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31. 发明授权

US1791229A Respirating implement bag 失效
标题翻译：呼吸器袋
公开(公告)号：US1791229A
公开(公告)日：1931-02-03
申请号：US30985928
申请日：1928-10-02
申请人： HEINRICH STAMPE GERHARD KARL E
发明人： HEINRICH STAMPE GERHARD KARL E
IPC分类号： A62B19/00
CPC分类号： A62B19/00

32. 发明授权

US1388557A Snap-hook 失效
公开(公告)号：US1388557A
公开(公告)日：1921-08-23
申请号：US40545720
申请日：1920-08-23
申请人： GERHARD KARL F
发明人： GERHARD KARL F
IPC分类号： F16B45/04
CPC分类号： F16B45/04 , Y10T24/45398

33. 发明授权

US08846501B2 Method for equipping an epitaxy reactor 有权
标题翻译：装配外延反应堆的方法
公开(公告)号：US08846501B2
公开(公告)日：2014-09-30
申请号：US13378340
申请日：2010-06-08
申请人： Gerhard Karl Strauch
发明人： Gerhard Karl Strauch
IPC分类号： H01L21/20 , H01L21/28 , C30B25/08 , C30B35/00 , C23C16/44 , C23C16/52
CPC分类号： C30B25/08 , C23C16/4404 , C23C16/52 , C30B35/00
摘要： The invention relates to a method for equipping a process chamber in an apparatus for depositing at least one layer on a substrate held by a susceptor in the process chamber, process gases being introduced into the process chamber through a gas inlet element, in particular by means of a carrier gas, the process gases decomposing into decomposition products in the chamber, in particular on hot surfaces, the decomposition products comprising the components that form the layer. In order to improve the apparatus so that thick multi-layer structures can be deposited reproducibly in process steps that follow one another directly, it is proposed that a material is selected for the surface facing the process chamber at least of the wall of the process chamber that is opposite the susceptor, the optical reflectivity, optical absorptivity and optical transmissivity of which respectively correspond to those of the layer to be deposited during the layer growth.
摘要翻译：本发明涉及一种用于在处理室中装配处理室的方法，用于在处理室中由基座保持的基板上沉积至少一层，工艺气体通过气体入口元件被引入处理室，特别是通过装置的载气，所述工艺气体在室内分解成分解产物，特别是在热表面上，所述分解产物包含形成该层的组分。为了改进装置，使得厚的多层结构可以可再现地沉积在直接相互追随的工艺步骤中，因此提出了至少在处理室的壁上面向处理室的表面的材料被选择与感光体相对，光学反射率，光吸收率和光透射率分别对应于层生长期间要沉积的层的光学反射率。

34. 发明申请

US20130207762A1 CURRENT-COMPENSATED INDUCTOR WITH INCREASED LEAKAGE INDUCTANCE 审中-公开
标题翻译：具有增加的泄漏电感的电流补偿电感器
公开(公告)号：US20130207762A1
公开(公告)日：2013-08-15
申请号：US13820959
申请日：2011-09-06
申请人： Gerhard Karl , Herbert Maier
发明人： Gerhard Karl , Herbert Maier
IPC分类号： H01F3/12
CPC分类号： H01F3/12 , H01F17/06 , H01F38/08
摘要： Current compensated inductors have a substantially closed core, which deviates from the toroidal core design such that increased leakage flux is achieved and, at the same time, the further advantages of a conventional toroidal core geometry are maintained. In particular, the current-compensated inductors according to the invention can be produced efficiently by means of automation without subsequent process steps for fitting shunt elements being required.
摘要翻译：电流补偿电感器具有基本上闭合的磁芯，其偏离环形磁芯设计，使得实现增加的漏磁通，并且同时保持常规环形磁芯几何形状的进一步优点。特别地，根据本发明的电流补偿型电感器可以通过自动化而有效地生产，而无需后续的工艺步骤来安装需要的分流元件。

