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    • 25. 发明授权
    • Semiconductor device capable of detecting a light position
    • 能够检测光位置的半导体装置
    • US5600173A
    • 1997-02-04
    • US385203
    • 1995-02-08
    • Hiroshi Suzunaga
    • Hiroshi Suzunaga
    • H01L31/16H01L31/02H01L31/10H01L31/00
    • H01L31/02024
    • A semiconductor position sensitive detector has an epitaxial layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type. A first diffusion layer of the first conductivity type is formed in said epitaxial layer so as to isolate a rectangular portion of this epitaxial layer from the rest. A second diffusion layer of the first conductivity type is further formed in said rectangular portion of the epitaxial layer, in order to increase the resistance value of the epitaxial layer. In addition, due to the formation of the second diffusion layer, two p-n junctions having photoelectric transfer ability are formed in this device. So, a semiconductor position sensitive detector having excellent photoelectric characteristics can be obtained.
    • 半导体位置敏感检测器具有形成在第一导电类型的半导体衬底上的第二导电类型的外延层。 在所述外延层中形成第一导电类型的第一扩散层,以将该外延层的矩形部分与其余部分隔离。 为了增加外延层的电阻值,在外延层的所述矩形部分中进一步形成第一导电类型的第二扩散层。 此外,由于第二扩散层的形成,在该器件中形成具有光电转移能力的两个p-n结。 因此,可以获得具有优异的光电特性的半导体位置敏感检测器。