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21. 发明申请

US20060124050A1 Method of manufacturing doped superconducting materials 有权
标题翻译：掺杂超导材料的制造方法
公开(公告)号：US20060124050A1
公开(公告)日：2006-06-15
申请号：US10560284
申请日：2004-06-07
申请人： Colin Tarrant , Kelvin Schneider , David Cardwell , Nadendla Babu
发明人： Colin Tarrant , Kelvin Schneider , David Cardwell , Nadendla Babu
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/225 , C30B9/00 , C30B17/00 , C30B29/22 , Y10S505/781
摘要： The invention provides a method of manufacturing a doped i X—Ba—Cu-0 material, the method comprising the steps of: a) mixing an X—Ba-L-0 or X—Ba—Cu-L-0 material with an X-1 Ba—Cu—O material; and b) crystallising the mixture; 1 wherein each X is independently selected from a rare earth (Group IIIB) element, yttrium, a combination of rare earth elements, or a combination of yttrium and a rare earth element; and L is selected from U, Nb, Ta, Mo, W, Zr, Hf, Ag, Pt, Ru and Sn. The invention further provides a doped material manufactured by the method of the invention.
摘要翻译：本发明提供一种制造掺杂的i X-Ba-Cu-O材料的方法，该方法包括以下步骤：a）将X-Ba-L-0或X-Ba-Cu-L-O材料与 X-1 Ba-Cu-O材料; 和b）使混合物结晶; 1，其中每个X独立地选自稀土（IIIB）族元素，钇，稀土元素的组合，或钇和稀土元素的组合; L选自U，Nb，Ta，Mo，W，Zr，Hf，Ag，Pt，Ru和Sn。本发明还提供通过本发明的方法制造的掺杂材料。

22. 发明申请

US20060112872A1 Method for crystallising a melamine melt 失效
标题翻译：三聚氰胺熔体结晶方法
公开(公告)号：US20060112872A1
公开(公告)日：2006-06-01
申请号：US10541796
申请日：2004-01-28
申请人： Tjay Tjioe
发明人： Tjay Tjioe
IPC分类号： C30B15/00 , C30B27/02 , C30B21/06 , C30B28/10 , C30B30/04
CPC分类号： B01J19/06 , C07D251/60 , C07D251/62
摘要： Method for crystallising a melamine melt to form melamine particles with a D90 of at most 2 mm by cooling a melamine melt to below the crystallisation temperature of the melamine, comprising the formation of a suspension of melamine particles in the cooling medium by spraying the melamine melt with at most 10 wt % of CO2 relative to the sprayed quantity of melamine melt in a space in which a layer of a liquid cooling medium is present that has a temperature below the crystallisation temperature of the melamine and under cooling conditions at which at least 50 wt % of the sprayed melamine melt directly turns into suspended melamine particles. Method for the production of melamine from urea in a preferably continuous, high-pressure process, with application of the present method for the crystallisation.
摘要翻译：通过将三聚氰胺熔体冷却至低于三聚氰胺的结晶温度来形成三聚氰胺熔体悬浮液的方法，该方法用于使三聚氰胺熔体结晶以形成至多2mm的三聚氰胺颗粒，其中D 3 < 所述冷却介质通过相对于在存在液体冷却介质层的空间中相对于三聚氰胺熔体的喷射量喷射至多10重量％的CO 3的三聚氰胺熔体，其具有温度低于三聚氰胺的结晶温度，并且在至少50wt％喷雾的三聚氰胺熔体直接变成悬浮的三聚氰胺颗粒的冷却条件下。在优选连续的高压过程中由尿素生产三聚氰胺的方法，应用本方法进行结晶。

