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31. 发明授权

US09129977B2 Method of controlling stress in group-III nitride films deposited on substrates 有权
标题翻译：控制沉积在衬底上的III族氮化物膜的应力的方法
公开(公告)号：US09129977B2
公开(公告)日：2015-09-08
申请号：US13306763
申请日：2011-11-29
申请人： Hugues Marchand , Brendan J. Moran , Umesh K. Mishra , James S. Speck
发明人： Hugues Marchand , Brendan J. Moran , Umesh K. Mishra , James S. Speck
IPC分类号： H01L33/32 , H01L29/267 , H01L23/00 , C30B25/02 , C30B29/40 , H01L21/02 , H01L33/00 , H01L29/20 , H01L29/205 , H01L33/12
CPC分类号： H01L23/562 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02381 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205 , H01L33/0025 , H01L33/0066 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.
摘要翻译：公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断在供应。典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断在供应。

32. 发明授权

US08956896B2 Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices 有权
标题翻译：金属有机化学气相沉积（MOCVD）生长的高性能非极性III族氮化物光学器件
公开(公告)号：US08956896B2
公开(公告)日：2015-02-17
申请号：US13440087
申请日：2012-04-05
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitoshi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L21/36 , H01L33/00 , H01L21/00 , B82Y20/00 , H01L21/02 , H01S5/343
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译：一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

33. 发明授权

US08835200B2 High light extraction efficiency nitride based light emitting diode by surface roughening 有权
标题翻译：高光提取效率氮化物基发光二极管通过表面粗糙化
公开(公告)号：US08835200B2
公开(公告)日：2014-09-16
申请号：US13349342
申请日：2012-01-12
申请人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , Anurag Tyagi , Kenneth J. Vampola , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/32 , H01L21/02
CPC分类号： H01L33/22 , H01L21/02433 , H01L21/02458 , H01L33/0075 , H01L33/10 , H01L33/18 , H01L33/20 , H01L33/32 , H01L2933/0083
摘要： A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.
摘要翻译： III族氮化物发光二极管（LED）及其制造方法，其中LED的III族氮化物层的半极性或非极性面的至少一个表面被纹理化，从而形成纹理表面以增加光萃取。纹理可以通过等离子体辅助化学蚀刻，光刻，然后进行蚀刻或纳米压印，然后蚀刻来进行。

34. 发明授权

US08772758B2 Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al,Ga,In)N 有权
标题翻译：通过硅掺杂在非c面（Al，Ga，In）N上抑制倾斜缺陷形成和临界厚度增加
公开(公告)号：US08772758B2
公开(公告)日：2014-07-08
申请号：US13470598
申请日：2012-05-14
申请人： Matthew T. Hardy , Po Shan Hsu , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Matthew T. Hardy , Po Shan Hsu , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/06
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02513
摘要： A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.
摘要翻译：一种用于制造III族氮化物的半导体器件的方法，包括（a）在半极性或非极性GaN衬底上或之上生长一个或多个缓冲层，其中缓冲层是半极性或非极性III- 氮化物缓冲层; 并且（b）掺杂缓冲层，使得形成在掺杂缓冲层上或上方的III族氮化物器件层中的多个晶体缺陷不高于形成在一个或多个第一或第二晶体管上形成的III族氮化物器件层中的多个晶体缺陷更多未掺杂的缓冲层。掺杂可以减少或防止错配位错线的形成和额外的穿线位错。缓冲层的厚度和/或组成可以使得缓冲层的厚度接近或大于其缓解的临界厚度。此外，可以在缓冲层上或上方形成一个或多个（AlInGaN）或III族氮化物器件层。

35. 发明申请

US20140183579A1 MISCUT SEMIPOLAR OPTOELECTRONIC DEVICE 审中-公开
标题翻译： MISCUT SEMICOLAR OPTOELECTRONIC DEVICE
公开(公告)号：US20140183579A1
公开(公告)日：2014-07-03
申请号：US13732532
申请日：2013-01-02
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/18 , H01L33/00
CPC分类号： H01L33/0075 , H01L33/16
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。

36. 发明授权

US08641823B2 Reactor designs for use in ammonothermal growth of group-III nitride crystals 有权
标题翻译：用于III族氮化物晶体的氨热生长的反应器设计
公开(公告)号：US08641823B2
公开(公告)日：2014-02-04
申请号：US13128083
申请日：2009-11-04
申请人： Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
发明人： Siddha Pimputkar , Derrick S. Kamber , James S. Speck , Shuji Nakamura
IPC分类号： C30B7/10 , C30B29/40 , B01D9/00
CPC分类号： C30B7/105 , B01D9/0013 , B01D9/0031 , C30B7/10 , C30B29/40 , C30B29/403 , H01L21/67109 , Y10T117/1096 , Y10T428/24355
摘要： Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.
摘要翻译：用于III族氮化物晶体的氨热生长的反应器设计。内部加热用于增强和/或设计流体运动，气体混合以及在用于III族氮化物晶体的氨热生长的容器内产生溶解度梯度的能力。新型挡板设计用于控制和改进用于III族氮化物晶体的氨热生长的容器内的连续流体运动。

