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31. 发明申请

US20100267216A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100267216A1
公开(公告)日：2010-10-21
申请号：US12824775
申请日：2010-06-28
申请人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
发明人： Akihisa SHIMOMURA , Tatsuya MIZOI , Hidekazu MIYAIRI , Koichiro TANAKA
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L21/02002 , H01L21/02038 , H01L21/3043 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L51/5206 , H01L2251/554
摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
摘要翻译：提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。具有第一突起的第一接合衬底附接到基底衬底。然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

32. 发明申请

US20100267179A1 Method for Manufacturing Semiconductor Device 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100267179A1
公开(公告)日：2010-10-21
申请号：US12827347
申请日：2010-06-30
申请人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Koichiro Tanaka , Hironobu Shoji , Shunpei Yamazaki
IPC分类号： H01L33/00
CPC分类号： H01L27/1288 , H01L21/0337 , H01L21/3086 , H01L21/32139 , H01L27/1214 , H01L29/66765 , H01L29/78633
摘要： A first layer is formed over a substrate, a light absorbing layer is formed over the first layer, and a layer having a light-transmitting property is formed over the light absorbing layer. The light absorbing layer is selectively irradiated with a laser beam via the layer having a light-transmitting property. When the light absorbing layer absorbs energy of the laser beam, due to emission of gas that is within the light absorbing layer, or sublimation, evaporation, or the like of the light absorbing layer, a part of the light absorbing layer and a part of the layer having a light-transmitting property in contact with the light absorbing layer are removed. By using the remaining part of the layer having a light-transmitting property or the remaining part of the light absorbing layer as a mask and etching the first layer, the first layer can be processed into a desired shape.
摘要翻译：第一层形成在衬底上，在第一层上形成光吸收层，并且在光吸收层上形成具有透光性的层。通过具有透光性的层，用激光束选择性地照射光吸收层。当光吸收层吸收激光束的能量时，由于光吸收层内的气体的发射或者光吸收层的升华，蒸发等，一部分光吸收层和除去与光吸收层接触的透光性的层。通过使用具有透光性的层的剩余部分或光吸收层的剩余部分作为掩模，并蚀刻第一层，可以将第一层加工成所需的形状。

33. 发明授权

US07795154B2 Method for manufacturing semiconductor device that uses laser ablation, to selectively remove one or more material layers 有权
标题翻译：用于制造使用激光烧蚀的半导体器件的方法，以选择性地去除一个或多个材料层
公开(公告)号：US07795154B2
公开(公告)日：2010-09-14
申请号：US11842403
申请日：2007-08-21
申请人： Koichiro Tanaka , Shunpei Yamazaki
发明人： Koichiro Tanaka , Shunpei Yamazaki
IPC分类号： H01L21/428
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/0732 , H01L27/1214 , H01L27/1288 , Y10S438/94
摘要： To provide a manufacturing apparatus of a semiconductor device, which does not use a stepper in a manufacturing process in the case where mass production of semiconductor devices is carried out by using a large-sized substrate. A thin film formed over a substrate having an insulating surface is selectively irradiated with a laser beam through light control means, specifically through an electro-optical device to cause ablation; accordingly, the thin film is partially removed, thereby processing the thin film in a remaining region into a desired shape. The electro-optical device functions as a variable mask by inputting an electrical signal based on design CAD data of the semiconductor device.
摘要翻译：为了提供在通过使用大尺寸基板进行半导体器件的批量生产的情况下在制造工艺中不使用步进器的半导体器件的制造装置。通过光控制装置，特别是通过电光装置选择性地用激光束照射形成在具有绝缘表面的基板上的薄膜以引起烧蚀; 因此，薄膜被部分去除，从而将剩余区域中的薄膜处理成期望的形状。电光装置通过基于半导体器件的设计CAD数据输入电信号而用作可变掩模。