23. 发明申请

US20060107889A1 Apparatus and method for producing single crystal, and silicon single crystal 有权
标题翻译：单晶和硅单晶的制造方法
公开(公告)号：US20060107889A1
公开(公告)日：2006-05-25
申请号：US11131333
申请日：2005-05-18
申请人： Norihito Fukatsu , Kazuyuki Egashira , Senrin Fu
发明人： Norihito Fukatsu , Kazuyuki Egashira , Senrin Fu
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/00 , C30B15/305 , Y10S117/917
摘要： The invention provides an apparatus for producing a single crystal, and a method for producing a silicon single crystal using the same. An apparatus for producing a single crystal includes a heating device which heats polycrystalline silicon raw material held in a crucible to form silicon melt, and a pulling up device which grows a silicon single crystal while pulling it up from the silicon melt accompanied with rotation. By providing the apparatus with a magnetic field generation unit which applies to the silicon melt a cusp magnetic field a shape of neutral plane of which is symmetric around the rotation axis of the silicon single crystal and is curved in the upward direction, various conditions for producing a silicon single crystal having a defect free region is relaxed, and a silicon single crystal having a defect free region is produced at high efficiency.
摘要翻译：本发明提供一种用于制造单晶的装置，以及使用该单晶的硅单晶的制造方法。单晶体的制造装置包括加热保持在坩埚中的多晶硅原料以形成硅熔体的加热装置，以及伴随旋转从硅熔体中拉出硅单晶的提拉装置。通过向该装置提供磁场产生单元，该磁场产生单元向硅熔体施加尖角磁场，其中性平面的形状围绕单晶的旋转轴对称并且在向上方向上弯曲，生成的各种条件具有无缺陷区域的硅单晶被松弛，并且以高效率产生具有无缺陷区域的硅单晶。

24. 发明申请

US20060070569A1 Roll crusher to produce high purity polycrystalline silicon chips 有权
标题翻译：辊式破碎机生产高纯度多晶硅片
公开(公告)号：US20060070569A1
公开(公告)日：2006-04-06
申请号：US11231058
申请日：2005-09-20
申请人： Douglas Andrejewski , Thomas Dubay , Terence Horstman , Roger Spencer
发明人： Douglas Andrejewski , Thomas Dubay , Terence Horstman , Roger Spencer
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C01B33/02 , B02C4/12 , B02C4/30 , C30B15/00 , C30B29/06 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： A single roll crusher for comminuting high purity materials includes a roll with teeth spaced around the circumference of the roll. The roll is rotatably mounted inside a housing. The housing has a top with an entrance port, sides, and bottom with an exit port. The roll, teeth, and at least the inside surfaces of the top, sides, and bottom are fabricated from a material of construction that minimizes contamination of silicon. The material of construction may be tungsten carbide with a cobalt binder. The single roll crusher is used for processing polycrystalline silicon.
摘要翻译：用于粉碎高纯度材料的单辊破碎机包括具有围绕辊的圆周间隔开的齿的辊。卷可旋转地安装在壳体内。外壳有一个顶部，有一个入口端口，两侧和底部有一个出口。顶部，侧面和底部的辊，齿和至少内表面由最小化硅污染的结构材料制成。构造材料可以是具有钴粘合剂的碳化钨。单辊破碎机用于加工多晶硅。

25. 发明申请

US20060065184A1 Process for producing p doped silicon single crystal and p doped n type silicon single crystal wafer 有权
标题翻译：制造p掺杂硅单晶和p掺杂n型硅单晶晶片的工艺
公开(公告)号：US20060065184A1
公开(公告)日：2006-03-30
申请号：US10538878
申请日：2003-12-25
申请人： Masahiro Sakurada , Izumi Fusegawa
发明人： Masahiro Sakurada , Izumi Fusegawa
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/203 , C30B15/04 , C30B29/06
摘要： The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al (aluminum) concentration is 2×1012 atoms/cc or more. Thereby, there can be provided a method of easily and inexpensively producing a P(phosphorus)-doped silicon single crystal of defect-free region having an excellent capability of electrical characteristics to be high breakdown voltage, which contains neither, for example, V region, OSF region, nor large dislocation cluster (LSEPD, LFPD) region.
摘要翻译：本发明是通过Czochralski法制备P（磷）掺杂硅单晶的方法，其中至少进行单晶的生长使得Al（铝）浓度为2×10 12， / SUP> atoms / cc以上。因此，可以提供一种容易且廉价地制造具有优异的电特性能力高的无缺陷区域的P（磷）掺杂硅单晶为高的击穿电压的方法，其既不含V区，OSF区域，也不是大型位错簇（LSEPD，LFPD）区域。

