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21. 发明授权

US07379363B2 Method and apparatus for implementing high speed memory 有权
标题翻译：实现高速存储器的方法和装置
公开(公告)号：US07379363B2
公开(公告)日：2008-05-27
申请号：US11692108
申请日：2007-03-27
申请人： Chang-Ting Chen
发明人： Chang-Ting Chen
IPC分类号： G11C7/00
CPC分类号： G11C7/22 , G11C2207/2236 , G11C2207/2245
摘要： Various methods and apparatuses permit high speed reads of memory. Portions of data are copied and stored on other word lines. By reading a copy of data that is stored on memory cells accessed by a word line that is already precharged, a latency specification can be met which does not allow time for precharging a second word line.
摘要翻译：各种方法和装置允许高速读取存储器。数据部分被复制并存储在其他字线上。通过读取存储在已经被预充电的字线访问的存储器单元上的数据的副本，可以满足延迟规定，这不允许用于预充电第二字线的时间。

22. 发明申请

US20060262616A1 Method and apparatus for implementing high speed memory 有权
标题翻译：实现高速存储器的方法和装置
公开(公告)号：US20060262616A1
公开(公告)日：2006-11-23
申请号：US11131580
申请日：2005-05-18
申请人： Chang-Ting Chen
发明人： Chang-Ting Chen
IPC分类号： G11C7/00
CPC分类号： G11C7/22 , G11C2207/2236 , G11C2207/2245
摘要： Various methods and apparatuses permit high speed reads of memory. Portions of data are copied and stored on other word lines. By reading a copy of data that is stored on memory cells accessed by a word line that is already precharged, a latency specification can be met which does not allow time for precharging a second word line.
摘要翻译：各种方法和装置允许高速读取存储器。数据部分被复制并存储在其他字线上。通过读取存储在已经被预充电的字线访问的存储器单元上的数据的副本，可以满足延迟规定，这不允许用于预充电第二字线的时间。

23. 发明申请

US20190189217A1 MEMORY SYSTEM AND METHOD OF OPERATING THE SAME 审中-公开
公开(公告)号：US20190189217A1
公开(公告)日：2019-06-20
申请号：US16055793
申请日：2018-08-06
申请人： SK hynix Inc.
发明人： Ji Man HONG
IPC分类号： G11C16/10 , G11C11/56 , G11C11/4093 , G11C29/42 , G11C16/34 , G11C16/04
CPC分类号： G11C16/10 , G11C7/02 , G11C11/4093 , G11C11/5628 , G11C16/0483 , G11C16/26 , G11C16/3404 , G11C16/3427 , G11C16/3454 , G11C29/021 , G11C29/028 , G11C29/42 , G11C2029/0409 , G11C2029/0411 , G11C2207/2236
摘要： A memory system may include performing a first read operation on first data stored in first memory cells coupled to a first word line, performing an error correction operation on the first data, performing an interference program operation on second memory cells coupled to a second word line when the error correction operation fails, and performing a second read operation on the first data stored in the first memory cells after performing the interference program operation.

24. 发明申请

US20180314446A1 STORAGE DEVICE AND DATA STORING METHOD THEREOF 审中-公开
公开(公告)号：US20180314446A1
公开(公告)日：2018-11-01
申请号：US16029049
申请日：2018-07-06
申请人： SILICON MOTION, INC.
发明人： Ching-Ke Chen , Yu-Chi Lai
IPC分类号： G06F3/06 , G11C16/34 , G11C16/26 , G11C11/56
CPC分类号： G06F3/0619 , G06F3/065 , G06F3/0656 , G06F3/068 , G11C11/56 , G11C11/5642 , G11C16/26 , G11C16/349 , G11C2207/2236 , G11C2211/5641
摘要： A storage device and a data storing method thereof are provided. The storage device includes a data storage medium and the control unit. The data storage medium includes a data storage area with a plurality of first type of data blocks. When a data reading operation is executed on a current data block of the data storage medium, the control unit determines whether a read count of the current data block is greater than a first threshold, determines whether the current data block is one of the first type of data blocks and generate a determination result according to the result, the control unit selects a plurality of first type of data blocks and switches the selected data blocks to a fast mode. Finally, the control unit moves data stored in the current data block to the selected data blocks under fast mode.