34. 发明授权

US07790533B2 Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07790533B2
公开(公告)日：2010-09-07
申请号：US10582614
申请日：2005-06-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02675 , B23K26/0604 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , H01L21/02678 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1285 , H01L29/78675 , H01S3/2383
摘要： The present invention is to provide a technique that can increase productivity with high output power by combining a plurality of laser beams on an irradiation surface without any difficulties in optical alignment. According to this technique, laser beams having different wavelengths are combined using a plurality of laser oscillators and a dichroic mirror, or additionally a polarizer. For example, a first laser beam emitted from a first laser oscillator is combined with a second laser beam emitted from a second laser oscillator having different wavelength from the first laser beam in such a way that the first laser beam passes through a dichroic mirror and the second laser beam is reflected on the dichroic mirror, and the combined laser beam is projected to an irradiation surface.
摘要翻译：本发明是提供一种通过在照射面上组合多个激光束而能够以高输出功率提高生产率的技术，而不会使光取向困难。根据该技术，使用多个激光振荡器和分色镜或另外的偏振器来组合具有不同波长的激光束。例如，从第一激光振荡器发射的第一激光束与从第一激光束具有不同波长的第二激光振荡器发射的第二激光束组合，使得第一激光束通过二向色镜，并且第二激光束在分色镜上反射，并且将组合的激光束投射到照射表面。

35. 发明申请

US20100207040A1 LIGHT EXPOSURE APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：使用其的半导体器件的曝光装置和制造方法
公开(公告)号：US20100207040A1
公开(公告)日：2010-08-19
申请号：US12757063
申请日：2010-04-09
申请人： Koichiro TANAKA , Yoshiaki YAMAMOTO
发明人： Koichiro TANAKA , Yoshiaki YAMAMOTO
IPC分类号： G21G5/00
CPC分类号： H01L21/02675 , G03F7/70383 , H01L21/2026 , H01L21/268 , H01L27/1266 , H01L27/1285 , Y10T29/41
摘要： When annealing of a semiconductor film is conducted using a plurality of lasers, each of the distances between laser irradiation regions is different. When a lithography step is conducted in accordance with a marker which is formed over a substrate in advance after the step, light-exposure is not correctly conducted to a portion crystallized by laser. By using a laser irradiation region obtained on a laser irradiation step as a marker, light-exposure is conducted by making a light-exposure position of a stepper coincide with a large grain size region in the laser irradiation region. A large grain size region and a poorly crystalline region are detected by utilizing a thing that scattering intensity of light is different between the large grain size region and the poorly crystalline region, thereby determining a light-exposure position.
摘要翻译：当使用多个激光器进行半导体膜的退火时，激光照射区域之间的距离各不相同。当根据在步骤之后预先在衬底上形成的标记进行光刻步骤时，曝光不能正确地传导到通过激光结晶的部分。通过使用在激光照射步骤中获得的激光照射区域作为标记，通过使激光照射区域中的步进曝光位置与大粒径区域重合来进行曝光。通过利用在大晶粒尺寸区域和不良结晶区域之间的散射光强度不同的物质来检测大晶粒尺寸区域和不良结晶区域，从而确定曝光位置。

36. 发明授权

US07772089B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07772089B2
公开(公告)日：2010-08-10
申请号：US12369014
申请日：2009-02-11
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： Highly reliable single crystal semiconductor layers and semiconductor devices can be obtained through a fewer manufacturing steps. A method for manufacturing a semiconductor device is proposed. A single crystal semiconductor substrate provided with an insulating film is irradiated with an ion beam to form a damaged region in the single crystal semiconductor substrate; liquid glass is floated over a liquid denser than the liquid glass to shape the liquid glass into a plate; the single crystal semiconductor substrate provided with the damaged region is placed over the plate-like liquid glass so that the insulating film and the liquid glass face each other; the plate-like liquid glass and the single crystal semiconductor substrate are cooled slowly, whereby a glass substrate is obtained from the plate-like liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together; and a single crystal semiconductor layer is separated from the single crystal semiconductor substrate along the damaged region.
摘要翻译：可以通过较少的制造步骤获得高度可靠的单晶半导体层和半导体器件。提出了一种制造半导体器件的方法。用离子束照射设置有绝缘膜的单晶半导体衬底，以在单晶半导体衬底中形成受损区域; 液体玻璃漂浮在比液体玻璃更稠密的液体中，以将液体玻璃成形为板; 设置有受损区域的单晶半导体衬底被放置在板状液体玻璃上，使得绝缘膜和液体玻璃彼此面对; 板状液体玻璃和单晶半导体基板缓慢冷却，由此从板状液体玻璃获得玻璃基板，同时将玻璃基板和单晶半导体基板接合在一起; 并且单晶半导体层沿着损伤区域与单晶半导体衬底分离。

