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21. 发明授权

US07130124B2 Average pitch gratings for optical filtering applications 有权
标题翻译：用于光学滤波应用的平均间距光栅
公开(公告)号：US07130124B2
公开(公告)日：2006-10-31
申请号：US10427790
申请日：2003-04-30
申请人： Andrew A. Ketterson , Jose L. Jimenez , Christopher T. Youtsey
发明人： Andrew A. Ketterson , Jose L. Jimenez , Christopher T. Youtsey
IPC分类号： G02B5/18
CPC分类号： H01S5/125 , G02B5/1861 , H01S5/06256 , H01S5/1209 , H01S5/1215 , H01S5/1246 , H01S5/4068 , H01S5/4087 , Y10S359/90
摘要： A pitch averaging Bragg grating includes a plurality of grating peaks spaced by different pitch values. By selecting the different pitch values to have an average pitch value equal to a target pitch value, the pitch averaging Bragg grating can be made to perform like a constant pitch Bragg grating having a fixed pitch at the target pitch value. The different pitch values can be multiples of the minimum placement resolution of a production tool to be used to produce the Bragg grating. The pitch averaging Bragg grating can be used in place of constant pitch Bragg gratings in optical devices and systems, such as DFB lasers, DBR lasers, optical spectral filters, multi-wavelength laser arrays, and WDM systems.
摘要翻译：间距平均布拉格光栅包括由不同间距值间隔开的多个光栅峰。通过选择不同的音调值以使平均音调值等于目标音调值，可以使间距平均布拉格光栅在目标音调值处具有固定间距的恒定间距布拉格光栅。不同的间距值可以是用于生产布拉格光栅的生产工具的最小布局分辨率的倍数。间距平均布喇格光栅可以用于光学器件和系统中的恒定间距布拉格光栅，例如DFB激光器，DBR激光器，光谱滤波器，多波长激光器阵列和WDM系统。

22. 发明申请

US20040218275A1 Average pitch gratings for optical filtering applications 有权
标题翻译：用于光学滤波应用的平均间距光栅
公开(公告)号：US20040218275A1
公开(公告)日：2004-11-04
申请号：US10427790
申请日：2003-04-30
申请人： TriQuint Semiconductor, Inc.
发明人： Andrew A. Ketterson , Jose L. Jimenez , Christopher T. Youtsey
IPC分类号： G02B005/18
CPC分类号： H01S5/125 , G02B5/1861 , H01S5/06256 , H01S5/1209 , H01S5/1215 , H01S5/1246 , H01S5/4068 , H01S5/4087 , Y10S359/90
摘要： A pitch averaging Bragg grating includes a plurality of grating peaks spaced by different pitch values. By selecting the different pitch values to have an average pitch value equal to a target pitch value, the pitch averaging Bragg grating can be made to perform like a constant pitch Bragg grating having a fixed pitch at the target pitch value. The different pitch values can be multiples of the minimum placement resolution of a production tool to be used to produce the Bragg grating. The pitch averaging Bragg grating can be used in place of constant pitch Bragg gratings in optical devices and systems, such as DFB lasers, DBR lasers, optical spectral filters, multi-wavelength laser arrays, and WDM systems.
摘要翻译：间距平均布拉格光栅包括由不同间距值间隔开的多个光栅峰。通过选择不同的音调值以使平均音调值等于目标音调值，可以使间距平均布拉格光栅在目标音调值处具有固定间距的恒定间距布拉格光栅。不同的间距值可以是用于生产布拉格光栅的生产工具的最小布局分辨率的倍数。间距平均布喇格光栅可以用于光学器件和系统中的恒定间距布拉格光栅，例如DFB激光器，DBR激光器，光谱滤波器，多波长激光器阵列和WDM系统。

