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21. 发明授权

US07479674B2 Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US07479674B2
公开(公告)日：2009-01-20
申请号：US12034822
申请日：2008-02-21
申请人： Yukio Nakabayashi , Kazumi Nishinohara , Atsuhiro Kinoshita , Junji Koga
发明人： Yukio Nakabayashi , Kazumi Nishinohara , Atsuhiro Kinoshita , Junji Koga
IPC分类号： H01L29/76
CPC分类号： H01L29/785 , H01L29/66643 , H01L29/66795 , H01L29/7839 , H01L29/78621
摘要： An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.
摘要翻译：场效应晶体管包括第一半导体区域，绝缘地设置在第一半导体区域上的栅极电极，夹在第一半导体区域之间的源极和漏极电极以及形成在第一半导体区域和源极之一之间的第二半导体区域和漏电极，其杂质浓度高于第一半导体区域，源电极在源电极和漏电极相对于沟道方向彼此分离的方向上偏移到栅电极，并且所述第二半导体区域中的一个具有不大于所述第二半导体区域中的所述第二半导体区域在所述沟道方向上完全耗尽的厚度的厚度与所述源极电极处于热平衡。

22. 发明申请

US20050212055A1 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US20050212055A1
公开(公告)日：2005-09-29
申请号：US11081348
申请日：2005-03-16
申请人： Yukio Nakabayashi , Kazumi Nishinohara , Atsuhiro Kinoshita , Junji Koga
发明人： Yukio Nakabayashi , Kazumi Nishinohara , Atsuhiro Kinoshita , Junji Koga
IPC分类号： H01L29/417 , H01L21/00 , H01L21/336 , H01L29/76 , H01L29/772 , H01L29/78 , H01L29/786
CPC分类号： H01L29/785 , H01L29/66643 , H01L29/66795 , H01L29/7839 , H01L29/78621
摘要： An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.
摘要翻译：场效应晶体管包括第一半导体区域，绝缘地设置在第一半导体区域上的栅极电极，夹在第一半导体区域之间的源极和漏极电极以及形成在第一半导体区域和源极之一之间的第二半导体区域和漏电极，其杂质浓度高于第一半导体区域，源电极在源电极和漏电极相对于沟道方向彼此分离的方向上偏移到栅电极，并且所述第二半导体区域中的一个具有不大于所述第二半导体区域中的所述第二半导体区域在所述沟道方向上完全耗尽的厚度的厚度与所述源极电极处于热平衡。

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