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31. 发明授权

US07625670B2 Cathode material for secondary batteries with non-aqueous electrolyte, a process for preparing the cathode material and lithium secondary battery containing the same 有权
标题翻译：具有非水电解质的二次电池的阴极材料，用于制备正极材料的方法和含有它的锂二次电池
公开(公告)号：US07625670B2
公开(公告)日：2009-12-01
申请号：US11371595
申请日：2006-03-09
申请人： Young Ki Lee , Dong Hak Kwak , Hui Chan Yun , Jong Seob Kim
发明人： Young Ki Lee , Dong Hak Kwak , Hui Chan Yun , Jong Seob Kim
IPC分类号： H01M4/00 , H01M4/50 , H01M4/58
CPC分类号： H01M4/525 , H01M4/0471 , H01M4/0497 , H01M4/131 , H01M4/1391 , H01M4/364 , H01M4/485 , H01M4/505 , H01M4/56 , H01M10/052 , H01M2004/021
摘要： Provided are a cathode active material for a non-aqueous electrolyte lithium secondary battery, a process for preparing the same and a lithium secondary battery comprising the same. The cathode active material for a non-aqueous electrolyte lithium secondary battery is represented by the formula LiaNi1−(v+w+x+y+z)MnvCowMxM′yM″zO2 wherein M, M′ and M″ are independently selected from the group consisting of Al, Mg, Sr, Ca, P, Pb, Y and Zr, and mixtures thereof, a is in a range of 0.9 to 1.05, 1−(v+w+x+y+z) is in a range of 0.685 to 0.745, v is in a range of 0.05 to 0.06, w is in a range of 0.20 to 0.24, and x+y+z is in a range of 0.005 to 0.015.
摘要翻译：提供一种用于非水电解质锂二次电池的正极活性材料，其制备方法和包含该二次电池的锂二次电池。用于非水电解质锂二次电池的阴极活性材料由式LiNi1（v + w + x + y + z）MnvCowMxM'yM''zO2表示，其中M，M'和M“独立地选自由Al，Mg，Sr，Ca，P，Pb，Y和Zr组成的组及其混合物，a在0.9〜1.05的范围内，1-（v + w + x + y + z）范围为0.685〜0.745，v为0.05〜0.06的范围，w为0.20〜0.24，x + y + z为0.005〜0.015的范围。

32. 发明授权

US07514199B2 Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same 有权
标题翻译：用于抗蚀剂下层膜的硬掩模组合物和使用其的半导体集成电路器件的制造方法
公开(公告)号：US07514199B2
公开(公告)日：2009-04-07
申请号：US11507701
申请日：2006-08-22
申请人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
发明人： Dong Seon Uh , Chang Il Oh , Do Hyeon Kim , Hui Chan Yun , Jin Kuk Lee , Irina Nam , Jong Seob Kim
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/11 , G03F7/0752 , Y10S430/106 , Y10S430/111
摘要： Provided herein are hardmask compositions for resist underlayer films, wherein in some embodiments, the hardmask compositions include (a) a first polymer prepared by the reaction of a compound of Formula 1 wherein n is a number of 3 to 20, with a compound of Formula 2 (R)m—Si—(OCH3)4-m (2) wherein R is a monovalent organic group and m is 0, 1 or 2; (b) a second polymer that includes at least one of the structures represented by Formulae 3-6; (c) an acid or base catalyst; and (d) an organic solvent. Further provided herein are methods for producing a semiconductor integrated circuit device using a hardmask composition according to an embodiment of the present invention. In addition, provided herein are semiconductor integrated circuit devices produced by a method embodiment of the invention.
摘要翻译：本文提供了用于抗蚀剂下层膜的硬掩模组合物，其中在一些实施方案中，硬掩模组合物包括（a）通过其中n为3至20数的式1化合物与式1化合物的反应制备的第一聚合物 2 <？in-line-formula description =“In-line Formulas”end =“lead”？（R）m-Si-（OCH3）4-m（2）<？in-line-formula description =“In 线式“end =”tail“？>其中R是一价有机基团，m是0,1或2; （b）第二聚合物，其包含由式3-6表示的至少一种结构; （c）酸或碱催化剂; 和（d）有机溶剂。本文还提供了使用根据本发明实施例的硬掩模组合物制造半导体集成电路器件的方法。此外，本发明提供了通过本发明的方法实施例制造的半导体集成电路器件。