25. 发明申请

US20180247948A1 MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY 审中-公开
公开(公告)号：US20180247948A1
公开(公告)日：2018-08-30
申请号：US15700376
申请日：2017-09-11
申请人： Toshiba Memory Corporation
发明人： Shinichi KANNO
IPC分类号： H01L27/11524 , H01L27/105
CPC分类号： H01L27/11524 , G06F12/0238 , G06F12/0246 , G06F2212/1024 , G06F2212/7201 , G06F2212/7203 , G06F2212/7205 , G06F2212/7208 , G11C16/10 , G11C16/16 , G11C2207/2236 , H01L27/1052
摘要： According to one embodiment, a memory system classifies nonvolatile memory dies connected to channels into die groups such that each of the nonvolatile memory dies belongs to only one die group. The memory system performs a data write/read operation for one die group of the die groups in accordance with an I/O command from a host designating one of regions including at least one region corresponding to each die group. When the memory system receives a command including a parameter designating a copy source die group and a copy destination die group from the host, the memory system performs an operation of copying valid data in the copy source die group to the copy destination die group.

26. 发明授权

US10019350B1 Dram and method for accessing a dram 有权
公开(公告)号：US10019350B1
公开(公告)日：2018-07-10
申请号：US15667202
申请日：2017-08-02
申请人： NANYA TECHNOLOGY CORPORATION
发明人： Chung-Hsun Lee , Hsien-Wen Liu
IPC分类号： G11C11/24 , G06F12/02 , G06F12/06 , G11C11/408
CPC分类号： G06F12/0207 , G06F12/0292 , G06F12/0607 , G06F2212/1032 , G11C11/406 , G11C11/4076 , G11C11/408 , G11C2207/2236
摘要： The present disclosure provides a method. The method includes copying a data stored in memory cells associated with a normal word line subject to a row hammer effect into memory cells associated with a hot word line before a condition is satisfied, wherein the condition includes an access frequency of the normal word line reaching a threshold frequency; accessing, based on a logical address, the normal word line before the condition is satisfied; accessing, based on the logical address, the hot word line associated with the copied data only if the condition is satisfied; and accessing the data no longer from the normal word line only if the condition is satisfied.

27. 发明授权

US09971541B2 Apparatuses and methods for data movement 有权
公开(公告)号：US09971541B2
公开(公告)日：2018-05-15
申请号：US15045750
申请日：2016-02-17
申请人： Micron Technology, Inc.
发明人： Perry V. Lea , Glen E. Hush
IPC分类号： G06F3/06 , G11C7/10
CPC分类号： G06F3/0647 , G06F3/061 , G06F3/0625 , G06F3/0685 , G11C7/1006 , G11C7/1072 , G11C11/4076 , G11C11/4091 , G11C11/4097 , G11C2207/2236 , G11C2207/2245
摘要： The present disclosure includes apparatuses and methods for data movement. An example apparatus includes a memory device that includes a plurality of subarrays of memory cells and sensing circuitry coupled to the plurality of subarrays. The sensing circuitry includes a sense amplifier and a compute component. The memory device also includes a plurality of subarray controllers. Each subarray controller of the plurality of subarray controllers is coupled to a respective subarray of the plurality of subarrays and is configured to direct performance of an operation with respect to data stored in the respective subarray of the plurality of subarrays. The memory device is configured to move a data value corresponding to a result of an operation with respect to data stored in a first subarray of the plurality of subarrays to a memory cell in a second subarray of the plurality of subarrays.

