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31. 再颁专利

USRE38851E1 Shock absorbing arrangement for marine outboard drive 有权
标题翻译：海上舷外驱动器的减震装置
公开(公告)号：USRE38851E1
公开(公告)日：2005-10-25
申请号：US10227439
申请日：2002-08-22
申请人： Daisuke Nakamura
发明人： Daisuke Nakamura
IPC分类号： B63H20/10 , F02B61/04 , F15B15/14 , F16J1/00
CPC分类号： B63H20/10 , F05C2251/042 , F15B15/1447 , F15B15/149
摘要： A shock absorbing arrangement integrates in a compact manner into a fluid motor of a tilt cylinder, and consequently is particularly well suited for a small outboard drive that may only have a slimed tilt cylinder. The shock absorbing arrangement is provided in a piston for permitting flow from the first chamber to the second chamber upon the application of a predetermined force tending to cause the outboard drive to tilt-up. The shock-absorbing mechanism comprises a check valve assembly accommodated in a hollow space that is formed in the piston and is closed by a plug attached to the piston. A piston rod extends through the first chamber from the piston and is separately formed with the piston. The piston rod includes a passage that communicates with the hollow formed in the piston. A diameter of the passage provided in the piston rod is larger than the diameter of a valve seat for the check valve assembly in order to reduce fluid friction loss across the shock-absorbing valve assembly.
摘要翻译：减震装置以紧凑的方式集成到倾斜缸的流体马达中，因此特别适用于只能具有倾斜倾斜缸的小型外侧驱动器。冲击吸收装置设置在活塞中，用于允许在施加预定的力以使外侧驱动器向上倾斜时从第一腔室流到第二腔室。减震机构包括容纳在中空空间中的止回阀组件，其形成在活塞中并且由附接到活塞的塞子封闭。活塞杆从活塞延伸穿过第一室，并与活塞分开形成。活塞杆包括与形成在活塞中的中空连通的通道。设置在活塞杆中的通道的直径大于用于止回阀组件的阀座的直径，以便减少穿过减震阀组件的流体摩擦损失。

32. 发明申请

US20050211156A1 METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL FROM DISLOCATION CONTROL SEED CRYSTAL 有权
标题翻译：从偏心控制晶体晶体制造碳化硅单晶的方法
公开(公告)号：US20050211156A1
公开(公告)日：2005-09-29
申请号：US10911745
申请日：2004-08-05
申请人： Itaru Gunjishima , Daisuke Nakamura , Naohiro Sugiyama , Fusao Hirose
发明人： Itaru Gunjishima , Daisuke Nakamura , Naohiro Sugiyama , Fusao Hirose
IPC分类号： C30B29/38 , C30B1/00 , C30B23/00 , C30B29/36
CPC分类号： C30B29/36 , C30B23/00 , Y10S117/902 , Y10S117/912
摘要： A method for manufacturing a silicon carbide single crystal includes the steps of: preparing a seed crystal with a screw dislocation generation region; and growing the single crystal on a growth surface of the seed crystal. The generation region occupies equal to or smaller than 50% of the growth surface, which has an offset angle equal to or smaller than 60 degrees. The screw dislocation density in the single crystal generated from the generation region is higher than that in the other region. The single crystal includes a flat C-surface facet disposed on a growing surface of the single crystal. The C-surface facet overlaps at least one of parts of the growing surface provided by projecting the generation region in a direction perpendicular to the growth surface and in a direction parallel to a axis, respectively.
摘要翻译：制造碳化硅单晶的方法包括以下步骤：用螺旋位错产生区制备晶种; 并在晶种的生长表面上生长单晶。生成区域占据生长面的50％以下，其具有等于或小于60度的偏移角。从发生区域产生的单晶中的螺旋位错密度高于其他区域中的螺旋位错密度。单晶包括设置在单晶生长表面上的平坦C面小面。 C面表面与生长表面的至少一部分重叠，所述至少一部分通过在与生长表面垂直的方向上并且在平行于<0001轴的方向分别投影生成区域而提供。

33. 发明申请

US20050168110A1 Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator 有权
公开(公告)号：US20050168110A1
公开(公告)日：2005-08-04
申请号：US11094622
申请日：2005-03-30
申请人： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
发明人： Hajime Yamada , Masaki Takeuchi , Hideki Kawamura , Hiroyuki Fujino , Yukio Yoshino , Ken-ichi Uesaka , Tadashi Nomura , Daisuke Nakamura , Yoshimitsu Ushimi , Takashi Hayashi
IPC分类号： H03H3/02 , H03H3/04 , H03H9/02 , H03H9/10 , H03H9/17 , H03H9/56 , H01L41/08
CPC分类号： H03H9/174 , C23C14/10 , C23C14/35 , H03H3/02 , H03H3/04 , H03H9/02133 , H03H9/02149 , H03H9/173 , H03H9/564 , H03H9/568 , H04R17/00 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要： A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2 and Al2O3, respectively, Al2O3 having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.

