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21. 发明申请

US20120313689A1 LOW VOLTAGE ISOLATION SWITCH, IN PARTICULAR FOR A TRANSMISSION CHANNEL FOR ULTRASOUND APPLICATIONS 有权
标题翻译：低电压隔离开关，特别适用于超声波应用的传输通道
公开(公告)号：US20120313689A1
公开(公告)日：2012-12-13
申请号：US13536818
申请日：2012-06-28
申请人： Valeria Bottarel , Giulio Ricotti , Silvia Marabelli
发明人： Valeria Bottarel , Giulio Ricotti , Silvia Marabelli
IPC分类号： H03K17/687
CPC分类号： H03K17/693 , B06B1/0215 , H03K17/06 , H03K17/08122 , H03K17/08142 , H03K17/6872 , H03K17/74
摘要： A low voltage isolation circuit is coupled between an input terminal for receiving a high voltage signal and an output terminal for transmitting the high voltage signal to a load. The isolation circuit includes a driving block; having a first driving transistor coupled between a first voltage reference and an intermediate node and a second driving transistor coupled between the intermediate node and a second voltage reference; an isolation block connected between the input and output terminals and, through a protection block to the intermediate node. The protection block includes first and second protection transistors (MD1, coupled in anti-series to each other and having control terminals receiving complementary protection driving signals. The isolation block includes a voltage limiter block, a diode block and a control transistor connected across the diode block between the input and output terminals and having a control terminal connected to the intermediate node through the protection block.
摘要翻译：低电压隔离电路耦合在用于接收高电压信号的输入端子和用于将高电压信号传输到负载的输出端子之间。隔离电路包括驱动块; 具有耦合在第一参考电压和中间节点之间的第一驱动晶体管和耦合在中间节点和第二电压基准之间的第二驱动晶体管; 连接在输入和输出端之间的隔离块，并通过保护块连接到中间节点。保护块包括第一和第二保护晶体管（MD1，彼此反串联并且具有接收互补保护驱动信号的控制端子），隔离块包括一个连接在二极管上的电压限制器块，二极管块和控制晶体管阻塞在输入和输出端之间，并具有通过保护块连接到中间节点的控制终端。

22. 发明申请

US20120057387A1 HYBRID SWITCH FOR RESONANT POWER CONVERTERS 有权
标题翻译：谐振电源转换器混合开关
公开(公告)号：US20120057387A1
公开(公告)日：2012-03-08
申请号：US13206846
申请日：2011-08-10
申请人： Jih-Sheng Lai , Wensong Yu
发明人： Jih-Sheng Lai , Wensong Yu
IPC分类号： H02M7/5387 , H03K17/567 , H02M7/00 , H02M7/537 , H03K17/284 , H03K17/687
CPC分类号： H02M7/797 , H02M2001/0048 , H03K17/06 , H03K17/12 , H03K17/164 , H03K17/168 , H03K17/567 , Y02B70/1441 , Y02B70/1491
摘要： A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.
摘要翻译：包括两个并联连接但具有作为电流的函数的不同电压降特性的半导体开关的混合开关有助于实现零电压切换，并且减少传导损耗以补偿通过诸如大电流的功率转换器中的零电压切换实现的开关损耗的降低逆变器。

23. 发明授权

US08018416B2 Driving circuit with output control circuit and liquid crystal display using same 有权
标题翻译：驱动电路采用输出控制电路和液晶显示器
公开(公告)号：US08018416B2
公开(公告)日：2011-09-13
申请号：US11903769
申请日：2007-09-24
申请人： Kai Meng , Xiao-Jing Qi
发明人： Kai Meng , Xiao-Jing Qi
IPC分类号： G09G3/36
CPC分类号： H03K17/284 , H03K17/06 , H03K17/6871 , H03K17/693 , H03K17/78
摘要： An exemplary driving circuit (20) includes gate lines (201) that are parallel to each other and that each extend along a first direction; first data lines (202) that are parallel to each other and that each extend along a second direction substantially orthogonal to the first direction; thin film transistors (203) provided in the vicinity of intersections of the gate lines and the data lines; a gate driving circuit (210) connected to the gate lines; a data driving circuit (220) connected to the data lines; an access circuit (230) configured for accessing data signals outputted by the data driving circuit; and an output control circuit (240) configured for receiving the data signals accessed by the access circuit and making the time period in which the data signals are applied to the first data lines in accord with the time period during which the thin film transistors are switched on.
摘要翻译：示例性驱动电路（20）包括彼此平行并且沿着第一方向延伸的栅极线（201）第一数据线（202），其彼此平行并且各自沿着基本上与所述第一方向正交的第二方向延伸; 设置在栅极线和数据线的交叉点附近的薄膜晶体管（203）连接到所述栅极线的栅极驱动电路（210）; 连接到数据线的数据驱动电路（220）; 访问电路（230），被配置为访问由数据驱动电路输出的数据信号; 以及输出控制电路（240），其被配置为接收由所述存取电路访问的数据信号，并且根据所述薄膜晶体管被切换的时间周期将所述数据信号施加到所述第一数据线的时间段上。

