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21. 发明申请

US20110008145A1 METHOD OF, AND APPARATUS FOR, SEPARATING WAFERS FROM A WAFER STACK 审中-公开
标题翻译：用于从WAFER STACK隔离WAF的方法和装置
公开(公告)号：US20110008145A1
公开(公告)日：2011-01-13
申请号：US12814200
申请日：2010-06-11
申请人： Reinhard Huber
发明人： Reinhard Huber
IPC分类号： H01L21/67 , B65G59/02
CPC分类号： B28D5/0094 , B65G59/045 , H01L21/67706 , H01L21/67748 , H01L21/6776 , H01L21/67778 , H01L21/6838
摘要： In a method of separating wafers (12) from a vertical wafer stack (16), the wafers (12) are transported away individually from above via movement means (23). The movement means (23) include circulating belts (24), with a suction surface (25) against which the uppermost wafer (12) abuts, the abutment of the wafer against the suction surface (25) being enhanced by negative pressure. To separate a plurality of wafers (12) located one upon another, the movement means (23) are subjected to at least one of the following two steps: a) water (30) is forcefully jetted against the leading edge of the uppermost wafer (12), the water being directed obliquely from beneath the latter, or b) the movement means (23) guide the wafer (12) over a stripping device (32) which butts against the underside of the moving wafer and both forces the wafer against the suction surface (25) and generates a braking action thereon. Thereafter, the wafer (12) is moved to a transporting path (35, 37) to be transported for further processing.
摘要翻译：在将晶片（12）与垂直晶片堆叠（16）分离的方法中，通过移动装置（23）将晶片（12）从上方单独地输送出去。移动装置（23）包括循环带（24），其中最上面的晶片（12）邻接的吸力表面（25），晶片抵靠吸力表面（25）的邻接被负压增强。为了分离一个位于另一个上的多个晶片（12），运动装置（23）经受以下两个步骤中的至少一个：a）水（30）被强制地喷射到最上面的晶片的前缘（ 12），水从后面倾斜地引导，或者b）移动装置（23）将晶片（12）引导到剥离装置（32）上，剥离装置（32）抵靠移动的晶片的下侧，并且两者迫使晶片反对吸力表面（25）并在其上产生制动作用。此后，将晶片（12）移动到输送路径（35,37），以进行运输以进一步处理。

22. 发明申请

US20080295863A1 METHOD AND DEVICE FOR PROCESSING OR TREATING SILICON MATERIAL 审中-公开
标题翻译：用于加工或处理硅材料的方法和装置
公开(公告)号：US20080295863A1
公开(公告)日：2008-12-04
申请号：US12177741
申请日：2008-07-22
申请人： Heinz KAPPLER
发明人： Heinz KAPPLER
IPC分类号： B08B3/08 , B08B1/02
CPC分类号： C01B33/00 , C01B33/02 , C01B33/021
摘要： A method for processing or treating silicon material in carrying out a cleaning or purification process comprises the following steps: wetting bulk silicon material, facing a first direction with a first liquid process medium, automatic changing of an orientation of the bulk silicon material by turning bulk silicon material with a turning device and wetting the bulk silicon material in the altered orientation with the first liquid medium. After that, the bulk silicon material is cleaned in a corresponding cleaning device.
摘要翻译：用于处理或处理硅材料以进行清洁或净化过程的方法包括以下步骤：用第一液体处理介质润湿体硅材料，面向第一方向，通过转动体积自动改变体硅材料的取向硅材料，其具有转动装置，并且以第一液体介质润湿改变的取向的体硅材料。之后，在相应的清洁装置中清洗体硅材料。

23. 发明授权

US08399343B2 Method for the selective doping of silicon and silicon substrate treated therewith 有权
标题翻译：用于处理硅和硅衬底的选择性掺杂的方法
公开(公告)号：US08399343B2
公开(公告)日：2013-03-19
申请号：US12903804
申请日：2010-10-13
申请人： Dirk Habermann
发明人： Dirk Habermann
IPC分类号： H01L21/316
CPC分类号： H01L31/1804 , H01L21/2255 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.
摘要翻译：用于在硅中制造pn结的硅衬底（1）的硅的选择性掺杂的方法的特征在于以下步骤：a）用硅掺杂剂（2）提供硅衬底（1）的表面，基于磷，b）加热用于在硅表面上产生磷硅酸盐玻璃（2）的硅衬底（1），其中磷作为第一掺杂（3）扩散到硅中，c）施加掩模（4））覆盖磷酸硅玻璃（2），覆盖稍后被高度掺杂的区域（5），d）去除非掩蔽区域中的磷硅酸盐玻璃（2），e）从磷中去除掩模（4）硅酸盐玻璃（2），f）再次加热用于将磷从磷硅酸盐玻璃（2）进一步扩散到硅中作为用于产生高掺杂区（5）的第二掺杂，g）; 从硅中完全除去磷酸硅玻璃（2）。

