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21. 发明申请

US20170020700A1 Method of Forming a Drug-Eluting Medical Device 审中-公开
标题翻译：形成药物洗脱医疗器械的方法
公开(公告)号：US20170020700A1
公开(公告)日：2017-01-26
申请号：US15224897
申请日：2016-08-01
申请人： Medtronic Vascular, Inc.
发明人： Ryan Bienvenu , John Kantor
IPC分类号： A61F2/89 , A61L31/02 , A61L31/16 , C23F1/12
CPC分类号： A61F2/89 , A61F2/86 , A61F2/88 , A61F2230/0069 , A61F2250/0067 , A61F2250/0068 , A61L31/022 , A61L31/16 , A61L2400/18 , A61M31/002 , A61M2207/10 , B23P19/04 , C23F1/12 , Y10T29/4987
摘要： A method of forming a stent includes the steps of forming a composite member into a stent pattern, forming openings through an outer member of the composite member, processing the composite member to remove a portion of the composite member without adversely affecting the outer member, and swaging the outer member to create a plurality of lumens. The composite member may be formed of an outer member with an hourglass-shaped inner member, wherein the processing step removes the inner member and the swaging step forms two lumens from the hourglass shaped cavity. The composite member may be formed of an outer member, an inner member, and an intermediate member, wherein the processing step removes the intermediate member and the swaging step presses portions of the outer member into contact with the inner member to form two lumens separated by the inner member.
摘要翻译：形成支架的方法包括以下步骤：将复合构件形成支架图案，通过复合构件的外部构件形成开口，处理复合构件以去除复合构件的一部分而不会不利地影响外部构件;以及模制外部构件以形成多个流明。复合构件可以由具有沙漏形内部构件的外部构件形成，其中处理步骤移除内部构件，并且锻造步骤与沙漏形腔形成两个流明。复合构件可以由外部构件，内部构件和中间构件形成，其中加工步骤移除中间构件，并且锻造步骤将外部构件的部分按压与内部构件接触以形成由内部成员。

22. 发明授权

US09553318B2 Surfactant removal from palladium nanoparticles 有权
标题翻译：从钯纳米颗粒中除去表面活性剂
公开(公告)号：US09553318B2
公开(公告)日：2017-01-24
申请号：US14122546
申请日：2011-06-08
申请人： Minhua Shao
发明人： Minhua Shao
IPC分类号： B22F1/00 , C23F1/12 , C25F3/02 , H01M4/92 , H01M4/88 , B82Y30/00
CPC分类号： H01M4/92 , B22F1/0018 , B22F1/0088 , B22F2201/013 , B22F2301/25 , B22F2998/10 , B22F2999/00 , B82Y30/00 , C23F1/12 , C25F3/02 , H01M4/88 , Y02E60/50 , B22F2202/06 , B22F1/0062 , B22F9/18
摘要： A method for removing a surfactant from a palladium nanoparticle includes exposing the palladium nanoparticle to hydrogen and removing the surfactant from the palladium nanoparticle. A method includes synthesizing a palladium nanoparticle using a surfactant. The surfactant influences a geometric property of the palladium nanoparticle and bonds to the palladium nanoparticle. The method also includes exposing the palladium nanoparticle to hydrogen to remove the surfactant from the palladium nanoparticle.
摘要翻译：从钯纳米颗粒中除去表面活性剂的方法包括将钯纳米颗粒暴露于氢气并从钯纳米颗粒中除去表面活性剂。一种方法包括使用表面活性剂合成钯纳米颗粒。表面活性剂影响钯纳米颗粒的几何性质并与钯纳米颗粒结合。该方法还包括将钯纳米颗粒暴露于氢以从钯纳米颗粒中除去表面活性剂。