23. 发明授权

US09350138B2 Single-step-grown transversely coupled distributed feedback laser 有权
标题翻译：单步生长横向耦合分布反馈激光器
公开(公告)号：US09350138B2
公开(公告)日：2016-05-24
申请号：US14182335
申请日：2014-02-18
申请人： Innolume GmbH
发明人： Alexey Gubenko , Daniil Livshits , Sergey Mikhrin , Igor Krestnikov
IPC分类号： H01S5/00 , H01S5/125 , H01S5/22 , H01S5/12 , H01S5/187 , H01S5/02 , H01S5/343 , H01S5/026 , H01S5/0625 , H01S5/10 , H01S5/30
CPC分类号： H01S5/125 , H01S5/0202 , H01S5/026 , H01S5/06256 , H01S5/1085 , H01S5/12 , H01S5/1221 , H01S5/124 , H01S5/1246 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2215 , H01S5/3054 , H01S5/34313
摘要： A transversely-coupled distributed feedback laser diode, which can be processed without overgrowth, is disclosed. The laser is made from an epitaxial heterostructure including a core layer located between two cladding layers, a cap layer, and at least one Al-rich layer. The lateral waveguide is formed by selective oxidation of the Al-rich layer. A surface corrugated grating is formed above the waveguide. The heteroepitaxial structure is designed so that the core layer is placed in close proximity to the top of the laser structure to provide a required overlap between the light and the grating. In order to avoid inadmissible optical losses, there is no metallization above the waveguide. Instead, the metal contacts are offset at some distance, so that the current has to spread in the cap layer before vertical injection into the core layer.
摘要翻译：公开了一种横向耦合的分布反馈激光二极管，可以在不产生过度增长的情况下进行处理。激光器由外延异质结构制成，其包括位于两个覆层之间的芯层，覆盖层和至少一个富Al层。侧向波导通过富Al层的选择性氧化形成。表面波纹光栅形成在波导上方。异质外延结构被设计成使得芯层被放置在紧邻激光结构的顶部以提供光与光栅之间所需的重叠。为了避免不可接受的光损耗，在波导上方没有金属化。相反，金属触点偏移一定距离，使得电流必须在垂直注入芯层之前在盖层中扩展。

24. 发明申请

US20150357791A1 TUNABLE LASER WITH MULTIPLE IN-LINE SECTIONS 审中-公开
标题翻译：具有多个在线部分的可激光激光
公开(公告)号：US20150357791A1
公开(公告)日：2015-12-10
申请号：US13916652
申请日：2013-06-13
申请人： Applied Optoelectronics, Inc.
发明人： Jun Zheng , Klaus Alexander Anselm , Yi Wang , I-Lung Ho , Huanlin Zhang , Dion McIntosh-Dorsey
IPC分类号： H01S5/06 , H01S5/062 , H04B10/572 , H01S5/028 , H04J14/02 , H01S5/40 , H01S5/00
CPC分类号： H01S5/0612 , H01S5/005 , H01S5/0287 , H01S5/06246 , H01S5/06258 , H01S5/1215 , H01S5/1246 , H01S5/4031 , H01S5/4087 , H04B10/572 , H04J14/02 , H04J14/0245
摘要： A tunable laser with multiple in-line sections generally includes a semiconductor laser body with a plurality of in-line laser sections each configured to be driven independently to generate laser light at a wavelength within a different respective wavelength range. The wavelength of the light generated in each of the laser sections may be tuned, in response to a temperature change, to a channel wavelength within the respective wavelength range. The laser light generated in each selected one of the laser sections is emitted from a front facet of the laser body. By selectively generating light in one or more of the laser sections, one or more channel wavelengths may be selected for lasing and transmission. The tunable laser with multiple in-line sections may be used, for example, in a tunable transmitter in an optical networking unit (ONU) in a WDM passive optical network (PON) to select a transmission channel wavelength.
摘要翻译：具有多个在线部分的可调激光器通常包括具有多个在线激光部分的半导体激光器体，每个激光器部分被配置为独立地被驱动以产生在不同的相应波长范围内的波长的激光。在每个激光部分中产生的光的波长可以响应于温度变化被调谐到相应波长范围内的通道波长。在每个选择的一个激光部分中产生的激光从激光体的前刻面发射。通过选择性地在一个或多个激光部分中产生光，可以选择一个或多个信道波长用于激光和透射。具有多个在线部分的可调激光器可以用于例如WDM无源光网络（PON）中的光网络单元（ONU）中的可调谐发射机中，以选择传输信道波长。

25. 发明申请

US20150155687A1 SEMICONDUCTOR LASER AND OPTICAL SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体激光器和光学半导体器件
公开(公告)号：US20150155687A1
公开(公告)日：2015-06-04
申请号：US14589412
申请日：2015-01-05
申请人： Oclaro Japan, Inc.
发明人： Kouji NAKAHARA , Yuki WAKAYAMA
IPC分类号： H01S5/12 , H01S5/028 , H01S5/343
CPC分类号： H01S5/1215 , H01S5/0014 , H01S5/0287 , H01S5/06213 , H01S5/12 , H01S5/124 , H01S5/1246 , H01S5/164 , H01S5/34313
摘要： In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 π to equal to or less than 0.9 π, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.
摘要翻译：在包括具有第一间距的第一衍射光栅区域，具有第二间距的第二衍射光栅区域和具有第一间距的第三衍射光栅区域的衍射光栅的半导体激光器中，涂覆有端面的抗反射膜并且反射膜涂覆在相对端面上，第一衍射光栅区域大于第三衍射光栅区域，并且形成第二衍射光栅区域，使得第一衍射光栅区域的第一并且第三衍射光栅区域在等于或大于0.6＆amp; 等于或小于0.9＆pgr，相位在第一和第二衍射光栅区域之间的边界上连续，并且相位在第二和第三衍射光栅区域之间的边界上是连续的。