34. 发明授权

US06922339B2 Heat dissipating structure of printed circuit board and fabricating method thereof 失效
标题翻译：印刷电路板的散热结构及其制造方法
公开(公告)号：US06922339B2
公开(公告)日：2005-07-26
申请号：US10722163
申请日：2003-11-25
申请人： Daisuke Nakamura , Takeshi Aota
发明人： Daisuke Nakamura , Takeshi Aota
IPC分类号： H05K7/20 , H01L23/12 , H01L23/36 , H01L23/367 , H01L23/40 , H05K1/02 , H05K3/40
CPC分类号： H05K1/0204 , H01L23/3677 , H01L2224/16225 , H01L2224/48227 , H01L2224/48465 , H01L2924/00014 , H05K3/4046 , H05K2201/10166 , H05K2201/10416 , H05K2203/0191 , H01L2924/00 , H01L2224/0401
摘要： A heat dissipating structure of a printed circuit board on which a circuit pattern is provided so that a heat generating part can be mounted, and which has a through hole formed at a site where the heat generating part is mounted from a surface on which the heat generating part is mounted to the opposite surface. A heat dissipating member made of a material with a thermal conductivity higher than a board of the printed circuit board, and having a shape worked so that the heat dissipating member can be inserted into the through hole is mounted in the through hole with an adhesive interposed therebetween. Heat generated from a heat generating part is transferred by way of a heat dissipating member to as far as a conductor of the GND surface or heat dissipating fins.
摘要翻译：一种印刷电路板的散热结构，其上设置电路图案，以便可以安装发热部件，并且在其上安装有发热部件的位置处的通孔，该通孔形成在其上，产生部件安装到相对的表面。由导热率高于印刷电路板的板材的材料制成的散热构件，并且具有加热使得散热构件能够插入到通孔中的形状的散热构件安装在通孔中，之间。从发热部产生的热量通过散热部件传递到GND表面的导体或散热片。

35. 发明授权

US06890600B2 SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device 有权
标题翻译： SiC单晶，SiC单晶的制造方法，具有外延膜的SiC晶片，具有外延膜的SiC晶片的制造方法以及SiC电子器件
公开(公告)号：US06890600B2
公开(公告)日：2005-05-10
申请号：US10268103
申请日：2002-10-10
申请人： Daisuke Nakamura , Tadashi Ito , Hiroyuki Kondo , Masami Naito
发明人： Daisuke Nakamura , Tadashi Ito , Hiroyuki Kondo , Masami Naito
IPC分类号： C30B23/00 , C30B25/00 , C30B25/20 , C30B33/00 , C30B25/02 , C30B25/04 , C01B33/26
CPC分类号： C30B25/00 , C30B23/00 , C30B25/20 , C30B29/36 , C30B33/00 , H01L2924/0002 , H01L2924/00
摘要： A refined SiC single crystal that includes a small number of defects is provided as follows. At a first growth step, a first seed crystal is formed from a crude SiC single crystal, and a first grown crystal is formed on a first growth surface, which is a plane having an inclination of 20 degrees or smaller from a {1-100} plane or an inclination of 20 degrees or smaller from a {11-20} plane. At an intermediate growth step, an n growth crystal is formed on an n growth surface, which is a plane having an inclination of 45 to 90 degrees from an (n−1) growth surface and an inclination of 60 to 90 degrees from a {0001} plane. At a final growth step, a final SiC single crystal is formed on a final growth surface, which has an inclination of 20 degrees or smaller from a {0001} plane.
摘要翻译：包括少量缺陷的精制SiC单晶如下。在第一生长步骤中，由粗SiC单晶形成第一晶种，并且第一生长晶体形成在第一生长表面上，该第一生长表面是从{1-100的倾斜度为20度或更小的平面 }平面或从{11-20}平面的20度或更小的倾斜度。在中间生长步骤中，n生长晶体形成在n生长表面上，n生长表面是从（n-1）生长表面倾斜45度至90度的平面，并且从{ 0001}平面。在最终生长步骤中，在最终生长表面上形成最终的SiC单晶，其从{0001}面具有20度或更小的倾斜度。