23. 发明授权

US09506154B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US09506154B2
公开(公告)日：2016-11-29
申请号：US14770082
申请日：2014-11-19
申请人： Hitachi High-Technologies Corporation
发明人： Masato Ishimaru , Takeshi Shimada , Makoto Suyama , Takahiro Abe
IPC分类号： B44C1/22 , C23F1/02 , C23F1/12
CPC分类号： C23F1/02 , C23F1/12 , C23F4/00 , H01L43/12
摘要： A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.
摘要翻译：提供了一种等离子体处理方法，用于从图案化尺寸减小要蚀刻的膜的尺寸，并且能够减小尺寸，而不会导致待蚀刻的膜的变形或塌陷。使用抗蚀剂的等离子体蚀刻来修整钽膜的等离子体处理方法，设置在抗蚀剂下方的防反射膜和设置在抗反射膜下的掩模膜的步骤包括以下步骤：通过等离子体蚀刻对抗反射膜和掩模膜进行修整抗蚀剂作为掩模; 通过等离子体去除经过修整的抗蚀剂和抗反射膜; 作为掩模，通过用抗蚀剂和经过修整的抗反射膜之后获得的掩模膜通过等离子体蚀刻来修整钽膜作为掩模。

24. 发明授权

US09472417B2 Plasma-free metal etch 有权
标题翻译：无等离子体金属蚀刻
公开(公告)号：US09472417B2
公开(公告)日：2016-10-18
申请号：US14513517
申请日：2014-10-14
申请人： Applied Materials, Inc.
发明人： Nitin K. Ingle , Jessica Sevanne Kachian , Lin Xu , Soonam Park , Xikun Wang , Jeffrey W. Anthis
IPC分类号： H01L21/311 , H01L21/3065 , H01L21/02 , C23F1/02 , C23F1/12 , H01J37/32 , C23F4/00 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/3065 , C23F1/02 , C23F1/12 , C23F4/00 , H01J37/3244 , H01J2237/334 , H01J2237/3341 , H01L21/02071 , H01L21/31116 , H01L21/31122 , H01L21/32135 , H01L21/32136 , H01L21/76814
摘要： Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.
摘要翻译：描述了从衬底表面选择性地蚀刻含金属材料的方法。蚀刻相对于含硅膜如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅选择性去除含金属的材料。这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。在实施例中，没有等离子体远程地或局部地激发含卤素的前体。

25. 发明申请

US20160265121A1 System And Method For Controllable Non-Volatile Metal Removal 有权
标题翻译：可控非挥发性金属去除的系统和方法
公开(公告)号：US20160265121A1
公开(公告)日：2016-09-15
申请号：US14657170
申请日：2015-03-13
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Tsung-Liang Chen , Benjamin Schmiege , Jeffrey W. Anthis , Glen Gilchrist
IPC分类号： C23F4/00 , B05B15/00 , B05B12/02 , C23F1/12 , B05B17/00
CPC分类号： C23F1/12 , B05B12/02 , B05B15/00 , B05B17/00 , C23C16/0236 , C23C18/1295 , C23F4/00 , H01J37/32449 , H01J37/32834 , H01L21/67248 , H01L21/67253
摘要： A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. In some embodiments, one or more gasses are introduced into the chamber at a first temperature. The atoms in these gasses chemically react with the metal on the surface of the substrate to form a removable compound. The gasses are then exhausted from the chamber, leaving the removable compound on the surface of the substrate. The temperature of the chamber is then elevated to a second temperature, greater than the sublimation temperature of the removable compound. This increased temperature allows the removable compound to become gaseous and be exhausted from the chamber.
摘要翻译：公开了一种以受控方式从衬底去除金属的系统和方法。该系统包括具有一个或多个气体入口的腔室，以允许气体进入腔室，至少一个排气泵，以从腔室排出气体，以及能够改变腔室温度的加热器。在一些实施方案中，在第一温度下将一种或多种气体引入室中。这些气体中的原子与衬底表面上的金属发生化学反应，形成可除去的化合物。然后将气体从室中排出，将可除去的化合物留在基材的表面上。然后将腔室的温度升高至大于可除去化合物的升华温度的第二温度。这种升高的温度允许可去除的化合物变得气态并从室中排出。

