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    • 24. 发明授权
    • High-voltage inverter, dielectric-barrier discharge evice and cation apparatus
    • 高压逆变器,介质阻挡放电设备和阳离子设备
    • US09287762B2
    • 2016-03-15
    • US14208418
    • 2014-03-13
    • Hisahiro KamataEiki HiramaMasahiro Noguchi
    • Hisahiro KamataEiki HiramaMasahiro Noguchi
    • H05B41/16H05B41/24H02M1/08H02M7/537H05H1/24B41J11/00
    • H02M1/08B41J11/0015H02M7/537H05H1/2406H05H2001/2412Y02B70/1441
    • An inverter switches input voltage Vin to flow an excitation current to excitation winding Np of a transformer and output to a discharger an alternating voltage Vout from the output winding Ns. In an output circuit flowing a current to the discharger, a voltage-responsive connector is connected in series with the winding Ns to interrupt or connect the output circuit according to a voltage applied to between opposed electrodes. The voltage-responsive connector has characteristics of keeping the electrodes in an insulated state until an instantaneous value of the alternating voltage reaches a predetermined value, and holding the electrodes in a conduction state while the instantaneous value of the alternating voltage has reached the predetermined value and continues to exceed the predetermined value, and quickly returning the electrodes to the insulated state when the instantaneous value of the alternating voltage has fallen below the predetermined value.
    • 逆变器切换输入电压Vin以使激励电流流过变压器的励磁绕组Np,并从输出绕组Ns向放电器输出交流电压Vout。 在将电流流向放电器的输出电路中,电压响应连接器与绕组Ns串联连接,以根据施加到相对电极之间的电压中断或连接输出电路。 电压响应连接器具有将电极保持在绝缘状态直到交流电压的瞬时值达到预定值并且在交流电压的瞬时值已经达到预定值的同时将电极保持在导通状态的特性,以及 继续超过预定值,并且当交流电压的瞬时值已经低于预定值时,迅速使电极返回到绝缘状态。
    • 30. 发明授权
    • Substrate for high-intensity led, and method of epitaxially growing same
    • 高强度基板,外延生长方法相同
    • US4921817A
    • 1990-05-01
    • US353652
    • 1989-03-08
    • Masahiro Noguchi
    • Masahiro Noguchi
    • H01L21/205H01L21/20H01L21/208H01L33/30H01L33/40
    • H01L33/40H01L33/0062H01L33/30Y10S148/099Y10S148/108Y10S148/135
    • A substrate for a high-intensity LED and the method of epitaxially growing the substrate according to the invention are based on the fact that, in using an AuZn alloy or the like as the ohmic electrode of the p-type Al.sub.x Ga.sub.1-x As layer (2), the higher the carrier concentration of this layer, the smaller the contact resistance and the lower the applied voltage (V.sub.F) necessary for passing a forward current of 10 mA. Joint use is made of gas-phase epitaxy and liquid-phase epitaxy. A layer having a carrier concentration three to five times that of an epitaxial layer formed by liquid-phase epitaxy (LPE) can be realized with excellent reproducibility by gas-phase epitaxy (MOCVD process, MBE process, etc.). By utilizing this p-type Al.sub.x Ga.sub.1-x As layer (2) as an electrode contact layer, contact resistance can be reduced and variance diminished.
    • PCT No.PCT / JP88 / 00677 Sec。 371日期:1989年3月8日 102(e)日期1989年3月8日PCT Filed 1988年7月6日PCT Pub。 出版物WO89 / 00769 日本1989年1月26日。根据本发明的高强度LED用基板和外延生长基板的方法是基于以下事实:在使用AuZn合金等作为对位基板的欧姆电极的情况下, 类型的Al x Ga 1-x As层(2),该层的载流子浓度越高,接触电阻越小,通过10mA的正向电流所需的施加电压(VF)越低。 联合使用气相外延和液相外延。 可以通过气相外延(MOCVD工艺,MBE工艺等)以优异的再现性实现具有通过液相外延(LPE)形成的外延层的载流子浓度的三至五倍的层。 通过利用该p型Al x Ga 1-x As层(2)作为电极接触层,可以降低接触电阻,减少方差。