35. 发明申请

US20120263877A1 CVD Reactor Having Gas Inlet Zones that Run in a Strip-Like Manner and a Method for Deposition of a Layer on a Substrate in a CVD Reactor of this Kind 审中-公开
标题翻译：具有以类似方式运行的气体入口区域的CVD反应器以及该类型的CVD反应器中的基板上的层的沉积方法
公开(公告)号：US20120263877A1
公开(公告)日：2012-10-18
申请号：US13391561
申请日：2010-08-02
申请人： Gerhard Karl Strauch , Martin Dauelsberg
发明人： Gerhard Karl Strauch , Martin Dauelsberg
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4557 , C23C16/45574
摘要： The invention relates to a CVD reactor having a process chamber (1), the floor (3) of which is formed by a susceptor (2) for receiving substrates (4) to be coated with a layer and the ceiling (6) of which is formed by the underside of a gas inlet element (5) that has a multiplicity of gas inlet openings (13, 14) distributed uniformly over its entire surface, the gas inlet openings (13, 14) being divided into strip-like first and second gas inlet zones (11, 12) that run parallel to one another in a direction of extent, the gas inlet openings (13) of a first gas inlet zone (11) being connected to a common first process-gas feed line (9) for introducing a first process gas into the process chamber (1), the gas inlet openings (14) of a second gas inlet zone (12) being connected to a common first process-gas feed line (10), which is different from the first process-gas feed line (9), for introducing a second process gas into the process chamber (1), and the first and second gas inlet zones (11, 12) lying alternatingly alongside one another. The spacing (D) of a multiplicity of gas inlet openings (13, 14) of each gas inlet zone (11, 12) that lie side by side transverse to the direction of extent is to be approximately one quarter of the height (H) of the process chamber (1) and the width (W) of an individual gas inlet zone (11, 12) is to correspond approximately to the height (H).
摘要翻译：本发明涉及一种具有处理室（1）的CVD反应器，其底板（3）由接受器（2）形成，用于接收待涂覆层的基板（4），并且其上面由气体入口元件（5）的下侧形成，其具有在其整个表面上均匀分布的多个气体入口（13,14），所述气体入口开口（13,14）被分成条状和第二气体入口区域（11,12），其在一定程度上彼此平行地延伸，第一气体入口区域（11）的气体入口开口（13）连接到共同的第一处理气体供给管线（9）），用于将第一工艺气体引入所述处理室（1）中，所述第二气体入口区（12）的气体入口开口（14）连接到共同的第一处理气体供给管线（10）用于将第二处理气体引入处理室（1）的第一工艺气体供给管线（9），以及第一和第二气体入口区（11,12）交替地彼此交替。每个气体入口区域（11,12）的多个气体入口开口（13,14）的横向于横向方向的间隔（D）约为高度（H）的四分之一，处理室（1）的宽度（W）与各个气体入口区（11,12）的宽度（W）大致对应于高度（H）。

36. 发明授权

US07625448B2 Inlet system for an MOCVD reactor 有权
标题翻译：用于MOCVD反应器的入口系统
公开(公告)号：US07625448B2
公开(公告)日：2009-12-01
申请号：US10591906
申请日：2006-08-28
申请人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
发明人： Martin Dauelsberg , Martin Conor , Gerhard Karl Strauch , Johannes Kaeppeler
IPC分类号： C30B21/02
CPC分类号： C23C16/45568 , C30B25/14 , C30B29/40
摘要： The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.
摘要翻译：本发明涉及用于在处理室中的至少一个特别结晶的衬底上沉积特别是结晶层的器件，该器件包括用于接收衬底的顶部和垂直相对的加热底部。使用形成垂直叠加的气体导纳区域的气体导纳体分别引入至少一种第一和第二气态原料，所述原料在水平方向上以载气流过处理室。在气体导纳体的直接区域的导纳区域，气体流动均匀化，起始材料至少部分分解，形成在与导纳区域相邻的生长区域内沉积在基板上的分解物，在连续耗尽气流。为了减小导纳区域的水平延伸，气体导纳体的另外的气体导纳区域对于两种起始材料之一是必不可少的。

37. 发明申请

US20090283040A1 DEVICE FOR TEMPERATURE-CONTROLLED ACCOMMODATION OF A CONTAINER 审中-公开
标题翻译：集装箱温度控制装置
公开(公告)号：US20090283040A1
公开(公告)日：2009-11-19
申请号：US11722071
申请日：2005-12-06
申请人： Markus Reinhold , Gerhard Karl Strauch
发明人： Markus Reinhold , Gerhard Karl Strauch
IPC分类号： C23C16/54
CPC分类号： C23C14/228 , C23C14/22 , C23C16/4481
摘要： The invention relates to a device for the tempered storage of a container (19) for receiving condensed materials that are transported out of the container (19) by evaporation by means of a carrier gas guided through the container. Said device comprises a housing (3) forming a chamber (25), the wall (3) of said housing being embodied in a heat-insulating manner, a passage (20, 21) in the housing wall (3) for a gas supply line or gas evacuation line (17, 18) to, or from, the container (19) arranged in the chamber (25), and a heating (16) or cooling system for tempering the chamber (25). The invention is characterised in that a gas flow producer (4) and the gas flow guiding means (5-10) guiding the gas flow produced by the gas flow producer (4) are provided in the chamber (25), the gas flow produced by the gas flow producer and formed by the gas flow guiding means (5-10) being heated by the heating system (16) and flowing alongside the container (19).
摘要翻译：本发明涉及一种用于容器（19）的回火储存的装置，用于接收冷凝材料，所述冷凝材料通过通过所述容器引导的载体气体通过蒸发被输送出所述容器（19）。所述装置包括形成腔室（25）的壳体（3），所述壳体的壁（3）以绝热方式体现，所述壳体壁（3）中用于供气的通道（20,21）线路或排气管线（17,18）到设置在所述腔室（25）中的容器（19）或从所述腔室（25）中布置的容器（19），以及用于回火所述腔室（25）的加热（16）或冷却系统。本发明的特征在于，在室（25）中设置有气流生成器（4）和引导由气流发生器（4）产生的气流的气流引导装置（5-10），产生气流由气体流动产生器形成并由气体流动引导装置（5-10）形成，被加热系统（16）加热并沿着容器（19）流动。