24. 发明申请

US20110200212A1 TEMPERATURE COMPENSATED VOLTAGE PUMP 有权
标题翻译：温度补偿电压泵
公开(公告)号：US20110200212A1
公开(公告)日：2011-08-18
申请号：US13058749
申请日：2009-07-30
申请人： Ulrik Wismar
发明人： Ulrik Wismar
IPC分类号： H04R1/00 , H03K17/78
CPC分类号： H02M3/073 , H02M3/07 , H03K17/06 , H03K17/14 , H04R19/005 , H04R19/04
摘要： The present invention relates to an integrated circuit voltage pump with temperature compensation circuitry providing improved DC output voltage accuracy over an operational temperature range. The compensation circuitry is operative to eliminate or reduce temperature induced changes of voltage drops across semiconductor diodes of the integrated circuit voltage pump.
摘要翻译：本发明涉及具有温度补偿电路的集成电路电压泵，其在工作温度范围内提供改进的直流输出电压精度。补偿电路用于消除或减少温度引起的集成电路电压泵的半导体二极管上的电压降的变化。

25. 发明申请

US20110157949A1 Highly Efficient III-Nitride Power Conversion Circuit 有权
标题翻译：高效III氮化物电源转换电路
公开(公告)号：US20110157949A1
公开(公告)日：2011-06-30
申请号：US13043235
申请日：2011-03-08
申请人： Tony Bahramian
发明人： Tony Bahramian
IPC分类号： H02M3/155
CPC分类号： H02M7/537 , H02M1/08 , H02M3/1584 , H02M3/1588 , H03K17/04 , H03K17/06 , H03K2017/6875 , Y02B70/1466
摘要： According to an exemplary embodiment, a III-nitride power conversion circuit includes a gate driver having a plurality of cascaded inverters, each of the plurality of cascaded inverters including at least one III-nitride transistor. At least one of the plurality of cascaded inverters has a cutoff switch and a III-nitride depletion mode load where the cutoff switch is configured to disconnect the III-nitride depletion mode load so as to prevent current from flowing from a supply voltage of the at least one of the plurality of cascaded inverters. The cutoff switch of the at least one of the plurality of cascaded inverters can be driven by one of the plurality of cascaded inverters. The III-nitride power conversion circuit can also include an output driver driven by the gate driver where the output driver has a segmented III-nitride transistor. Furthermore, a selector circuit can be configured to selectively disable at least one segment of the segmented III-nitride transistor.
摘要翻译：根据示例性实施例，III族氮化物功率转换电路包括具有多个级联的反相器的栅极驱动器，多个级联的反相器中的每一个包括至少一个III族氮化物晶体管。多个级联逆变器中的至少一个具有截止开关和III族氮化物耗尽模式负载，其中截止开关被配置为断开III族氮化物耗尽模式负载，以便防止电流从at的供应电压流出多个级联逆变器中的至少一个。多个级联逆变器中的至少一个的截止开关可以由多个级联的逆变器之一驱动。 III族氮化物功率转换电路还可以包括由栅极驱动器驱动的输出驱动器，其中输出驱动器具有分段III族氮化物晶体管。此外，选择器电路可以被配置为选择性地禁用分段III族氮化物晶体管的至少一个段。

