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    • 21. 发明申请
    • Apparatus for producing refractory compound powders
    • 耐火复合粉末的制造装置
    • US20130236582A1
    • 2013-09-12
    • US13414403
    • 2012-03-07
    • Bo Liu
    • Bo Liu
    • B22F9/08
    • C01B6/24B22F9/08B22F2009/0824B22F2999/00C01B6/00C01B9/00C01B13/326C01B17/20C01B21/06C01B21/0602B22F2201/10
    • A gas atomization apparatus is disclosed for producing high purity fine refractory compound powders. After the system reaches high vacuum, a first stage inert atomizing gas breaks superheated metal melt into droplets and a second stage reactive atomizing gas breaks the droplets further into ultrafine droplets while reacts with them to form refractory compound powders. The first stage atomizing gas is inert gas able to break up melt into droplets and prevent crust formation on the nozzle front. A reaction time enhancer is arranged at bottom of reaction chamber to furnish a reactive gas flow in a reverse direction of the falling droplets and powders. Under the reverse gas flow, the falling droplets and powders change moving direction and travel longer distance in reaction chamber to increase reaction time. This apparatus can produce refractory powders with ultrahigh purity and uniform powder size while maintain high process energy efficiency.
    • 公开了一种用于生产高纯度精细耐火复合粉末的气体雾化装置。 在系统达到高真空之后,第一级惰性雾化气体将过热的金属熔体分解成液滴,第二级反应性雾化气体进一步将液滴分解成超细液滴,同时与其反应形成难熔化合物粉末。 第一级雾化气体是惰性气体,能够将熔体分解成液滴并防止喷嘴前端上的外壳形成。 反应时间增强剂被布置在反应室的底部,以在落下的液滴和粉末的相反方向上提供反应气流。 在反向气流下,滴落的液滴和粉末改变移动方向,并在反应室中行进更长的距离以增加反应时间。 该设备可以生产具有超高纯度和均匀粉末尺寸的耐火粉末,同时保持高的工艺能量效率。
    • 22. 发明申请
    • METHOD OF TREATING METALLIFERROUS MATERIALS
    • 处理金属材料的方法
    • US20110052481A1
    • 2011-03-03
    • US12990283
    • 2009-04-29
    • Dmitri TerekhovNanthakumar Victor-EmmanuelSerge KovtunKamran Khozan
    • Dmitri TerekhovNanthakumar Victor-EmmanuelSerge KovtunKamran Khozan
    • C01B9/00
    • C01G23/02C01B9/00C01B9/02C01B9/04C01B9/06C01G25/04C01G27/04C01G31/04C01G33/00C01G35/02C01G49/00C22B5/04C22B15/0019C22B23/005C22B34/1222C22B34/1277C22B34/22C22B34/24Y02P10/23
    • There is provided a process of treating a metalliferrous material including at least one metal material fraction. Each one of the at least one metal material fraction includes a respective metal, wherein the respective metal is a transition metal. Each one of the at least one metal material fraction also includes a respective first operative material fraction and a respective second operative material fraction. The respective first operative material fraction consists of an elemental form of the respective metal, and the respective second operative material fraction consists of at least one oxide of the respective metal. The method includes providing reagent material including at least one diatomic halogen and at least one aluminium halide. The reagent material is contacted with the metalliferrous material in a reaction zone so as to effect a reactive process which effects production of an intermediate reaction product including at least one produced metal halide. Each one of the at least one produced metal halide includes a respective metal corresponding to the respective metal of a respective one of the at least one metal material fraction. A separation fraction is separated from the intermediate reaction product. The separation fraction includes at least one recovered metal halide.
    • 提供了一种处理包括至少一种金属材料部分的金属材料的方法。 所述至少一种金属材料部分中的每一个包括相应的金属,其中相应的金属是过渡金属。 所述至少一种金属材料部分中的每一个还包括相应的第一操作材料部分和相应的第二操作材料部分。 相应的第一操作材料部分由相应金属的元素形式组成,并且相应的第二操作材料部分由相应金属的至少一种氧化物组成。 该方法包括提供包括至少一种双原子卤素和至少一种卤化铝的试剂材料。 试剂材料在反应区中与金属材料接触,以便实现产生包含至少一种生产的金属卤化物的中间反应产物的反应过程。 所述至少一种所生产的金属卤化物中的每一种包括对应于所述至少一种金属材料部分中的相应一种的相应金属的相应金属。 分离级分与中间反应产物分离。 分离级分包括至少一种回收的金属卤化物。
    • 25. 发明授权
    • Method of purifying alkaline-earth and alkali-earth halides for crystal growth
    • 碱土金属和碱土金属卤化物的纯化方法用于晶体生长
    • US07364620B2
    • 2008-04-29
    • US10977523
    • 2004-10-28
    • Christopher Daniel Jones
    • Christopher Daniel Jones
    • C30B13/02
    • C01B13/0233C01B9/00C01B9/08C30B11/00C30B29/12
    • An improved technique that reduces the potential for trapped impurities and/or ensuring desired stoichiometry of a grown crystal. Improved contaminant removal is obtained by bubbling a scavenger gas, such as fluorine gas or hydrogen fluoride gas, through a melt of alkaline- or alkali-earth halides, to improve the purity of the melt by removing more volatile metal halides and oxygen contained within the melt. By reacting after the raw material has melted, any oxygen or metal impurities trapped in the raw material is free to react with the scavenger. A desired stoichiometry is achieved as the alkaline- or alkali-earth metals react with the halide in the scavenger gas. Decreasing the amount of impurities in the melt, and using a desired stoichiometeric melt, improves the radiation hardness and transmission properties of resulting ingot grown from the purified raw material. Additionally, this method may decrease the amount of time needed for outgassing. The method may also be used to form a high purity pre-melt, which in turn may be used to grow an ingot with higher purity.
    • 降低捕获的杂质的潜力和/或确保生长晶体的所需化学计量的改进技术。 通过将清除剂气体(如氟气或氟化氢气体)鼓泡通过碱土金属或碱土金属卤化物的熔体来获得改进的污染物去除,以通过除去更多的挥发性金属卤化物和 熔化。 在原料熔化后,通过反应,残留在原料中的氧或金属杂质与清除剂反应。 当碱金属或碱土金属与清除剂气体中的卤化物反应时,实现了所需的化学计量。 降低熔体中杂质的量并使用所需的化学计量熔体,提高从纯化原料生长的所得锭的辐射硬度和透射性能。 此外,该方法可能减少排气所需的时间。 该方法还可用于形成高纯度预熔体,其又可用于生长具有较高纯度的锭。