38. 发明申请

US20090013930A1 GAS DISTRIBUTOR WITH PRE-CHAMBERS DISPOSED IN PLANES 有权
标题翻译：配有预处理池的气体分配器
公开(公告)号：US20090013930A1
公开(公告)日：2009-01-15
申请号：US11815091
申请日：2006-01-05
申请人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
发明人： Markus Reinhold , Peter Baumann , Gerhard Karl Strauch
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45574
摘要： A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (1,2) into each of which opens a feed pipe (3,4) for a process gas, each gas volume (1,2) being connected to a plurality of corresponding provess gas outlets (6,7) which open into the bottom (5) of the gas distributor. In order to increase the homogeneity if the gas composition, the two gas volumes (1,2) comprose pre-chambers (10, 10′, 11) located in a first common plane (8) and a plurality of gas distribution chambers (12, 13) each associated with a gas volume are provided in a second plane (9) adjacent to the bottom of the gas distributor. The pre-chambers (10, 10′, 11) and gas distribution chambers (12, 13) associated with each gas volume (1,2) are connected with connection channels (14, 15).
摘要翻译：用于CVD或OVPD反应器的气体分配器包括两个或更多个气体体积（1,2），每个气体容积（1,2）打开用于处理气体的进料管（3,4），每个气体体积（1,2）连接到多个对应的气体出口（6,7），其通向气体分配器的底部（5）。为了增加气体组成的均匀性，两个气体体积（1,2）包括位于第一公共平面（8）和多个气体分配室（12）中的预先室（10,10'，11），13）设置在与气体分配器的底部相邻的第二平面（9）中。与每个气体体积（1,2）相关联的前室（10,10'，11）和气体分配室（12,13）与连接通道（14,15）连接。

39. 发明授权

US07282096B2 Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon 失效
标题翻译：布置包括支撑体和基体保持器，其被旋转驱动并气体支撑在其上
公开(公告)号：US07282096B2
公开(公告)日：2007-10-16
申请号：US10722848
申请日：2003-11-26
申请人： Gerhard Karl Strauch
发明人： Gerhard Karl Strauch
IPC分类号： C23C16/00
CPC分类号： H01L21/67784 , C30B25/12 , H01L21/68785 , H01L21/68792
摘要： The invention relates to an arrangement comprising a support body with a substrate holder, mounted thereon on a gas bearing with rotating drive. The gas bearing and the rotating drive are formed by gas flowing in through nozzles arranged in the separating gaps between support body and substrate. The support body and the substrate holder are embodied as rings, whereby the rings lie on each other in a self-centering manner and the one ring comprises a ring bead extending into a ring recess on the other ring.
摘要翻译：本发明涉及一种包括具有衬底保持器的支撑体的装置，其安装在具有旋转驱动的气体轴承上。气体轴承和旋转驱动器由在布置在支撑体和基板之间的分离间隙中的喷嘴中流动的气体形成。支撑体和衬底保持器被实施为环，由此环以彼此定心的方式彼此并置，并且一个环包括延伸到另一个环上的环形凹部中的环形凸缘。

40. 发明授权

US07128785B2 Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates 有权
标题翻译：特别是将结晶层从气相沉积到特别是晶体基底上的方法
公开(公告)号：US07128785B2
公开(公告)日：2006-10-31
申请号：US10685233
申请日：2003-10-14
申请人： Johannes Kaeppeler , Michael Heuken , Rainer Beccard , Gerhard Karl Strauch
发明人： Johannes Kaeppeler , Michael Heuken , Rainer Beccard , Gerhard Karl Strauch
IPC分类号： C30B25/04
CPC分类号： C23C16/45574 , C23C16/301 , C23C16/4481 , C23C16/45565 , C23C16/45568 , C23C16/4584 , C30B25/02 , C30B25/12 , C30B25/14 , C30B29/403 , C30B29/406
摘要： The invention relates to a device and to a method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates. The device comprises a heated reaction chamber with a substrate support that receives at least one substrate; one or more heated sources where a gaseous halide is formed by chemical reaction of a halogen, especially HCl, fed to the source together with a substrate gas, and a metal, for example GA, In, Al associated with the source, which is transported through a gas inlet section to a substrate supported by the substrate support; and a hydride supply for supplying a hydride, especially NH3, AsH3 or PH3 into the reaction chamber. A plurality of rotationally driven substrate supports is disposed in an annular arrangement on a substrate support carrier, the sources being disposed in the center of said substrate carrier.
摘要翻译：本发明涉及一种用于将特别是结晶层从气相沉积到特别是晶体基底上的装置和方法。该装置包括具有接收至少一个基板的基板支撑件的加热反应室; 一个或多个加热源，其中通过与基底气体一起供给到源的卤素，特别是HCl的化学反应形成气态卤化物，以及金属，例如与源相关联的GA，In，Al，其被输送通过气体入口部分到由衬底支撑件支撑的衬底; 以及用于向反应室供应氢化物，特别是NH 3，AsH 3或PH 3的氢化物供应。多个旋转驱动的衬底支撑件以环形布置设置在衬底支撑载体上，所述源被布置在所述衬底载体的中心。

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