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31. 发明授权

US08324033B2 TFT array substrate and manufacturing method thereof 有权
标题翻译： TFT阵列基板及其制造方法
公开(公告)号：US08324033B2
公开(公告)日：2012-12-04
申请号：US11958613
申请日：2007-12-18
申请人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
发明人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , H01L27/1214 , H01L27/1248 , H01L27/1288
摘要： A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.
摘要翻译： TFT阵列基板及其制造方法，其中，TFT阵列基板包括基板; 栅极线和栅极电极，其被栅极绝缘层，半导体层和欧姆接触层依次覆盖。在所得到的衬底上以及栅极线和栅电极，栅绝缘层，半导体层和欧姆接触层的两侧上形成绝缘层。然后在欧姆接触层中形成沟槽，以将半导体层上的欧姆接触层分开。然后在绝缘层和欧姆接触层上形成数据线和第一和第二源极/漏极。

32. 发明申请

US20100270556A1 TFT LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： TFT液晶阵列基板及其制造方法
公开(公告)号：US20100270556A1
公开(公告)日：2010-10-28
申请号：US12830831
申请日：2010-07-06
申请人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
发明人： Zhangtao Wang , Haijun Qiu , Tae Yup Min , Seung Moo Rim
IPC分类号： H01L33/08 , H01L21/28
CPC分类号： H01L27/1248 , H01L27/1288
摘要： A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate comprises a substrate. A gate line and a gate electrode that is formed integrally with the gate line are formed on the substrate. A first insulating layer and a semiconductor layer are formed sequentially on the gate line and the gate electrode. A second insulting layer covers sidewalls of the gate line and the gate electrode, the first insulating layer, and the semiconductor layer. An etching stop layer is formed on the semiconductor layer and exposes a part of the semiconductor layer on both sides of the etching stop layer. The TFT LCD of the present invention can be manufactured with a four-mask process.
摘要翻译：一种TFT LCD阵列基板及其制造方法。 TFT LCD阵列基板包括基板。在基板上形成与栅极线一体形成的栅极线和栅电极。在栅极线和栅电极上依次形成第一绝缘层和半导体层。第二绝缘层覆盖栅极线和栅电极，第一绝缘层和半导体层的侧壁。在半导体层上形成蚀刻停止层，在蚀刻停止层的两侧露出半导体层的一部分。本发明的TFT LCD可以用四掩模工艺制造。

33. 发明申请

US20100220254A1 TFT-LCD ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译： TFT-LCD阵列基板及其制造方法
公开(公告)号：US20100220254A1
公开(公告)日：2010-09-02
申请号：US12705694
申请日：2010-02-15
申请人： Xiang LIU , Seung Moo RIM , Xu CHEN , Zhenyu XIE
发明人： Xiang LIU , Seung Moo RIM , Xu CHEN , Zhenyu XIE
IPC分类号： G02F1/1368 , H01L21/77
CPC分类号： H01L33/08 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L27/1288
摘要： A thin film transistor liquid crystal display (TFT-LCD) array substrate comprising a gate line and a data line formed on a base substrate. The gate line and the data line intersect with each other to define a pixel region, in which a pixel electrode and a thin film transistor (TFT) are formed, and a first insulating layer and a second insulating layer are interposed between the gate line and the data line, and the pixel electrode is disposed between the first insulating layer and the second insulating layer. A method of manufacturing a TFT-LCD is also disclosed.
摘要翻译：一种薄膜晶体管液晶显示器（TFT-LCD）阵列基板，包括形成在基底基板上的栅极线和数据线。栅极线和数据线彼此相交以限定其中形成像素电极和薄膜晶体管（TFT）的像素区域，并且第一绝缘层和第二绝缘层插入在栅极线和第二绝缘层之间数据线和像素电极设置在第一绝缘层和第二绝缘层之间。还公开了制造TFT-LCD的方法。