37. 发明授权

US08569085B2 Photoelectrochemical etching for chip shaping of light emitting diodes 有权
标题翻译：光电化学蚀刻用于发光二极管的芯片整形
公开(公告)号：US08569085B2
公开(公告)日：2013-10-29
申请号：US12576946
申请日：2009-10-09
申请人： Adele Tamboli , Evelyn L. Hu , James S. Speck
发明人： Adele Tamboli , Evelyn L. Hu , James S. Speck
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L33/20 , H01L33/0062 , H01L33/0079
摘要： A photoelectrochemical (PEC) etch is performed for chip shaping of a device comprised of a III-V semiconductor material, in order to extract light emitted into guided modes trapped in the III-V semiconductor material. The chip shaping involves varying an angle of incident light during the PEC etch to control an angle of the resulting sidewalls of the III-V semiconductor material. The sidewalls may be sloped as well as vertical, in order to scatter the guided modes out of the III-V semiconductor material rather than reflecting the guided modes back into the III-V semiconductor material. In addition to shaping the chip in order to extract light emitted into guided modes, the chip may be shaped to act as a lens, to focus its output light, or to direct its output light in a particular way.
摘要翻译：对由III-V族半导体材料构成的器件进行芯片成形，进行光电化学（PEC）蚀刻，以提取被发射到捕获在III-V半导体材料中的引导模式的光。芯片成形涉及在PEC蚀刻期间改变入射光的角度以控制III-V半导体材料的所得侧壁的角度。侧壁可以倾斜并且垂直，以便将导模散射出III-V族半导体材料，而不是将引导模式反射回III-V族半导体材料。除了对芯片进行成形以便将发射的光引导到引导模式之外，芯片可以被成形为用作透镜，聚焦其输出光或以特定方式引导其输出光。

38. 发明授权

US08465588B2 Ammonothermal method for growth of bulk gallium nitride 有权
标题翻译：用于生长大量氮化镓的恒温法
公开(公告)号：US08465588B2
公开(公告)日：2013-06-18
申请号：US13175739
申请日：2011-07-01
申请人： Christiane Poblenz , James S. Speck , Derrick S. Kamber
发明人： Christiane Poblenz , James S. Speck , Derrick S. Kamber
IPC分类号： C30B23/06
CPC分类号： C30B23/02 , C30B7/105 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02631 , H01L21/02642 , H01L21/02647 , Y10T156/10
摘要： A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.
摘要翻译：用于氨热GaN生长的高质量，大面积晶种及其制造方法。晶种包括在大面积衬底上的双面GaN生长。籽晶具有相对较低的缺陷密度，并且具有无弯曲的平坦表面。晶种可用于通过氨热生长方法生产大容量，高质量的体GaN晶体，用于最终晶片化成用于器件制造的大面积GaN衬底。

39. 发明授权

US08450192B2 Growth of planar, non-polar, group-III nitride films 有权
标题翻译：平面，非极性，III族氮化物薄膜的生长
公开(公告)号：US08450192B2
公开(公告)日：2013-05-28
申请号：US12207407
申请日：2008-09-09
申请人： Benjamin A. Haskell , Paul T. Fini , Shigemasa Matsuda , Michael D. Craven , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Benjamin A. Haskell , Paul T. Fini , Shigemasa Matsuda , Michael D. Craven , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/20 , H01L21/203
CPC分类号： C30B25/02 , C30B29/40 , C30B29/406 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02587 , H01L21/02609 , H01L21/0262
摘要： Growth methods for planar, non-polar, Group-III nitride films are described. The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.
摘要翻译：描述了平面，非极性，III族氮化物膜的生长方法。所得到的膜适合于通过各种生长技术的后续装置再生长。

40. 发明授权

US08357925B2 Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys 有权
标题翻译：基于非极性和半极性铝氮化铟和氮化铟镓合金的光电器件
公开(公告)号：US08357925B2
公开(公告)日：2013-01-22
申请号：US13300977
申请日：2011-11-21
申请人： Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Roy B. Chung , Zhen Chen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/3201 , H01S5/3211 , H01S5/34333
摘要： A high-power and high-efficiency light emitting device with emission wavelength (λpeak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.
摘要翻译：制造了发射波长（λpeak）范围从280nm到360nm的大功率和高效率发光器件。新器件结构使用在非极性或半极性体积GaN衬底上生长的非极性或半极性AlInN和AlInGaN合金。

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