36. 发明授权

US06786969B2 Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal 有权
标题翻译：用于生产单晶的方法和装置，用于生长单晶的衬底和用于单晶加热的方法
公开(公告)号：US06786969B2
公开(公告)日：2004-09-07
申请号：US10024471
申请日：2001-12-21
申请人： Hiroyuki Kondo , Emi Oguri , Fusao Hirose , Daisuke Nakamura , Atsuto Okamoto , Naohiro Sugiyama
发明人： Hiroyuki Kondo , Emi Oguri , Fusao Hirose , Daisuke Nakamura , Atsuto Okamoto , Naohiro Sugiyama
IPC分类号： C30B3500
CPC分类号： C30B23/00 , C30B23/002 , C30B29/36 , Y10T117/10
摘要： It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front surface of the SiC seed crystal to grow an SiC single crystal. In this sublimation-recrystallization method, a protection layer is provided on a back surface of the SiC seed crystal. The SiC seed crystal is mechanically supported by a supporting part disposed on the graphite crucible without bonding. Thereby, it is possible to improve the thermal maldistribution on the back surface of the SiC seed crystal and possible to suppress damage of the protection layer due to the thermal maldistribution. Thus, macroscopic defects in the grown SiC single crystal are preferably suppressed.
摘要翻译：本发明的目的是防止SiC单晶的生产中的宏观缺陷。将SiC源材料粉末和SiC晶种设置在石墨坩埚内，并且将SiC源材料粉末在SiC晶种的前表面上热升华并重结晶以生长SiC单晶。在该升华重结晶方法中，在SiC晶种的背面设置有保护层。 SiC晶种由不被粘合而设置在石墨坩埚上的支撑部分机械地支撑。由此，可以提高SiC晶种的背面的热分散，并且可以抑制由于热分散而导致的保护层的损伤。因此，优选抑制生长的SiC单晶中的宏观缺陷。

37. 发明授权

US06613940B1 Method for catalytic gas phase oxidation 失效
标题翻译：催化气相氧化方法
公开(公告)号：US06613940B1
公开(公告)日：2003-09-02
申请号：US09648950
申请日：2000-08-25
申请人： Takeshi Nishimura , Masakatsu Mori , Masatsugu Kitaura , Osamu Dodo , Daisuke Nakamura
发明人： Takeshi Nishimura , Masakatsu Mori , Masatsugu Kitaura , Osamu Dodo , Daisuke Nakamura
IPC分类号： C07C5116
CPC分类号： B01J8/008 , B01J8/067 , B01J2208/00212 , B01J2208/00221 , B01J2208/00256 , C07C45/35 , C07C51/215 , C07C51/252 , C07C51/255 , C07C51/265 , C07C47/22 , C07C57/145 , C07C63/16 , C07C57/02
摘要： In the reaction of catalytic gas phase oxidation by means of a shell-and-tube type reactor adapted to circulate a heating medium to the shell of the reactor through the medium of a circulation device connecting an annular conduit connected thereto, a method for the catalytic gas phase oxidation characterized by subjecting a part of the heating medium extracted from the shell of the reactor to heat exchange, introducing the heating medium resulting from the heat exchange into the proximity of a heating medium circulation inlet on the inlet side of the circulation device or the annular conduit on the outlet side of the reactor. The flow rate of the heating medium after the heat exchange is preferred to be in the range of 2-40 vol. % based on the flow rate of the heating medium within the shell of the reactor and the temperature difference of the heating medium at the inlet and the outlet to be in the range of 15-150° C. According to this invention, it is made possible to reduce evenly the hot spots in the reaction tubes, improve the yield of the product aimed at, and implement a reaction of catalytic gas phase oxidation of propylene or isobutylene.
摘要翻译：在通过壳管式反应器进行催化气相氧化的反应中，该反应器适于通过连接连接其的环形导管的循环装置的介质将加热介质循环到反应器的壳体，催化剂的方法气相氧化特征在于使从反应器壳体中提取的一部分加热介质进行热交换，将由热交换产生的加热介质引入循环装置入口侧的加热介质循环入口附近，或反应器出口侧的环形导管。热交换后的加热介质的流量优选为2-40体积％。基于反应器壳体内的加热介质的流量，入口和出口处的加热介质的温度差在15-150℃的范围内。根据本发明，制成可能均匀地减少反应管中的热点，提高目标产品的产率，并实现丙烯或异丁烯的催化气相氧化反应。