26. 发明申请

US20160138171A1 METHOD FOR MANUFACTURING CORROSION RESISTANT AND CONDUCTIVE NANO CARBON COATING LAYER AND FUEL CELL BIPOLAR PLATE THEREBY USING STAINLESS STEEL SUBSTRATE 审中-公开
标题翻译：使用不锈钢基板制造耐腐蚀和导电的纳米碳涂层和燃料电池双极板的方法
公开(公告)号：US20160138171A1
公开(公告)日：2016-05-19
申请号：US14885077
申请日：2015-10-16
申请人： J&L Tech Co., Ltd.
发明人： Youngha Jun , Jaimoo Yoo , Kiho Yeo , Eui Chul Shin
IPC分类号： C23F1/12 , H01J37/32 , H01M8/1004 , C23C28/04
CPC分类号： C23F1/12 , C23C28/04 , H01J37/32899 , H01J2237/3341 , H01M8/021 , H01M8/0213 , H01M8/0215 , H01M8/0228 , H01M8/1004 , H01M2008/1095 , Y02P70/56
摘要： The present invention proposed manufacturing device of coating layers with good conductivity and corrosion resistance at high productivity comprising etching the oxide layer on the stainless steel substrate by plasma etching to activate the surface and prevent from decreasing it's conductivity, coating metal nitrides like CrN or TiN in nano size thickness on the etched surface and coating carbon layer at nano size thickness on top of it. According to the present invention, it is possible to produce manufacture fuel cell bipolar plate, electrode material and stainless steel with reinforced conductivity and corrosion resistance in mass.
摘要翻译：本发明提出了以高生产率具有良好导电性和耐腐蚀性的涂层的制造装置，包括通过等离子体蚀刻蚀刻不锈钢衬底上的氧化物层以激活表面并防止其导电性降低，将金属氮化物如CrN或TiN涂覆在在蚀刻表面上的纳米尺寸厚度，并且在其顶部涂覆纳米尺寸厚度的碳层。根据本发明，可以制造具有增强的导电性和耐腐蚀性的制造燃料电池双极板，电极材料和不锈钢。

27. 发明授权

US09203028B2 Method for producing vapor deposition mask, and method for producing organic semiconductor element 有权
标题翻译：蒸镀掩模的制造方法以及有机半导体元件的制造方法
公开(公告)号：US09203028B2
公开(公告)日：2015-12-01
申请号：US14370875
申请日：2013-01-11
申请人： DAI NIPPON PRINTING CO., LTD.
发明人： Toshihiko Takeda , Hiroyuki Nishimura , Katsunari Obata
IPC分类号： H01L51/40 , H01L51/00 , C23C14/04 , C23C16/04 , C23F1/02 , C23F1/12 , C23F1/14 , H01L51/56
CPC分类号： H01L51/0011 , B05B12/20 , C23C14/042 , C23C16/042 , C23F1/02 , C23F1/12 , C23F1/14 , G03F7/20 , G03F7/32 , H01L51/0021 , H01L51/5012 , H01L51/5221 , H01L51/56
摘要： A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A vapor deposition mask is produced by the steps of preparing a metal plate with a resin layer in which a resin layer is provided on one surface of a metal plate, forming a metal mask with a resin layer by forming a slit that penetrates through only the metal plate, for the metal plate in the metal plate with a resin layer, and thereafter, forming a resin mask by forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin layer by emitting a laser from the metal mask side.
摘要翻译：提供了即使尺寸增加也能够同时满足定义和减轻重量的气相沉积掩模的制造方法，并且提供了能够制造具有高清晰度的有机半导体元件的有机半导体元件的制造方法。通过制备具有树脂层的金属板的步骤来制造气相沉积掩模，其中树脂层设置在金属板的一个表面上，通过形成仅穿过金属板的狭缝形成具有树脂层的金属掩模金属板，金属板中的金属板用树脂层形成，然后通过在树脂层中通过发射在纵向和横向上形成多个沿着蒸镀法制成的图案的开口形成树脂掩模来自金属掩模面的激光。