24. 发明授权

US08256605B2 Holding means, device and method for transporting substrates, in particular printed circuit boards 有权
标题翻译：用于输送基板的保持装置，装置和方法，特别是印刷电路板
公开(公告)号：US08256605B2
公开(公告)日：2012-09-04
申请号：US12696654
申请日：2010-01-29
申请人： Laurent Nicolet
发明人： Laurent Nicolet
IPC分类号： B65G17/38
CPC分类号： H01L21/67706 , B65G49/064 , B65G2249/04 , H01L21/67057 , H01L21/67086 , H01L21/67721 , H05K13/0061
摘要： In order to transport printed circuit boards (30) through a processing system (12), printed circuit boards (30) lying one behind another can be connected by means of holding clips (22) to form a type of chain. The outer ends of the holding clips (22) are suspended on two spaced-apart transport chains (16) which provide for transport and mounting. The holding clips are formed in two parts with a lower holding part (22) and an upper holding part (40), between which a printed circuit board (30) is mounted.
摘要翻译：为了通过处理系统（12）传送印刷电路板（30），可以通过夹持夹（22）连接一个位于其后的印刷电路板（30），以形成一种链条。保持夹（22）的外端悬挂在提供运输和安装的两个间隔开的输送链（16）上。保持夹在下部保持部分（22）和上部保持部分（40）的两部分中形成，其间安装有印刷电路板（30）。

25. 发明申请

US20110162709A1 METHOD FOR THE TREATMENT OF SUBSTRATES, SUBSTRATE AND TREATMENT DEVICE FOR CARRYING OUT SAID METHOD 审中-公开
标题翻译：用于处理基板的方法，用于实施方法的基板和处理装置
公开(公告)号：US20110162709A1
公开(公告)日：2011-07-07
申请号：US13047268
申请日：2011-03-14
申请人： DIRK HABERMANN
发明人： DIRK HABERMANN
IPC分类号： H01L31/0216 , H01L31/02
CPC分类号： H01L21/67028 , H01L21/67005 , H01L21/67034 , H01L21/67051 , H01L21/67173 , H01L21/67207 , H01L31/1804 , Y02P70/521
摘要： In a method for the treatment of substrates (13) for solar cells composed of silicon, after multiple etching the substrates are cleaned (18) with DI water. Afterwards, the substrates (13) are dried and heated in drying stations (22, 25). The heated substrates (13) are subsequently oxidized in an oxidation station (30) by means of oxidation gas (34) with a proportion of ozone.
摘要翻译：在用于处理由硅构成的太阳能电池的基板（13）的方法中，在多次蚀刻之后，用DI水清洗（18）基板。之后，将基板（13）干燥并在干燥站（22,25）中加热。受热衬底（13）随后通过氧化气体（34）以一定比例的臭氧氧化在氧化站（30）中。

26. 发明申请

US20110124149A1 METHOD AND DEVICE FOR COATING A CARRIER FOR THIN-FILM SOLAR CELLS 审中-公开
标题翻译：用于涂覆薄膜太阳能电池的载体的方法和装置
公开(公告)号：US20110124149A1
公开(公告)日：2011-05-26
申请号：US12738944
申请日：2010-04-20
申请人： Martin Schoch
发明人： Martin Schoch
IPC分类号： H01L31/0256 , B05C3/02
CPC分类号： H01L21/02628 , H01L21/02557 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： A system (11) is designed to coat a film-like, long carrier (18) for thin-film solar cells on the absorber layer thereof with cadmium sulfide. To this end, the carrier (18) is continuously guided through a solution (23) made of cadmium acetate, ammonia and thiourea or is immersed into a bath (22) with said solution (23). By using a wide, very long and flat tub (24) containing the solution (23), the required amount for the coating is minimized, such that the consumption of solution (23) is low.
摘要翻译：系统（11）设计成用硫化镉在其吸收层上涂覆薄膜太阳能电池的膜状长载体（18）。为此，载体（18）被连续地引导通过由乙酸镉，氨和硫脲制成的溶液（23），或者用所述溶液（23）浸入浴（22）中。通过使用容纳溶液（23）的宽，非常长且扁平的浴缸（24），涂层的所需量最小化，使得溶液（23）的消耗量低。