26. 发明申请

US20060054081A1 Rotationally-vibrated unidirectional solidification crystal growth system and its method 失效
标题翻译：旋转振动单向凝固晶体生长系统及其方法
公开(公告)号：US20060054081A1
公开(公告)日：2006-03-16
申请号：US10941497
申请日：2004-09-15
申请人： Chune-Wen Lan , Wan-Chin Yu
发明人： Chune-Wen Lan , Wan-Chin Yu
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B11/00
CPC分类号： C30B29/30 , C30B11/008 , C30B29/22 , C30B29/40 , C30B29/52 , Y10T117/10 , Y10T117/1068 , Y10T117/1084
摘要： A rotationally-vibrated unidirectional solidification crystal growth system comprises a furnace, a crucible, a rotational-vibration device including a mounting holder, a motor and a vibrating apparatus. The furnace contains a high temperature portion, a thermal isolation portion and a low temperature portion. The crucible connected to the rotational-vibration device within the furnace has a seed well down to a crystal growth arena. The crystal is grown as the ambient temperature profile moving from high to low, which can be achieved through a relative movement between the furnace and the crucible. That is either the furnace or the crucible is undergoing a top-down movement. The rotational-vibration device offers the crucible the required rotation and angular vibration, with a vibrating frequency no less than 0.2 Hz.
摘要翻译：旋转振动的单向凝固晶体生长系统包括炉，坩埚，包括安装保持器的旋转振动装置，电动机和振动装置。该炉包含高温部分，热隔离部分和低温部分。连接到炉内的旋转振动装置的坩埚具有晶种直到晶体生长场。当环境温度曲线从高到低移动时，晶体生长，这可以通过炉和坩埚之间的相对运动来实现。这是炉子还是坩埚正在经历自上而下的运动。旋转振动装置为坩埚提供所需的旋转和角振动，振动频率不小于0.2Hz。

27. 发明申请

US20060005762A1 Method for producing silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US20060005762A1
公开(公告)日：2006-01-12
申请号：US10533147
申请日：2003-10-31
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/00 , C30B21/06 , C30B23/00 , C30B30/04 , C30B27/02
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region α2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. Further, the present invention is to produce a silicon wafer wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region β1, and the heat treatment condition of the silicon crystal and the oxygen concentration in the silicon crystal are controlled so that no OSF nuclei grow to OSFs. Moreover, the present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that they fall in the vicinity of the lower limit line LN3 within the epitaxial defect-free region α1.
摘要翻译：本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制，使得硅晶体中的硼浓度不低于1×10 18原子/ cm 3，并且生长条件V / G落在外延无缺陷区域α2N中，其下限线LN1是表示生长速率V逐渐下降的线硼浓度增加。此外，本发明是为了制造硅晶片，其中硅晶体中的硼浓度和生长条件V / G被控制为至少包括外延缺陷区β1，并且控制硅晶体的热处理条件和硅晶体中的氧浓度，使得OSF核不生长到OSF。此外，本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制为使得它们落入外延缺陷区域内的下限线LN3附近， SUB> 1 。

28. 发明申请

US20060000408A1 Inorganic scintillator and process for its fabrication 失效
标题翻译：无机闪烁体及其制造工艺
公开(公告)号：US20060000408A1
公开(公告)日：2006-01-05
申请号：US11154824
申请日：2005-06-17
申请人： Kazuhisa Kurashige , Naoaki Shimura , Hiroyuki Ishibashi , Keiji Sumiya , Tatsuya Usui , Shigenori Shimizu
发明人： Kazuhisa Kurashige , Naoaki Shimura , Hiroyuki Ishibashi , Keiji Sumiya , Tatsuya Usui , Shigenori Shimizu
IPC分类号： C30B15/00 , C09K11/08 , C30B21/06 , C30B28/10 , C30B30/04
CPC分类号： C30B15/00 , C09K11/7774 , C30B29/22
摘要： The inorganic scintillator of the invention is an inorganic scintillator capable of producing scintillation by radiation, which is a crystal comprising a metal oxide containing Lu, Gd, Ce and Si and belonging to space group C2/c monoclinic crystals, and which satisfies the condition specified by the following inequality (1A), wherein ALu represents the number of Lu atoms in the crystal and AGd represents the number of Gd atoms in the crystal. {ALu/(ALu+AGd)}
摘要翻译：本发明的无机闪烁体是能够通过辐射产生闪烁的无机闪烁体，其是包含含有Lu，Gd，Ce和Si的金属氧化物并且属于空间群C2 / c单斜晶体的晶体，并且满足规定的条件通过以下不等式（1A），其中A Lu表示晶体中的Lu原子的数目，并且A <！ - SIPO - >表示晶体中的Gd原子数。 <？in-line-formula description =“In-line Formulas”end =“lead”？> {A /（A /SUB>)}<0.50（1A）<？in-line-formula description =“In-line Formulas”end =“tail”？>

