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    • 30. 发明申请
    • Lithographic template and method of formation and use
    • 光刻模板及其形成和使用方法
    • US20020122995A1
    • 2002-09-05
    • US10103608
    • 2002-03-21
    • David P. ManciniDoug J. ResnickWilliam J. Dauksher
    • G03F009/00G03C005/00B32B017/06B32B009/00B32B027/36
    • B82Y10/00B82Y40/00G03F7/0002Y10S438/942Y10S438/945Y10T428/31507
    • This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), an optional etch stop layer (16) formed on a surface (14) of the substrate (12), and a patterning layer (20) formed on a surface (18) of the etch stop layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).
    • 本发明涉及半导体器件,微电子器件,微机电器件,微流体器件,更具体地涉及光刻模板,形成光刻模板的方法以及用该光刻模板形成器件的方法。 光刻模板(10)形成为具有衬底(12),形成在衬底(12)的表面(14)上的任选的蚀刻停止层(16),以及形成在表面(18)上的图形层 )的蚀刻停止层(16)。 模板(10)用于通过将模板(10)定位成紧邻其上形成有辐射敏感材料的半导体器件(30)而影响器件(30)中的图案的半导体器件(30)的制造,以及 施加压力以使辐射敏感材料流入存在于模板上的浮雕图像。 然后通过模板施加辐射,以进一步固化辐射敏感材料的部分,并进一步限定辐射敏感材料中的图案。 然后移除模板(10)以完成半导体器件(30)的制造。