37. 发明授权

US07760433B2 Laser irradiation apparatus 失效
标题翻译：激光照射装置
公开(公告)号：US07760433B2
公开(公告)日：2010-07-20
申请号：US11265799
申请日：2005-11-01
申请人： Shunpei Yamazaki , Koichiro Tanaka , Satoshi Teramoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Satoshi Teramoto
IPC分类号： G02B27/10
CPC分类号： G02B27/0905 , B23K26/0604 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/067 , B23K2101/40 , G02B27/09 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02686 , H01L21/2026 , H01L27/1285 , H01S3/005 , H01S5/4025
摘要： There are disposed two homogenizers for controlling an irradiation energy density in the longitudinal direction of a laser light transformed into a linear one which is inputtted into the surface to be irradiated. Also, there is disposed one homogenizer for controlling an irradiation energy density in a width direction of the linear laser light. According to this, the uniformity of laser annealing can be improved by the minimum number of homogenizers.
摘要翻译：设置两个均质器，用于控制转换成被输入到待照射表面的直线激光的激光的纵向的照射能量密度。另外，设置一个用于控制线性激光的宽度方向的照射能量密度的均质器。因此，可以通过最小数量的均化器来提高激光退火的均匀性。

38. 发明授权

US07745310B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07745310B2
公开(公告)日：2010-06-29
申请号：US12216622
申请日：2008-07-08
申请人： Akihisa Shimomura , Tatsuya Mizoi , Hidekazu Miyairi , Koichiro Tanaka
发明人： Akihisa Shimomura , Tatsuya Mizoi , Hidekazu Miyairi , Koichiro Tanaka
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L21/02002 , H01L21/02038 , H01L21/3043 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L51/5206 , H01L2251/554
摘要： To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.
摘要翻译：提供一种制造半导体器件的方法，其中在多个位置处转移的半导体膜之间的空间变窄。具有第一突起的第一接合衬底附接到基底衬底。然后，第一接合基板在第一突起处分离，使得第一半导体膜形成在基底基板上。接下来，具有第二突起的第二接合基板被附接到基底基板，使得第二突起被放置在与形成第一半导体膜的区域不同的区域中。随后，第二接合基板在第二突起处分离，使得第二半导体膜形成在基底基板上。在第二接合基板中，与第二接合基板垂直的方向（深度方向）上的每个第二突起的宽度大于首先形成的第一半导体膜的膜厚。

39. 发明授权

US07704765B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07704765B2
公开(公告)日：2010-04-27
申请号：US11889110
申请日：2007-08-09
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板剥离并快速剥离半导体元件。由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离，因此通过热处理使剥离层结晶而施加应力。因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性在基板上。

40. 发明申请

US20100098879A1 Method for Manufacturing Light-Emitting Device 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20100098879A1
公开(公告)日：2010-04-22
申请号：US12579067
申请日：2009-10-14
申请人： Kohei Yokoyama , Koichiro Tanaka , Hisao Ikeda
发明人： Kohei Yokoyama , Koichiro Tanaka , Hisao Ikeda
IPC分类号： B05D3/06
CPC分类号： H01L51/0003 , H01L51/56
摘要： A method for manufacturing a light-emitting device is provided, which includes a step of forming a light-absorbing layer including an unevenness portion over a first substrate, a step of forming a first organic compound layer over the light-absorbing layer, a step of providing a second substrate over the first substrate with the light-absorbing layer and the first organic compound layer interposed therebetween, and a step of irradiating the light-absorbing layer with light to deposit a second organic compound layer including a material contained in the first organic compound layer onto the second substrate.
摘要翻译：提供了一种制造发光器件的方法，其包括在第一衬底上形成包括凹凸部分的光吸收层的步骤，在光吸收层上形成第一有机化合物层的步骤，步骤在所述第一基板上设置有第二基板，所述第二基板具有所述光吸收层和所述第一有机化合物层之间的第二基板，以及将光吸收层照射光以沉积包含第一基板的材料的第二有机化合物层的步骤有机化合物层到第二基板上。

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