34. 发明申请

US20100214518A1 TFT-LCD ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： TFT-LCD阵列基板及其制造方法
公开(公告)号：US20100214518A1
公开(公告)日：2010-08-26
申请号：US12703315
申请日：2010-02-10
申请人： Xu CHEN , Seung Moo RIM , Zhenyu XIE , Xiang LIU
发明人： Xu CHEN , Seung Moo RIM , Zhenyu XIE , Xiang LIU
IPC分类号： G02F1/1343 , H01J9/02 , H01L21/77
CPC分类号： G02F1/136213 , G02F2201/40 , H01L27/124
摘要： A thin film transistor liquid crystal display (TFT-LCD) array substrate and a method for forming the same. The thin film transistor liquid crystal display (TFT-LCD) device, comprising gate lines and data lines that intersecting with each other to define pixel regions, wherein a pixel electrode and a thin film transistor are formed in each of the pixel regions, and wherein the data lines each have a mirror-symmetry structure so that coupling capacitance between one data line and the pixel electrodes in an upper adjacent pixel region and a lower pixel region that are adjacent changes oppositely.
摘要翻译：薄膜晶体管液晶显示器（TFT-LCD）阵列基板及其形成方法。薄膜晶体管液晶显示器（TFT-LCD）器件，包括彼此相交以限定像素区域的栅极线和数据线，其中像素电极和薄膜晶体管形成在每个像素区域中，并且其中数据线各自具有镜像对称结构，使得一个数据线与相邻的上邻近像素区域和下部像素区域中的像素电极之间的耦合电容相反地变化。

35. 发明授权

US07531394B2 Manufacturing method for a TFT LCD array substrate 有权
标题翻译： TFT LCD阵列基板的制造方法
公开(公告)号：US07531394B2
公开(公告)日：2009-05-12
申请号：US11767600
申请日：2007-06-25
申请人： Chunping Long , Jigang Zhao , Seung Moo Rim
发明人： Chunping Long , Jigang Zhao , Seung Moo Rim
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F1/136227 , G02F2001/136231 , G02F2001/136236 , H01L27/1214
摘要： The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film. The data line and the source electrode and drain electrode of the TFT are made of the same conductive film, and the connecting conductive film and the pixel electrode are made of the same conductive film in the same photolithography process.
摘要翻译：本发明公开了通过在两个光刻工艺中仅使用两个掩模的灰色蒙版技术和光致抗蚀剂剥离技术以及由其制造的TFT LCD阵列基板来制造TFT LCD阵列基板的方法。在合成的阵列基板中，栅极线和数据线彼此垂直并相交，以限定像素区域，并且栅极线和数据线之一是连续的，而另一个是不连续的。阵列基板被钝化保护膜覆盖。断开的栅线或数据线通过形成在钝化保护膜上的通孔和形成在钝化保护膜上的连接导电膜连接在一起。 TFT的数据线和源电极和漏电极由相同的导电膜制成，并且在相同的光刻工艺中，连接导电膜和像素电极由相同的导电膜制成。

36. 发明申请

US20070272926A1 TFT LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： TFT液晶阵列基板及其制造方法
公开(公告)号：US20070272926A1
公开(公告)日：2007-11-29
申请号：US11752475
申请日：2007-05-23
申请人： Chaoyong DENG , Seung Moo RIM
发明人： Chaoyong DENG , Seung Moo RIM
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L21/84 , H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A TFT LCD array substrate and a manufacturing method thereof. The TFT LCD array substrate includes a substrate and a pixel array on the substrate. Each pixel has: a gate line and a gate electrode formed on the substrate; a gate insulating layer formed on the gate line and the gate electrode; a semiconductor layer formed on the gate insulating layer disposed on the gate electrode; an ohmic contact layer having two parts, which are disposed on two sides of the semiconductor layer respectively and are apart from one another; an isolation insulating dielectric layer covering the substrate and the gate insulating layer except a portion on which the semiconductor layer is formed; a pixel electrode formed on the isolation insulating dielectric layer and the ohmic contact layer over the semiconductor layer; a source/drain electrode formed on the pixel electrode over the ohmic contact layer, and a passivation layer at least covering the semiconductor layer. The TFT LCD array substrate can be manufactured with a 3Mask technology, thereby the process steps are reduced and the utilization ratio of the equipment is improved.
摘要翻译：一种TFT LCD阵列基板及其制造方法。 TFT LCD阵列基板包括衬底和衬底上的像素阵列。每个像素具有：形成在基板上的栅极线和栅电极; 形成在栅极线和栅电极上的栅极绝缘层; 形成在栅电极上的栅极绝缘层上形成的半导体层; 具有两部分的欧姆接触层，其分别设置在半导体层的两侧并且彼此分开; 绝缘绝缘介电层，覆盖所述基板和所述栅极绝缘层，除了形成有所述半导体层的部分之外; 形成在隔离绝缘介电层上的像素电极和半导体层上的欧姆接触层; 形成在欧姆接触层上的像素电极上的源/漏电极，以及至少覆盖半导体层的钝化层。 TFT LCD阵列基板可以用3掩模技术制造，从而减少了工艺步骤，提高了设备的利用率。

