会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 31. 发明授权
    • Flat panel display with thin film transistor
    • 带薄膜晶体管的平板显示器
    • US07187005B2
    • 2007-03-06
    • US10727222
    • 2003-12-04
    • Jae-Bon KooJi-Yong ParkHye-Dong KimUl-Ho Lee
    • Jae-Bon KooJi-Yong ParkHye-Dong KimUl-Ho Lee
    • H01L29/04H01L29/786
    • H01L27/1229H01L27/1214H01L27/1285H01L27/1296H01L27/3262H01L29/04H01L29/78675
    • A flat panel display lowering an on-current of a driving thin film transistor (TFT), maintaining high switching properties of a switching TFT, maintaining uniform brightness using the driving TFT, and maintaining a life span of a light emitting device while the same voltages are applied to the switching TFT and the driving TFT without changing a size of an active layer. The flat panel display has a light emitting device, a switching thin film transistor including a semiconductor active layer having at least a channel area for transferring a data signal to the light emitting device, and a driving thin film transistor including a semiconductor active layer having at least a channel area for driving the light emitting device so that a predetermined current flows through the light emitting device according to the data signal, the channel areas of the switching TFT and the driving TFT having different directions of current flow.
    • 降低驱动薄膜晶体管(TFT)的导通电流的平板显示器,保持开关TFT的高开关特性,使用驱动TFT保持均匀的亮度,并且在相同的电压下保持发光器件的使用寿命 施加到开关TFT和驱动TFT,而不改变有源层的尺寸。 平板显示器具有发光器件,开关薄膜晶体管,其包括至少具有用于将数据信号传送到发光器件的沟道区域的半导体有源层,以及包括半导体有源层的驱动薄膜晶体管,所述半导体有源层具有 至少一个用于驱动发光器件的通道区域,使得预定电流根据数据信号流过发光器件,开关TFT和具有不同电流方向的驱动TFT的沟道区域。
    • 37. 发明授权
    • Thin film transistor, method of manufacturing the thin film transistor and organic light emitting display device have the thin film transistor
    • 薄膜晶体管,制造薄膜晶体管的方法和有机发光显示装置具有薄膜晶体管
    • US08963214B2
    • 2015-02-24
    • US12892820
    • 2010-09-28
    • Roman KondratyukKi-Ju ImDong-Wook ParkYeon-Gon MoHye-Dong Kim
    • Roman KondratyukKi-Ju ImDong-Wook ParkYeon-Gon MoHye-Dong Kim
    • H01L27/148H01L29/786H01L27/12H01L27/32
    • H01L29/7869H01L27/1225H01L27/3262H01L29/78645H01L29/78696
    • A thin film transistor for an organic light emitting display device is disclosed. In one embodiment, the thin film transistor includes: a substrate, an active layer formed over the substrate, wherein the active layer is formed of an oxide semiconductor, a gate insulating layer formed over the substrate and the active layer, and source and drain electrodes formed on the gate insulating layer and electrically connected to the active layer. The transistor may further include a gate electrode formed on the gate insulating layer and formed between the source and drain electrodes, wherein the gate electrode is spaced apart from the source electrode so as to define a first offset region therebetween, and wherein the gate electrode is spaced apart from the drain electrode so as to define a second offset region therebetween. The transistor may further include a passivation layer formed on i) the gate insulating layer, ii) the source and drain electrodes and iii) the gate electrode; and at least one auxiliary gate electrode formed on the passivation layer, wherein at least a portion of the auxiliary gate electrode is located directly above the first and second offset regions.
    • 公开了一种用于有机发光显示装置的薄膜晶体管。 在一个实施例中,薄膜晶体管包括:衬底,在衬底上形成的有源层,其中有源层由氧化物半导体形成,栅极绝缘层形成在衬底和有源层上,以及源极和漏极 形成在栅绝缘层上并电连接到有源层。 晶体管还可以包括形成在栅极绝缘层上并形成在源电极和漏电极之间的栅电极,其中栅电极与源电极间隔开,以便在它们之间限定第一偏移区域,并且其中栅电极 与漏极间隔开,以便在它们之间限定第二偏移区域。 晶体管还可以包括在i)栅极绝缘层上形成的钝化层,ii)源极和漏极,以及iii)栅电极; 以及形成在所述钝化层上的至少一个辅助栅极电极,其中所述辅助栅电极的至少一部分位于所述第一和第二偏移区域的正上方。