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21. 发明授权

US10157445B2 Image generating apparatus, image generating method, and program 有权
公开(公告)号：US10157445B2
公开(公告)日：2018-12-18
申请号：US15037757
申请日：2014-12-11
申请人： Daisuke Nakagawa , Norihiko Kawai , Tomokazu Sato , Naokazu Yokoya
发明人： Daisuke Nakagawa , Norihiko Kawai , Tomokazu Sato , Naokazu Yokoya
IPC分类号： G06K9/00 , G06T3/00
摘要： An image generating apparatus for generating an output image based on an input panorama image, includes a parameter input unit inputting an output range parameter and a correction parameter, the output range parameter designating an output range in the panorama image, the correction parameter designating a correction part to be corrected in the output image; and an image correction unit correcting the correction part designated by the correction parameter in the output image. Further, the image correction unit calculates a similarity between the correction part and peripheral pixels and corrects the correction part based on the similarity and the peripheral pixels, and the output image is generated from the output range of the panorama image and is the panorama image corrected by the correction.

22. 发明授权

US08408934B2 Connector 有权
标题翻译：连接器
公开(公告)号：US08408934B2
公开(公告)日：2013-04-02
申请号：US13021836
申请日：2011-02-07
申请人： Kouji Sakakura , Daisuke Nakagawa
发明人： Kouji Sakakura , Daisuke Nakagawa
IPC分类号： H01R4/38
CPC分类号： H01R13/6581 , H01R13/516 , H01R13/582 , H01R13/73
摘要： A connector is provided for improving connection reliability between terminal fittings by preventing wires from shaking to prevent sliding movements of the terminal fittings. The connector includes a metallic shield shell (10) to be mounted at ends of a plurality of wires (50). The shield shell (10) includes a mounting portion (11) for fixing the connector to a case of a device, and the mounting portion (11) includes a wire fixing portion (20) for holding and fixing the plurality of wires (50) on a surface thereof at a draw-out side of the wires (50).
摘要翻译：提供了一种连接器，用于通过防止电线振动以防止端子配件的滑动运动来改善端子配件之间的连接可靠性。该连接器包括一个金属屏蔽外壳（10），用于安装在多条电线（50）的端部。屏蔽壳（10）包括用于将连接器固定到装置的壳体上的安装部分（11），并且安装部分（11）包括用于保持和固定多个电线（50）的电线固定部分（20）在电线（50）的拉出侧的表面上。

23. 发明授权

US08144743B2 Nitride based semiconductor device and fabrication method for the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08144743B2
公开(公告)日：2012-03-27
申请号：US12379945
申请日：2009-03-04
申请人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
发明人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L29/2003 , H01S5/0021 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S2301/173 , H01S2301/185
摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
摘要翻译：氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

24. 发明申请

US20110117784A1 DEVICE CONNECTOR 有权
标题翻译：设备连接器
公开(公告)号：US20110117784A1
公开(公告)日：2011-05-19
申请号：US12942681
申请日：2010-11-09
申请人： Hiroyuki Matsuoka , Daisuke Nakagawa
发明人： Hiroyuki Matsuoka , Daisuke Nakagawa
IPC分类号： H01R24/00
CPC分类号： H01R13/748 , H01R13/504
摘要： A device connector is provided with a metal reinforcing plate (30) including an opening (31) for permitting the passage of terminal fittings, a housing main body (10), a flange (11) formed by insert molding using the reinforcing plate (30) and synthetic resin, a device-side housing portion (12) to be accommodated into a connector mounting hole, and terminal fittings (15) held in the housing main body (10) while being passed through the opening (31). The reinforcing plate (30) is beveled along a peripheral edge thereof to form an R-surface (36). Thus, the device connector is produced at a low cost and eliminates possible starting points of cracks created in the synthetic resin covering the peripheral edge of the metal reinforcing plate (30).
摘要翻译：一种设备连接器设置有金属加强板（30），其包括用于允许端子接头通过的开口（31），壳体主体（10），通过使用加强板（30）插入成型形成的凸缘（11））和合成树脂，容纳在连接器安装孔中的装置侧容纳部分（12）和在通过开口（31）的同时保持在壳体主体（10）中的端子接头（15）。加强板（30）沿着其周边边缘倾斜以形成R表面（36）。因此，以低成本制造器件连接器，并且消除了覆盖金属加强板（30）的周边边缘的合成树脂产生的裂缝的可能起点。

