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21. 发明授权

US08665640B2 Spin torque transfer cell structure utilizing field-induced antiferromagnetic or ferromagnetic coupling 有权
标题翻译：使用场诱导反铁磁或铁磁耦合的自旋转矩传递单元结构
公开(公告)号：US08665640B2
公开(公告)日：2014-03-04
申请号：US13544670
申请日：2012-07-09
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/00
CPC分类号： H01F10/329 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3268
摘要： A magnetic memory cell including a soft magnetic layer and a coupling layer, and methods of operating the memory cell are provided. The memory cell includes a stack with a free ferromagnetic layer and a pinned ferromagnetic layer, and a soft magnetic layer and a coupling layer may also be formed as layers in the stack. The coupling layer may cause antiferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction antiparallel to the magnetization of the soft magnetic layer, or the coupling layer may cause ferromagnetic coupling to induce the free ferromagnetic layer to be magnetized in a direction parallel to the magnetization of the soft magnetic layer. The coupling layer, through a coupling effect, reduces the critical switching current of the memory cell.
摘要翻译：提供了包括软磁性层和耦合层的磁存储单元，以及操作存储单元的方法。存储单元包括具有自由铁磁层和钉扎铁磁层的堆叠，并且软磁层和耦合层也可以形成为堆叠中的层。耦合层可以引起反铁磁耦合以使自由铁磁层在与软磁层的磁化方向反平行的方向上被磁化，或者耦合层可以引起铁磁性耦合，以使得自由铁磁层在平行方向上被磁化到软磁层的磁化。耦合层通过耦合效应降低了存储单元的关键开关电流。

22. 发明申请

US20140015143A1 METHODS OF FORMING NANO-SCALE PORES, NANO-SCALE ELECTRICAL CONTACTS, AND MEMORY DEVICES INCLUDING NANO-SCALE ELECTRICAL CONTACTS, AND RELATED STRUCTURES AND DEVICES 有权
标题翻译：形成纳米尺度孔，纳米尺度电气接触的方法和包括纳米级电气接触的存储器件以及相关结构和器件
公开(公告)号：US20140015143A1
公开(公告)日：2014-01-16
申请号：US13547228
申请日：2012-07-12
申请人： Jun Liu , Kunal R. Parekh
发明人： Jun Liu , Kunal R. Parekh
IPC分类号： H01L21/768 , H01L23/48 , H01L21/3105
CPC分类号： H01L45/16 , H01L21/0337 , H01L21/76807 , H01L21/76816 , H01L27/2472 , H01L43/02 , H01L43/08 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/1273 , H01L45/14 , H01L45/146 , H01L45/147 , H01L2924/0002 , H01L2924/00
摘要： Electrical contacts may be formed by forming dielectric liners along sidewalls of a dielectric structure, forming sacrificial liners over and transverse to the dielectric liners along sidewalls of a sacrificial structure, selectively removing portions of the dielectric liners at intersections of the dielectric liners and sacrificial liners to form pores, and at least partially filling the pores with a conductive material. Nano-scale pores may be formed by similar methods. Bottom electrodes may be formed and electrical contacts may be structurally and electrically coupled to the bottom electrodes to form memory devices. Nano-scale electrical contacts may have a rectangular cross-section of a first width and a second width, each width less than about 20 nm. Memory devices may include bottom electrodes, electrical contacts having a cross-sectional area less than about 150 nm2 over and electrically coupled to the bottom electrodes, and a cell material over the electrical contacts.
摘要翻译：电触点可以通过沿电介质结构的侧壁形成电介质衬垫而形成电介质衬垫，沿着牺牲结构的侧壁在电介质衬垫之上形成牺牲衬垫，并且在电介质衬垫的横向方向上形成牺牲衬垫，在电介质衬垫和牺牲衬套的交点处选择性地去除介质衬垫的部分，形成孔，并且用导电材料至少部分地填充孔。可以通过类似的方法形成纳米尺度的孔。可以形成底部电极，并且电触点可以在结构上和电耦合到底部电极以形成存储器件。纳米级电触点可以具有第一宽度和第二宽度的矩形横截面，每个宽度小于约20nm。存储器件可以包括底部电极，具有小于约150nm 2的横截面积并且电耦合到底部电极的电触点，以及电触点上的电池材料。

