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21. 发明授权

US09130531B1 Semiconductor arrangement with thermal insulation configuration 有权
标题翻译：具有隔热配置的半导体布置
公开(公告)号：US09130531B1
公开(公告)日：2015-09-08
申请号：US14226897
申请日：2014-03-27
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-wen Cheng , Chia-Hua Chu , Yi-Chuan Teng
IPC分类号： H01L21/00 , H03H3/007
CPC分类号： B81B7/0083 , B81B3/0081 , B81B7/0038 , B81B7/008 , B81C1/00238 , B81C1/00269 , B81C1/00285 , B81C2203/0771 , B81C2203/0792 , H01L25/0657 , H01L27/092 , H01L2924/0002 , H03H3/0073 , H01L2924/00
摘要： Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The MEMS wafer comprises a thermal insulator air gap formed between a sensing layer and a membrane. An ambient pressure chamber is formed between the CMOS wafer and the membrane of the MEMS wafer. The ambient pressure chamber is configured as a second thermal insulator air gap. The thermal insulator air gap and the second thermal insulator air gap protect portions of the semiconductor arrangement, such as the MEMS wafer, from heat originating from the CMOS wafer, which can otherwise damage such portions of the semiconductor arrangement. In some embodiments, one or more buffer layers are formed over the cap wafer as stress buffers.
摘要翻译：除此之外，本文提供了一种或多种用于形成这种半导体布置的半导体布置和技术。半导体装置包括盖晶片，微机电系统（MEMS）晶片和互补金属氧化物半导体（CMOS）晶片。 MEMS晶片包括形成在感测层和膜之间的热绝缘体气隙。在CMOS晶片和MEMS晶片的膜之间形成环境压力室。环境压力室被配置为第二绝热体气隙。热绝缘体气隙和第二绝热体气隙保护诸如MEMS晶片的半导体装置的部分免受来自CMOS晶片的热量，否则可能损坏半导体装置的这些部分。在一些实施例中，一个或多个缓冲层作为应力缓冲器形成在帽晶片之上。

22. 发明申请

US20150239733A1 SEMICONDUCTOR DIE WITH HIGH PRESSURE CAVITY 有权
标题翻译：具有高压腔的半导体模具
公开(公告)号：US20150239733A1
公开(公告)日：2015-08-27
申请号：US14188649
申请日：2014-02-24
申请人： Matthieu Lagouge
发明人： Matthieu Lagouge
IPC分类号： B81B7/02 , B81C1/00
CPC分类号： B81C1/00285 , B81B2201/0235 , B81B2201/0242 , B81C2203/0118
摘要： A semiconductor die includes a device structure having a micro-electronic device located at a surface of a substrate and a cap coupled to the device structure with the micro-electronic device positioned in a cavity located between the cap and the substrate. A sacrificial material is provided within the cavity, coupling the cap to the device structure. The sacrificial material is heated in the cavity to cause the sacrificial material to decompose to a gaseous species. The presence of the gaseous species in the cavity increases a pressure level in the cavity from an initial pressure to a final pressure.
摘要翻译：半导体管芯包括具有位于衬底表面处的微电子器件的器件结构，以及耦合到器件结构的帽，微电子器件定位在位于帽和衬底之间的空腔中。在空腔内提供牺牲材料，将盖连接到装置结构。牺牲材料在空腔中被加热以使牺牲材料分解成气态物质。空腔中的气态物质的存在使空腔中的压力水平从初始压力增加到最终压力。

23. 发明申请

US20150130039A1 LAYER ARRANGEMENT AND A WAFER LEVEL PACKAGE COMPRISING THE LAYER ARRANGEMENT 有权
标题翻译：层布置和包含层布置的波浪层包
公开(公告)号：US20150130039A1
公开(公告)日：2015-05-14
申请号：US14372015
申请日：2013-06-18
申请人： Agency for Science, Technology and Research
发明人： Vivek Chidambaram , Ling Xie , Ranganathan Nagarajan , Bangtao Chen , Beng Yeung Ho
IPC分类号： H01L23/26 , B81B7/00 , B81C1/00
CPC分类号： H01L23/26 , B81B7/0038 , B81C1/00285 , C22C14/00 , C22C19/03 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a layer arrangement and a wafer level package comprising the layer arrangement, and in particular, the layer arrangement comprises a getter layer and further comprises a sacrificial layer. The wafer level package may be used in microelectromechanical systems (MEMS) packaging at a vacuum level of about 10 mTorr or less such as close to 1 mTorr (i.e. MEMS vacuum packaging).
摘要翻译：本发明涉及一种层布置和包括层布置的晶片级封装，并且具体地，该层布置包括吸气剂层并且还包括牺牲层。晶片级封装可以在大约10mTorr或更小的真空度，例如接近1mTorr（即MEMS真空封装）的微电子机械系统（MEMS）封装中使用。