29. 发明申请

US20050279277A1 Systems and methods for measuring and reducing dust in granular material 有权
标题翻译：用于测量和减少颗粒材料中灰尘的系统和方法
公开(公告)号：US20050279277A1
公开(公告)日：2005-12-22
申请号：US10930654
申请日：2004-08-31
申请人： John Holder , Hariprasad Sreedharamurthy , John Hilker
发明人： John Holder , Hariprasad Sreedharamurthy , John Hilker
IPC分类号： C01B33/027 , C30B15/00 , C30B21/06 , C30B30/04
CPC分类号： B07B4/04 , C01B33/027 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a baffle tube for receiving a polysilicon flow. A measuring system includes a manifold and filter for separating and measuring the dust from a flow of polysilicon. The invention is also directed to methods of using the systems, to methods of manufacturing and packaging granular polysilicon, and to a supply of granular polysilicon.
摘要翻译：本发明涉及用于测量和减少颗粒状多晶硅中的粉尘的装置和方法。一方面，系统包括具有用于从多晶硅拉出灰尘的真空端口的处理容器。本发明的另一个系统包括用于接收多晶硅流的挡板管。测量系统包括用于分离和测量多晶硅流中的灰尘的歧管和过滤器。本发明还涉及使用该系统，制造和包装颗粒状多晶硅的方法以及颗粒状多晶硅供应的方法。

30. 发明申请

US20050252441A1 Silicon single crystal wafer and epitaxial wafer, and method for producing silicon single crystal 有权
标题翻译：硅单晶晶片和外延晶片，以及硅单晶的制造方法
公开(公告)号：US20050252441A1
公开(公告)日：2005-11-17
申请号：US10512470
申请日：2003-05-07
申请人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
发明人： Masahiro Sakurada , Nobuaki Mitamura , Izumi Fusegawa , Tomohiko Ohta
IPC分类号： C30B15/00 , C30B29/06 , H01L21/322 , C30B33/06 , C30B21/06 , C30B27/02
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203
摘要： In a method for producing a silicon single crystal by Czochralski method, the single crystal is grown with controlling a growth rate between a growth rate at a boundary where a defect region detected by Cu deposition remaining after disappearance of OSF ring disappears when gradually decreasing a growth rate of silicon single crystal during pulling and a growth rate at a boundary where a high oxygen precipitation Nv region having a density of BMDs of 1×107 numbers/cm3 or more and/or a wafer lifetime of 30 μsec or less after oxygen precipitation treatment disappears when gradually decreasing the growth rate further. Thereby, there is provided a silicon single crystal which does not belong to any of V region rich in vacancy, OSF region and I region rich in interstitial silicon, and has excellent electrical characteristics and gettering capability, so that yield of devices can be surely improved, and also an epitaxial wafer.
摘要翻译：在通过Czochralski法制造单晶硅的方法中，通过控制在逐渐减小生长时OSF环消失后残留的Cu沉积检测到的缺陷区域的边界处的生长速度之间的生长速率生长单晶拉伸时的硅单晶速率和BMD密度为1×10 7 / cm 3以上的高氧沉淀Nv区域的边界处的生长速度，以及 /或在氧沉淀处理后30微米或更小的晶片寿命在进一步降低生长速率时消失。由此，提供了不属于富含空隙的V区，OSF区和富含间隙硅的I区的任何一种的硅单晶，并且具有优异的电特性和吸杂能力，从而可以可靠地提高器件的产量，以及外延晶片。

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