23. 发明授权

US08609270B2 Iron-sulfide redox flow batteries 有权
标题翻译：硫化铁氧化还原液电池
公开(公告)号：US08609270B2
公开(公告)日：2013-12-17
申请号：US13071688
申请日：2011-03-25
申请人： Guan-Guang Xia , Zhenguo Yang , Liyu Li , Soowhan Kim , Jun Liu , Gordon L. Graff
发明人： Guan-Guang Xia , Zhenguo Yang , Liyu Li , Soowhan Kim , Jun Liu , Gordon L. Graff
IPC分类号： H01M4/36 , H01M4/48 , H01M4/20
CPC分类号： H01M8/188 , H01M2/1653 , H01M4/9083 , H01M4/926 , H01M4/96 , H01M8/18 , H01M8/20 , Y02E60/528
摘要： Iron-sulfide redox flow battery (RFB) systems can be advantageous for energy storage, particularly when the electrolytes have pH values greater than 6. Such systems can exhibit excellent energy conversion efficiency and stability and can utilize low-cost materials that are relatively safer and more environmentally friendly. One example of an iron-sulfide RFB is characterized by a positive electrolyte that comprises Fe(III) and/or Fe(II) in a positive electrolyte supporting solution, a negative electrolyte that comprises S2− and/or S in a negative electrolyte supporting solution, and a membrane, or a separator, that separates the positive electrolyte and electrode from the negative electrolyte and electrode.
摘要翻译：硫化铁氧化还原液流电池（RFB）系统对于储能可能是有利的，特别是当电解质的pH值大于6时，这种系统可表现出优异的能量转换效率和稳定性，并且可以利用相对更安全的低成本材料，更环保。硫化铁RFB的一个实例的特征在于在正电解质支持溶液中包含Fe（III）和/或Fe（II）的正电解质，负电解质，其包含负电解质支持中的S2-和/或S 溶液以及将正电解质和电极与负电解质和电极分离的膜或隔膜。

24. 发明申请

US20130292626A1 RESISTIVE MEMORY HAVING CONFINED FILAMENT FORMATION 有权
公开(公告)号：US20130292626A1
公开(公告)日：2013-11-07
申请号：US13465166
申请日：2012-05-07
申请人： Eugene P. Marsh , Jun Liu
发明人： Eugene P. Marsh , Jun Liu
IPC分类号： H01L45/00 , H01L21/8239
CPC分类号： H01L45/085 , H01L45/08 , H01L45/1233 , H01L45/124 , H01L45/1246 , H01L45/1253 , H01L45/1266 , H01L45/14 , H01L45/143 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1683
摘要： Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

25. 发明申请

US20130289912A1 EIGEN-VECTOR APPROACH FOR COIL SENSITIVITY MAPS ESTIMATION 审中-公开
标题翻译：用于线圈灵敏度估计的EIGEN-VECTOR方法
公开(公告)号：US20130289912A1
公开(公告)日：2013-10-31
申请号：US13779999
申请日：2013-02-28
申请人： Jun Liu , Hui Xue , Marcel Dominik Nickel , Ti-chiun Chang , Mariappan S. Nadar , Alban Lefebvre , Edgar Mueller , Qiu Wang , Zhili Yang , Nirmal Janardhanan , Michael Zenge
发明人： Jun Liu , Hui Xue , Marcel Dominik Nickel , Ti-chiun Chang , Mariappan S. Nadar , Alban Lefebvre , Edgar Mueller , Qiu Wang , Zhili Yang , Nirmal Janardhanan , Michael Zenge
IPC分类号： G01R33/24
CPC分类号： G01R33/243 , G01R33/246 , G01R33/5611
摘要： A method for estimating a coil sensitivity map for a magnetic resonance (MR) image includes providing (61) a matrix A of sliding blocks of a 2D image of coil calibration data, calculating (62) a left singular matrix V∥ from a singular value decomposition of A corresponding to τ leading singular values, calculating (63) P=V∥V∥H, calculating (64) a matrix S that is an inverse Fourier transform of a zero-padded matrix P, and solving (65) MHcr=(Sr)Hcr for cr, where cr is a vector of coil sensitivity maps for all coils at spatial location r, and M  ( ( 1 1 … 1 0 0 … 0 … … … 0 0 … 0 )  ( 0 0 … 0 1 1 … 1 … … … 0 0 … 0 )   …   ( 0 0 … 0 0 0 … 0 … … … 1 1 … 1 ) ) .
摘要翻译：用于估计磁共振（MR）图像的线圈灵敏度映射的方法包括提供（61）线圈校准数据的2D图像的滑块的矩阵A，从奇异值计算（62）左奇异矩阵V∥ 计算（63）P = V || V | H，计算（64）作为零填充矩阵P的逆傅里叶变换的矩阵S，求解（65）MHcr = （Sr）Hcr，其中cr是空间位置r处所有线圈的线圈灵敏度图的向量，M（（1 1 ... 1 0 0 ... 0 ... ... ... 0 0 ... 0）0（0 0 ... 0 1 1 ... 1 ... ... ... 0 0 ... 0） 0 0 0 ... 0 ... ... ... 1 1 ... 1））。