28. 发明申请

US20150060405A1 METHOD FOR MANUFACTURING MICROSTRUCTURE 有权
标题翻译：制造微结构的方法
公开(公告)号：US20150060405A1
公开(公告)日：2015-03-05
申请号：US14473837
申请日：2014-08-29
申请人： CANON KABUSHIKI KAISHA
发明人： Takayuki Teshima
IPC分类号： G21K1/06 , C23F1/12 , C23F1/40
CPC分类号： G21K1/067 , C09K13/02 , C09K13/08 , C23F1/02 , C23F1/12 , C23F1/18 , C23F1/28 , C23F1/44 , C25D1/08 , G21K2201/067 , G21K2207/005
摘要： A method is provided for producing a microstructure. The method includes the first step of forming a supporting layer on a base substrate including a silicon substrate provided with recessed sections at a first surface thereof and a metal structure filling the recessed sections so as to come in contact with the metal structure at the first surface, the second step of forming a structure including the metal structure and the supporting layer by selectively etching the silicon substrate to expose at least the surface of the metal structure opposite the surface in contact with the supporting layer from the silicon substrate, and the third step of selectively etching the supporting layer of the metal structure.
摘要翻译：提供了一种生产微结构的方法。该方法包括在包括在其第一表面上设置有凹部的硅基板的基底基板上形成支撑层的第一步骤和填充凹部的金属结构，以在第一表面与金属结构接触第二步是通过选择性地蚀刻硅衬底来形成包括金属结构和支撑层的结构，以至少暴露出与硅衬底相接触的与支承层接触的表面的金属结构的表面，第三步骤选择性地蚀刻金属结构的支撑层。

29. 发明申请

US20140360979A1 DRY NON-PLASMA TREATMENT SYSTEM AND METHOD OF USING 有权
标题翻译：干非等离子体处理系统及其使用方法
公开(公告)号：US20140360979A1
公开(公告)日：2014-12-11
申请号：US14466146
申请日：2014-08-22
申请人： Tokyo Electron Limited
发明人： Martin Kent , Eric J. Strang
IPC分类号： C23F1/02 , C09K13/08 , C01B7/19 , C23F1/12
CPC分类号： B05B12/12 , B05B12/04 , B05B13/02 , C01B7/191 , C09K13/08 , C23F1/02 , C23F1/12 , H01L21/02049 , H01L21/0337 , H01L21/0338 , H01L21/30621 , H01L21/31116 , H01L21/67069 , H01L21/67109 , H01L21/67248 , H01L21/68742
摘要： A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.
摘要翻译：描述了干燥的非等离子体处理系统和用于去除氧化物材料的方法。处理系统被配置为提供一个或多个基底的化学处理，其中每个基底在受控条件下暴露于气态化学物质，包括表面温度和气体压力。此外，处理系统被配置为提供每个基板的热处理，其中每个基板被热处理以去除每个基板上的经化学处理的表面。

30. 发明申请

US20140299571A1 PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20140299571A1
公开(公告)日：2014-10-09
申请号：US14242273
申请日：2014-04-01
申请人： TOKYO ELECTRON LIMITED
发明人： Masayuki SAWATAISHI
IPC分类号： C23F1/12
CPC分类号： C23F1/12 , C23F4/00 , H01J37/32091 , H01J2237/334 , H01L21/32136
摘要： Disclosed are a plasma processing method and a plasma processing apparatus which collectively perform etching under the same etching conditions while suppressing a shape abnormality. The multilayer film material has a polysilicon layer, a first metal layer formed on the polysilicon layer, and a hard mask layer which contains a tungsten layer formed on the first metal layer. In the method, plasma is generated by a mixed gas of a chloride-containing gas which contains a compound containing chlorine and silicon, a compound containing chlorine and boron, or a compound containing chlorine and hydrogen, a chlorine-containing gas which contains chlorine, and a processing gas which contains carbon and fluorine, and the hard mask layer is used as an etching mask so as to perform the etching from a top surface of the first metal layer to a bottom surface of the polysilicon layer.
摘要翻译：公开了一种在抑制形状异常的同时在相同的蚀刻条件下进行蚀刻的等离子体处理方法和等离子体处理装置。多层膜材料具有多晶硅层，在多晶硅层上形成的第一金属层和在第一金属层上形成有钨层的硬掩模层。在该方法中，通过含有氯和硅的化合物的氯化物气体，含氯和硼的化合物，含氯和氢的化合物，含氯的含氯气体，以及包含碳和氟的处理气体，并且将硬掩模层用作蚀刻掩模，以便从第一金属层的顶表面到多晶硅层的底表面进行蚀刻。

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