37. 发明申请

US20070246707A1 THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管液晶显示阵列基板及其制造方法
公开(公告)号：US20070246707A1
公开(公告)日：2007-10-25
申请号：US11737954
申请日：2007-04-20
申请人： Chaoyong Deng , Seung Moo Rim
发明人： Chaoyong Deng , Seung Moo Rim
IPC分类号： H01L31/00 , H01L29/04
CPC分类号： H01L29/66765 , G02F1/1362 , G02F2001/13625 , H01L24/24 , H01L27/1214 , H01L27/1288 , H01L33/62 , H01L2924/15788 , H01L2924/00
摘要： A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.
摘要翻译：一种TFT LCD阵列基板及其制造方法。该制造方法包括以下步骤：在衬底上形成薄膜晶体管以形成与衬底上的栅极线连接的栅极线和栅电极; 在栅电极上形成栅极绝缘层和半导体层; 在所述半导体层上形成欧姆接触层; 在所得到的基板上依次形成透明像素电极层和源极/漏极电极金属层，其中透明像素电极层与栅极线和栅电极电绝缘，并且透明像素电极层与经由欧姆接触层的半导体层的两侧; 并且使用相对于所得到的基板的灰度调色掩模进行掩模和蚀刻，以同时形成透明像素电极，源极/漏极电极和数据线。

38. 发明授权

US06841428B2 Method for fabricating thin film transistor liquid crystal display 有权
标题翻译：制造薄膜晶体管液晶显示器的方法
公开(公告)号：US06841428B2
公开(公告)日：2005-01-11
申请号：US10722275
申请日：2003-11-25
申请人： Kyoung Seok Son , Seung Moo Rim , Hyun Jin Kim , Jin Hui Cho
发明人： Kyoung Seok Son , Seung Moo Rim , Hyun Jin Kim , Jin Hui Cho
IPC分类号： G02F1/13 , G02F1/136 , G02F1/1368 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/318 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L29/66765 , H01L27/1214 , H01L29/78603
摘要： The present invention relates to a method for fabricating a thin film transistor liquid crystal display, which comprises the steps of: forming a gate electrode on an insulating substrate; successively forming first and second insulating films on the insulating substrate including the gate electrode, the first insulating film being formed under first deposition conditions including power, pressure and electrode interval, the second insulating film being formed under second deposition conditions where at least one of the first deposition conditions is changed continuously over time; successively forming first and second amorphous silicon layers on the second insulating film to form an active layer; successively forming an ohmic contact layer and a source/drain electrode on the active layer; and forming a protective film on the resulting structure including the source/drain electrode.
摘要翻译：薄膜晶体管液晶显示器的制造方法技术领域本发明涉及一种薄膜晶体管液晶显示器的制造方法，其特征在于，包括：在绝缘基板上形成栅电极; 在包括栅电极的绝缘基板上依次形成第一绝缘膜和第二绝缘膜，第一绝缘膜在包括功率，压力和电极间隔的第一沉积条件下形成，第二绝缘膜在第二沉积条件下形成，其中至少一个第一次沉积条件随时间不断变化; 在所述第二绝缘膜上依次形成第一和第二非晶硅层以形成有源层; 在有源层上依次形成欧姆接触层和源极/漏极; 并在所得结构上形成保护膜，该结构包括源极/漏极。

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