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    • 23. 发明授权
    • Field emission device and field emission display
    • 场发射装置和场发射显示
    • US08581486B2
    • 2013-11-12
    • US13151458
    • 2011-06-02
    • Peng LiuDuan-Liang ZhouPi-Jin ChenShou-Shan Fan
    • Peng LiuDuan-Liang ZhouPi-Jin ChenShou-Shan Fan
    • H01J9/02
    • H01J1/304H01J1/32H01J29/04H01J31/127H01J2329/0492
    • The present disclosure provides a field emission device. The field emission device includes an insulating substrate having a first surface, a first electrode, a second electrode, at least one cathode emitter and a secondary electron emitter. The first electrode and the second electrode are spaced from each other and are located on the first surface of the insulating substrate. The cathode emitter is electrically connected to the first electrode and spaced from the second electrode. A secondary electron emitter is spaced from the cathode emitter. The secondary electron emitter has an electron emitting surface exposed to the cathode emitter. A secondary electron emitter is spaced from the cathode emitter. The cathode emitter is oriented toward the secondary electron emitter.
    • 本公开提供了一种场致发射装置。 场发射器件包括具有第一表面,第一电极,第二电极,至少一个阴极发射极和二次电子发射体的绝缘衬底。 第一电极和第二电极彼此间隔开并且位于绝缘基板的第一表面上。 阴极发射极电连接到第一电极并与第二电极间隔开。 二次电子发射器与阴极发射器间隔开。 二次电子发射器具有暴露于阴极发射极的电子发射表面。 二次电子发射器与阴极发射器间隔开。 阴极发射极朝向二次电子发射体。
    • 24. 发明授权
    • Nanopillar arrays for electron emission
    • 用于电子发射的纳米柱阵列
    • US07884324B2
    • 2011-02-08
    • US12130103
    • 2008-05-30
    • Robert H. BlickMichael S. WestphallHua QinLloyd M. Smith
    • Robert H. BlickMichael S. WestphallHua QinLloyd M. Smith
    • G01N23/00G01N13/10H01J49/08
    • H01J1/32H01J29/023H01J43/246Y10S977/762
    • The present invention provides systems, devices, device components and structures for modulating the intensity and/or energies of electrons, including a beam of incident electrons. In some embodiments, for example, the present invention provides nano-structured semiconductor membrane structures capable of generating secondary electron emission. Nano-structured semiconductor membranes of this aspect of the present invention include membranes having an array of nanopillar structures capable of providing electron emission for amplification, filtering and/or detection of incident radiation, for example secondary electron emission and/or field emission. Nano-structured semiconductor membranes of the present invention are useful as converters wherein interaction of incident primary electrons and nanopillars of the nanopillar array generates secondary emission. Nano-structured semiconductor membranes of this aspect of the present invention are also useful as directed charge amplifiers wherein secondary emission from a nanopillar array provides gain functionality for increasing the intensity of radiation comprising incident electrons.
    • 本发明提供了用于调制包括入射电子束的电子的强度和/或能量的系统,装置,器件组件和结构。 在一些实施例中,例如,本发明提供能够产生二次电子发射的纳米结构的半导体膜结构。 本发明该方面的纳米结构半导体膜包括具有能够提供用于放射,滤波和/或检测入射辐射的电子发射的纳米柱结构阵列的膜,例如二次电子发射和/或场发射。 本发明的纳米结构半导体膜可用作其中纳米柱阵列的入射一次电子和纳米柱的相互作用产生二次发射的转换器。 本发明该方面的纳米结构半导体膜也可用作定向电荷放大器,其中来自纳米柱阵列的二次发射提供了用于增加包括入射电子的辐射强度的增益功能。
    • 30. 发明授权
    • Electron-emitting apparatus
    • 电子发射装置
    • US07304440B2
    • 2007-12-04
    • US11236422
    • 2005-09-27
    • Iwao OhwadaTakayoshi AkaoTetsuyuki KamejiHirokazu Nakamura
    • Iwao OhwadaTakayoshi AkaoTetsuyuki KamejiHirokazu Nakamura
    • G05F1/00
    • H01J1/30B82Y10/00G09G3/22G09G2320/0238H01J1/312H01J1/32H01J31/127H01L2924/0002H01L2924/00
    • An electron emitting apparatus includes a lower electrode, an emitter section made of a dielectric material, a plurality of upper electrodes having micro through holes, and a collector electrode opposing the upper electrodes. In this electron-emitting apparatus, electrons are accumulated in the emitter section by controlling the potential difference (drive voltage) between the lower and upper electrodes with respect to the potential of the lower electrode to a negative predetermined voltage. At this time, the collector electrode of the electron-emitting apparatus is grounded. Thus, unnecessary electron-emitting is suppressed. Subsequently, the drive voltage is changed to a positive predetermined voltage. As a result, polarization reversal occurs in the emitter section, and accumulated electros are emitted through the micro through holes in the upper electrodes by Coulomb repulsion. At this time, a positive voltage Vc is applied to the collector electrode to give large energy to accelerate the electrons.
    • 电子发射装置包括下电极,由介电材料制成的发射极部分,具有微通孔的多个上电极和与上电极相对的集电极。 在该电子发射装置中,通过将下电极和上电极之间的电位差(驱动电压)相对于下电极的电位控制为负的预定电压,将电子累积在发射极部分。 此时,电子发射设备的集电极接地。 因此,抑制不必要的电子发射。 随后,驱动电压变为正的预定电压。 结果,在发射极部分发生极化反转,并且通过库仑斥力通过上电极中的微通孔发射积聚的电子。 此时,向集电极施加正电压Vc以产生大的能量来加速电子。