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21. 发明授权

US08098969B2 Waveguide optically pre-amplified detector with passband wavelength filtering 有权
标题翻译：波导光学预扩增检测器，带通滤波器
公开(公告)号：US08098969B2
公开(公告)日：2012-01-17
申请号：US12632933
申请日：2009-12-08
申请人： Valery Tolstikhin , Fang Wu , Christopher Watson , Yury Logvin , Kirill Pimenov
发明人： Valery Tolstikhin , Fang Wu , Christopher Watson , Yury Logvin , Kirill Pimenov
IPC分类号： G02B6/12
CPC分类号： H01S5/5018 , G02B2006/12121 , G02B2006/12123 , G02B2006/12195 , H01S5/0262 , H01S5/1014
摘要： The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.
摘要翻译：本发明描述了一种集成光子学布置，其可以在由III-V半导体组成并在一个外延生长运行中生长的多导向垂直积分（MGVI）结构中实现，允许将半导体光放大器（SOA）和PIN光电检测器 PIN）结构，其构成了形成MGVI结构的多个垂直集成的波长指定波导的公共波长指定波导。集成包括集成在SOA和PIN之间的波长滤波器，以减少由SOA产生的ASE产生的PIN内的噪声。在本发明的示例性实施例中，波长滤波器在公共波长指定波导内或波长指定波导内集成到MGVI结构中。此外，在其它实施例中，波长滤波器由抵靠集成光子学装置的小平面的薄膜滤光器提供，其中光信号通过光波导耦合，和/或诸如多模干涉装置的附加光学元件耦合。

22. 发明申请

US20110164633A1 WAVELENGTH-CONTROLLED SEMICONDUCTOR LASER DEVICE 有权
标题翻译：波长控制半导体激光器件
公开(公告)号：US20110164633A1
公开(公告)日：2011-07-07
申请号：US13119016
申请日：2009-09-16
申请人： Holger M. Moench , Philipp Gerlach , Mark Carpaij , Alexander M. Van Der Lee
发明人： Holger M. Moench , Philipp Gerlach , Mark Carpaij , Alexander M. Van Der Lee
IPC分类号： H01S5/0687
CPC分类号： H01S5/0262 , H01S5/0261 , H01S5/0264 , H01S5/0425 , H01S5/0612 , H01S5/06808 , H01S5/18347
摘要： A semiconductor laser device comprising a laser diode with an integrated photodiode, wherein one of the components of the laser diode with the integrated photodiode is also used for heating the laser diode. A simpler design of a wavelength-controlled semiconductor laser is thus obtained.
摘要翻译：一种包括具有集成光电二极管的激光二极管的半导体激光器件，其中具有集成光电二极管的激光二极管的一个组件也用于加热激光二极管。因此获得了波长控制的半导体激光器的更简单的设计。

23. 发明申请

US20110135314A1 Waveguide Optically Pre-Amplified Detector with Passband Wavelength Filtering 有权
标题翻译：具有通带波长滤波的波导光学预放大检测器
公开(公告)号：US20110135314A1
公开(公告)日：2011-06-09
申请号：US12632933
申请日：2009-12-08
申请人： Valery Tolstikhin , Fang Wu , Christopher Watson , Yury Logvin , Kirill Pimenov
发明人： Valery Tolstikhin , Fang Wu , Christopher Watson , Yury Logvin , Kirill Pimenov
IPC分类号： H04B10/12
CPC分类号： H01S5/5018 , G02B2006/12121 , G02B2006/12123 , G02B2006/12195 , H01S5/0262 , H01S5/1014
摘要： The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.
摘要翻译：本发明描述了一种集成光子学布置，其可以在由III-V半导体组成并在一个外延生长运行中生长的多导向垂直积分（MGVI）结构中实现，允许将半导体光放大器（SOA）和PIN光电检测器 PIN）结构，其构成了形成MGVI结构的多个垂直集成的波长指定波导的公共波长指定波导。集成包括集成在SOA和PIN之间的波长滤波器，以减少由SOA产生的ASE产生的PIN内的噪声。在本发明的示例性实施例中，波长滤波器在公共波长指定波导内或波长指定波导内集成到MGVI结构中。此外，在其它实施例中，波长滤波器由抵靠集成光子学装置的小平面的薄膜滤光器提供，其中光信号通过光波导耦合，和/或诸如多模干涉装置的附加光学元件耦合。