38. 发明授权

US06344568B1 Catalyst for gas phase partial oxidation 有权
标题翻译：催化剂用于气相部分氧化
公开(公告)号：US06344568B1
公开(公告)日：2002-02-05
申请号：US09378148
申请日：1999-08-20
申请人： Masaaki Okuno , Hiromi Yunoki , Yasushi Kiyooka , Daisuke Nakamura , Michio Tanimoto , Tsukasa Takahashi
发明人： Masaaki Okuno , Hiromi Yunoki , Yasushi Kiyooka , Daisuke Nakamura , Michio Tanimoto , Tsukasa Takahashi
IPC分类号： C07D30733
CPC分类号： C07C51/313 , B01J23/22 , B01J23/8877 , B01J37/06 , B01J2523/00 , C07C51/265 , C07C63/16 , C07C63/313 , C07C57/145 , B01J2523/17 , B01J2523/55 , B01J2523/68 , B01J2523/69 , B01J2523/31 , B01J2523/41 , B01J2523/47 , B01J2523/48 , B01J2523/53 , B01J2523/18 , B01J2523/51 , B01J2523/3712 , B01J2523/56 , B01J2523/12 , B01J2523/23
摘要： This invention relates to a method for producing a partially oxidized organic compound, e.g., an unsaturated aldehyde/carboxylic acid having three or more carbon atoms, or an organic acid anhydride/nitrile compound having four or more carbon atoms. This method requires a catalyst prepared by treating a carrier in such a manner that water used in the treatment achieves specific resistance.
摘要翻译：本发明涉及一种生产部分氧化的有机化合物，例如具有三个或更多个碳原子的不饱和醛/羧酸或具有四个或更多个碳原子的有机酸酐/腈化合物的方法。该方法需要通过以使处理中使用的水达到电阻率的方式处理载体而制备的催化剂。

39. 发明授权

US06174211B1 Tiller lock for outboard motor 有权
标题翻译：舷外电机的舵锁
公开(公告)号：US06174211B1
公开(公告)日：2001-01-16
申请号：US09368974
申请日：1999-08-05
申请人： Daisuke Nakamura
发明人： Daisuke Nakamura
IPC分类号： B63H2008
CPC分类号： B63H21/265 , B63H25/34 , F02B61/045
摘要： An outboard motor has a tiller lock which retains the rotational orientation of the outboard motor relative to a watercraft. The tiller lock allows the motor to be pivoted about a substantially horizontal tilt and trim axis while the tiller lock is engaged. The tiller lock includes a friction track advantageously arranged rearward of the tilt and trim axis. The positioning of the friction track protects the it from damage due to inadvertent contact with other components of the outboard motor mounting assembly. In particular, the friction track is protected throughout a full range of motion of the outboard motor. In addition, a pair of opposing brake members are alternately engageable with the friction track to secure the motor in a desired orientation. A bi-directional actuator handle urges either of the brake members into the friction plate independent of the other brake member to create a locking drag force which accompanies a substantially normal compressive force.
摘要翻译：舷外马达具有舵锁，其保持舷外马达相对于船只的旋转定向。耕耘机锁定允许电动机围绕大致水平的倾斜和调整轴线枢转，同时耕耘机锁定接合。耕耘机锁包括有利地布置在倾斜和调整轴线后面的摩擦轨迹。摩擦履带的定位可以防止由于与舷外马达安装组件的其他部件的意外接触而造成的损坏。特别地，摩擦轨道在舷外马达的整个运动范围内被保护。此外，一对相对的制动构件可以与摩擦轨迹交替地接合，以将电动机固定在期望的方位。双向致动器手柄将任一个制动构件推到摩擦片中，与另一个制动构件无关，以产生伴随基本正常的压缩力的锁定牵引力。

40. 发明授权

US6042434A Hydraulic tilt and trim unit for marine drive 失效
标题翻译：用于船用驱动的液压倾斜和装饰单元
公开(公告)号：US6042434A
公开(公告)日：2000-03-28
申请号：US999210
申请日：1997-12-29
申请人： Daisuke Nakamura
发明人： Daisuke Nakamura
IPC分类号： B63H20/08 , B63H20/10 , F02B61/04 , B63H5/125
CPC分类号： B63H20/10
摘要： An improved hydraulic circuit for a tilt and trim adjustment system allows an associated marine drive to be trimmed up into a tilt range for running in shallow water. The circuit includes a tilt relief valve. The valve differentiates between the hydraulic pressures within the system caused by various running conditions, and opens the valve only when two conditions are met: (i) the associated pump is activated and (ii) high pressure exists at the valve's inlet side, which usually occurs when running at high speeds. The valve, however, remains closed at slower speeds. The marine drive thus can be raised up and operated within the tilt range, provided that the speed is slow enough.
摘要翻译：用于倾斜和调整调整系统的改进的液压回路允许将相关联的船用驱动器修剪成倾斜范围，以在浅水中运行。电路包括倾斜安全阀。阀门可以区分不同运行条件下系统内的液压压力，只有满足两个条件才打开阀门：（i）相关的泵被激活，（ii）阀门入口侧存在高压，通常发生在高速运行时。然而，阀门以较慢的速度保持关闭。因此，只要速度足够慢，船舶驱动器可以在倾斜范围内升高和操作。

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