26. 发明授权

US07777518B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07777518B2
公开(公告)日：2010-08-17
申请号：US12471720
申请日：2009-05-26
申请人： Yoshiaki Toyoda , Kenichi Ishii , Morio Iwamizu
发明人： Yoshiaki Toyoda , Kenichi Ishii , Morio Iwamizu
IPC分类号： H03K17/16 , H03K19/003
CPC分类号： H03K17/0828 , H03K17/06 , H03K2017/066
摘要： A buffer circuit is provided between a gate terminal of a pull-down transistor and a threshold circuit receiving a gate signal as an input signal. A voltage applied to an output terminal of a power semiconductor element from an external battery power supply is supplied to the buffer circuit through a resistive element. The buffer circuit converts the level of an on-signal output from the threshold circuit into a voltage higher than the threshold of the pull-down transistor, so that the pull-down transistor operates surely to turn off the power semiconductor element even when the level of the gate signal is low. Thus, there is provided a semiconductor integrated circuit device having a power semiconductor element which can be turned off by sure operation of a pull-down semiconductor element.
摘要翻译：在下拉晶体管的栅极端子和接收栅极信号的阈值电路之间设置缓冲电路作为输入信号。从外部电池电源向功率半导体元件的输出端施加的电压通过电阻元件供给缓冲电路。缓冲电路将来自阈值电路的导通信号输出的电平转换成高于下拉晶体管的阈值的电压，使得下拉晶体管可靠地工作以关闭功率半导体元件，即使当电平的门信号为低电平。因此，提供了具有功率半导体元件的半导体集成电路器件，该功率半导体元件可以通过下拉半导体元件的可靠操作而被关断。

27. 发明申请

US20100141304A1 DRIVE CIRCUIT FOR POWER ELEMENT 有权
标题翻译：功率元件驱动电路
公开(公告)号：US20100141304A1
公开(公告)日：2010-06-10
申请号：US12667306
申请日：2007-07-03
申请人： Yuji Miyazaki
发明人： Yuji Miyazaki
IPC分类号： G05F5/00
CPC分类号： H02M1/08 , H03K17/06 , H03K17/567 , H03K2017/066 , H03K2217/0045 , H03K2217/0081
摘要： A driving circuit (1) for an IGBT (10) comprises an H bridge circuit (80) using first to fourth switching elements (Q1-Q4). A control unit (20) switches the states of the switching elements from a first state in which the first and fourth switching elements (Q1, Q4) are set to be in an on state and the second and third switching elements (Q2, Q3) are set to be in an off state to a second state in which the first and fourth switching elements (Q1, Q4) are set to be in an off state and the second and third switching elements (Q2, Q3) are set to be in an on state when receiving an order to make the IGBT (10) transit from an on state to an off state. With the structure of the driving circuit (1) described above, reverse bias can be applied to the IGBT (10) by use of a single power source (15).
摘要翻译： IGBT（10）的驱动电路（1）包括使用第一至第四开关元件（Q1-Q4）的H桥电路（80）。控制单元（20）将开关元件的状态从第一和第四开关元件（Q1，Q4）设定为导通状态的第一状态和第二和第三开关元件（Q2，Q3）被设定为处于断开状态，第二状态和第二开关元件（Q1，Q4）被设定为截止状态，第二开关元件（Q3，Q2）设定为第二状态当接收使IGBT（10）从接通状态转换到断开状态的命令时的接通状态。利用上述驱动电路（1）的结构，可以通过使用单个电源（15）向IGBT（10）施加反向偏压。

28. 发明申请

US20080231339A1 Double quench circuit for an avalanche current device 有权
标题翻译：用于雪崩电流装置的双重淬火电路
公开(公告)号：US20080231339A1
公开(公告)日：2008-09-25
申请号：US11726847
申请日：2007-03-23
申请人： Pierre D. Deschamps
发明人： Pierre D. Deschamps
IPC分类号： H03K17/56
CPC分类号： H03K17/78 , H01L31/107 , H03K17/0416 , H03K17/06 , H03K17/28 , H03K17/60 , H03K17/6877 , H03K2017/066 , H03K2017/0806
摘要： A double quench circuit for an avalanche current device is provided in which the circuit includes an avalanche current device having a first terminal responsive to a bias voltage to reverse bias the avalanche current device above its avalanche breakdown voltage. A first quench circuit is responsive to the bias voltage and coupled to the first terminal of the avalanche device for reducing the amount of the avalanche current passing through the avalanche device. A second quench circuit is coupled to a second terminal of the avalanche device for reducing the amount of the avalanche current passing through the avalanche device.
摘要翻译：提供了一种用于雪崩电流装置的双重骤冷电路，其中电路包括雪崩电流装置，其具有响应于偏置电压的第一端子，以将雪崩电流装置反向偏置高于其雪崩击穿电压。第一骤冷电路响应于偏置电压并且耦合到雪崩装置的第一端子，用于减少通过雪崩装置的雪崩电流的量。第二骤冷电路耦合到雪崩装置的第二端子，用于减少通过雪崩装置的雪崩电流的量。