26. 发明申请

US20130272061A1 SPIN CURRENT GENERATOR FOR STT-MRAM OR OTHER SPINTRONICS APPLICATIONS 有权
标题翻译：用于STT-MRAM或其他SPINTRONICS应用的旋转电流发生器
公开(公告)号：US20130272061A1
公开(公告)日：2013-10-17
申请号：US13911917
申请日：2013-06-06
申请人： Jun Liu , Gurtej Sandhu
发明人： Jun Liu , Gurtej Sandhu
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/1284 , G11C11/16 , H01F10/3218 , Y10S977/934
摘要： Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
摘要翻译：自旋电流发生器和采用自旋电流发生器的系统和方法。自旋电流发生器可以被配置为产生在一个方向上偏振的自旋电流，或者在两个方向上选择性地偏振的自旋电流。自旋电流发生器可用于自旋电子学应用中，其中期望自旋电流。

27. 发明申请

US20130259343A1 ALTERNATING DIRECTION OF MULTIPLIERS METHOD FOR PARALLEL MRI RECONSTRUCTION 有权
标题翻译：并行MRI重建方法的替代方法
公开(公告)号：US20130259343A1
公开(公告)日：2013-10-03
申请号：US13778446
申请日：2013-02-27
申请人： Jun Liu , Alban Lefebvre , Mariappan Nadar
发明人： Jun Liu , Alban Lefebvre , Mariappan Nadar
IPC分类号： G06T11/00
CPC分类号： G06T11/003 , G01R33/5611
摘要： A method for reconstructing parallel magnetic resonance images includes providing a set of acquired k-space MR image data y, and finding a target MR image x that minimizes ½∥Fv−y∥22+λ∥z∥1 where v=Sx and z=Wx where S is a diagonal matrix containing sensitivity maps of coil elements in an MR receiver array, F is an FFT matrix, W is a redundant Haar wavelet matrix, and λ≧0 is a regularization parameter, by updating x k + 1 = ( μ 1  I + μ 3  S H  S ) - 1  [ μ 1  W H  ( z k - b z k ) + μ 3  S H  ( v k - b v k ) ] ,  z k + 1 = soft  ( Wx k + 1  b z k , 1 μ 1 )   where soft  ( x , T ) = { x + T if   x ≤ - T , 0 if    x  ≤ T , x - T if   x ≥ T ,   and   v k + 1 = ( F H  F + μ 3  I ) - 1  [ F H  y + μ 3  ( Sx k + 1 + b v k ) ] , where k is an iteration counter, μ1 and μ3 are parameters of an augmented Lagrangian function, and bz and bv are dual variables of the augmented Lagrangian.
摘要翻译：重建并行磁共振图像的方法包括提供一组获取的k空间MR图像数据y，并找到最小化½|Fv-y‖22+λ‖z‖1的目标MR图像x，其中v = Sx和z = Wx其中S是包含MR接收器阵列中的线圈元件的灵敏度映射的对角矩阵，F是FFT矩阵，W是冗余Haar小波矩阵，并且λ> = 0是正则化参数，通过更新xk + 1 = （μ1 I +μ3 SH SH） - 1（zk-bzk）+ mu 3 SH（vk-bvk）]，zk + 1 =软（Wx k + 1，bzk，1 mu 1）其中软（x，T）= {x + T如果x x = = T，如果x<= T，x - 其中k是迭代，其中k是迭代，其中k是迭代，其中k是迭代，其中k是迭代计数器，mu1和mu3是增强的拉格朗日函数的参数，bz和bv是增强的拉格朗日的双重变量 ianㄧ。