26. 发明申请

US20140133505A1 Edge-Emitting Semiconductor Laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US20140133505A1
公开(公告)日：2014-05-15
申请号：US14118819
申请日：2012-06-08
申请人： Hans Lindberg
发明人： Hans Lindberg
IPC分类号： H01S5/10
CPC分类号： H01S5/1003 , H01S5/026 , H01S5/0425 , H01S5/0654 , H01S5/1032 , H01S5/1203 , H01S5/1228 , H01S5/1246 , H01S5/4031 , H01S5/4087
摘要： An edge-emitting semiconductor laser includes a first waveguide layer, into which an active layer that generates laser radiation is embedded. The laser also includes a second waveguide layer, into which no active layer is embedded. The laser radiation generated in the active layer forms a standing wave, which has respective intensity maxima in the first waveguide layer and corresponding intensity minima in the second waveguide layer and respective intensity minima in the first waveguide layer and corresponding intensity maxima in the second waveguide layer at periodic intervals in a beam direction of the semiconductor laser. An at least regionally periodic contact structure is arranged at a surface of the edge-emitting semiconductor laser. A period length of the contact structure is equal to a period length of the standing wave, such that the semiconductor laser has an emission wavelength that is set by the period length of the contact structure.
摘要翻译：边缘发射半导体激光器包括嵌入有产生激光辐射的有源层的第一波导层。该激光器还包括其中没有嵌入有源层的第二波导层。在有源层中产生的激光辐射形成驻波，其在第一波导层中具有相应的强度最大值，并且在第二波导层中具有相应的强度最小值，并且在第一波导层中具有相应的强度最小值，并且在第二波导层中具有相应的强度最大值在半导体激光器的光束方向上的周期性间隔。在边缘发射半导体激光器的表面设置至少区域性周期性接触结构。接触结构的周期长度等于驻波的周期长度，使得半导体激光器具有由接触结构的周期长度设定的发射波长。

27. 发明授权

US08588266B2 Wavelength tunable semiconductor laser having two difractive grating areas 有权
$Wavelength tunable semiconductor laser having two difractive grating areas$
标题翻译：具有两个折射光栅区域的波长可调谐半导体激光器
公开(公告)号：US08588266B2
公开(公告)日：2013-11-19
申请号：US11499651
申请日：2006-08-07
申请人： Takuya Fujii
发明人： Takuya Fujii
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： H01S5/12 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/1209 , H01S5/1212 , H01S5/1221 , H01S5/1231 , H01S5/124 , H01S5/1246 , H01S5/125
摘要： A semiconductor laser has a first diffractive grating area. The first diffractive grating area has a plurality of segments. Each segment has a first area including a diffractive grating and a second area that is space area combined to the first area. Optical lengths of at least two of the second areas are different from each other. A refractive-index of each of the segments are changeable.
摘要翻译：半导体激光器具有第一衍射光栅区域。第一衍射光栅区域具有多个段。每个段具有包括衍射光栅的第一区域和与第一区域组合的空间区域的第二区域。至少两个第二区域的光学长度彼此不同。每个段的折射率是可变的。

28. 发明授权

US08304267B2 Laser device, laser module, semiconductor laser and fabrication method of semiconductor laser 有权
标题翻译：激光器件，激光器模块，半导体激光器和半导体激光器的制造方法
公开(公告)号：US08304267B2
公开(公告)日：2012-11-06
申请号：US12574988
申请日：2009-10-07
申请人： Takuya Fujii
发明人： Takuya Fujii
IPC分类号： H01L33/60 , H01S5/187
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/1209 , H01S5/1212 , H01S5/1221 , H01S5/1231 , H01S5/124 , H01S5/1246
摘要： A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region.
摘要翻译：半导体激光器具有第一和第二衍射光栅区域。第一衍射光栅区具有段，具有增益，并且具有反射光谱的第一离散峰。第二衍射光栅区域具有彼此组合的段，并具有反射光谱的第二离散峰。每个段具有衍射光栅和空间区域。衍射光栅的间距基本相等。第二离散峰的波长间隔与第一离散峰的波长间隔不同。当第一离散峰和第二离散峰的给定峰之间的关系发生变化时，第一离散峰的给定峰的一部分与第二离散峰的一部分重叠。位于第一衍射光栅区域或第二衍射光栅区域中的第一段具有比第一衍射光栅区域和第二衍射光栅区域的其他区段更短或更长的光学长度，其中衍射的间距的一半的奇数倍第一衍射光栅区域的光栅。

