分成段的发光结构。发光结构包括沉积在衬底上的第一导电类型的第一层半导体材料，覆盖第一层的有源层和覆盖有源层的第一导电类型的相反导电类型的第二半导体材料层。障碍物将发光结构分成彼此电隔离的第一和第二段。串联连接电极将第一段中的第一层连接到第二段中的第二层。电源触头电连接到第一段中的第二层，以及电连接到第二段中的第一层的第二电源触头。

38. 发明授权

US08581267B2 Series connected segmented LED 有权
公开(公告)号：US08581267B2
公开(公告)日：2013-11-12
申请号：US13292938
申请日：2011-11-09
申请人： Steven D. Lester , Chih-Wei Chuang
发明人： Steven D. Lester , Chih-Wei Chuang
IPC分类号： H01L29/18 , H01L33/00
CPC分类号： H01L33/08 , H01L27/153 , H01L33/0079 , H01L33/32 , H01L33/387 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/24
摘要： A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment.

39. 发明授权

US08330390B2 AC LED light source with reduced flicker 有权
标题翻译：交流LED光源减少闪烁
公开(公告)号：US08330390B2
公开(公告)日：2012-12-11
申请号：US13084331
申请日：2011-04-11
申请人： David Hum , Steven D. Lester
发明人： David Hum , Steven D. Lester
IPC分类号： G05F1/00
CPC分类号： H05B33/083 , H05B33/0824
摘要： A lighting apparatus and method for operating LED-based lighting devices are disclosed. The apparatus includes a receiver that receives a potential from a power source whose output varies as a function of time, an energy storage device, and an LED array. The energy storage device stores energy from the power source when the driving potential is greater than a predetermined value. The LED array has variable forward bias potential, the LED array generating light when a potential across the array is greater than the selected forward bias potential. A source selector connects the energy storage device to the array when the potential from the power source is less than a predetermined value. A controller that varies the forward bias potential such that the difference between the forward bias potential and potential across the array is maintained at a value less than a predetermined value.
摘要翻译：公开了一种用于操作基于LED的照明装置的照明装置和方法。该装置包括从输出随时间变化的电源接收电位的接收器，能量存储装置和LED阵列。当驱动电位大于预定值时，能量存储装置存储来自电源的能量。 LED阵列具有可变的正向偏置电位，当阵列上的电位大于所选择的正向偏置电位时，LED阵列产生光。当来自电源的电位小于预定值时，源选择器将能量存储装置连接到阵列。控制器，其改变正向偏置电位，使得正向偏置电位和阵列之间的电位之间的差保持在小于预定值的值。

40. 发明授权

US08324652B1 Highly reflective mounting arrangement for LEDs 有权
标题翻译： LED的高反射安装方式
公开(公告)号：US08324652B1
公开(公告)日：2012-12-04
申请号：US12610261
申请日：2009-10-30
申请人： Steven D. Lester , Frank Shum , Chao-Kun Lin , William So , Qingwei Mo
发明人： Steven D. Lester , Frank Shum , Chao-Kun Lin , William So , Qingwei Mo
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/46
摘要： A semiconductor device emitting light about a predetermined wavelength comprising a structure comprising a plurality of layers, sometimes referred to as a stack, providing low resistance, high reflectivity and ohmic contacts to at least one semiconductor material.
摘要翻译：发射围绕预定波长的光的半导体器件包括包括多个层的结构，有时被称为堆叠，向至少一个半导体材料提供低电阻，高反射率和欧姆接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式