27. 发明申请

US20100311247A1 Method and Device for Treating Silicon Wafers 有权
标题翻译：用于处理硅晶片的方法和装置
公开(公告)号：US20100311247A1
公开(公告)日：2010-12-09
申请号：US12818853
申请日：2010-06-18
申请人： Heinz Kappler
发明人： Heinz Kappler
IPC分类号： H01L21/306 , C23F1/08
CPC分类号： H01L21/6708 , B05C1/025 , B05C1/0813 , H01L21/67086 , H01L21/6715
摘要： A method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.
摘要翻译：一种用于处理硅晶片的方法和装置。在第一步骤中，硅晶片（22）沿着连续的水平输送带（12,32）被平坦地输送，并且喷嘴（20）等从顶部将蚀刻溶液（21）喷射到晶片上以将它们纹理，从下方仅向硅晶片（22）施加少量蚀刻溶液（21）。在第二步骤中，如在第一步骤中排列的硅晶片（22）仅用蚀刻溶液（35）从下方被润湿以对其进行蚀刻抛光。

28. 发明申请

US20080116059A1 DEVICE FOR THE TREATMENT, PARTICULARLY GALVANIZATION, OF SUBSTRATES 有权
标题翻译：用于处理，特别是基质化的装置
公开(公告)号：US20080116059A1
公开(公告)日：2008-05-22
申请号：US12022452
申请日：2008-01-30
申请人： Heinz Kappler
发明人： Heinz Kappler
IPC分类号： C25D17/00 , C25B9/00
CPC分类号： C25D7/0621 , C25D17/005 , C25D17/06 , H01L31/022425 , H05K3/0085 , Y02E10/50
摘要： A contacting device for a galvanization apparatus comprises contacting rollers with a continuous rigid external face, which is joined to a jacket section. The jacket section is provided with an inner opening that is wider than a rotating shaft on which the contacting roller sits. This allows the contacting roller to be moved in a radial direction, wherein electric contacting and securing of a basic position is obtained via springs in every one of the radially moved positions. The moveability of the contacting roller ensures good contact as the contacting roller rests against substrates also when the substrates are uneven. The contact pressure can be relatively small.
摘要翻译：用于镀锌装置的接触装置包括使辊与连续的刚性外表面接触，所述连续的刚性外表面连接到护套部分。护套部分设置有比接触辊所在的旋转轴更宽的内部开口。这允许接触辊在径向方向上移动，其中通过每个径向移动位置中的弹簧获得基本位置的电接触和固定。当接触辊不均匀时，接触辊的移动性确保接触辊抵靠基板的良好接触。接触压力可以相对较小。

29. 发明授权

US5326442A Apparatus for the galvanic treatment of articles 失效
标题翻译：用于电镀处理物品的设备
公开(公告)号：US5326442A
公开(公告)日：1994-07-05
申请号：US26488
申请日：1993-03-04
申请人： Dieter C. Schmid
发明人： Dieter C. Schmid
IPC分类号： C25D17/00 , H05K3/24 , C25D17/28
CPC分类号： H05K3/241 , C25D17/00 , C25D17/005
摘要： An electroplating apparatus (11) has a conveying system (19), which passes the printed circuit boards on a horizontal passage path through the treatment chamber (13). They are contacted by tong-like grippers (32), which run upstream of the leading edge (63) of the circuit board and in this area engage thereon from above and below. The gripers (32) are fixed to transverse beams (29), which are guided on both sides by chains (26) and electrically contacted by contact rails (39). Thus, the circuit boards (12) are moved in a horizontal, central path and simultaneously contacted. Alternatively the circuit boards (12) can be conveyed between electrically connected contact roll pairs (21), which are conveyed by an upper and lower conveyor (20a, b) and automatically rotate in order to convey the circuit boards at high speed.
摘要翻译：电镀设备（11）具有输送系统（19），该输送系统使经过处理室（13）的水平通道的印刷电路板通过。它们通过钳形夹持器（32）接触，该夹持器在电路板的前缘（63）的上游延伸，并且在该区域中从上方和下方接合。夹持器（32）固定到横梁（29）上，横梁（29）在两侧由链条（26）引导并与接触导轨（39）电接触。因此，电路板（12）在水平的中心路径中移动并同时接触。或者，可以在电连接的接触辊对（21）之间传送电路板（12），所述电连接的接触辊对（21）由上部和下部传送器（20a，b）输送并自动旋转以便高速地传送电路板。

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