28. 发明授权

US08537592B2 Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells 有权
公开(公告)号：US08537592B2
公开(公告)日：2013-09-17
申请号：US13088238
申请日：2011-04-15
申请人： Jun Liu
发明人： Jun Liu
IPC分类号： G11C11/00
CPC分类号： H01L45/1608 , G11C5/02 , G11C5/06 , G11C13/0004 , G11C2213/71 , H01L21/302 , H01L27/1021 , H01L27/2409 , H01L27/2463 , H01L27/2472 , H01L27/2481 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/165
摘要： An array of nonvolatile memory cells includes a plurality of vertically stacked tiers of nonvolatile memory cells. The tiers individually include a first plurality of horizontally oriented first electrode lines and a second plurality of horizontally oriented second electrode lines crossing relative to the first electrode lines. Individual of the memory cells include a crossing one of the first electrode lines and one of the second electrode lines and material there-between. Specifically, programmable material, a select device in series with the programmable material, and current conductive material in series between and with the programmable material and the select device are provided in series with such crossing ones of the first and second electrode lines. The material and devices may be oriented for predominant current flow in defined horizontal and vertical directions. Method and other implementations and aspects are disclosed.

29. 发明授权

US08523592B1 Electrical connector 有权
标题翻译：电连接器
公开(公告)号：US08523592B1
公开(公告)日：2013-09-03
申请号：US13477201
申请日：2012-05-22
申请人： Jun Liu , Yong Quan Wu
发明人： Jun Liu , Yong Quan Wu
IPC分类号： H01R13/62
CPC分类号： H01R13/506 , G06K13/0862 , H01R12/88 , H01R13/447 , H01R13/6581
摘要： An electrical connector includes a base, a cover and at least one elastic member. The base is disposed with at least one fastening portion and at least one pivoting portion. The cover covers on the base, disposed with at least one locking portion correspondingly locking the fastening portion, and capable of being opened or closed relative to the base about the pivoting portion. The at least one elastic member press against the base. When the locking portion unlocks the fastening portion, the elastic member pops up automatically due to elasticity, so that an operating space is formed below the cover to allow an operator to open the cover with fingers, which facilitates operation and does not cause injuries of the fingers, thereby ensuring safe use.
摘要翻译：电连接器包括底座，盖和至少一个弹性构件。底座设置有至少一个紧固部分和至少一个枢转部分。盖子覆盖在基座上，其中设置有至少一个锁定部分，相应地锁定紧固部分，并能够围绕枢转部分相对于基座打开或关闭。所述至少一个弹性构件压靠所述基座。当锁定部分解除紧固部分时，弹性部件由于弹性而自动弹起，从而在盖子的下方形成操作空间，以便操作者用手指打开盖子，这便于操作并且不会造成伤害手指，从而确保安全使用。

30. 发明授权

US08488365B2 Memory cells 有权
标题翻译：记忆单元
公开(公告)号：US08488365B2
公开(公告)日：2013-07-16
申请号：US13034031
申请日：2011-02-24
申请人： Jun Liu , Gurtej S. Sandhu
发明人： Jun Liu , Gurtej S. Sandhu
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/0073 , G11C2213/72 , G11C2213/73 , H01L27/2409 , H01L45/08 , H01L45/145 , H01L45/1608 , H01L45/165
摘要： Some embodiments include methods in which a memory cell is formed to have programmable material between first and second access lines, with the programmable material having two compositionally different regions. A concentration of ions and/or ion-vacancies may be altered in at least one of the regions to change a memory state of the memory cell and to simultaneously form a pn diode. Some embodiments include memory cells having programmable material with two compositionally different regions, and having ions and/or ion-vacancies diffusible into at least one of the regions. The memory cell has a memory state in which the first and second regions are of opposite conductivity type relative to one another.
摘要翻译：一些实施例包括其中存储单元形成为在第一和第二访问线之间具有可编程材料的方法，其中可编程材料具有两个组成上不同的区域。可以在至少一个区域中改变离子和/或离子空位的浓度以改变存储器单元的存储状态并同时形成pn二极管。一些实施例包括具有两个组成不同区域的可编程材料并且具有可扩散到至少一个区域中的离子和/或离子空位的存储器单元。存储单元具有其中第一和第二区域相对于彼此具有相反导电类型的存储状态。

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