24. 发明授权

US07885492B2 Transmitter photonic integrated circuit (TxPIC) chips 有权
标题翻译：发射机光子集成电路（TxPIC）芯片
公开(公告)号：US07885492B2
公开(公告)日：2011-02-08
申请号：US10317935
申请日：2002-12-11
申请人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Ting-Kuang Chiang , Marco E. Sosa
发明人： David F. Welch , Vincent G. Dominic , Fred A. Kish, Jr. , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Ting-Kuang Chiang , Marco E. Sosa
IPC分类号： G02B6/12
CPC分类号： G02B6/12011 , B82Y20/00 , G01R31/31728 , G01R31/318511 , G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12021 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/12033 , G02B6/131 , G02B6/136 , G02B6/4204 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , G02F2203/69 , H01L31/125 , H01S5/0014 , H01S5/0085 , H01S5/02248 , H01S5/026 , H01S5/0262 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/06832 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/3408 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/2914 , H04B10/50 , H04J14/02 , H04J14/0246 , H04J14/025 , H04J14/0258 , H04J14/0265 , H04J14/0276 , H04J14/0282
摘要： A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
摘要翻译：一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器并从芯片提供输出波导上的组合输出信号。调制源，组合器和输出波导均集成在同一芯片上。

25. 发明申请

US20100296540A1 Resonant Cavity Complementary Optoelectronic Transistors 有权
标题翻译：谐振腔互补光电晶体管
公开(公告)号：US20100296540A1
公开(公告)日：2010-11-25
申请号：US12470566
申请日：2009-05-22
申请人： James Pan
发明人： James Pan
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/0261 , H01L27/15 , H01S5/0262
摘要： The CMOS field effect transistors, used in microprocessors and other digital VLSI circuits, face major challenges such as thin gate dielectrics leakage and scaling limits, severe short channel effects, limited performance improvement with scaling, complicated fabrication process with added special techniques, and surface mobility degradation. This disclosure proposes a new CMOS-compatible optoelectronic transistor. The current is much higher than the MOS transistors, due to the high carrier mobility with bulk transportation. The optoelectronic transistors are scalable to the sub-nanometer ranges without short channel effects. It is also suitable for low power applications and ULSI circuits. The new transistor consists of a laser or LED diode as drain or source, and a photo sensor diode (avalanche photo diode) as source or drain. The transistor is turned on by applying a gate voltage, similar to the CMOS transistors, and a laser or LED light signal is sent to the nearby photo diode, causing an avalanche breakdown and high drain current. The transistor is surrounded by dielectrics and metal isolations, which serve as a metal box or cavity, so the generated laser or LED lights are confined and reflected back from the metal. The drain current increases exponentially with the drain or gate voltage. This exponential drain current vs. drain or gate voltage characteristics makes the optoelectronic transistor run much faster than the transitional linear MOSFET.The optic transistor current-voltage characteristics are totally different from transitional CMOS transistors.
摘要翻译：在微处理器和其他数字VLSI电路中使用的CMOS场效应晶体管面临诸如薄栅极电介质泄漏和结垢限制，严重的短沟道效应，缩放的有限性能改进，附加特殊技术的复杂制造工艺和表面迁移率等主要挑战降解。本公开提出了一种新的兼容CMOS的光电晶体管。电流远高于MOS晶体管，这是由于大容量运输的高载流子迁移率。光电子晶体管可以扩展到亚纳米范围，而没有短信道效应。它也适用于低功率应用和ULSI电路。新的晶体管由激光器或LED二极管作为漏极或源极，以及作为源极或漏极的光电二极管（雪崩光电二极管）组成。通过施加类似于CMOS晶体管的栅极电压来接通晶体管，并且将激光或LED光信号发送到附近的光电二极管，导致雪崩击穿和高漏极电流。晶体管被电介质和金属隔离物所围绕，它们用作金属盒或空腔，因此产生的激光或LED灯被限制并从金属反射回来。漏极电流随漏极或栅极电压呈指数增长。该指数漏极电流与漏极或栅极电压特性使得光电晶体管的运行比过渡线性MOSFET快得多。光晶体管电流 - 电压特性与过渡CMOS晶体管完全不同。

