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21. 发明申请

US20060159148A1 Optical element 有权
标题翻译：光学元件
公开(公告)号：US20060159148A1
公开(公告)日：2006-07-20
申请号：US11287058
申请日：2005-11-23
申请人： Tomoko Koyama
发明人： Tomoko Koyama
IPC分类号： H01S5/00
CPC分类号： H01S5/18355 , H01S5/0264 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18338 , H01S5/18341 , H01S2301/173
摘要： An optical element includes a surface-emitting type semiconductor laser, and a light-receiving element that detects a part of laser light emitted from the surface-emitting type semiconductor laser, wherein the light-receiving element is formed above the surface-emitting type semiconductor laser and includes a semiconductor layer having one or more layers, and at least one of the layers in the semiconductor layer has a plane configuration that has anisotropy.
摘要翻译：光学元件包括表面发射型半导体激光器和检测从表面发射型半导体激光器发出的激光的一部分的光接收元件，其中光接收元件形成在表面发射型半导体激光器，并且包括具有一层或多层的半导体层，并且半导体层中的至少一层具有各向异性的平面构型。

22. 发明申请

US20060023764A1 Semiconductor laser and method of manufacturing the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：US20060023764A1
公开(公告)日：2006-02-02
申请号：US11171472
申请日：2005-07-01
申请人： Hironobu Sai
发明人： Hironobu Sai
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/18338 , H01S5/18344 , H01S5/18355
摘要： In a semiconductor laser according to the present invention, a p-type and n-type semiconductor portion supply positive holes and electrons to a confining layer in a direction perpendicular to a stacking direction of the confining layer, and the p-type and n-type semiconductor portions do not prevent light produced in the confining layer from being emitted by laser oscillation in a stacking direction of intrinsic semiconductor layers. The p-type and n-type semiconductor portion are placed up to a position enough to supply the positive holes and electrons to the confining layer, and supply the positive holes and electrons to the confining layer respectively. As a result, the positive holes and electrons can recombine in the confining layer to produce light.
摘要翻译：在根据本发明的半导体激光器中，p型和n型半导体部分在垂直于限制层的层叠方向的方向上向限制层提供正空穴和电子，p型和n型半导体部分，半导体部分不能防止在本征半导体层的层叠方向上通过激光振荡而在限制层中产生的光被发射。 p型和n型半导体部分被放置到足以将正空穴和电子提供给限制层的位置，并且将空穴和电子分别提供给限制层。结果，正空穴和电子可以在限制层中复合以产生光。

23. 发明申请

US20050190812A1 Distributed bragg reflector for optoelectronic device 有权
标题翻译：光电器件分布式布拉格反射器
公开(公告)号：US20050190812A1
公开(公告)日：2005-09-01
申请号：US11119292
申请日：2005-04-29
申请人： Ralph Johnson , Klein Johnson , Jimmy Tatum , James Guenter , James Biard , Robert Hawthorne
发明人： Ralph Johnson , Klein Johnson , Jimmy Tatum , James Guenter , James Biard , Robert Hawthorne
IPC分类号： H01S5/183 , H01S5/42 , H01S3/08
CPC分类号： H01S5/423 , H01S5/18308 , H01S5/18313 , H01S5/18333 , H01S5/18338 , H01S5/2063 , H01S5/3054 , H01S5/3211
摘要： This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.
摘要翻译：本公开涉及诸如DBR的设备，其一个示例包括至少一个第一镜像层，其具有从DBR的边缘延伸到距离DBR的边缘大于第一距离的氧化物终止边缘的氧化区域。 DBR还包括至少一个第二镜层，其具有从DBR的边缘延伸到氧化物终止边缘的氧化区域，该氧化物终止边缘距离DBR的边缘小于第二距离，使得第一距离大于第二距离。此外，第一镜层包括浓度高于任何第二镜层中的可氧化材料的浓度的可氧化材料。最后，第一镜层掺杂有比第二镜层中的一个更高的杂质。

24. 发明申请

US20050100070A1 Surface-emitting type semiconductor laser and method for manufacturing the same 有权
标题翻译：表面发射型半导体激光器及其制造方法
公开(公告)号：US20050100070A1
公开(公告)日：2005-05-12
申请号：US10940984
申请日：2004-09-15
申请人： Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
发明人： Hitoshi Nakayama , Tsugio Ide , Tsuyoshi Kaneko
IPC分类号： H01S5/183 , H01S5/42 , H01S5/00
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18311 , H01S5/18338 , H01S5/1835 , H01S5/423 , H01S2301/176
摘要： To provide surface-emitting type semiconductor lasers and methods of manufacturing the same in which the polarization direction of laser light can be readily controlled, a surface-emitting type semiconductor laser includes a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate. The vertical resonator has a plurality of unit resonators. An emission region of each of the unit resonators has a diameter that oscillates in a single-mode.
摘要翻译：为了提供表面发射型半导体激光器及其制造方法，其中可以容易地控制激光的偏振方向，表面发射型半导体激光器包括在衬底上方的垂直谐振器。垂直谐振器包括从衬底依次设置的第一反射镜，有源层和第二反射镜。垂直谐振器具有多个单元谐振器。每个单位谐振器的发射区域具有以单模振荡的直径。