25. 发明授权

US07792171B2 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US07792171B2
公开(公告)日：2010-09-07
申请号：US12269363
申请日：2008-11-12
申请人： Shinichi Kohda , Daisuke Nakagawa
发明人： Shinichi Kohda , Daisuke Nakagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/22 , H01S5/305 , H01S5/3063 , H01S5/3216 , H01S2304/04
摘要： A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al. The p-type cladding layer is made of a group III nitride semiconductor containing Al, and the p-type electron blocking layer is made of a group III nitride semiconductor having a larger Al composition than the p-type cladding layer.
摘要翻译：氮化物半导体激光器件具有III族氮化物半导体多层结构。 III族氮化物半导体多层结构包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层，p型半导体层为通过将p侧引导层，与p侧引导层接触的p型电子阻挡层和与p型电子阻挡层接触的p型覆盖层从靠近发光层。 p侧引导层通过层叠由含有Al的III族氮化物半导体层和不含Al的III族氮化物半导体层构成的层而形成。 p型覆层由含有Al的III族氮化物半导体构成，p型电子阻挡层由比p型覆层更大的Al组成的III族氮化物半导体构成。

26. 发明授权

US10186013B2 Image generating apparatus, image generating method, and program 有权
公开(公告)号：US10186013B2
公开(公告)日：2019-01-22
申请号：US15037757
申请日：2014-12-11
申请人： Daisuke Nakagawa , Norihiko Kawai , Tomokazu Sato , Naokazu Yokoya
发明人： Daisuke Nakagawa , Norihiko Kawai , Tomokazu Sato , Naokazu Yokoya
IPC分类号： G06K9/00 , G06T3/00
摘要： An image generating apparatus for generating an output image based on an input panorama image, includes a parameter input unit inputting an output range parameter and a correction parameter, the output range parameter designating an output range in the panorama image, the correction parameter designating a correction part to be corrected in the output image; and an image correction unit correcting the correction part designated by the correction parameter in the output image. Further, the image correction unit calculates a similarity between the correction part and peripheral pixels and corrects the correction part based on the similarity and the peripheral pixels, and the output image is generated from the output range of the panorama image and is the panorama image corrected by the correction.

27. 发明授权

US08422527B2 Nitride based semiconductor device and fabrication method for the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08422527B2
公开(公告)日：2013-04-16
申请号：US13371490
申请日：2012-02-13
申请人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
发明人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L29/2003 , H01S5/0021 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S2301/173 , H01S2301/185
摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
摘要翻译：氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

28. 发明申请

US20110104924A1 DEVICE CONNECTOR 有权
标题翻译：设备连接器
公开(公告)号：US20110104924A1
公开(公告)日：2011-05-05
申请号：US12917714
申请日：2010-11-02
申请人： Hiroyuki Matsuoka , Daisuke Nakagawa
发明人： Hiroyuki Matsuoka , Daisuke Nakagawa
IPC分类号： H01R13/52 , H01R13/40
CPC分类号： H01R13/5202 , H01R4/34 , H01R13/504 , H01R13/707 , H01R13/748 , H01R2105/00
摘要： A device connector has a housing main body (10), a device-side housing portion (12) to be accommodated in a connector mounting hole, a reinforcing plate (30) including an opening (31) for permitting the passage of terminal fittings, and a flange (11) formed by insert molding using the reinforcing plate (30) and synthetic resin, and terminal fittings 15. An outer peripheral end surface of the reinforcing plate (30) is exposed. The device connector is produced with a reduced cost by insert molding using a metal reinforcing plate as an insert while preventing a crack from being created in a synthetic resin portion covering the reinforcing plate (30).
摘要翻译：装置连接器具有壳体主体（10），容纳在连接器安装孔中的装置侧容纳部分（12），包括用于允许端子配件通过的开口（31）的加强板（30）以及通过使用加强板（30）和合成树脂的嵌件成型以及端子接头15形成的凸缘（11）。加强板（30）的外周端面露出。通过使用金属加强板作为插入件通过嵌入成型降低成本，同时防止在覆盖加强板（30）的合成树脂部分中产生裂纹。

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