33. 发明授权

US07378217B2 Antireflective hardmask composition and methods for using same 有权
标题翻译：防反射硬掩模组合物及其使用方法
公开(公告)号：US07378217B2
公开(公告)日：2008-05-27
申请号：US11324950
申请日：2006-01-04
申请人： Chang Il Oh , Dong Seon Uh , Do Hyeon Kim , Jin Kuk Lee , Irina Nam , Hui Chan Yun , Jong Seob Kim
发明人： Chang Il Oh , Dong Seon Uh , Do Hyeon Kim , Jin Kuk Lee , Irina Nam , Hui Chan Yun , Jong Seob Kim
IPC分类号： G03C1/73 , G03C1/76 , G03F7/095
CPC分类号： G03F7/091
摘要： Hardmask compositions having antireflective properties useful in lithographic processes, methods of using the same, and semiconductor devices fabricated by such methods, are provided. Antireflective hardmask compositions of the invention include: (a) a polymer component including at least one polymer having a monomeric unit of Formula (I) wherein R1 and R2 may each independently be hydrogen, hydroxyl, alkyl, aryl, allyl, halo, or any combination thereof; R3 and R4 may each independently be hydrogen, a crosslinking functionality, a chromophore, or any combination thereof; R5 and R6 may each independently be hydrogen or an alkoxysilane group; R7 may each independently be hydrogen, alkyl, aryl, allyl, or any combination thereof; and n may be a positive integer; (b) a crosslinking component; and (c) an acid catalyst.
摘要翻译：提供了具有抗平滑印刷工艺中有用的抗反射性能的硬掩模组合物，其使用方法以及通过这些方法制造的半导体器件。本发明的抗反射硬掩模组合物包括：（a）包含至少一种具有式（I）的单体单元的聚合物的聚合物组分，其中R 1和R 2各自独立地是氢，羟基，烷基，芳基，烯丙基，卤素或其任何组合; R 3和R 4可各自独立地为氢，交联官能团，发色团或其任何组合; R 5和R 6可各自独立地为氢或烷氧基硅烷基; R 7可各自独立地为氢，烷基，芳基，烯丙基或其任何组合; n可以是正整数; （b）交联组分; 和（c）酸催化剂。

34. 发明申请

US20070224816A1 ORGANOSILANE HARDMASK COMPOSITIONS AND METHODS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME 有权
标题翻译：有机硅复合材料组合物及使用其制造半导体器件的方法
公开(公告)号：US20070224816A1
公开(公告)日：2007-09-27
申请号：US11608451
申请日：2006-12-08
申请人： Dong Seon Uh , Hui Chan Yun , Jin Kuk Lee , Chang Il Oh , Jong Seob Kim , Sang-Kyun Kim , Sang Hak Lim
发明人： Dong Seon Uh , Hui Chan Yun , Jin Kuk Lee , Chang Il Oh , Jong Seob Kim , Sang-Kyun Kim , Sang Hak Lim
IPC分类号： H01L21/302
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/11
摘要： Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I) Si(OR1)(OR2)(OR3)R4 wherein R1, R2 and R3 may each independently be alkyl acetoxy or oxime; and R4 may be hydrogen, alkyl, aryl or arylalkyl; and wherein the organosilane polymer has a polydispersity in a range of about 1.1 to about 2.
摘要翻译：本文提供的硬掩模组合物包括通过一种或多种式（I）化合物的反应制备的有机硅烷聚合物<？在线配方描述=“在线式”末端=“铅”→硅（或（OR 3）（OR 3）R 4＆lt;？in-line-formula description =“In 其中R 1，R 2和R 3可各自独立地为烷基乙酰氧基或肟;其中R 1，R 2和R 3各自独立地为烷基乙酰氧基或肟; 并且R 4可以是氢，烷基，芳基或芳基烷基; 并且其中所述有机硅烷聚合物的多分散性在约1.1至约2的范围内。

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