29. 发明申请

US20080180158A1 DRIVING CIRCUIT FOR AN EMITTER-SWITCHING CONFIGURATION OF TRANSISTORS 有权
标题翻译：用于发射极开关晶体管配置的驱动电路
公开(公告)号：US20080180158A1
公开(公告)日：2008-07-31
申请号：US12022716
申请日：2008-01-30
申请人： Rosario Scollo , Massimo Nania
发明人： Rosario Scollo , Massimo Nania
IPC分类号： H03K17/60
CPC分类号： H03K17/567 , H03K17/0406 , H03K17/06 , H03K17/662 , H03K17/6871
摘要： A driving circuit for an emitter-switching configuration of transistors having first and second control terminals connected to the driving circuit, forms a controlled emitter-switching device having in turn respective collector, source and gate terminals. The driving circuit comprises a driving block coupled between the collector terminal and the source terminal of the controlled emitter-switching device and connected to the first control terminal of the emitter-switching configuration. Further advantageously, the driving block comprises at least one IGBT driving device coupled between the collector terminal and the first control terminal of the emitter-switching configuration and having, in turn, a third control terminal, as well as a driving bipolar transistor, coupled between the collector terminal and the first control terminal of the emitter-switching configuration for controlling a saturation condition of said bipolar transistor of said emitter-switching configuration maintaining a base-collector junction thereof at a voltage next to zero and having, in turn, a fourth control terminal.
摘要翻译：用于具有连接到驱动电路的第一和第二控制端子的晶体管的发射极 - 开关配置的驱动电路形成受控的发射极开关器件，其依次具有集电极，源极和栅极端子。驱动电路包括耦合在受控发射极开关器件的集电极端子和源极端子之间并连接到发射极开关配置的第一控制端子的驱动块。进一步有利地，驱动块包括耦合在发射极 - 开关配置的集电极端子和第一控制端子之间的至少一个IGBT驱动器件，并且具有连接在第三控制端子之间的第三控制端子以及驱动双极晶体管集电极端子和发射极开关配置的第一控制端子，用于控制所述发射极 - 开关配置的所述双极晶体管的饱和状态，将其基极集电极结保持在零下的电压，并且又具有第四控制终端。

30. 发明授权

US06861892B1 Load-generated drive, substantially no quiescent current, techniques and circuits for high speed switching of transistors 有权
标题翻译：负载产生的驱动器，基本上没有静态电流，用于晶体管高速切换的技术和电路
公开(公告)号：US06861892B1
公开(公告)日：2005-03-01
申请号：US10350552
申请日：2003-01-22
申请人： Karl Edwards
发明人： Karl Edwards
IPC分类号： H03K17/0412 , H03K17/042 , H03K17/06 , H03K17/04
CPC分类号： H03K17/04213 , H03K17/04126 , H03K17/06
摘要： Techniques and circuits for high speed switching of transistors are provided. These techniques and circuits switch an output device while varying the drive current to the output device in proportion to the output current through the output device. In addition, these techniques and circuits provide a switching circuit with substantially no quiescent currents. This is accomplished by sampling the output current conducted by the output device and using the sample as a signal to drive either the output device fully ON or to switch the output device fully OFF.
摘要翻译：提供了用于晶体管高速切换的技术和电路。这些技术和电路在输出设备的输出电流成比例地改变输出设备的驱动电流的同时切换输出设备。此外，这些技术和电路提供基本上没有静态电流的开关电路。这是通过对由输出设备传导的输出电流进行采样并使用样本作为信号来驱动输出设备完全打开或将输出设备完全关断来实现的。

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