24. 发明申请

US20150104895A1 METHOD OF FABRICATING MEMS DEVICES HAVING A PLURALITY OF CAVITIES 有权
标题翻译：制造具有多个CAVITIES的MEMS器件的方法
公开(公告)号：US20150104895A1
公开(公告)日：2015-04-16
申请号：US14577628
申请日：2014-12-19
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Shyh-Wei Cheng , Jui-Chun Jui-Chen , Hsi-Cheng Hsu , Chih-Yu Wang , Jung-Kuo Tu , Che-Jung Chu , Yu-Ting Hsu
IPC分类号： B81C1/00 , B81C3/00
CPC分类号： B81C1/00277 , B81B7/0041 , B81B7/02 , B81C1/0023 , B81C1/00269 , B81C1/00285 , B81C1/00293 , B81C3/001 , B81C2203/0118
摘要： A method for forming an integrated circuit having Micro-electromechanical Systems (MEMS) includes forming at least two recesses into a first layer, forming at least two recesses into a second layer, the at least two recesses of the second layer being complementary to the recesses of the first layer. An intermediate layer is bonded onto the second layer, the intermediate layer includes through-holes corresponding to the recesses of the second layer. The first layer is bonded to the intermediate layer such that cavities are formed, the cavities to act as operating environments for MEMS devices. The two cavities have different pressures.
摘要翻译：一种用于形成具有微机电系统（MEMS）的集成电路的方法包括：将至少两个凹陷形成到第一层中，将至少两个凹陷形成第二层，所述第二层的至少两个凹槽与凹部互补的第一层。中间层结合到第二层上，中间层包括对应于第二层的凹部的通孔。第一层被结合到中间层，使得形成空腔，空腔用作MEMS器件的操作环境。两个腔体具有不同的压力。

25. 发明申请

US20140346657A1 THIN FILM CAPPING 有权
标题翻译：薄膜覆盖
公开(公告)号：US20140346657A1
公开(公告)日：2014-11-27
申请号：US14365235
申请日：2012-12-17
申请人： SILEX MICROSYSTEMS AB
发明人： Thorbjorn Ebefors , Niklas Svedin
IPC分类号： B81C1/00 , B81B7/00
CPC分类号： B81C1/00285 , B81B7/0038 , B81C1/00293 , B81C2203/0136 , B81C2203/0145
摘要： A method for sealing cavities in micro-electronic/-mechanical system (MEMS) devices to provide a controlled atmosphere within the sealed cavity includes providing a semiconductor substrate on which a template is provided on a localized area of the substrate. The template defines the interior shape of the cavity. Holes are made so as to enable venting of the cavity to provide a desired atmosphere to enter into the cavity through the hole. Finally, a sealing material is provided in the hole to seal the cavity. The sealing can be made by compression and/or melting of the sealing material.
摘要翻译：一种用于在微电子/机械系统（MEMS）装置中密封空腔以在密封空腔内提供受控气氛的方法包括提供其上在基板的局部区域上提供模板的半导体衬底。模板定义了腔的内部形状。孔被制成以便能够排出空腔以提供期望的气氛以通过孔进入空腔。最后，在孔中设置密封材料以密封空腔。密封可以通过密封材料的压缩和/或熔化来制造。