25. 发明申请

US20050078726A1 Vertical-cavity surface-emitting laser device array and method of manufacturing the same 有权
标题翻译：垂直腔表面发射激光器件阵列及其制造方法
公开(公告)号：US20050078726A1
公开(公告)日：2005-04-14
申请号：US10944386
申请日：2004-09-17
申请人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
发明人： Yoshiaki Watanabe , Hironobu Narui , Yoshinori Yamauchi , Yuichi Kuromizu , Yoshiyuki Tanaka
IPC分类号： H01S5/00 , H01S5/183 , H01S5/20 , H01S5/343 , H01S5/40 , H01S5/42
CPC分类号： B82Y20/00 , H01S5/02284 , H01S5/18311 , H01S5/18338 , H01S5/18344 , H01S5/34313 , H01S5/4012 , H01S5/4087 , H01S5/423 , H01S2301/166
摘要： A plurality of vertical-cavity surface-emitting laser devices each having a different lasing wavelength are arrayed by a simple structure and a manufacturing process without increasing device resistance. Each vertical-cavity surface-emitting laser device comprises a layered structure including an active layer and a current confinement layer. The area of current confinement portion in the laminate structures is set corresponding to a wavelength of laser light emitted from each vertical-cavity surface-emitting laser device. Thereby, the plurality of vertical-cavity surface-emitting laser devices emits laser light with different lasing wavelengths.
摘要翻译：通过简单的结构和制造工艺排列具有不同激光波长的多个垂直腔表面发射激光器件，而不增加器件电阻。每个垂直腔表面发射激光器件包括包括有源层和电流限制层的分层结构。层叠结构中的电流限制部分的面积对应于从每个垂直腔表面发射激光器件发射的激光的波长设定。因此，多个垂直腔表面发射激光器件发射具有不同激光波长的激光。

26. 发明申请

US20050019973A1 Phase array oxide-confined VCSEL 有权
标题翻译：相位阵列氧化物封闭VCSEL
公开(公告)号：US20050019973A1
公开(公告)日：2005-01-27
申请号：US10625811
申请日：2003-07-23
申请人： Christopher Chua
发明人： Christopher Chua
IPC分类号： H01S5/183 , H01L21/00 , H01S5/026 , H01S5/42
CPC分类号： H01S5/423 , H01S5/18313 , H01S5/18338
摘要： A phase array of oxide confined VCSELs and a method for forming the phase array of oxide confined VCSELs is described. VCSELs in the array are designed to be simultaneously addressed such that the output of multiple VCSELs can be used to increase the light intensity at a point. In applications where beam coherence from the VCSEL array is desirable, high gain coupling regions break the continuity of the oxide wall surrounding each VCSEL aperture. The high gain coupling regions connect adjacent VCSELs in the VCSEL array thereby allowing mode coupling between adjacent lasers and the output of a coherent beam of light.
摘要翻译：描述了氧化物限制VCSEL的相位阵列和形成氧化物限制VCSEL的相位阵列的方法。阵列中的VCSEL被设计为被同时寻址，使得可以使用多个VCSEL的输出来增加一点处的光强度。在需要来自VCSEL阵列的波束相干性的应用中，高增益耦合区域破坏围绕每个VCSEL孔径的氧化物壁的连续性。高增益耦合区域连接VCSEL阵列中的相邻VCSEL，从而允许相邻激光器之间的模式耦合和相干光束的输出。

27. 发明授权

US06819697B2 Moisture passivated planar index-guided VCSEL 有权
标题翻译：水分钝化平面折射率引导VCSEL
公开(公告)号：US06819697B2
公开(公告)日：2004-11-16
申请号：US10341085
申请日：2003-01-13
申请人： Wilson H. Widjaja , Frank Hu
发明人： Wilson H. Widjaja , Frank Hu
IPC分类号： H01S500
CPC分类号： H01S5/18338 , H01S5/18313 , H01S5/18358 , H01S5/2054 , H01S2301/176
摘要： Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELS) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, the invention features a VCSEL that includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region that is disposed between the top mirror and the bottom mirror and includes an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator. The vertical stack structure defines an etched hole that extends from the substantially planar top surface to the oxidized peripheral region. The etched hole contains a polymer layer and is moisture passivated by an overlying moisture penetration barrier.
摘要翻译：描述了钝化平面折射率引导氧化物垂直腔表面发射激光器（VCSELS）的系统和方法。这些系统和方法解决了这些装置对于由于水分侵入到用于形成折射率引导限制区域的蚀刻孔中可能引起的破坏的独特易感性。在一个方面，本发明的特征在于VCSEL，其包括具有基本平坦的顶表面的垂直堆叠结构。垂直堆叠结构包括顶镜，底镜和设置在顶镜和底镜之间并包括有源光产生区域的空腔区域。上反射镜和底镜中的至少一个具有被周围区域氧化成电绝缘体的层。垂直堆叠结构限定了从基本平坦的顶表面延伸到氧化的周边区域的蚀刻孔。蚀刻的孔包含聚合物层，并被上覆的水分渗透屏障水分钝化。

