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    • 21. 发明申请
    • OPTOELECTRONIC DEVICE COMPRISING PEROVSKITES
    • 包含PEROVSKITES的光电器件
    • US20150129034A1
    • 2015-05-14
    • US14401452
    • 2013-05-20
    • ISIS INNOVATION LIMITED
    • Henry SnaithMichael Lee
    • H01L31/0264H01G9/20H01L51/42
    • H01L31/0264H01G9/2004H01G9/2036H01L51/0032H01L51/4213H01L51/422H01L51/4226H01L2031/0344H01L2251/306Y02E10/549Y02P70/521
    • The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.
    • 本发明提供一种包括多孔材料的光电子器件,该多孔材料包括包含钙钛矿的半导体。 多孔材料可以包括多孔钙钛矿。 因此,多孔材料可以是本身是多孔的钙钛矿材料。 另外或替代地,多孔材料可以包括多孔介电支架材料,例如氧化铝,以及设置在其表面上的涂层,该涂层包括包含钙钛矿的半导体。 因此,在一些实施方案中,孔隙率来自电介质支架而不是钙钛矿本身。 多孔材料通常由诸如空穴导体,液体电解质或电子导体的电荷输送材料渗透。 本发明还提供了多孔材料在光电器件中作为半导体的用途。 进一步提供的是使用多孔材料作为光电子器件中的光敏半导体材料。 本发明另外提供了包含多孔材料的层作为光电器件中的光活性层的用途。 还提供了一种用于光电子器件的光敏层,该光敏层包括多孔材料。