29. 发明申请

US20100022044A1 LASER DEVICE, LASER MODULE, SEMICONDUCTOR LASER AND FABRICATION METHOD OF SEMICONDUCTOR LASER 有权
标题翻译：激光器件，激光器模块，半导体激光器和半导体激光器的制造方法
公开(公告)号：US20100022044A1
公开(公告)日：2010-01-28
申请号：US12574988
申请日：2009-10-07
申请人： Takuya FUJII
发明人： Takuya FUJII
IPC分类号： H01L21/30
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/0287 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/1057 , H01S5/106 , H01S5/1064 , H01S5/1209 , H01S5/1212 , H01S5/1221 , H01S5/1231 , H01S5/124 , H01S5/1246
摘要： A semiconductor laser has first and second diffractive grating regions. The first diffractive grating region has segments, has a gain, and has first discrete peaks of a reflection spectrum. The second diffractive grating region has segments combined to each other, and has second discrete peaks of a reflection spectrum. Each segment has a diffractive grating and a space region. Pitches of the diffractive grating are substantially equal to each other. A wavelength interval of the second discrete peaks is different from that of the first discrete peaks. A part of a given peak of the first discrete peaks is overlapped with that of the second discrete peaks when a relationship between the given peaks of the first discrete peaks and the second discrete peaks changes. A first segment located in the first diffractive grating region or the second diffractive grating region has an optical length shorter or longer than the other segments of the first diffractive grating region and the second diffractive grating region by odd multiple of half of the pitch of the diffractive grating of the first diffractive grating region.
摘要翻译：半导体激光器具有第一和第二衍射光栅区域。第一衍射光栅区具有段，具有增益，并且具有反射光谱的第一离散峰。第二衍射光栅区域具有彼此组合的段，并具有反射光谱的第二离散峰。每个段具有衍射光栅和空间区域。衍射光栅的间距基本相等。第二离散峰的波长间隔与第一离散峰的波长间隔不同。当第一离散峰和第二离散峰的给定峰之间的关系发生变化时，第一离散峰的给定峰的一部分与第二离散峰的一部分重叠。位于第一衍射光栅区域或第二衍射光栅区域中的第一段具有比第一衍射光栅区域和第二衍射光栅区域的其他区段更短或更长的光学长度，其中衍射的间距的一半的奇数倍第一衍射光栅区域的光栅。

30. 发明申请

US20040196885A1 Phase-shifted distributed feedback type semiconductor laser diode capable of improving wavelength chirping and external reflection return light characteristics and method for manufacturing the same 审中-公开
标题翻译：能够改善波长啁啾和外部反射返回光特性的相移分布反馈型半导体激光二极管及其制造方法
公开(公告)号：US20040196885A1
公开(公告)日：2004-10-07
申请号：US10827388
申请日：2004-04-19
发明人： Yidong Huang
IPC分类号： H01S003/08
CPC分类号： B82Y20/00 , H01S5/0014 , H01S5/028 , H01S5/0287 , H01S5/06213 , H01S5/0622 , H01S5/12 , H01S5/1221 , H01S5/124 , H01S5/1246 , H01S5/227 , H01S5/34306 , H01S5/3434
摘要： In a distributed feedback type semiconductor layer diode including a semiconductor substrate, an optical guide layer formed on the semiconductor substrate, a diffraction grating having a phase shift region being formed between the semiconductor substrate and the optical guide layer, and an active layer formed on the optical guide layer, nullLnullAnullnullnullnullB where null is a coupling coefficient of the diffraction grating, L is a cavity length of the diode, nullnull is a detuning amount denoted by nullnullnullnullgnullnull where nullg is a gain peak wavelength of the diode and null is an oscillation wavelength of the diode, A is a constant from 0.04 nmnull1 to 0.06 nmnull1, and B is a constant from 3.0 to 5.0.
摘要翻译：在包括半导体衬底的分布式反馈型半导体层二极管，形成在半导体衬底上的导光层，在半导体衬底和导光层之间形成有相移区域的衍射光栅以及形成在该半导体衬底上的有源层光导层，kappaL + A.Deltalambda> = B其中kapp是衍射光栅的耦合系数，L是二极管的腔长度，Deltalambda是由Deltalambda = lambdag-lambda表示的失谐量，其中lambdag是增益峰值二极管的波长和λ是二极管的振荡波长，A是从0.04nm -1到0.06nm -1的常数，B是从3.0到5.0的常数。

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