26. 发明申请

US20140306312A1 MEMS Sensor Packaging and Method Thereof 有权
标题翻译： MEMS传感器封装及其方法
公开(公告)号：US20140306312A1
公开(公告)日：2014-10-16
申请号：US14357046
申请日：2012-11-09
申请人： U Electronics Co., Ltd.
发明人： Yong Hee Han , Hyung Won Kim , Mi Sook Ahn
IPC分类号： B81B7/00 , B81C1/00 , H01L31/02
CPC分类号： B81B7/0038 , B81B7/007 , B81B2201/0207 , B81B2201/0235 , B81B2201/0242 , B81B2207/096 , B81C1/00269 , B81C1/00285 , B81C2203/0118 , G01P15/0802 , H01L31/02016 , H01L2224/291 , H01L2924/014
摘要： A micro electro mechanical systems (MEMS sensor packaging includes a first wafer having a readout integrated circuit (ROIC) formed thereon., a second wafer disposed corresponding to the first wafer and having a concave portion on one side thereof and a MEMS sensor prepared on the concave portion, joint solders formed along a surrounding of the MEMS sensor and sealing the MEMS sensor jointing the first and second wafers, and pad solders formed to electrically connect the ROIC circuit of the first wafer and the MEMS sensor of the second wafer. According to the present disclosure, in joining and packaging a wafer having the ROIC formed thereon and a wafer having the MEMS sensor formed thereon, the size of a package can be reduced and an electric signal can be stably provided by forming internally pad solders for electrically connecting the ROIC and the MEMS sensor.
摘要翻译：微电子机械系统（MEMS传感器封装包括其上形成有读出集成电路（ROIC）的第一晶片），与第一晶片相对设置并且在其一侧具有凹部的第二晶片和在其上制备的MEMS传感器凹部，沿着MEMS传感器的周围形成的接合焊料，并密封连接第一和第二晶片的MEMS传感器，以及形成为将第一晶片的ROIC电路电连接到第二晶片的MEMS传感器的焊盘焊接，根据本公开内容中，在其上形成有ROIC的晶片和其上形成有MEMS传感器的晶片的接合和封装中，可以减小封装的尺寸，并且可以通过形成用于电连接的内部焊盘焊料来稳定地提供电信号 ROIC和MEMS传感器。

27. 发明申请

US20140260612A1 Composite Sensor and Method for Manufacturing The Same 审中-公开
标题翻译：复合传感器及其制造方法
公开(公告)号：US20140260612A1
公开(公告)日：2014-09-18
申请号：US14353635
申请日：2011-11-28
申请人： Takanori Aono , Kengo Suzuki , Masahide Hayashi , Heewon Jeong
发明人： Takanori Aono , Kengo Suzuki , Masahide Hayashi , Heewon Jeong
IPC分类号： G01C19/5705
CPC分类号： G01C19/5705 , B81B2201/0235 , B81B2201/0242 , B81C1/00285 , G01C19/5783 , G01P15/0802 , G01P2015/088
摘要： The disclosure provides a composite sensor with high reliability and a method for manufacturing the same. A moving body of an acceleration sensor and an oscillator of an angular velocity sensor are provided on the same sensor wafer, while being partitioned by a wall, and a cap wafer is formed to have a gap that corresponds to each of the sensors. A through hole and a bump are formed in a sensor sealing portion, the acceleration sensor is sealed in an air atmosphere in a first sealing process, and in a second sealing process, the angular velocity sensor is sealed by bringing the sensors and the cap into contact with each other and joining the sensors and the cap in a vacuum atmosphere. Thereafter, a composite sensor wafer is cut, a circuit board and a wiring board are mounted thereon, and a composite sensor is formed.
摘要翻译：本公开提供了具有高可靠性的复合传感器及其制造方法。加速度传感器的移动体和角速度传感器的振荡器设置在相同的传感器晶片上，同时由壁分隔，并且盖晶片形成为具有与每个传感器对应的间隙。在传感器密封部中形成有贯通孔和凸块，在第一密封工序中将加速度传感器密封在空气气氛中，在第二密封工序中，通过将传感器和盖体彼此接触并在真空环境中连接传感器和盖子。此后，将复合传感器晶片切割，电路板和布线板安装在其上，并且形成复合传感器。

