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21. 发明申请

US20150229212A1 SWITCHING REGULATOR AND CONTROL METHOD THEREOF 有权
标题翻译：切换调节器及其控制方法
公开(公告)号：US20150229212A1
公开(公告)日：2015-08-13
申请号：US14425517
申请日：2013-09-03
申请人： Yohichi Shiwaya
发明人： Yohichi Shiwaya
IPC分类号： H02M3/158
CPC分类号： H02M3/158 , H02M3/156 , H02M3/1588 , H02M2001/0009 , H02M2001/0032 , Y02B70/1466 , Y02B70/16
摘要： A switching regulator including an output switch element; a rectification switch element; an oscillation circuit; an error amplifier circuit; a slope circuit; a first voltage comparison circuit; a second voltage comparison circuit; a one pulse generation circuit; a control circuit; and a backflow detection circuit, and a control method thereof suppress variations to be stabilized with respect to a target value of the load current for switching between a PWM control and a PFM control, and ensure the switching from the PFM control to the PWM control or from the PWM control to the PFM control even if various parameters including external elements such as chips, coils, and capacitors vary.
摘要翻译：一种开关调节器，包括输出开关元件; 整流开关元件; 振荡电路; 误差放大器电路; 斜坡电路; 第一电压比较电路; 第二电压比较电路; 一脉冲发生电路; 一个控制电路; 逆流检测电路及其控制方法抑制PWM控制与PFM控制之间切换的负载电流的目标值的稳定化，并且确保从PFM控制切换到PWM控制，即使包括诸如芯片，线圈和电容器等外部元件的各种参数变化，也可以从PWM控制到PFM控制。

22. 发明授权

US09087714B2 Semiconductor integrated circuit and semiconductor integrated circuit apparatus 有权
标题翻译：半导体集成电路和半导体集成电路设备
公开(公告)号：US09087714B2
公开(公告)日：2015-07-21
申请号：US13223356
申请日：2011-09-01
申请人： Yuuichi Ueda
发明人： Yuuichi Ueda
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L27/088 , H01L21/823418 , H01L21/823425
摘要： A semiconductor integrated circuit includes a substrate of a first conductivity type, and a first MOS transistor and a second MOS transistor both formed in the substrate. The first MOS transistor includes first drain and first source regions as first active regions of a second conductivity type; a second active region of the first conductivity type; a first gate electrode disposed between the first drain and source regions; and a first substrate electrode connected to the second active region. The second MOS transistor includes a second drain region and a second source region which are formed between the first source region and the second active region, such that the first source region is proximate to the second drain region. The first substrate electrode is electrically separated from the first drain and source electrodes, and the second MOS transistor is connected between the first substrate electrode and the first source electrode.
摘要翻译：半导体集成电路包括第一导电类型的衬底，以及形成在衬底中的第一MOS晶体管和第二MOS晶体管。第一MOS晶体管包括第一漏极和第一源极区域作为第二导电类型的第一有源区域; 第一导电类型的第二有源区; 设置在所述第一漏极和源极区域之间的第一栅电极; 以及连接到第二有源区的第一衬底电极。第二MOS晶体管包括形成在第一源极区域和第二有源区域之间的第二漏极区域和第二源极区域，使得第一源极区域接近第二漏极区域。第一基板电极与第一漏极和源极电气分离，并且第二MOS晶体管连接在第一基板电极和第一源极电极之间。

23. 发明授权

US09146261B2 Electronic device and method of electronic device for determining power source device 有权
标题翻译：用于确定电源装置的电子装置的电子装置和方法
公开(公告)号：US09146261B2
公开(公告)日：2015-09-29
申请号：US14018550
申请日：2013-09-05
申请人： Masayuki Funakoshi
发明人： Masayuki Funakoshi
IPC分类号： G01R19/00 , G01R27/08 , G06F1/26 , G06F1/30 , H02J7/00
CPC分类号： G01R19/00 , G01R19/0084 , G01R19/0092 , G06F1/263 , G06F1/30 , G06F1/305 , H02J7/0006 , H02J7/0063 , H02J2007/0001
摘要： An electronic device includes a current source for applying current, a pull-up resistor or a pull-down resistor configured to be connected to one of a plurality of data terminals, a voltage level detection circuit configured to detect voltage values of the plurality of data terminals, and a connected device determination circuit configured to determine a type of a power source device based on the voltage values of the plurality of data terminals detected by the voltage level detection circuit.
摘要翻译：一种电子设备，包括用于施加电流的电流源，上拉电阻或被配置为连接到多个数据端中的一个的下拉电阻;电压电平检测电路，被配置为检测多个数据的电压值端子，以及连接装置确定电路，被配置为基于由电压电平检测电路检测的多个数据端子的电压值来确定电源装置的类型。

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