26. 发明授权

US07738522B2 Optical phase conjugation laser diode 失效
标题翻译：光学相位共轭激光二极管
公开(公告)号：US07738522B2
公开(公告)日：2010-06-15
申请号：US12009755
申请日：2008-01-22
申请人： Joseph Reid Henrichs
发明人： Joseph Reid Henrichs
IPC分类号： H01S5/00
CPC分类号： H01S5/18391 , B82Y20/00 , H01S3/10076 , H01S5/0207 , H01S5/02212 , H01S5/02284 , H01S5/0261 , H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/145 , H01S5/18308 , H01S5/18319 , H01S5/18358 , H01S5/18388 , H01S5/305 , H01S5/3054 , H01S5/34306 , H01S2301/18
摘要： A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stabilized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps.
摘要翻译：一种相位共轭谐振器，其包括半导体激光二极管装置，该半导体激光二极管装置包括后向反射六边形六面体形立方体棱镜的相位共轭阵列，电和/或光泵浦增益区域，分布式布拉格反射镜叠层，提供半球形激光发射输出金属化反射镜的高斯模式。其中，光学相位共轭用于中和自发发射，声学声子，量子噪声，增益饱和度，衍射和其他腔内像差和失真的相位扰动贡献，其通常使得经受放大振荡的受激发射失稳本发明相位共轭谐振器。导致稳定的大功率激光发射输出成单个低阶基本横腔模式和反向腔内啁啾，提供高速内部调制，能够以大约20吉比特/秒传输数据。

27. 发明申请

US20100029026A1 METHOD OF FABRICATING AN OPTICAL ANALYSIS DEVICE COMPRISING A QUANTUM CASCADE LASER AND A QUANTUM DETECTOR 审中-公开
标题翻译：制造包含量子激光和量子检测器的光学分析装置的方法
公开(公告)号：US20100029026A1
公开(公告)日：2010-02-04
申请号：US12533429
申请日：2009-07-31
申请人： Vincent Berger , Mathieu Carras
发明人： Vincent Berger , Mathieu Carras
IPC分类号： H01L21/00
CPC分类号： H01L31/173 , B82Y20/00 , G01S7/4811 , H01L31/035236 , H01S5/0262 , H01S5/3402
摘要： The invention relates to a method of fabricating an optical device for analysing a scene, comprising an emitter and a detector in the mid-infrared or far-infrared, characterized in that it comprises: the production of a stack of semiconductor layers grown epitaxially on the surface of a semiconductor substrate, certain layers of which are doped; the production of a first, quantum cascade laser emission device (L) emitting an analysis beam in the mid-infrared or far-infrared, from a first level called the emission level, into the stack of semiconductor layers; and the production of a second, quantum detector device (D) capable of detecting a beam backscattered by the scene to be analysed, at the same level in the stack as the emission level.
摘要翻译：本发明涉及一种制造用于分析场景的光学装置的方法，其包括在中红外或远红外线中的发射器和检测器，其特征在于，其包括：生成外延生长的半导体层堆叠半导体衬底的表面，其某些层被掺杂; 制造从称为发射电平的第一级发射中红外或远红外线的分析光束的第一量子级联激光发射装置（L）进入半导体层堆叠; 以及产生能够检测由待分析场景反向散射的光束的第二量子检测器装置（D），其在堆叠中与发射水平相同的水平。

28. 发明申请

US20080205461A1 Optical phase conjugation laser diode 失效
标题翻译：光学相位共轭激光二极管
公开(公告)号：US20080205461A1
公开(公告)日：2008-08-28
申请号：US12009755
申请日：2008-01-22
申请人： Joseph Henrichs
发明人： Joseph Henrichs
IPC分类号： H01S3/08
CPC分类号： H01S5/18391 , B82Y20/00 , H01S3/10076 , H01S5/0207 , H01S5/02212 , H01S5/02284 , H01S5/0261 , H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/145 , H01S5/18308 , H01S5/18319 , H01S5/18358 , H01S5/18388 , H01S5/305 , H01S5/3054 , H01S5/34306 , H01S2301/18
摘要： A phase-conjugating resonator that includes a semiconductor laser diode apparatus that comprises a phase-conjugating array of retro-reflecting hexagon apertured hexahedral shaped corner-cube prisms, an electrically and/or optically pumped gain-region, a distributed bragg reflecting mirror-stack, a gaussian mode providing hemispherical shaped laser-emission-output metalized mirror. Wherein, optical phase conjugation is used to neutralize the phase perturbating contribution of spontaneous-emission, acoustic phonons, quantum-noise, gain-saturation, diffraction, and other intracavity aberrations and distortions that typically destabilize any stimulated-emission made to undergo amplifying oscillation within the inventions phase-conjugating resonator. Resulting in stablized high-power laser-emission-output into a single low-order fundamental transverse cavity mode and reversal of intra-cavity chirp that provides for high-speed internal modulation capable of transmitting data at around 20-Gigabits/ps.
摘要翻译：一种相位共轭谐振器，其包括半导体激光二极管装置，该半导体激光二极管装置包括后向反射六边形六面体形立方体棱镜的相位共轭阵列，电和/或光泵浦增益区域，分布式布拉格反射镜叠层，提供半球形激光发射输出金属化反射镜的高斯模式。其中，光学相位共轭用于中和自发发射，声学声子，量子噪声，增益饱和度，衍射和其他腔内像差和失真的相位扰动贡献，其通常使得经受放大振荡的受激发射失稳本发明相位共轭谐振器。导致稳定的大功率激光发射输出成单个低阶基本横腔模式和反向腔内啁啾，提供高速内部调制，能够以大约20吉比特/秒传输数据。

