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21. 发明申请

US20170066647A1 MEMS DEVICES AND METHODS OF FORMING SAME 审中-公开
标题翻译： MEMS器件及其形成方法
公开(公告)号：US20170066647A1
公开(公告)日：2017-03-09
申请号：US15354747
申请日：2016-11-17
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
摘要： A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
摘要翻译：微机电系统（MEMS）装置可以包括在第一基板上的MEMS结构。 MEMS结构包括可移动元件。在第一衬底上沉积第一导电材料并蚀刻第二衬底中的沟槽。用第二导电材料填充沟槽并在第二导电材料和第二衬底上沉积第三导电材料。将第一基板和第二基板接合并使第二基板的背面变薄，从而在沟槽中露出第二导电材料。

22. 发明授权

US09586812B2 Device with vertically integrated sensors and method of fabrication 有权
标题翻译：具有垂直集成传感器和制造方法的装置
公开(公告)号：US09586812B2
公开(公告)日：2017-03-07
申请号：US14682282
申请日：2015-04-09
申请人： FREESCALE SEMICONDUCTOR, INC.
发明人： Matthieu Lagouge , Mamur Chowdhury
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81B7/0074 , B81B7/0006 , B81B7/0041 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81C1/00301 , G01P15/0802 , G01P15/125
摘要： A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.
摘要翻译：一种装置包括感测不同物理刺激的垂直和横向间隔的传感器。装置的制造需要形成具有第一和第二晶片层的器件结构，其间插入有信号布线层。一个或多个传感器的主动传感器元件形成在第一晶片层中，并且第三晶片层与第二晶片层连接以产生其中有源换能器元件所在的一个或多个空腔。沟槽延伸穿过第二晶片并且穿过信号路由层的一部分。沟槽将由沟槽围绕的第二晶片层的区域与第二晶片层的其余部分电隔离。另一传感器的另一个有源传感器元件形成在该区域。形成在第二晶片层中的换能器元件可以是用于传感器装置的压力传感器的隔膜。

23. 发明授权

US09562767B2 Systems and methods for improving MEMS gyroscope start time 有权
标题翻译：改进MEMS陀螺仪启动时间的系统和方法
公开(公告)号：US09562767B2
公开(公告)日：2017-02-07
申请号：US14458029
申请日：2014-08-12
申请人： Honeywell International Inc.
发明人： Mark W. Weber , Dang Tu Van-Cao , Marie Annette Cox , Douglas Campbell MacGugan
IPC分类号： G01C19/00 , G01C19/5712 , B81C1/00 , B81B7/02 , G01C19/5776
CPC分类号： G01C19/5712 , B81B7/02 , B81C1/00301 , B81C2203/0792 , G01C19/5776
摘要： Systems and methods for improving MEMS gyroscope start time are provided. In one embodiment, a circuit board for a MEMS gyroscope system comprises: a proof mass assembly; a proof mass control loop coupled to the proof mass assembly by a first proof mass motion sensor pickup line and a second proof mass motion sensor pickup line, where the proof mass control loop generates a set of drive signals that operate the proof mass assembly using a first capacitive signal from the first proof mass motion sensor pickup line and a second capacitive signal from the second proof mass motion sensor pickup line; and a tunable capacitive coupler connected to at least one of the first or the second proof mass motion sensor pickup lines, where the tunable capacitive coupler varies at least one of the first and second charge signals as a function of the drive signals.
摘要翻译：提供了改进MEMS陀螺仪启动时间的系统和方法。在一个实施例中，用于MEMS陀螺仪系统的电路板包括：证明质量组件; 通过第一检测质量运动传感器拾取线和第二证明质量运动传感器拾取线耦合到证明质量组件的证明质量控制环路，其中证明质量控制环路产生一组驱动信号，该组驱动信号使用来自第一检测质量运动传感器拾取线的第一电容信号和来自第二检测质量运动传感器拾取线的第二电容信号; 以及可调电容耦合器，其连接到第一或第二检验质量运动传感器拾取线中的至少一个，其中可调谐电容耦合器根据驱动信号改变第一和第二充电信号中的至少一个。

24. 发明申请

US20170029271A1 COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) ULTRASONIC TRANSDUCERS AND METHODS FOR FORMING THE SAME 有权
标题翻译：补充金属氧化物半导体（CMOS）超声波传感器及其形成方法
公开(公告)号：US20170029271A1
公开(公告)日：2017-02-02
申请号：US15291697
申请日：2016-10-12
申请人： Butterfly Network, Inc.
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
IPC分类号： B81C1/00 , G01N29/24 , B06B1/02 , B81B7/00
CPC分类号： B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
摘要翻译：描述了互补金属氧化物半导体（CMOS）超声波换能器（CUT）以及用于形成CUT的方法。 CUT可以包括用于与换能器连接的单体集成超声换能器和集成电路。 CUT可用于超声波装置，例如超声成像装置和/或高强度聚焦超声（HIFU）装置。