28. 发明申请

US20170235515A1 APPARATUSES AND METHODS FOR DATA MOVEMENT 有权
公开(公告)号：US20170235515A1
公开(公告)日：2017-08-17
申请号：US15045750
申请日：2016-02-17
申请人： Micron Technology, Inc.
发明人： Perry V. Lea , Glen E. Hush
IPC分类号： G06F3/06 , G11C7/10
CPC分类号： G06F3/0647 , G06F3/061 , G06F3/0625 , G06F3/0685 , G11C7/1006 , G11C7/1072 , G11C11/4076 , G11C11/4091 , G11C11/4097 , G11C2207/2236 , G11C2207/2245
摘要： The present disclosure includes apparatuses and methods for data movement. An example apparatus includes a memory device that includes a plurality of subarrays of memory cells and sensing circuitry coupled to the plurality of subarrays. The sensing circuitry includes a sense amplifier and a compute component. The memory device also includes a plurality of subarray controllers. Each subarray controller of the plurality of subarray controllers is coupled to a respective subarray of the plurality of subarrays and is configured to direct performance of an operation with respect to data stored in the respective subarray of the plurality of subarrays. The memory device is configured to move a data value corresponding to a result of an operation with respect to data stored in a first subarray of the plurality of subarrays to a memory cell in a second subarray of the plurality of subarrays.

29. 发明授权

US09263101B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US09263101B2
公开(公告)日：2016-02-16
申请号：US14522345
申请日：2014-10-23
申请人： SK hynix Inc.
发明人： Kwan-Weon Kim
IPC分类号： G11C7/00 , G11C7/22 , G11C5/14 , G11C8/00 , G11C7/10
CPC分类号： G11C7/10 , G11C7/22 , G11C8/12 , G11C8/18 , G11C2207/2236
摘要： A semiconductor memory device includes first and second memory regions configured to store data in a mirrored fashion with respect to each other during a high speed operation period; and a read operation block configured to repeatedly and alternately select the first and second memory regions and read data from a selected memory region, in the case where the first or second memory region is repeatedly selected n read operations of at least two times during the high speed operation period.
摘要翻译：半导体存储器件包括第一和第二存储器区域，其被配置为在高速运行周期期间以相对于彼此的镜像方式存储数据; 以及读操作块，被配置为重复地且交替地选择第一和第二存储区域并从选择的存储器区域读取数据，在重复选择第一或第二存储器区域的情况下，在高位期间读取至少两次的操作速度运行期。

30. 发明申请

US20140185395A1 METHODS OF COPYING A PAGE IN A MEMORY DEVICE AND METHODS OF MANAGING PAGES IN A MEMORY SYSTEM 有权
标题翻译：在存储器件中复制页面的方法和在存储器系统中管理页面的方法
公开(公告)号：US20140185395A1
公开(公告)日：2014-07-03
申请号：US14054784
申请日：2013-10-15
申请人： Seong-Young Seo
发明人： Seong-Young Seo
IPC分类号： G11C7/00
CPC分类号： G11C7/22 , G11C7/10 , G11C7/1048 , G11C7/1051 , G11C2207/2236
摘要： A method of copying a page in a memory device having a plurality of memory blocks and a plurality of sets of bit lines is disclosed, wherein each of the plurality of memory blocks includes a plurality of pages, and each set of bit lines corresponds to a respective memory block, wherein first bit lines of a source memory block that includes a source page are respectively coupled to second bit lines of a target memory block that includes a target page. The method includes disconnecting between the first bit lines of thea source memory block including a source page and from the second bit lines of a the target memory block including a target page; transferring data stored in the source page to the first bit lines of the source memory block; transferring the data from the first bit lines of the source memory block to the second bit lines of the target memory block; and writing the data transferred to the second bit lines of the target memory block into the target page.
摘要翻译：公开了一种在具有多个存储块和多组位线的存储器件中复制页面的方法，其中多个存储器块中的每一个包括多个页面，并且每组位线对应于相应的存储块，其中包括源页的源存储器块的第一位线分别耦合到包括目标页的目标存储器块的第二位线。该方法包括在包括源页面的源存储器块的第一位线与包括目标页面的目标存储器块的第二位线之间断开; 将存储在源页面中的数据传送到源存储器块的第一位线; 将数据从源存储器块的第一位线传送到目标存储器块的第二位线; 并将传送到目标存储器块的第二位线的数据写入目标页面。

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