29. 发明申请

US20080138088A1 MONOLITHIC TRANSMITTER PHOTONIC INTEGRATED CIRCUIT (TXPIC) HAVING TUNABLE MODULATED SOURCES WITH FEEDBACK SYSTEM FOR SOURCE POWER LEVEL OR WAVELENGTH TUNING 有权
标题翻译：具有反馈系统的单向调制电源的单片发射机光电集成电路（TXPIC），用于源电源或波长调谐
公开(公告)号：US20080138088A1
公开(公告)日：2008-06-12
申请号：US11773938
申请日：2007-07-05
申请人： David F. Welch , Vincent G. Dominic , Fred A. Kish , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Drew D. Perkins
发明人： David F. Welch , Vincent G. Dominic , Fred A. Kish , Mark J. Missey , Radhakrishnan L. Nagarajan , Atul Mathur , Frank H. Peters , Robert B. Taylor , Matthew L. Mitchell , Alan C. Nilsson , Stephen G. Grubb , Richard P. Schneider , Charles H. Joyner , Jonas Webjorn , Drew D. Perkins
IPC分类号： H04B10/04
CPC分类号： H04B10/506 , H01S5/0085 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0262 , H01S5/0265 , H01S5/0268 , H01S5/12 , H01S5/4031 , H01S5/4087
摘要： A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.
摘要翻译：一种包括调制源阵列的光子集成电路（PIC）芯片，每个调制源提供在不同于其它调制源的信道波长的信道波长处的调制信号输出，以及具有光耦合到接收到的所有信号输出的输入的波长选择性组合器并从芯片提供输出波导上的组合输出信号。调制源，组合器和输出波导均集成在同一芯片上。

30. 发明申请

US20080063407A1 DIGITAL OPTICAL NETWORK ARCHITECTURE 有权
标题翻译：数字光网络架构
公开(公告)号：US20080063407A1
公开(公告)日：2008-03-13
申请号：US11938761
申请日：2007-11-12
申请人： Jagdeep Singh , Drew Perkins , David Welch , Mark Yin , Fred Kish , Stephen Grubb , Robert Taylor , Vincent Dominic , Matthew Mitchell
发明人： Jagdeep Singh , Drew Perkins , David Welch , Mark Yin , Fred Kish , Stephen Grubb , Robert Taylor , Vincent Dominic , Matthew Mitchell
IPC分类号： H04B10/00
CPC分类号： G02B6/12011 , B82Y20/00 , G01R31/31728 , G01R31/318511 , G02B6/12004 , G02B6/12007 , G02B6/12019 , G02B6/12021 , G02B6/12023 , G02B6/12026 , G02B6/12028 , G02B6/12033 , G02B6/131 , G02B6/136 , G02B6/4204 , G02F1/01725 , G02F2001/0175 , G02F2001/01758 , G02F2203/69 , H01L31/125 , H01S5/0014 , H01S5/0085 , H01S5/02248 , H01S5/026 , H01S5/0262 , H01S5/0264 , H01S5/0265 , H01S5/0268 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/06832 , H01S5/12 , H01S5/1228 , H01S5/2077 , H01S5/22 , H01S5/3408 , H01S5/4031 , H01S5/4087 , H01S5/50 , H04B10/2914 , H04B10/50 , H04J14/02 , H04J14/0246 , H04J14/025 , H04J14/0258 , H04J14/0265 , H04J14/0276 , H04J14/0282
摘要： A digital optical network (DON) is a new approach to low-cost, more compact optical transmitter modules and optical receiver modules for deployment in optical transport networks (OTNs). One important aspect of a digital optical network is the incorporation in these modules of transmitter photonic integrated circuit (TxPIC) chips and receiver photonic integrated circuit (TxPIC) chips in lieu of discrete modulated sources and detector sources with discrete multiplexers or demultiplexers.
摘要翻译：数字光网络（DON）是用于部署在光传输网络（OTN）中的低成本，更紧凑的光发射机模块和光接收机模块的新方法。数字光网络的一个重要方面是将发射机光子集成电路（TxPIC）芯片和接收机光子集成电路（TxPIC）芯片的这些模块并入，以代替具有分立多路复用器或解复用器的离散调制源和检测器源。

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