25. 发明申请

US20170022054A1 ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER 审中-公开
标题翻译：带有红外吸收结构层的氮化铝（AlN）器件
公开(公告)号：US20170022054A1
公开(公告)日：2017-01-26
申请号：US15291599
申请日：2016-10-12
申请人： INVENSENSE, INC.
发明人： Julius Ming-Lin Tsai , Michael J. Daneman
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81B7/007 , B81B3/0029 , B81B2201/032 , B81B2207/012 , B81B2207/07 , B81C1/00182 , B81C1/00269 , B81C1/00301 , B81C2201/013 , B81C2201/019 , B81C2203/0109 , B81C2203/0792
摘要： A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.
摘要翻译：公开了一种微机电系统装置。微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

26. 发明申请

US20170001861A1 METHOD OF INCREASING MEMS ENCLOSURE PRESSURE USING OUTGASSING MATERIAL 有权
标题翻译：使用外加材料增加MEMS外壳压力的方法
公开(公告)号：US20170001861A1
公开(公告)日：2017-01-05
申请号：US15265668
申请日：2016-09-14
申请人： InvenSense, Inc.
发明人： Cerina ZHANG , Martin LIM , Jongwoo SHIN , Joseph SEEGER
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00301 , B81B7/007 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81C1/0023 , B81C1/00238 , B81C1/00246 , B81C1/00269 , B81C2201/0104 , B81C2201/0132 , B81C2203/0145 , B81C2203/019 , B81C2203/035 , B81C2203/0792
摘要： Semiconductor manufacturing processes include providing a first substrate having a first passivation layer disposed above a patterned top-level metal layer, and further having a second passivation layer disposed over the first passivation layer; the second passivation layer has a top surface. The processes further include forming an opening in a first portion of the second passivation layer, and the opening exposes a portion of a surface of the first passivation layer. The processes further include patterning the second and first passivation layers to expose portions of the patterned top-level metal layer and bonding a second substrate and the first substrate to each other. The bonding occurs within a temperature range in which at least the exposed portion of the first passivation layer undergoes outgassing.
摘要翻译：半导体制造工艺包括提供第一衬底，其具有设置在图案化顶层金属层上方的第一钝化层，并且还具有设置在第一钝化层上的第二钝化层; 第二钝化层具有顶表面。所述方法还包括在第二钝化层的第一部分中形成开口，并且开口暴露第一钝化层的表面的一部分。所述方法还包括图案化第二钝化层和第一钝化层以暴露图案化顶层金属层的部分并将第二基板和第一基板彼此接合。接合发生在至少第一钝化层的暴露部分经历脱气的温度范围内。

27. 发明授权

US09530749B2 Coupling of side surface contacts to a circuit platform 有权
标题翻译：将侧面触点耦合到电路平台
公开(公告)号：US09530749B2
公开(公告)日：2016-12-27
申请号：US14698684
申请日：2015-04-28
申请人： Invensas Corporation
发明人： Reynaldo Co , Willmar Subido , Hoang Nguyen , Marjorie Cara , Wael Zohni , Christopher W. Lattin
IPC分类号： H01L23/02 , H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44 , H01L21/48 , H01L21/50 , H05K1/11 , H05K1/14 , H01L23/00 , B81B7/00 , B81C1/00 , B23K20/00
CPC分类号： H01L24/49 , B81B7/007 , B81B7/0074 , B81B2207/05 , B81C1/00301 , H01L24/48 , H01L24/85 , H01L2224/16225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/4903 , H01L2224/85045 , H01L2224/85203 , H01L2924/00014 , H01L2924/1461 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/05599
摘要： An apparatus relates generally to a microelectromechanical system component. In such an apparatus, the microelectromechanical system component has a lower surface, an upper surface, first side surfaces, and second side surfaces. Surface area of the first side surfaces is greater than surface area of the second side surfaces. The microelectromechanical system component has a plurality of wire bond wires attached to and extending away from a first side surface of the first side surfaces. The wire bond wires are self-supporting and cantilevered with respect to the first side surface of the first side surfaces.
摘要翻译：一种装置一般涉及微机电系统部件。在这种装置中，微机电系统部件具有下表面，上表面，第一侧表面和第二侧表面。第一侧面的表面积大于第二侧面的表面积。微电子机械系统部件具有多个连接到第一侧表面的第一侧表面并且远离第一侧表面的线接合线。线接合线相对于第一侧表面的第一侧表面是自支撑的和悬臂的。