28. 发明授权

US08772883B2 Sealed cavity and method for producing such a sealed cavity 有权
标题翻译：密封腔和制造这种密封腔的方法
公开(公告)号：US08772883B2
公开(公告)日：2014-07-08
申请号：US13381241
申请日：2010-07-06
申请人： Jean-Louis Pornin , Fabrice Jacquet
发明人： Jean-Louis Pornin , Fabrice Jacquet
IPC分类号： H01L29/84
CPC分类号： B81C1/00285 , B81B2203/0384 , B81C2203/0136 , B81C2203/0145
摘要： A method for producing a sealed cavity, including: a) producing a sacrificial layer on a substrate; b) producing a cover layer covering at least the sacrificial layer and a portion of the face of the substrate not covered by the sacrificial layer, the cover layer including lateral flanks forming, with the substrate, an angle of less than 90°; c) producing a hole through one of the lateral flanks of the cover layer such that a maximum distance between the substrate and an edge of the hole is less than approximately 3 μm, the hole crossing a portion of the cover layer deposited on a portion of the substrate not covered by the sacrificial layer; d) eliminating the sacrificial layer through the hole, forming the cavity; and e) depositing at least one material plugging the hole in a sealed fashion.
摘要翻译：一种密封空腔的制造方法，包括：a）在基板上制造牺牲层; b）产生覆盖层，该覆盖层至少覆盖牺牲层和未被牺牲层覆盖的衬底的一部分表面，覆盖层包括侧面，其与衬底形成小于90°的角度; c）通过覆盖层的侧面之一产生孔，使得基板和孔的边缘之间的最大距离小于约3μm，穿过覆盖层的一部分上的空穴沉积在所述基板未被所述牺牲层覆盖; d）通过孔消除牺牲层，形成空腔; 以及e）以密封方式沉积至少一种堵塞所述孔的材料。

29. 发明授权

US08310155B2 Devices including, methods using, and compositions of reflowable getters 有权
公开(公告)号：US08310155B2
公开(公告)日：2012-11-13
申请号：US13197299
申请日：2011-08-03
申请人： Pierre-Marc Allemand
发明人： Pierre-Marc Allemand
IPC分类号： H05B33/04
CPC分类号： H01L51/5259 , B81C1/00285 , H01L23/26 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2924/0002 , H01L2924/12044 , Y10T428/24 , Y10T428/24612 , H01L2924/00
摘要： Methods for protecting circuit device materials, optoelectronic devices, and caps using a reflowable getter are described. The methods, devices and caps provide advantages because they enable modification of the shape and activity of the getter after sealing of the device. Some embodiments of the invention provide a solid composition comprising a reactive material and a phase changing material. The combination of the reactive material and phase changing material is placed in the cavity of an electronic device. After sealing the device by conventional means (epoxy seal for example), the device is subjected to thermal or electromagnetic energy so that the phase changing material becomes liquid, and consequently: exposes the reactive material to the atmosphere of the cavity, distributes the getter more equally within the cavity, and provides enhanced protection of sensitive parts of the device by flowing onto and covering these parts, with a thin layer of material.

30. 发明申请

US20120112293A1 SEALED CAVITY AND METHOD FOR PRODUCING SUCH A SEALED CAVITY 有权
标题翻译：密封孔和生产这种密封空间的方法
公开(公告)号：US20120112293A1
公开(公告)日：2012-05-10
申请号：US13381241
申请日：2010-07-06
申请人： Jean-Louis Pornin , Fabrice Jacquet
发明人： Jean-Louis Pornin , Fabrice Jacquet
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： B81C1/00285 , B81B2203/0384 , B81C2203/0136 , B81C2203/0145
摘要： A method for producing a sealed cavity, including: a) producing a sacrificial layer on a substrate; b) producing a cover layer covering at least the sacrificial layer and a portion of the face of the substrate not covered by the sacrificial layer, the cover layer including lateral flanks forming, with the substrate, an angle of less than 90°; c) producing a hole through one of the lateral flanks of the cover layer such that a maximum distance between the substrate and an edge of the hole is less than approximately 3 μm, the hole crossing a portion of the cover layer deposited on a portion of the substrate not covered by the sacrificial layer; d) eliminating the sacrificial layer through the hole, forming the cavity; and e) depositing at least one material plugging the hole in a sealed fashion.
摘要翻译：一种密封空腔的制造方法，包括：a）在基板上制造牺牲层; b）产生覆盖层，该覆盖层至少覆盖牺牲层和未被牺牲层覆盖的衬底的一部分表面，覆盖层包括侧面，其与衬底形成小于90°的角度; c）通过覆盖层的侧面之一产生孔，使得基板和孔的边缘之间的最大距离小于约3μm，穿过覆盖层的一部分上的空穴沉积在所述基板未被所述牺牲层覆盖; d）通过孔消除牺牲层，形成空腔; 以及e）以密封方式沉积至少一种堵塞所述孔的材料。

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