28. 发明申请

US20040004984A1 Moisture passivated planar index-guided VCSEL 有权
标题翻译：水分钝化平面折射率引导VCSEL
公开(公告)号：US20040004984A1
公开(公告)日：2004-01-08
申请号：US10620137
申请日：2003-07-14
发明人： Seongsin Kim , Wilson H. Widjaja , Suning Xie
IPC分类号： H01S005/00 , H01S003/08
CPC分类号： H01S5/18338 , H01S5/18313 , H01S5/2081 , H01S5/423 , H01S2301/176
摘要： Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region. Each of the etched holes is moisture passivated by an overlying moisture penetration barrier.
摘要翻译：描述了钝化平面折射率引导氧化物垂直腔表面发射激光器（VCSEL）的系统和方法。这些系统和方法解决了这些装置对于由于水分侵入到用于形成折射率引导限制区域的蚀刻孔中可能引起的破坏的独特易感性。在一个方面，VCSEL包括具有基本平坦的顶表面的垂直堆叠结构。垂直堆叠结构包括顶镜，底镜和设置在顶镜和底镜之间并包括有源光产生区的腔区。上反射镜和底镜中的至少一个具有由于暴露于氧化剂而被周围区域氧化成电绝缘体的层。垂直堆叠结构限定两个或更多个蚀刻孔，每个蚀刻孔从基本上平坦的顶表面延伸到氧化的周边区域。每个蚀刻的孔都是由上覆的水分渗透屏障进行湿度钝化。

29. 发明申请

US20030108075A1 Moisture passivated planar index-guided VCSEL 有权
标题翻译：水分钝化平面折射率引导VCSEL
公开(公告)号：US20030108075A1
公开(公告)日：2003-06-12
申请号：US10013108
申请日：2001-12-07
发明人： Seongsin Kim , Wilson H. Widjaja , Suning Xie
IPC分类号： H01S005/00
CPC分类号： H01S5/18338 , H01S5/18313 , H01S5/2081 , H01S5/423 , H01S2301/176
摘要： Systems and methods of passivating planar index-guided oxide vertical cavity surface emitting lasers (VCSELs) are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a substantially planar top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region disposed between the top mirror and the bottom mirror and including an active light generation region. At least one of the top mirror and the bottom mirror has a layer with a peripheral region that is oxidized into an electrical insulator as a result of exposure to an oxidizing agent. The vertical stack structure defines two or more etched holes each extending from the substantially planar top surface to the oxidized peripheral region. Each of the etched holes is moisture passivated by an overlying moisture penetration barrier.
摘要翻译：描述了钝化平面折射率引导氧化物垂直腔表面发射激光器（VCSEL）的系统和方法。这些系统和方法解决了这些装置对于由于水分侵入到用于形成折射率引导限制区域的蚀刻孔中可能引起的破坏的独特易感性。在一个方面，VCSEL包括具有基本平坦的顶表面的垂直堆叠结构。垂直堆叠结构包括顶镜，底镜和设置在顶镜和底镜之间并包括有源光产生区的腔区。上反射镜和底镜中的至少一个具有由于暴露于氧化剂而被周围区域氧化成电绝缘体的层。垂直堆叠结构限定两个或更多个蚀刻孔，每个蚀刻孔从基本上平坦的顶表面延伸到氧化的周边区域。每个蚀刻的孔都是由上覆的水分渗透屏障进行湿度钝化。

30. 发明申请

US20030007531A1 Polarization controlled VCSELs using an asymmetric current confining aperture 审中-公开
标题翻译：使用非对称电流限制孔径的极化控制VCSEL
公开(公告)号：US20030007531A1
公开(公告)日：2003-01-09
申请号：US10180790
申请日：2002-06-25
申请人： Zarlink Semiconductor AB
发明人： Thomas Aggerstam
IPC分类号： H01S005/00 , H01S003/08
CPC分类号： H01S5/18333 , H01S5/18313 , H01S5/18338 , H01S5/18355 , H01S5/2063
摘要： A vertical cavity surface emitting laser (VCSEL) having asymmetrical optical confinement is described. Polarization of VCSELs having symmetrical structures tend to be unpredictable and switchable. The VCSEL of the present invention has vertically etched apertures into the top bragg mirror in order to confine the optical path into an asymmetric structure. This has the effect of locking polarization into a fixed mode.
摘要翻译：描述了具有不对称光限制的垂直腔表面发射激光器（VCSEL）。具有对称结构的VCSEL的极化往往是不可预测和可切换的。本发明的VCSEL具有垂直蚀刻的孔径到顶部布拉格反射镜中，以便将光路限制在非对称结构中。这具有将偏振锁定到固定模式的效果。

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