28. 发明授权

US09527723B2 Semiconductor device and method of forming microelectromechanical systems (MEMS) package 有权
标题翻译：半导体器件和形成微机电系统（MEMS）封装的方法
公开(公告)号：US09527723B2
公开(公告)日：2016-12-27
申请号：US14643074
申请日：2015-03-10
申请人： STATS ChipPAC, Ltd.
发明人： Yaojian Lin , Won Kyoung Choi , Kang Chen , Ivan Micallef
IPC分类号： B81B7/00 , B81C1/00 , H01L21/56 , H01L23/538 , H01L23/552 , H01L23/00 , H01L25/10 , H01L25/00
CPC分类号： B81B7/007 , B81C1/0023 , B81C1/00301 , B81C1/00904 , H01L21/561 , H01L21/568 , H01L23/5389 , H01L23/552 , H01L24/16 , H01L24/19 , H01L24/81 , H01L24/96 , H01L24/97 , H01L25/105 , H01L25/50 , H01L2224/03 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/12105 , H01L2224/131 , H01L2224/16227 , H01L2224/16237 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/73265 , H01L2224/73267 , H01L2224/81005 , H01L2224/81191 , H01L2224/81815 , H01L2224/94 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/13091 , H01L2924/15 , H01L2924/15311 , H01L2924/16251 , H01L2924/181 , H01L2924/18162 , H01L2924/3511 , H01L2224/11 , H01L2224/81 , H01L2924/00012 , H01L2224/83 , H01L2224/85 , H01L2924/00 , H01L2924/00014 , H01L2924/014
摘要： A semiconductor device has a first semiconductor die and a modular interconnect structure adjacent to the first semiconductor die. An encapsulant is deposited over the first semiconductor die and modular interconnect structure as a reconstituted panel. An interconnect structure is formed over the first semiconductor die and modular interconnect structure. An active area of the first semiconductor die remains devoid of the interconnect structure. A second semiconductor die is mounted over the first semiconductor die with an active surface of the second semiconductor die oriented toward an active surface of the first semiconductor die. The reconstituted panel is singulated before or after mounting the second semiconductor die. The first or second semiconductor die includes a microelectromechanical system (MEMS). The second semiconductor die includes an encapsulant and an interconnect structure formed over the second semiconductor die. Alternatively, the second semiconductor die is mounted to an interposer disposed over the interconnect structure.
摘要翻译：半导体器件具有与第一半导体管芯相邻的第一半导体管芯和模块化互连结构。密封剂沉积在第一半导体管芯和模块化互连结构上，作为重构面板。互连结构形成在第一半导体管芯和模块互连结构之上。第一半导体管芯的有源区域没有互连结构。第二半导体管芯安装在第一半导体管芯上，第二半导体管芯的有源表面朝向第一半导体管芯的有效表面。复原的面板在安装第二半导体管芯之前或之后被分割。第一或第二半导体管芯包括微机电系统（MEMS）。第二半导体管芯包括密封剂和形成在第二半导体管芯上的互连结构。或者，第二半导体管芯安装到设置在互连结构上的插入器。

29. 发明授权

US09505948B2 Thermally decomposable polymer compositions for forming microelectronic assemblies 有权
标题翻译：用于形成微电子组件的热分解聚合物组合物
公开(公告)号：US09505948B2
公开(公告)日：2016-11-29
申请号：US14647330
申请日：2013-12-12
申请人： PROMERUS, LLC
发明人： W. C. Peter Tsang , Andrew Bell , Hongshi Zhen , Keitaro Seto
IPC分类号： C09D167/02 , B81C1/00 , B23K35/36 , H05K3/34
CPC分类号： B23K35/3618 , B23K35/0244 , B23K35/025 , B23K35/0255 , B23K35/36 , B23K35/3612 , B23K35/3613 , B81C1/00301 , B81C1/00317 , B81C2201/019 , C09D167/02 , H05K3/3489 , H05K2203/0485
摘要： A thermally decomposable polymer composition comprising a polyester containing repeating units of an ester of diglycolic acid and difunctional tertiary alcohol are disclosed, which are useful in the forming of microelectronic assemblies. A representative example of a composition comprises a thermally decomposable polymer of the formula: wherein n is at least about 20, which provides both tackiness and solder fluxing, among other benefits.
摘要翻译：其中m为至少约100。

30. 发明授权

US09499396B2 MEMS devices and methods of forming same 有权
公开(公告)号：US09499396B2
公开(公告)日：2016-11-22
申请号：US14624008
申请日：2015-02-17
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
摘要： A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.

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