会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 32. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 半导体器件及其制造方法
    • US20080079086A1
    • 2008-04-03
    • US11831069
    • 2007-07-31
    • Hyung-suk JungJong-ho LeeSung-kee HanHo LeeHa-jin Lim
    • Hyung-suk JungJong-ho LeeSung-kee HanHo LeeHa-jin Lim
    • H01L21/336H01L27/085
    • H01L21/823807
    • A semiconductor device and a method of manufacturing the semiconductor device, in which the semiconductor device includes a semiconductor substrate in which PMOS transistor regions and NMOS transistor regions are formed, a PMOS transistor including P-type source and drain regions and a gate electrode, and an NMOS transistor formed on an Si channel region between N-type source and drain regions. The PMOS transistor is formed in each PMOS transistor region, and the gate electrode is formed on a high-dielectric gate insulating film formed on an SiGe channel region between the P-type source and drain regions. Further, the NMOS transistor includes a high-dielectric gate insulating film and a gate electrode formed on the gate insulating film, and the NMOS transistor is formed in each NMOS transistor region.
    • 一种半导体器件和半导体器件的制造方法,其中半导体器件包括其中形成有PMOS晶体管区域和NMOS晶体管区域的半导体衬底,包括P型源极和漏极区域的PMOS晶体管和栅极电极,以及 形成在N型源区和漏区之间的Si沟道区上的NMOS晶体管。 PMOS晶体管形成在每个PMOS晶体管区域中,并且栅电极形成在形成在P型源区和漏区之间的SiGe沟道区上的高电介质栅极绝缘膜上。 此外,NMOS晶体管包括高电介质栅极绝缘膜和形成在栅极绝缘膜上的栅电极,并且NMOS晶体管形成在每个NMOS晶体管区域中。
    • 36. 发明授权
    • Method for manufacturing thin film type solar cell
    • 制造薄膜型太阳能电池的方法
    • US08338221B2
    • 2012-12-25
    • US12628215
    • 2009-12-01
    • Chang Ho LeeHyung Dong KangHyun Ho LeeYong Hyun LeeSeon Myung Kim
    • Chang Ho LeeHyung Dong KangHyun Ho LeeYong Hyun LeeSeon Myung Kim
    • H01L21/00H01L29/04H01L29/10H01L31/00
    • H01L31/075H01L21/02532H01L21/02592H01L21/0262H01L31/03767H01L31/202Y02E10/548Y02P70/521
    • A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range between 1:7 and 1:10; a chamber pressure is maintained at a range between 2.0 Torr and 2.4 Torr; and a substrate temperature is maintained at a range between 225° C. and 250° C.
    • 公开了一种制造薄膜型太阳能电池的方法,其能够通过减少非晶硅中存在的悬挂键合位置或SiH 2键合位置的数量来减少太阳能电池的劣化,这是由于成分气体的最佳含量比,最佳 在通过等离子体CVD法沉积非晶硅的I型半导体层的工艺期间的腔室压力或最佳衬底温度,所述方法包括在衬底上形成前电极层; 在前电极层上依次沉积P型,I型和N型半导体层; 以及在所述N型半导体层上形成后电极层,其中所述形成所述I型半导体层的工艺包括通过等离子体CVD法在满足上述条件中的至少一个条件的情况下形成非晶硅层, 例如,含硅气体与含氢气体的含有比例在1:7〜1:10的范围内; 腔室压力保持在2.0托和2.4托之间的范围内; 并且衬底温度保持在225℃和250℃之间的范围内。
    • 39. 发明申请
    • DOOR OPENING/CLOSING DEVICE FOR ICE DISPENSER IN REFRIGERATOR
    • 冰箱分配器的开门/关闭装置
    • US20120017512A1
    • 2012-01-26
    • US12839892
    • 2010-07-20
    • Sang Ho LEEJin Sung ParkSo Yeon WonJin Ho Lee
    • Sang Ho LEEJin Sung ParkSo Yeon WonJin Ho Lee
    • E05F15/12
    • E05F15/614E05Y2800/71E05Y2900/20E05Y2900/31Y10T74/18792
    • A door opening/closing device for an ice dispenser is disclosed. The door opening/closing device includes a DC motor 1 which is rotated in forward and reverse directions, a 2-staged spur gear 3 meshed with a worm gear 2 installed on a driving shaft, a 3-staged spur gear 4 meshed with the 2-staged spur gear 3, and a fan-shaped output gear 5 meshed with the 3-staged spur gear 4 and rotated in forward and reverse directions by interconnection of the motor 1 and the gears 2, 3 and 4. If the output gear 5 is rotated in the forward direction, a rod-shaped boss 5a pushes and rotates a link lever 6a to press a coil spring 8 wound around an opening/closing link 6 and thus open a door 7. If the output gear 5 is rotated in the reverse direction, the coil spring 8 is released from a pressurized state, and the rod-shaped boss 5a rotates in the reverse direction while abutting against the link lever 6a, so that the door 7 is closed without generating impact and sound.
    • 公开了一种用于冰分配器的门打开/关闭装置。 门打开/关闭装置包括沿正反向旋转的直流电动机1,与安装在驱动轴上的蜗轮2啮合的2级正齿轮3,与2相啮合的3级正齿轮4 台阶正齿轮3和与3级正齿轮4啮合并通过电动机1和齿轮2,3和4的互连而沿正反方向旋转的扇形输出齿轮5。如果输出齿轮5 杆状凸台5a推动并旋转连杆杆6a以按压卷绕在打开/关闭杆6上的螺旋弹簧8,从而打开门7.如果输出齿轮5在 螺旋弹簧8从加压状态释放,并且杆状凸台5a在与连杆6a抵接的同时沿相反方向转动,使得门7关闭而不产生冲击和声音。